-
1.发明授权Nickel tin bonding system with barrier layer for semiconductor wafers and devices 有权具有用于半导体晶片和器件的阻挡层的镍锡键合系统公开(公告)号：US08247836B2
公开(公告)日：2012-08-21
申请号：US13035005
申请日：2011-02-25
CPC分类号： H01L33/0079 , H01L21/2007 , H01L23/4827 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/05073 , H01L2224/05082 , H01L2224/05166 , H01L2224/05669 , H01L2224/29083 , H01L2224/29111 , H01L2224/29155 , H01L2224/32503 , H01L2224/83193 , H01L2224/83444 , H01L2224/8381 , H01L2224/83825 , H01L2924/12041 , H01L2924/00012 , H01L2924/00014
摘要： A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.
摘要翻译： 公开了一种发光二极管结构，其包括由外延层形成的发光有源部分和支撑有源部分的载体基板。 在镍和锡中占主导地位的结合金属体系将活性部分连接到载体基底上。 至少一个钛粘附层位于活性部分和载体基底之间，并且铂阻挡层位于镍 - 锡粘合体系和钛粘合层之间。 铂层具有足以基本上防止镍锡粘合体系中的锡迁移到钛粘合层中或通过钛粘附层的厚度。
-
2.发明申请Nickel Tin Bonding System with Barrier Layer for Semiconductor Wafers and Devices 有权用于半导体晶片和器件的带有阻挡层的镍锡焊接系统公开(公告)号：US20110180839A1
公开(公告)日：2011-07-28
申请号：US13035005
申请日：2011-02-25
IPC分类号： H01L33/32 , H01L23/492
CPC分类号： H01L33/0079 , H01L21/2007 , H01L23/4827 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/05073 , H01L2224/05082 , H01L2224/05166 , H01L2224/05669 , H01L2224/29083 , H01L2224/29111 , H01L2224/29155 , H01L2224/32503 , H01L2224/83193 , H01L2224/83444 , H01L2224/8381 , H01L2224/83825 , H01L2924/12041 , H01L2924/00012 , H01L2924/00014
摘要： A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.
摘要翻译： 公开了一种发光二极管结构，其包括由外延层形成的发光有源部分和支撑有源部分的载体基板。 在镍和锡中占主导地位的结合金属体系将活性部分连接到载体基底上。 至少一个钛粘附层位于活性部分和载体基底之间，并且铂阻挡层位于镍 - 锡粘合体系和钛粘合层之间。 铂层具有足以基本上防止镍锡粘合体系中的锡迁移到钛粘合层中或通过钛粘附层的厚度。
-
3.发明授权Nickel tin bonding system with barrier layer for semiconductor wafers and devices 有权具有用于半导体晶片和器件的阻挡层的镍锡键合系统公开(公告)号：US07910945B2
公开(公告)日：2011-03-22
申请号：US11844127
申请日：2007-08-23
CPC分类号： H01L33/0079 , H01L21/2007 , H01L23/4827 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/05073 , H01L2224/05082 , H01L2224/05166 , H01L2224/05669 , H01L2224/29083 , H01L2224/29111 , H01L2224/29155 , H01L2224/32503 , H01L2224/83193 , H01L2224/83444 , H01L2224/8381 , H01L2224/83825 , H01L2924/12041 , H01L2924/00012 , H01L2924/00014
摘要： A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.
摘要翻译： 公开了一种发光二极管结构，其包括由外延层形成的发光有源部分和支撑有源部分的载体基板。 在镍和锡中占主导地位的结合金属体系将活性部分连接到载体基底上。 至少一个钛粘附层位于活性部分和载体基底之间，并且铂阻挡层位于镍 - 锡粘合体系和钛粘合层之间。 铂层具有足以基本上防止镍锡粘合体系中的锡迁移到钛粘合层中或通过钛粘附层的厚度。
-
公开(公告)号：US08643195B2
公开(公告)日：2014-02-04
申请号：US11428158
申请日：2006-06-30
IPC分类号： H01L29/40
CPC分类号： H01L33/0079 , H01L21/76251 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/05666 , H01L2224/2908 , H01L2224/29111 , H01L2224/29144 , H01L2224/29155 , H01L2224/32245 , H01L2224/32503 , H01L2224/8381 , H01L2224/83825 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/12036 , H01L2924/12041 , H01L2924/01028 , H01L2924/00014 , H01L2924/3512 , H01L2924/00
摘要： A semiconductor wafer, substrate, and bonding structure is disclosed that includes a device wafer that includes, for example, a plurality of light emitting diodes, a contact metal layer (or layers) on one side of the device wafer opposite the light emitting diodes, and a bonding metal system on the contact metal layer that predominates by weight in nickel and tin.
摘要翻译： 公开了一种半导体晶片，衬底和接合结构，其包括例如包括多个发光二极管的器件晶片，与发光二极管相对的器件晶片一侧的接触金属层（或多个层） 以及接触金属层上的结合金属系统，其重量在镍和锡中。
-
5.发明授权Modified gold-tin system with increased melting temperature for wafer bonding 有权用于晶片键合的改进的金锡系统具有增加的熔化温度公开(公告)号：US07855459B2
公开(公告)日：2010-12-21
申请号：US11534317
申请日：2006-09-22
IPC分类号： H01L23/48
CPC分类号： H01L33/0079 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/94 , H01L2224/2908 , H01L2224/29083 , H01L2224/29101 , H01L2224/29111 , H01L2224/32245 , H01L2224/838 , H01L2224/94 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2224/83 , H01L2924/00 , H01L2924/01029 , H01L2924/01028 , H01L2924/00014
摘要： A semiconductor structure and a bonding method are disclosed that includes a device wafer, a substrate wafer, and a metal bonding system between the device wafer and the substrate wafer. The metal bonding system includes gold, tin, and nickel, and includes at least one discrete layer of gold and tin that is at least about 88 percent gold by weight.
摘要翻译： 公开了一种半导体结构和接合方法，其包括在器件晶片和衬底晶片之间的器件晶片，衬底晶片和金属结合系统。 金属粘合系统包括金，锡和镍，并且包括金和锡的至少一个离散层，其为至少约88重量％的金。
-
公开(公告)号：US09490235B2
公开(公告)日：2016-11-08
申请号：US13224850
申请日：2011-09-02
IPC分类号： H01L33/54 , H01L25/075 , H01L25/16 , H01L33/52
CPC分类号： H01L25/0753 , H01L25/167 , H01L33/52 , H01L2224/48091 , H01L2224/48137 , H01L2924/00014
摘要： Light emitting devices, systems, and methods are disclosed. In one embodiment a light emitting device can include an emission area having one or more light emitting diodes (LEDs) mounted over an irregularly shaped mounting area. The light emitting device can further include a retention material disposed about the emission area. The retention material can also be irregularly shaped, and can be dispensed. Light emitting device can include more than one emission area per device.
摘要翻译： 公开了发光器件，系统和方法。 在一个实施例中，发光器件可以包括具有安装在不规则形状的安装区域上的一个或多个发光二极管（LED）的发射区域。 发光装置还可以包括围绕发射区域设置的保持材料。 保持材料也可以是不规则形状，并且可以分配。 发光器件可以包括每个器件多于一个发射区域。
-
7.发明申请NICKEL TIN BONDING SYSTEM WITH BARRIER LAYER FOR SEMICONDUCTOR WAFERS AND DEVICES 有权用于半导体波形和器件的带有阻挡层的镍粘结体系公开(公告)号：US20080210971A1
公开(公告)日：2008-09-04
申请号：US11844127
申请日：2007-08-23
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L21/2007 , H01L23/4827 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/83 , H01L33/62 , H01L2224/04026 , H01L2224/05073 , H01L2224/05082 , H01L2224/05166 , H01L2224/05669 , H01L2224/29083 , H01L2224/29111 , H01L2224/29155 , H01L2224/32503 , H01L2224/83193 , H01L2224/83444 , H01L2224/8381 , H01L2224/83825 , H01L2924/12041 , H01L2924/00012 , H01L2924/00014
摘要： A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer.
摘要翻译： 公开了一种发光二极管结构，其包括由外延层形成的发光有源部分和支撑有源部分的载体基板。 在镍和锡中占主导地位的结合金属体系将活性部分连接到载体基底上。 至少一个钛粘附层位于活性部分和载体基底之间，并且铂阻挡层位于镍 - 锡粘合体系和钛粘合层之间。 铂层具有足以基本上防止镍锡粘合体系中的锡迁移到钛粘合层中或通过钛粘附层的厚度。
-
公开(公告)号：US20120193651A1
公开(公告)日：2012-08-02
申请号：US13224850
申请日：2011-09-02
CPC分类号： H01L25/0753 , H01L25/167 , H01L33/52 , H01L2224/48091 , H01L2224/48137 , H01L2924/00014
摘要： Light emitting devices, systems, and methods are disclosed. In one embodiment a light emitting device can include an emission area having one or more light emitting diodes (LEDs) mounted over an irregularly shaped mounting area. The light emitting device can further include a retention material disposed about the emission area. The retention material can also be irregularly shaped, and can be dispensed. Light emitting device can include more than one emission area per device.
摘要翻译： 公开了发光器件，系统和方法。 在一个实施例中，发光器件可以包括具有安装在不规则形状的安装区域上的一个或多个发光二极管（LED）的发射区域。 发光装置还可以包括围绕发射区域设置的保持材料。 保持材料也可以是不规则形状，并且可以分配。 发光器件可以包括每个器件多于一个发射区域。
-
公开(公告)号：US09754926B2
公开(公告)日：2017-09-05
申请号：US13027006
申请日：2011-02-14
IPC分类号： H01L27/15 , H01L25/075 , H01L33/50 , H01L33/62
CPC分类号： H01L25/0753 , H01L33/505 , H01L33/62 , H01L2224/16
摘要： An electronic device may include a packaging substrate having a packaging substrate face with a plurality of electrically conductive pads on the packaging substrate face. A first light emitting diode die may bridge first and second ones of the electrically conductive pads. More particularly, the first light emitting diode die may include first anode and cathode contacts respectively coupled to the first and second electrically conductive pads using metallic bonds. Moreover, widths of the metallic bonds between the first anode contact and the first pad and between the first cathode contact and the second pad may be at least 60 percent of a width of the first light emitting diode die. A second light emitting diode die may bridge third and fourth ones of the electrically conductive pads. The second light emitting diode die may include second anode and cathode contacts respectively coupled to the third and fourth electrically conductive pads using metallic bonds. Widths of the metallic bonds between the second anode contact and the second pad and between the second cathode contact and the third pad may be at least 60 percent of a width of the first light emitting diode die.
-
公开(公告)号：US08575633B2
公开(公告)日：2013-11-05
申请号：US12329713
申请日：2008-12-08
摘要： A light emitting diode is disclosed that includes an active region and a plurality of exterior surfaces. A light enhancement feature is present on at least portions of one of the exterior surfaces of the diode, with the light enhancement feature being selected from the group consisting of shaping and texturing. A light enhancement feature is present on at least portions of each of the other exterior surfaces of the diode, with these light enhancement features being selected from the group consisting of shaping, texturing, and reflectors.
摘要翻译： 公开了一种包括有源区和多个外表面的发光二极管。 光增强特征存在于二极管的一个外表面的至少一部分上，光增强特征选自由成形和纹理组成的组。 在二极管的每个其它外表面的至少一部分上存在光增强特征，这些光增强特征选自由成形，纹理和反射器组成的组。
-
-
-
-
-
-
-
-
-
搜索结果
54 条记录 (耗时 0.03 秒)
