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    Method of coating microelectronic substrates
    2.
    发明授权
    Method of coating microelectronic substrates 失效
    涂布微电子基板的方法

    公开(公告)号：US07592035B2

    公开(公告)日：2009-09-22

    申请号：US11261299

    申请日：2005-10-28

    申请人： James P. DeYoung ,  James B. McClain ,  Stephen M. Gross ,  Doug Taylor ,  Mark I. Wagner ,  David Brainard

    发明人： James P. DeYoung ,  James B. McClain ,  Stephen M. Gross ,  Doug Taylor ,  Mark I. Wagner ,  David Brainard

    IPC分类号： B05D5/12

    CPC分类号： H01L21/283 ,  B05D1/18 ,  B05D2401/90 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/67028 ,  H01L28/65

    摘要： A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.

    摘要翻译： 涂覆基材的方法包括以下步骤：（a）在封闭容器中提供基材，所述基材具有表面部分; （b）用第一超临界流体至少部分地填充封闭的容器，使得所述第一超临界流体接触表面部分，第一超临界流体携带或包含涂层组分; 然后（c）向所述反应容器中加入单独的压缩气体气氛，使得在所述第一超临界流体和所述单独的压缩气体气氛之间形成边界，所述单独的压缩气体气氛的密度小于所述第一超临界流体; 然后（d）通过将所述单独的压缩气体气氛继续加入到所述容器中，使所述边界移动穿过所述表面部分并且将涂层组分的薄膜沉积在所述微电子衬底上，从而使所述第一超临界流体从所述容器移位。

    Methods for transferring supercritical fluids in microelectronic and other industrial processes
    6.
    发明授权
    Methods for transferring supercritical fluids in microelectronic and other industrial processes 失效
    在微电子和其他工业过程中转移超临界流体的方法

    公开(公告)号：US06905555B2

    公开(公告)日：2005-06-14

    申请号：US10448474

    申请日：2003-05-30

    申请人： James P. DeYoung ,  James B. McClain ,  Stephen M. Gross ,  Mark I. Wagner

    发明人： James P. DeYoung ,  James B. McClain ,  Stephen M. Gross ,  Mark I. Wagner

    IPC分类号： B05D1/18 ,  B08B7/00 ,  B81B3/00 ,  B81C1/00 ,  H01L21/00 ,  H01L21/306 ,  B08B3/00

    CPC分类号： B08B7/0021 ,  B05D1/18 ,  B05D2401/90 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/67017 ,  H01L21/67028 ,  Y10T137/0324

    摘要： A method of displacing a supercritical fluid from a pressure vessel (e.g., in a microelectronic manufacturing process), with the steps of: providing an enclosed pressure vessel containing a first supercritical fluid (said supercritical fluid preferably comprising carbon dioxide); adding a second fluid (typically also a supercritical fluid) to said vessel, with said second fluid being added at a pressure greater than the pressure of the first supercritical fluid, and with said second fluid having a density less than that of the first supercritical fluid; forming an interface between the first supercritical fluid and the second fluid; and displacing at least a portion of the first supercritical fluid from the vessel with the pressure of the second, preferably fluid while maintaining the interface therebetween.

    摘要翻译： 一种从压力容器（例如，在微电子制造过程中）置换超临界流体的方法，其步骤包括：提供包含第一超临界流体（所述超临界流体优选包含二氧化碳）的封闭压力容器; 向所述容器中加入第二流体（通常也是超临界流体），其中所述第二流体以大于第一超临界流体的压力的压力加入，并且所述第二流体的密度小于第一超临界流体的密度 ; 在所述第一超临界流体和所述第二流体之间形成界面; 并且使第二超临界流体的至少一部分与第二流体（优选流体）的压力从容器移位，同时保持其间的界面。

    Processes for cleaning and drying microelectronic structures using liquid or supercritical carbon dioxide
    10.
    发明授权
    Processes for cleaning and drying microelectronic structures using liquid or supercritical carbon dioxide 有权
    使用液体或超临界二氧化碳清洗和干燥微电子结构的方法

    公开(公告)号：US06562146B1

    公开(公告)日：2003-05-13

    申请号：US09932063

    申请日：2001-08-17

    申请人： James P. DeYoung ,  James B. McClain ,  Stephen M. Gross

    发明人： James P. DeYoung ,  James B. McClain ,  Stephen M. Gross

    IPC分类号： B08B300

    CPC分类号： C23G5/00 ,  B08B7/0021 ,  H01L21/02063 ,  Y10S134/902 ,  Y10S438/906

    摘要： A method of cleaning and removing water and entrained solutes during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing a partially fabricated integrated circuit, MEM's device, or optoelectronic device having water and entrained solutes on the substrate; (b) providing a densified (e.g., liquid or supercritical) carbon dioxide drying composition, the drying composition comprising carbon dioxide and a drying adjunct, the drying adjunct selected from the group consisting of cosolvents, surfactants, and combinations thereof; (c) immersing the surface portion in the densified carbon dioxide drying composition; and then (d) removing the drying composition from the surface portion. Process parameters are controlled so that the drying composition is maintained as a homogeneous composition during the immersing step, the removing step, or both the immersing and removing step, without substantial deposition of the drying/cleaning adjunct or entrained solutes on the substrate.

    摘要翻译： 一种在制造过程中从诸如抗蚀剂涂覆半导体衬底，MEM器件或光电器件的微电子器件清洗和除去水和夹带溶质的方法，包括以下步骤：（a）提供部分制造的集成电路， MEM的装置或在基板上具有水和夹带溶质的光电装置; （b）提供致密化（例如液体或超临界）二氧化碳干燥组合物，所述干燥组合物包含二氧化碳和干燥助剂，所述干燥助剂选自助溶剂，表面活性剂及其组合; （c）将表面部分浸入致密二氧化碳干燥组合物中; 然后（d）从表面部分除去干燥组合物。 控制工艺参数，使得干燥组合物在浸渍步骤，去除步骤或浸渍和除去步骤期间保持为均匀的组合物，而基本上不沉积干燥/清洁助剂或夹带的溶质。