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    Micromechanical sensor element
    3.
    发明授权
    Micromechanical sensor element 有权
    微机械传感器元件

    公开(公告)号：US07918136B2

    公开(公告)日：2011-04-05

    申请号：US12158425

    申请日：2006-11-21

    申请人： Joerg Muchow ,  Hubert Benzel ,  Simon Armbruster ,  Christoph Schelling

    发明人： Joerg Muchow ,  Hubert Benzel ,  Simon Armbruster ,  Christoph Schelling

    IPC分类号： G01L9/06

    CPC分类号： G01L9/0054 ,  G01L9/0055

    摘要： A micromechanical sensor element (1) is provided, which has a sealed diaphragm (2) affixed in a frame (3), exhibits high sensitivity at high overload resistance and has a small size, and which allows a piezoresistive measured-value acquisition. To this end, at least one carrier element (4), which is connected to the frame (3) via at least one connection link (5), is formed in the region of the diaphragm (2). Furthermore, piezoresistors (6) for detecting a deformation are situated in the region of the connection link (5).

    摘要翻译： 提供了一种微机械传感器元件（1），其具有固定在框架（3）中的密封隔膜（2），在高过载电阻下表现出高灵敏度并且具有小尺寸，并且允许压阻测量值采集。 为此，在隔膜（2）的区域中形成至少一个通过至少一个连接连杆（5）连接到框架（3）的载体元件（4）。 此外，用于检测变形的压电电阻（6）位于连接连杆（5）的区域中。

    MICROMECHANICAL SENSOR ELEMENT
    4.
    发明申请
    MICROMECHANICAL SENSOR ELEMENT 有权
    微机电传感器元件

    公开(公告)号：US20090084182A1

    公开(公告)日：2009-04-02

    申请号：US12158425

    申请日：2006-11-21

    申请人： Joerg Muchow ,  Hubert Benzel ,  Simon Armbruster ,  Christoph Schelling

    发明人： Joerg Muchow ,  Hubert Benzel ,  Simon Armbruster ,  Christoph Schelling

    IPC分类号： G01L9/06 ,  G01P15/09 ,  H04R17/02

    CPC分类号： G01L9/0054 ,  G01L9/0055

    摘要： A micromechanical sensor element (1) is provided, which has a sealed diaphragm (2) affixed in a frame (3), exhibits high sensitivity at high overload resistance and has a small size, and which allows a piezoresistive measured-value acquisition. To this end, at least one carrier element (4), which is connected to the frame (3) via at least one connection link (5), is formed in the region of the diaphragm (2). Furthermore, piezoresistors (6) for detecting a deformation are situated in the region of the connection link (5).

    摘要翻译： 提供了一种微机械传感器元件（1），其具有固定在框架（3）中的密封隔膜（2），在高过载电阻下表现出高灵敏度并且具有小尺寸，并且允许压阻测量值采集。 为此，在隔膜（2）的区域中形成至少一个通过至少一个连接连杆（5）连接到框架（3）的载体元件（4）。 此外，用于检测变形的压电电阻（6）位于连接连杆（5）的区域中。

    Method for manufacturing a micromechanical sensor element
    6.
    发明授权
    Method for manufacturing a micromechanical sensor element 有权
    微机械传感器元件的制造方法

    公开(公告)号：US07572661B2

    公开(公告)日：2009-08-11

    申请号：US11223637

    申请日：2005-09-08

    申请人： Hubert Benzel ,  Stefan Finkbeiner ,  Matthias Illing ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

    发明人： Hubert Benzel ,  Stefan Finkbeiner ,  Matthias Illing ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00047 ,  B81B2203/0109 ,  B81C2201/0115 ,  B81C2201/0116 ,  G01L9/0045

    摘要： Described is a method for manufacturing a micromechanical sensor element and a micromechanical sensor element manufactured in particular using such a method which has a hollow space or a cavity and a membrane for detecting a physical variable. Different method steps are performed for manufacturing the sensor element, among other things, a structured etch mask having a plurality of holes or apertures being applied on a semiconductor substrate. Moreover, an etch process is used to create depressions in the semiconductor substrate beneath the holes in the structured etch mask. Anodization of the semiconductor material is subsequently carried out, the anodization taking place preferably starting from the created depressions in the semiconductor substrate. Due to this process, porous areas are created beneath the depressions, a lattice-like structure made of untreated, i.e., non-anodized, substrate material remaining between the porous areas and the depressions. This lattice-like structure extends preferably from the surface of the semiconductor into the depth. The etch mask for creating the depressions may be removed, optionally prior to or subsequent to the anodization. A temperature treatment is carried out for creating the hollow space and the membrane in the semiconductor substrate which forms the sensor element. During this process, the hollow space is created from the at least one area that has been rendered porous beneath a depression and the membrane above the hollow space is created from the lattice-like structure by rearranging the semiconductor material.

    摘要翻译： 描述了一种用于制造微机械传感器元件和微机械传感器元件的方法，特别是使用具有中空空间或空腔和用于检测物理变量的膜的方法制造的微机械传感器元件。 执行用于制造传感器元件的不同的方法步骤，其中包括施加在半导体衬底上的多个孔或孔的结构化蚀刻掩模。 此外，蚀刻工艺用于在结构化蚀刻掩模中的孔下面的半导体衬底中产生凹陷。 随后进行半导体材料的阳极氧化，阳极氧化发生优选从半导体衬底中产生的凹陷开始。 由于该过程，在凹陷下方产生多孔区域，由未处理的，即非阳极氧化的衬底材料制成的格状结构保留在多孔区域和凹陷之间。 这种格子状结构优选地从半导体的表面延伸到深度。 用于产生凹陷的蚀刻掩模可以任选地在阳极氧化之前或之后被去除。 进行温度处理，以形成形成传感器元件的半导体衬底中的中空空间和膜。 在该过程中，中空空间是从至少一个已经在凹陷下方多孔的区域产生的，并且通过重新排列半导体材料，从网格状结构产生中空空间之上的膜。

    Micromechanical sensor element
    7.
    发明申请
    Micromechanical sensor element 有权
    微机械传感器元件

    公开(公告)号：US20060063293A1

    公开(公告)日：2006-03-23

    申请号：US11223637

    申请日：2005-09-08

    申请人： Hubert Benzel ,  Stefan Finkbeiner ,  Matthias Illing ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

    发明人： Hubert Benzel ,  Stefan Finkbeiner ,  Matthias Illing ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00047 ,  B81B2203/0109 ,  B81C2201/0115 ,  B81C2201/0116 ,  G01L9/0045

    摘要： Described is a method for manufacturing a micromechanical sensor element and a micromechanical sensor element manufactured in particular using such a method which has a hollow space or a cavity and a membrane for detecting a physical variable. Different method steps are performed for manufacturing the sensor element, among other things, a structured etch mask having a plurality of holes or apertures being applied on a semiconductor substrate. Moreover, an etch process is used to create depressions in the semiconductor substrate beneath the holes in the structured etch mask. Anodization of the semiconductor material is subsequently carried out, the anodization taking place preferably starting from the created depressions in the semiconductor substrate. Due to this process, porous areas are created beneath the depressions, a lattice-like structure made of untreated, i.e., non-anodized, substrate material remaining between the porous areas and the depressions. This lattice-like structure extends preferably from the surface of the semiconductor into the depth. The etch mask for creating the depressions may be removed, optionally prior to or subsequent to the anodization. A temperature treatment is carried out for creating the hollow space and the membrane in the semiconductor substrate which forms the sensor element. During this process, the hollow space is created from the at least one area that has been rendered porous beneath a depression and the membrane above the hollow space is created from the lattice-like structure by rearranging the semiconductor material.

    摘要翻译： 描述了一种用于制造微机械传感器元件和微机械传感器元件的方法，特别是使用具有中空空间或空腔和用于检测物理变量的膜的方法制造的微机械传感器元件。 执行用于制造传感器元件的不同的方法步骤，其中包括施加在半导体衬底上的多个孔或孔的结构化蚀刻掩模。 此外，蚀刻工艺用于在结构化蚀刻掩模中的孔下面的半导体衬底中产生凹陷。 随后进行半导体材料的阳极氧化，阳极氧化发生优选从半导体衬底中产生的凹陷开始。 由于该过程，在凹陷下方产生多孔区域，由未处理的，即非阳极氧化的衬底材料制成的格状结构保留在多孔区域和凹陷之间。 这种格子状结构优选地从半导体的表面延伸到深度。 用于产生凹陷的蚀刻掩模可以任选地在阳极氧化之前或之后被去除。 进行温度处理，以形成形成传感器元件的半导体衬底中的中空空间和膜。 在该过程中，中空空间是从至少一个已经在凹陷下方多孔的区域产生的，并且通过重新排列半导体材料，从网格状结构产生中空空间之上的膜。

    Method for manufacturing a semiconductor component, as well as a semiconductor component, in particular a membrane sensor
    10.
    发明申请
    Method for manufacturing a semiconductor component, as well as a semiconductor component, in particular a membrane sensor 有权
    用于制造半导体部件的方法以及半导体部件，特别是膜传感器

    公开(公告)号：US20050181529A1

    公开(公告)日：2005-08-18

    申请号：US11011888

    申请日：2004-12-13

    申请人： Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

    发明人： Hubert Benzel ,  Frank Schaefer ,  Simon Armbruster ,  Gerhard Lammel ,  Christoph Schelling ,  Joerg Brasas

    IPC分类号： B81B3/00 ,  H01L21/00 ,  H01L29/24 ,  H01L33/00

    CPC分类号： B81C1/00158 ,  B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0115 ,  B81C2201/0116 ,  B81C2201/0136

    摘要： A manufacturing method for a micromechanical semiconductor element includes providing on a semiconductor substrate a patterned stabilizing element having at least one opening. The opening is arranged such that it allows access to a first region in the semiconductor substrate, the first region having a first doping. Furthermore, a selective removal of at least a portion of the semiconductor material having the first doping out of the first region of the semiconductor substrate is provided. In addition, a membrane is produced above the first region using a first epitaxy layer applied on the stabilizing element. In a further method step, at least a portion of the first region is used to produce a cavity underneath the stabilizing element. In this manner, the present invention provides for the production of the patterned stabilizing element by means of a second epitaxy layer, which is applied on the semiconductor substrate.

    摘要翻译： 微机电半导体元件的制造方法包括在半导体衬底上提供具有至少一个开口的图案化稳定元件。 开口被布置成使得其允许接近半导体衬底中的第一区域，第一区域具有第一掺杂。 此外，提供了选择性地去除半导体衬底的第一区域中具有第一掺杂的半导体材料的至少一部分。 此外，使用施加在稳定元件上的第一外延层，在第一区域上方产生膜。 在另一方法步骤中，第一区域的至少一部分用于在稳定元件下方产生空腔。 以这种方式，本发明提供了通过施加在半导体衬底上的第二外延层来生产图案化的稳定元件。