公开(公告)号：US20080213496A1

公开(公告)日：2008-09-04

申请号：US11890221

申请日：2007-08-02

申请人： Jennifer Y. Sun ,  Shun Jackson Wu ,  Senh Thach ,  Ananda Kumar ,  Robert W. Wu ,  Hong Wang ,  Yixing Lin ,  Clifford C. Stow ,  Jim Dempster ,  Li Xu ,  Kenneth S. Collins ,  Ren-Guan Duan ,  Thomas Graves ,  Xiaoming He ,  Jie Yuan

发明人： Jennifer Y. Sun ,  Shun Jackson Wu ,  Senh Thach ,  Ananda Kumar ,  Robert W. Wu ,  Hong Wang ,  Yixing Lin ,  Clifford C. Stow ,  Jim Dempster ,  Li Xu ,  Kenneth S. Collins ,  Ren-Guan Duan ,  Thomas Graves ,  Xiaoming He ,  Jie Yuan

IPC分类号： C23C4/10 ,  C23C14/34

CPC分类号： C23C28/042 ,  C23C4/11 ,  C23C4/18 ,  C23C16/4404

摘要： Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas. The specialty ceramic materials contain at least one yttrium oxide-comprising solid solution. Some embodiments of the specialty ceramic materials have been modified to provide a resistivity which reduces the possibility of arcing within a semiconductor processing chamber.

摘要翻译： 将特种陶瓷材料应用于半导体加工设备的方法，其中特种陶瓷材料耐卤素等离子体。 特种陶瓷材料含有至少一种含氧化钇的固溶体。 已经修改了特种陶瓷材料的一些实施例以提供降低半导体处理室内的电弧的可能性的电阻率。

公开(公告)号：US06776873B1

公开(公告)日：2004-08-17

申请号：US10075967

申请日：2002-02-14

申请人： Jennifer Y Sun ,  Shun Jackson Wu ,  Senh Thach ,  Ananda H Kumar ,  Robert W Wu ,  Hong Wang ,  Yixing Lin ,  Clifford C Stow

发明人： Jennifer Y Sun ,  Shun Jackson Wu ,  Senh Thach ,  Ananda H Kumar ,  Robert W Wu ,  Hong Wang ,  Yixing Lin ,  Clifford C Stow

IPC分类号： C23F100

CPC分类号： C23C28/00 ,  C23C16/4404

摘要： To further enhance the chamber material performance of anodized aluminum alloy materials against fluorine and oxygen plasma attack, a ceramic-based surface coating, high purity yttrium oxide coating, is provided on the anodized aluminum alloy parts.

摘要翻译： 为了进一步提高阳极氧化铝合金材料对氟和氧等离子体侵蚀的室内材料性能，在阳极氧化铝合金部件上提供陶瓷基表面涂层，高纯度氧化钇涂层。

公开(公告)号：US07048814B2

公开(公告)日：2006-05-23

申请号：US10071869

申请日：2002-02-08

申请人： Yixing Lin ,  Brian T. West ,  Hong Wang ,  Shun Jackson Wu ,  Jennifer Y Sun ,  Clifford C. Stow ,  Senh Thach

发明人： Yixing Lin ,  Brian T. West ,  Hong Wang ,  Shun Jackson Wu ,  Jennifer Y Sun ,  Clifford C. Stow ,  Senh Thach

IPC分类号： C25D3/04

CPC分类号： C25D11/16 ,  C25D11/04 ,  C25D11/045

摘要： We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film can be controlled by maintaining the content of mobile impurities within a specific range and controlling the particulate size and distribution of the mobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330° C.; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.

公开(公告)号：US07033447B2

公开(公告)日：2006-04-25

申请号：US10137782

申请日：2002-05-03

申请人： Yixing Lin ,  Brian T West ,  Shun Jackson Wu ,  Clifford C Stow ,  Senh Thach ,  Hong Wang ,  Jennifer Y Sun

发明人： Yixing Lin ,  Brian T West ,  Shun Jackson Wu ,  Clifford C Stow ,  Senh Thach ,  Hong Wang ,  Jennifer Y Sun

IPC分类号： C22C21/06

CPC分类号： C25D11/04 ,  C22C21/06 ,  C25D11/045 ,  C25D11/06 ,  C25D11/16

摘要： We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film, can be controlled by maintaining the content of mobile and nonmobile impurities within a specific range and controlling the particulate size and distribution of the mobile and nonmobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330° C.; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.

摘要翻译： 我们已经发现，通过将移动和非移动杂质的含量保持在内，在铝合金制品的表面上形成颗粒夹杂物，其中夹杂物干扰从合金表面到上覆的氧化铝保护膜的平滑过渡 特定范围并控制流动和非流动杂质及其化合物的颗粒尺寸和分布; 通过在低于约330℃的温度下对铝合金进行热处理; 并通过使用特定的电解工艺制备氧化铝保护膜。 当考虑这些因素时，获得改进的氧化铝保护膜。

公开(公告)号：US07055732B2

公开(公告)日：2006-06-06

申请号：US10652663

申请日：2003-08-28

申请人： Senh Thach ,  Jennifer Y. Sun ,  Shun Jackson Wu ,  Yixing Lin ,  Clifford C. Stow

发明人： Senh Thach ,  Jennifer Y. Sun ,  Shun Jackson Wu ,  Yixing Lin ,  Clifford C. Stow

IPC分类号： B23K20/12 ,  B23K37/00 ,  B23K31/02

CPC分类号： B23K20/24 ,  B23K20/12 ,  B23K20/129 ,  B23K20/2336 ,  B23K2101/40 ,  B23K2103/10 ,  Y10T428/12736

摘要： We have discovered a method of producing a complex-shaped aluminum alloy article, where welding has been employed to form the article, where an anodized aluminum coating is produced over a surface of the article including the weld joint, and where the anodized aluminum coating is uniform, providing improved performance over that previously known in the art for welded articles exposed to a corrosive plasma environment.

摘要翻译： 我们已经发现了一种生产复合形状的铝合金制品的方法，其中已经使用焊接来形成制品，其中在包括焊接接头的制品的表面上产生阳极氧化的铝涂层，并且其中阳极氧化的铝涂层 与现有技术中已知的用于暴露于腐蚀性等离子体环境的焊接制品相比提供了更好的性能。

公开(公告)号：US06659331B2

公开(公告)日：2003-12-09

申请号：US10086003

申请日：2002-02-26

申请人： Senh Thach ,  Jennifer Y. Sun ,  Shun Jackson Wu ,  Yixing Lin ,  Clifford C. Stow

发明人： Senh Thach ,  Jennifer Y. Sun ,  Shun Jackson Wu ,  Yixing Lin ,  Clifford C. Stow

IPC分类号： B23K3102

CPC分类号： B23K20/24 ,  B23K20/12 ,  B23K20/129 ,  B23K20/2336 ,  B23K2101/40 ,  B23K2103/10 ,  Y10T428/12736

摘要： We have discovered a method of producing a complex-shaped aluminum alloy article, where welding has been employed to form the article, where an anodized aluminum coating is produced over a surface of the article including the weld joint, and where the anodized aluminum coating is uniform, providing improved performance over that previously known in the art for welded articles exposed to a corrosive plasma environment.

摘要翻译： 我们已经发现了一种生产复合形状的铝合金制品的方法，其中已经使用焊接来形成制品，其中在包括焊接接头的制品的表面上产生阳极氧化的铝涂层，并且其中阳极氧化的铝涂层是 与现有技术中已知的用于暴露于腐蚀性等离子体环境的焊接制品相比提供了更好的性能。

公开(公告)号：US06713188B2

公开(公告)日：2004-03-30

申请号：US10352631

申请日：2003-01-27

申请人： Shun Wu ,  Clifford C. Stow ,  Hong Wang ,  Yixing Lin ,  Brian West

发明人： Shun Wu ,  Clifford C. Stow ,  Hong Wang ,  Yixing Lin ,  Brian West

IPC分类号： B32B1504

CPC分类号： H01J37/32467 ,  C23C16/4401 ,  C25D11/04 ,  H01J37/32477 ,  H01J37/32559 ,  Y10T428/1259 ,  Y10T428/12611 ,  Y10T428/249961 ,  Y10T428/249987 ,  Y10T428/25 ,  Y10T428/256 ,  Y10T428/258 ,  Y10T428/26 ,  Y10T428/263

摘要： We have discovered that the formation of particulate inclusions at the surface and the interior of an aluminum alloy article interferes with the performance of the article when a surface of the article is protected by an anodized coating. We have also discovered that the formation of such particulate inclusions can be controlled to a large extent by controlling the concentration of particular impurities present in the alloy used to fabricate the aluminum alloy article.

摘要翻译： 我们已经发现，当铝合金制品的表面和内部形成颗粒状夹杂物时，通过阳极氧化涂层保护制品的表面时会干扰制品的性能。 我们还发现，通过控制用于制造铝合金制品的合金中存在的特定杂质的浓度，可以在很大程度上控制这种颗粒夹杂物的形成。

公开(公告)号：US06565984B1

公开(公告)日：2003-05-20

申请号：US10161192

申请日：2002-05-28

申请人： Shun Wu ,  Clifford Stow ,  Hong Wang ,  Yixing Lin

发明人： Shun Wu ,  Clifford Stow ,  Hong Wang ,  Yixing Lin

IPC分类号： B32B1504

CPC分类号： H01J37/32467 ,  C23C16/4401 ,  C25D11/04 ,  H01J37/32477 ,  H01J37/32559 ,  Y10T428/1259 ,  Y10T428/12611 ,  Y10T428/249961 ,  Y10T428/249987 ,  Y10T428/25 ,  Y10T428/256 ,  Y10T428/258 ,  Y10T428/26 ,  Y10T428/263

摘要： We have discovered that the formation of particulate inclusions at the surface and the interior of an aluminum alloy article interferes with the performance of the article when a surface of the article is protected by an anodized coating. We have also discovered that the formation of such particulate inclusions can be controlled to a large extent by controlling the concentration of particular impurities present in the alloy used to fabricate the aluminum alloy article.

摘要翻译： 我们已经发现，当铝合金制品的表面和内部形成颗粒状夹杂物时，通过阳极氧化涂层保护制品的表面时会干扰制品的性能。 我们还发现，通过控制用于制造铝合金制品的合金中存在的特定杂质的浓度，可以在很大程度上控制这种颗粒夹杂物的形成。

公开(公告)号：US20050238807A1

公开(公告)日：2005-10-27

申请号：US10833975

申请日：2004-04-27

申请人： Yixing Lin ,  Dajiang Xu ,  Robert Haney ,  Clifford Stow

发明人： Yixing Lin ,  Dajiang Xu ,  Robert Haney ,  Clifford Stow

IPC分类号： H05H1/46 ,  B05D3/02 ,  B08B3/08 ,  B08B3/12 ,  B08B7/00 ,  B08B7/02 ,  C23C14/56 ,  H01J9/38 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H01J37/32431 ,  B08B3/08 ,  B08B3/12 ,  B08B7/0035 ,  C23C14/564 ,  H01J9/38

摘要： A component of a process chamber is cleaned and refurbished. The component has a structure with an overlying coating having of a first layer. To refurbish the component, the first layer is removed to form an exposed surface on the structure. During or after the removal of the coating, the exposed surface is cleaned with a cleaning fluid, which deposits cleaning residue on the exposed surface. The exposed surface is heated in a substantially non-oxidizing atmosphere to a temperature that is sufficiently high to vaporize the cleaning residue from the surface, thereby forming a cleaned surface. A second layer is formed over the cleaned surface.

摘要翻译： 处理室的组件被清洁和翻新。 该组件具有具有第一层的覆盖涂层的结构。 为了翻新部件，去除第一层以在结构上形成暴露的表面。 在去除涂层期间或之后，暴露的表面用清洁液清洁，清洁液将清洁残留物沉积在暴露的表面上。 将暴露的表面在基本上非氧化性气氛中加热到足够高的温度，以使表面上的清洁残余物蒸发，从而形成清洁的表面。 在清洁的表面上形成第二层。

公开(公告)号：US08021743B2

公开(公告)日：2011-09-20

申请号：US12546588

申请日：2009-08-24

申请人： Yixing Lin ,  Daijiang Xu ,  Clifford Stow

发明人： Yixing Lin ,  Daijiang Xu ,  Clifford Stow

IPC分类号： B32B5/32 ,  B32B5/18 ,  B32B3/02 ,  C23C14/00

CPC分类号： C23C30/00 ,  C23C4/02 ,  C23C4/131 ,  C23C28/021 ,  C23C28/44 ,  Y10T428/12736 ,  Y10T428/12743 ,  Y10T428/1275 ,  Y10T428/12757 ,  Y10T428/12764 ,  Y10T428/24355 ,  Y10T428/24942 ,  Y10T428/24992 ,  Y10T428/249981 ,  Y10T428/249987 ,  Y10T428/31504

摘要： A substrate processing chamber component is capable of being exposed to an energized gas in a process chamber. The component has an underlying structure and first and second coating layers, the first coating layer comprising a first material having a first thermal expansion coefficient and a first surface having an average surface roughness of less than about 25 micrometers. The second coating layer is over the first surface of the first coating layer, the second coating layer comprising a second material having a second thermal expansion coefficient that differs by less than 5% from the first thermal expansion coefficient of the first material and a second surface having an average surface roughness of at least about 50 micrometers.

摘要翻译： 基板处理室部件能够暴露于处理室中的通电气体。 该组件具有下面的结构和第一和第二涂层，第一涂层包括具有第一热膨胀系数的第一材料和具有小于约25微米的平均表面粗糙度的第一表面。 第二涂层在第一涂层的第一表面之上，第二涂层包括具有第二热膨胀系数的第二材料，第二热膨胀系数与第一材料的第一热膨胀系数相差小于5％，第二表面 具有至少约50微米的平均表面粗糙度。