公开(公告)号：US06776873B1

公开(公告)日：2004-08-17

申请号：US10075967

申请日：2002-02-14

申请人： Jennifer Y Sun ,  Shun Jackson Wu ,  Senh Thach ,  Ananda H Kumar ,  Robert W Wu ,  Hong Wang ,  Yixing Lin ,  Clifford C Stow

发明人： Jennifer Y Sun ,  Shun Jackson Wu ,  Senh Thach ,  Ananda H Kumar ,  Robert W Wu ,  Hong Wang ,  Yixing Lin ,  Clifford C Stow

IPC分类号： C23F100

CPC分类号： C23C28/00 ,  C23C16/4404

摘要： To further enhance the chamber material performance of anodized aluminum alloy materials against fluorine and oxygen plasma attack, a ceramic-based surface coating, high purity yttrium oxide coating, is provided on the anodized aluminum alloy parts.

摘要翻译： 为了进一步提高阳极氧化铝合金材料对氟和氧等离子体侵蚀的室内材料性能，在阳极氧化铝合金部件上提供陶瓷基表面涂层，高纯度氧化钇涂层。

公开(公告)号：US20080213496A1

公开(公告)日：2008-09-04

申请号：US11890221

申请日：2007-08-02

申请人： Jennifer Y. Sun ,  Shun Jackson Wu ,  Senh Thach ,  Ananda Kumar ,  Robert W. Wu ,  Hong Wang ,  Yixing Lin ,  Clifford C. Stow ,  Jim Dempster ,  Li Xu ,  Kenneth S. Collins ,  Ren-Guan Duan ,  Thomas Graves ,  Xiaoming He ,  Jie Yuan

发明人： Jennifer Y. Sun ,  Shun Jackson Wu ,  Senh Thach ,  Ananda Kumar ,  Robert W. Wu ,  Hong Wang ,  Yixing Lin ,  Clifford C. Stow ,  Jim Dempster ,  Li Xu ,  Kenneth S. Collins ,  Ren-Guan Duan ,  Thomas Graves ,  Xiaoming He ,  Jie Yuan

IPC分类号： C23C4/10 ,  C23C14/34

CPC分类号： C23C28/042 ,  C23C4/11 ,  C23C4/18 ,  C23C16/4404

摘要： Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas. The specialty ceramic materials contain at least one yttrium oxide-comprising solid solution. Some embodiments of the specialty ceramic materials have been modified to provide a resistivity which reduces the possibility of arcing within a semiconductor processing chamber.

摘要翻译： 将特种陶瓷材料应用于半导体加工设备的方法，其中特种陶瓷材料耐卤素等离子体。 特种陶瓷材料含有至少一种含氧化钇的固溶体。 已经修改了特种陶瓷材料的一些实施例以提供降低半导体处理室内的电弧的可能性的电阻率。

公开(公告)号：US07048814B2

公开(公告)日：2006-05-23

申请号：US10071869

申请日：2002-02-08

申请人： Yixing Lin ,  Brian T. West ,  Hong Wang ,  Shun Jackson Wu ,  Jennifer Y Sun ,  Clifford C. Stow ,  Senh Thach

发明人： Yixing Lin ,  Brian T. West ,  Hong Wang ,  Shun Jackson Wu ,  Jennifer Y Sun ,  Clifford C. Stow ,  Senh Thach

IPC分类号： C25D3/04

CPC分类号： C25D11/16 ,  C25D11/04 ,  C25D11/045

摘要： We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film can be controlled by maintaining the content of mobile impurities within a specific range and controlling the particulate size and distribution of the mobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330° C.; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.

公开(公告)号：US07033447B2

公开(公告)日：2006-04-25

申请号：US10137782

申请日：2002-05-03

申请人： Yixing Lin ,  Brian T West ,  Shun Jackson Wu ,  Clifford C Stow ,  Senh Thach ,  Hong Wang ,  Jennifer Y Sun

发明人： Yixing Lin ,  Brian T West ,  Shun Jackson Wu ,  Clifford C Stow ,  Senh Thach ,  Hong Wang ,  Jennifer Y Sun

IPC分类号： C22C21/06

CPC分类号： C25D11/04 ,  C22C21/06 ,  C25D11/045 ,  C25D11/06 ,  C25D11/16

摘要： We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film, can be controlled by maintaining the content of mobile and nonmobile impurities within a specific range and controlling the particulate size and distribution of the mobile and nonmobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330° C.; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.

摘要翻译： 我们已经发现，通过将移动和非移动杂质的含量保持在内，在铝合金制品的表面上形成颗粒夹杂物，其中夹杂物干扰从合金表面到上覆的氧化铝保护膜的平滑过渡 特定范围并控制流动和非流动杂质及其化合物的颗粒尺寸和分布; 通过在低于约330℃的温度下对铝合金进行热处理; 并通过使用特定的电解工艺制备氧化铝保护膜。 当考虑这些因素时，获得改进的氧化铝保护膜。

公开(公告)号：US06713188B2

公开(公告)日：2004-03-30

申请号：US10352631

申请日：2003-01-27

申请人： Shun Wu ,  Clifford C. Stow ,  Hong Wang ,  Yixing Lin ,  Brian West

发明人： Shun Wu ,  Clifford C. Stow ,  Hong Wang ,  Yixing Lin ,  Brian West

IPC分类号： B32B1504

CPC分类号： H01J37/32467 ,  C23C16/4401 ,  C25D11/04 ,  H01J37/32477 ,  H01J37/32559 ,  Y10T428/1259 ,  Y10T428/12611 ,  Y10T428/249961 ,  Y10T428/249987 ,  Y10T428/25 ,  Y10T428/256 ,  Y10T428/258 ,  Y10T428/26 ,  Y10T428/263

摘要： We have discovered that the formation of particulate inclusions at the surface and the interior of an aluminum alloy article interferes with the performance of the article when a surface of the article is protected by an anodized coating. We have also discovered that the formation of such particulate inclusions can be controlled to a large extent by controlling the concentration of particular impurities present in the alloy used to fabricate the aluminum alloy article.

摘要翻译： 我们已经发现，当铝合金制品的表面和内部形成颗粒状夹杂物时，通过阳极氧化涂层保护制品的表面时会干扰制品的性能。 我们还发现，通过控制用于制造铝合金制品的合金中存在的特定杂质的浓度，可以在很大程度上控制这种颗粒夹杂物的形成。

公开(公告)号：US06899798B2

公开(公告)日：2005-05-31

申请号：US10027683

申请日：2001-12-21

申请人： Edwin Charles Weldon ,  Yongxiang He ,  Hong Wang ,  Clifford C. Stow

发明人： Edwin Charles Weldon ,  Yongxiang He ,  Hong Wang ,  Clifford C. Stow

IPC分类号： B23K26/40 ,  C04B41/00 ,  C04B41/51 ,  C04B41/52 ,  C04B41/53 ,  C04B41/80 ,  C04B41/88 ,  C04B41/89 ,  C04B41/91 ,  C23C14/56 ,  H01L21/203 ,  H05K3/00 ,  H05K3/38 ,  C23C14/35 ,  C23C16/00

CPC分类号： C04B41/009 ,  B23K26/40 ,  B23K2103/52 ,  C04B41/0072 ,  C04B41/51 ,  C04B41/5155 ,  C04B41/52 ,  C04B41/5353 ,  C04B41/80 ,  C04B41/88 ,  C04B41/89 ,  C04B41/91 ,  C23C14/564 ,  C04B41/53 ,  C04B41/5133 ,  C04B35/10 ,  C04B35/00

摘要： Disclosed herein is a method of roughening a ceramic surface by forming mechanical interlocks in the ceramic surface by a chemical etching process, a thermal etching process, or a laser micromachining process. Also disclosed herein are components for use in semiconductor processing chambers (in particular, a deposition ring for use in a PVD chamber) which have at least one ceramic surface having mechanical interlocks formed therein by chemical etching, thermal etching, or laser micromachining. Ceramic surfaces which have been roughened according to the chemical etching, thermal etching, or laser micromachining process of the invention are less brittle and damaged than ceramic surfaces which are roughened using conventional grit blasting techniques. The method of the invention results in a roughened ceramic surface which provides good adherence to an overlying sacrificial layer (such as aluminum).

摘要翻译： 本文公开了通过在化学蚀刻工艺，热蚀刻工艺或激光微加工工艺中在陶瓷表面中形成机械互锁来使陶瓷表面粗糙化的方法。 本文还公开了用于半导体处理室（特别是用于PVD室中的沉积环）的组件，其具有通过化学蚀刻，热蚀刻或激光微加工在其中形成有机械互锁的至少一个陶瓷表面。 根据本发明的化学蚀刻，热蚀刻或激光微加工方法已经被粗糙化的陶瓷表面比使用常规喷砂技术粗糙化的陶瓷表面不那么脆弱和损坏。 本发明的方法产生了对上覆的牺牲层（例如铝）具有良好粘合性的粗糙陶瓷表面。

公开(公告)号：US06902628B2

公开(公告)日：2005-06-07

申请号：US10304535

申请日：2002-11-25

申请人： Hong Wang ,  Yongxiang He ,  Clifford C Stow

发明人： Hong Wang ,  Yongxiang He ,  Clifford C Stow

IPC分类号： B24C1/00 ,  C22B7/00 ,  C23C14/56 ,  C23F1/36 ,  C23G1/12 ,  B08B3/04

CPC分类号： C23G1/125 ,  B24C1/06 ,  C22B7/007 ,  C23C14/564 ,  C23F1/36 ,  Y02P10/234 ,  Y10S134/902

摘要： In a method of cleaning and refurbishing a process chamber component having a metal coating having a surface thereon, the surface of the metal coating is immersed in an acidic solution to remove at least a portion of the process deposits from the surface. Thereafter, the surface of the metal coating is immersed in a basic solution to remove substantially all the metal coating. The component may optionally be bead blasting to roughen a surface of the component, and the metal coating may be re-formed.

摘要翻译： 在清洁和翻新具有其上具有表面的金属涂层的处理室部件的方法中，将金属涂层的表面浸入酸性溶液中以从表面除去至少一部分工艺沉积物。 此后，将金属涂层的表面浸入碱性溶液中以除去基本上所有的金属涂层。 组分可以任选地是珠粒喷射以使组分的表面粗糙化，并且可以重新形成金属涂层。

公开(公告)号：US06565984B1

公开(公告)日：2003-05-20

申请号：US10161192

申请日：2002-05-28

申请人： Shun Wu ,  Clifford Stow ,  Hong Wang ,  Yixing Lin

发明人： Shun Wu ,  Clifford Stow ,  Hong Wang ,  Yixing Lin

IPC分类号： B32B1504

CPC分类号： H01J37/32467 ,  C23C16/4401 ,  C25D11/04 ,  H01J37/32477 ,  H01J37/32559 ,  Y10T428/1259 ,  Y10T428/12611 ,  Y10T428/249961 ,  Y10T428/249987 ,  Y10T428/25 ,  Y10T428/256 ,  Y10T428/258 ,  Y10T428/26 ,  Y10T428/263

摘要： We have discovered that the formation of particulate inclusions at the surface and the interior of an aluminum alloy article interferes with the performance of the article when a surface of the article is protected by an anodized coating. We have also discovered that the formation of such particulate inclusions can be controlled to a large extent by controlling the concentration of particular impurities present in the alloy used to fabricate the aluminum alloy article.

摘要翻译： 我们已经发现，当铝合金制品的表面和内部形成颗粒状夹杂物时，通过阳极氧化涂层保护制品的表面时会干扰制品的性能。 我们还发现，通过控制用于制造铝合金制品的合金中存在的特定杂质的浓度，可以在很大程度上控制这种颗粒夹杂物的形成。

公开(公告)号：US10420166B2

公开(公告)日：2019-09-17

申请号：US13542247

申请日：2012-07-05

申请人： Lixiang Xu ,  Hong Wang ,  Huarui Liang

发明人： Lixiang Xu ,  Hong Wang ,  Huarui Liang

IPC分类号： H04W76/30 ,  H04W8/08 ,  H04W36/00

摘要： Methods for avoiding handover failure are provided. The method includes determining, by a source Base Station (BS), to perform a handover of a User Equipment (UE); determining, by the source BS, whether a target BS connects with a user plane node serving the UE at the source BS; and releasing resources, when the target BS does not connect with the user plane node serving the UE at the source BS.

公开(公告)号：US10089263B2

公开(公告)日：2018-10-02

申请号：US15118501

申请日：2014-03-24

申请人： INTEL CORPORATION ,  Thiam Wah Loh ,  Gautham N. Chinya ,  Per Hammarlund ,  Reza Fortas ,  Hong Wang ,  Huajin Sun

发明人： Thiam Wah Loh ,  Gautham N. Chinya ,  Per Hammarlund ,  Reza Fortas ,  Hong Wang ,  Huajin Sun

IPC分类号： G06F13/24

摘要： A processor is disclosed and includes at least one core including a first core, and interrupt delay logic. The interrupt delay logic is to receive a first interrupt at a first time and delay the first interrupt from being processed by a first time delay that begins at the first time, unless the first interrupt is pending at a second time when a second interrupt is processed by the first core. If the first interrupt is pending at the second time, the interrupt delay logic is to indicate to the first core to begin to process the first interrupt prior to completion of the first time delay. Other embodiments are disclosed and claimed.