公开(公告)号：US07138691B2

公开(公告)日：2006-11-21

申请号：US10707897

申请日：2004-01-22

申请人： Jay S. Burnham ,  John J. Ellis-Monaghan ,  James S. Nakos ,  James J. Quinlivan

发明人： Jay S. Burnham ,  John J. Ellis-Monaghan ,  James S. Nakos ,  James J. Quinlivan

IPC分类号： H01L29/76

CPC分类号： H01L21/823857

摘要： A semiconductor structure includes thin gate dielectrics that have been selectively nitrogen enriched. The amount of nitrogen introduced is sufficient to reduce or prevent gate leakage and dopant penetration, without appreciably degrading device performance. A lower concentration of nitrogen is introduced into pFET gate dielectrics than into nFET gate dielectrics. Nitridation may be accomplished selectively by various techniques, including rapid thermal nitridation (RTN), furnace nitridation, remote plasma nitridation (RPN), decoupled plasma nitridation (DPN), well implantation and/or polysilicon implantation.

摘要翻译： 半导体结构包括已经选择性地富氮的薄栅极电介质。 引入的氮气量足以减少或防止栅极泄漏和掺杂剂渗透，而不会明显降低器件性能。 较低浓度的氮被引入到pFET栅极电介质中，而不是nFET栅极电介质。 氮化可以通过各种技术选择性地完成，包括快速热氮化（RTN），炉氮化，远程等离子体氮化（RPN），去耦等离子体氮化（DPN），阱注入和/或多晶硅注入。

公开(公告)号：US08709887B2

公开(公告)日：2014-04-29

申请号：US11778238

申请日：2007-07-16

申请人： Jay S. Burnham ,  James S. Nakos ,  James J. Quinlivan ,  Bernie Roque, Jr. ,  Steven M. Shank ,  Beth A. Ward

发明人： Jay S. Burnham ,  James S. Nakos ,  James J. Quinlivan ,  Bernie Roque, Jr. ,  Steven M. Shank ,  Beth A. Ward

IPC分类号： H01L21/336

CPC分类号： H01L21/28202 ,  H01L21/28035 ,  H01L21/3144 ,  H01L29/518

摘要： A method of fabricating a gate dielectric layer. The method includes: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so formed may be used in the fabrication of MOSFETs.

摘要翻译： 一种制造栅极电介质层的方法。 该方法包括：提供衬底; 在所述基板的顶表面上形成二氧化硅层; 在还原气氛中进行等离子体氮化，将二氧化硅层转换成氮氧化硅层。 如此形成的电介质层可用于制造MOSFET。

公开(公告)号：US06706644B2

公开(公告)日：2004-03-16

申请号：US10206427

申请日：2002-07-26

申请人： Jay S. Burnham ,  James S. Nakos ,  James J. Quinlivan ,  Steven M. Shank ,  Deborah A. Tucker ,  Beth A. Ward

发明人： Jay S. Burnham ,  James S. Nakos ,  James J. Quinlivan ,  Steven M. Shank ,  Deborah A. Tucker ,  Beth A. Ward

IPC分类号： H01L2131

CPC分类号： H01L21/28202 ,  H01L21/28185 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/3185 ,  H01L29/513 ,  H01L29/518

摘要： Methods such as Remote Plasma Nitridation (RPN) are used to introduce nitrogen into a gate dielectric layer. However, these methods yield nitrided layers where the layers are not uniform, both in cross-sectional profile and in nitrogen profile. Subjecting the nitrided layer to an additional NO anneal process increases the uniformity of the nitrided layer.

摘要翻译： 使用诸如远程等离子体氮化（RPN）的方法将氮气引入栅极介电层。 然而，这些方法产生氮化层，其中层的横截面轮廓和氮分布都不均匀。 使氮化层进行额外的NO退火工艺增加了氮化层的均匀性。

公开(公告)号：US06909157B2

公开(公告)日：2005-06-21

申请号：US10652307

申请日：2003-09-02

申请人： Jay S. Burnham ,  James S. Nakos ,  James J. Quinlivan ,  Steven M. Shank ,  Deborah A. Tucker ,  Beth A. Ward

发明人： Jay S. Burnham ,  James S. Nakos ,  James J. Quinlivan ,  Steven M. Shank ,  Deborah A. Tucker ,  Beth A. Ward

IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L29/51 ,  H01L29/76

CPC分类号： H01L21/28202 ,  H01L21/28185 ,  H01L21/28211 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/3185 ,  H01L29/513 ,  H01L29/518

摘要： Methods such as Remote Plasma Nitridation (RPN) are used to introduce nitrogen into a gate dielectric layer. However, these methods yield nitrided layers where the layers are not uniform, both in cross-sectional profile and in nitrogen profile. Subjecting the nitrided layer to an additional NO anneal process increases the uniformity of the nitrided layer.

公开(公告)号：US07291568B2

公开(公告)日：2007-11-06

申请号：US10604905

申请日：2003-08-26

申请人： Jay S. Burnham ,  James S. Nakos ,  James J. Quinlivan ,  Bernie A. Roque, Jr. ,  Steven M. Shank ,  Beth A. Ward

发明人： Jay S. Burnham ,  James S. Nakos ,  James J. Quinlivan ,  Bernie A. Roque, Jr. ,  Steven M. Shank ,  Beth A. Ward

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28202 ,  H01L21/28035 ,  H01L21/3144 ,  H01L29/518

摘要： A method of fabricating a gate dielectric layer, including: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer. The dielectric layer so formed may be used in the fabrication of MOSFETs.

摘要翻译： 一种制造栅极电介质层的方法，包括：提供衬底; 在所述基板的顶表面上形成二氧化硅层; 在还原气氛中进行等离子体氮化，将二氧化硅层转换成氮氧化硅层。 如此形成的电介质层可用于制造MOSFET。

公开(公告)号：US07112481B2

公开(公告)日：2006-09-26

申请号：US11254929

申请日：2005-10-20

申请人： Sunfei Fang ,  Cyril Cabral, Jr. ,  Chester T. Dziobkowski ,  John J. Ellis-Monaghan ,  Christian Lavoie ,  Zhijiong Luo ,  James S. Nakos ,  An L. Steegen ,  Clement H. Wann

发明人： Sunfei Fang ,  Cyril Cabral, Jr. ,  Chester T. Dziobkowski ,  John J. Ellis-Monaghan ,  Christian Lavoie ,  Zhijiong Luo ,  James S. Nakos ,  An L. Steegen ,  Clement H. Wann

IPC分类号： H01L21/8238

CPC分类号： H01L21/28518 ,  H01L21/823814 ,  H01L21/823835

摘要： A method of fabricating a complementary metal oxide semiconductor (CMOS) device, wherein the method comprises forming a first well region in a semiconductor substrate for accommodation of a first type semiconductor device; forming a second well region in the semiconductor substrate for accommodation of a second type semiconductor device; shielding the first type semiconductor device with a mask; depositing a first metal layer over the second type semiconductor device; performing a first salicide formation on the second type semiconductor device; removing the mask; depositing a second metal layer over the first and second type semiconductor devices; and performing a second salicide formation on the first type semiconductor device. The method requires only one pattern level and it eliminates pattern overlay as it also simplifies the processes to form different silicide material over different devices.

摘要翻译： 一种制造互补金属氧化物半导体（CMOS）器件的方法，其中所述方法包括在用于容纳第一类型半导体器件的半导体衬底中形成第一阱区; 在所述半导体衬底中形成用于容纳第二类型半导体器件的第二阱区; 用掩模屏蔽第一类型半导体器件; 在所述第二类型半导体器件上沉积第一金属层; 在所述第二类型半导体器件上执行第一自对准硅化物形成; 去除面膜; 在所述第一和第二类型半导体器件上沉积第二金属层; 以及在所述第一类型半导体器件上执行第二自对准硅化物形成。 该方法仅需要一个图案级别，并且消除图案覆盖，因为它也简化了在不同设备上形成不同硅化物材料的工艺。

公开(公告)号：US07067368B1

公开(公告)日：2006-06-27

申请号：US11254934

申请日：2005-10-20

申请人： Sunfei Fang ,  Cyril Cabral, Jr. ,  Chester T. Dziobkowski ,  John J. Ellis-Monaghan ,  Christian Lavoie ,  Zhijiong Luo ,  James S. Nakos ,  An L. Steegen ,  Clement H. Wann

发明人： Sunfei Fang ,  Cyril Cabral, Jr. ,  Chester T. Dziobkowski ,  John J. Ellis-Monaghan ,  Christian Lavoie ,  Zhijiong Luo ,  James S. Nakos ,  An L. Steegen ,  Clement H. Wann

IPC分类号： H01L21/8238

CPC分类号： H01L21/28518 ,  H01L21/823814 ,  H01L21/823835

摘要： A method of fabricating a complementary metal oxide semiconductor (CMOS) device, wherein the method comprises forming a first well region in a semiconductor substrate for accommodation of a first type semiconductor device; forming a second well region in the semiconductor substrate for accommodation of a second type semiconductor device; shielding the first type semiconductor device with a mask; depositing a first metal layer over the second type semiconductor device; performing a first salicide formation on the second type semiconductor device; removing the mask; depositing a second metal layer over the first and second type semiconductor devices; and performing a second salicide formation on the first type semiconductor device. The method requires only one pattern level and it eliminates pattern overlay as it also simplifies the processes to form different silicide material over different devices.

公开(公告)号：US07064025B1

公开(公告)日：2006-06-20

申请号：US10904884

申请日：2004-12-02

申请人： Sunfei Fang ,  Cyril Cabral, Jr. ,  Chester T. Dziobkowski ,  John J. Ellis-Monaghan ,  Christian Lavoie ,  Zhijiong Luo ,  James S. Nakos ,  An L. Steegen ,  Clement H. Wann

发明人： Sunfei Fang ,  Cyril Cabral, Jr. ,  Chester T. Dziobkowski ,  John J. Ellis-Monaghan ,  Christian Lavoie ,  Zhijiong Luo ,  James S. Nakos ,  An L. Steegen ,  Clement H. Wann

IPC分类号： H01L21/8238

CPC分类号： H01L21/28518 ,  H01L21/823814 ,  H01L21/823835

摘要： A method of fabricating a complementary metal oxide semiconductor (CMOS) device, wherein the method comprises forming a first well region in a semiconductor substrate for accommodation of a first type semiconductor device; forming a second well region in the semiconductor substrate for accommodation of a second type semiconductor device; shielding the first type semiconductor device with a mask; depositing a first metal layer over the second type semiconductor device; performing a first salicide formation on the second type semiconductor device; removing the mask; depositing a second metal layer over the first and second type semiconductor devices; and performing a second salicide formation on the first type semiconductor device. The method requires only one pattern level and it eliminates pattern overlay as it also simplifies the processes to form different silicide material over different devices.

公开(公告)号：US06967167B2

公开(公告)日：2005-11-22

申请号：US10605435

申请日：2003-09-30

申请人： Peter J. Geiss ,  Alvin J. Joseph ,  Xuefeng Liu ,  James S. Nakos ,  James J. Quinlivan

发明人： Peter J. Geiss ,  Alvin J. Joseph ,  Xuefeng Liu ,  James S. Nakos ,  James J. Quinlivan

IPC分类号： H01L21/302 ,  H01L21/311 ,  H01L21/331 ,  H01L21/461

CPC分类号： H01L29/66242 ,  H01L21/31116

摘要： A method for removing silicon dioxide residuals is disclosed. The method includes reacting a portion of a silicon dioxide layer (i.e., oxide) to form a reaction product layer, removing the reaction product layer and annealing in an environment to remove oxide residuals. The method finds application in a variety of semiconductor fabrication processes including, for example, fabrication of a vertical HBT or silicon-to-silicon interface without an oxide interface.

摘要翻译： 公开了一种去除二氧化硅残留物的方法。 该方法包括使一部分二氧化硅层（即氧化物）反应以形成反应产物层，除去反应产物层并在环境中退火以除去氧化物残余物。 该方法应用于各种半导体制造工艺中，包括例如制造垂直HBT或无硅氧化物界面的硅 - 硅界面。

公开(公告)号：US06780720B2

公开(公告)日：2004-08-24

申请号：US10187572

申请日：2002-07-01

申请人： Jay S. Burnham ,  Anthony I. Chou ,  Toshiharu Furukawa ,  Margaret L. Gibson ,  James S. Nakos ,  Steven M. Shank

发明人： Jay S. Burnham ,  Anthony I. Chou ,  Toshiharu Furukawa ,  Margaret L. Gibson ,  James S. Nakos ,  Steven M. Shank

IPC分类号： H01L21336

CPC分类号： H01L21/28202 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/3144 ,  H01L21/324 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66757

摘要： A method of fabricating a gate dielectric layer. The method comprises: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; exposing the silicon dioxide layer to a plasma nitridation to convert the silicon dioxide layer into a silicon oxynitride layer; and performing a spiked rapid thermal anneal of the silicon oxynitride layer.

摘要翻译： 一种制造栅极电介质层的方法。 该方法包括：提供衬底; 在所述基板的顶表面上形成二氧化硅层; 将二氧化硅层暴露于等离子体氮化，以将二氧化硅层转化为氮氧化硅层; 并进行氮氧化硅层的加热快速热退火。