摘要:
The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
摘要:
The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
摘要:
The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
摘要:
A method of forming an adherent layer of metallurgy on a ceramic substrate which includes the steps of obtaining a ceramic material containing a polymeric binder and copper metallurgy patterns within the ceramic body. In one embodiment of the invention, the ceramic body also contains MgO.Thereafter, a surface layer of metallurgy is formed on the surface of the ceramic body. In one embodiment, the surface layer is nickel and in another embodiment, the surface layer is copper or gold.Then, the ceramic body undergoes a sintering cycle which includes the steps of pyrolysis, binder burnoff and, lastly, densification and, in some cases, crystallization. During densification and crystallization, there is a predetermined steam atmosphere which meets the following requirements: a partial pressure of oxygen less than that necessary to satisfy the equilibrium equation 4Cu+O.sub.2 =2Cu.sub.2 O; and a partial pressure of oxygen less than or equal to that necessary to satisfy the equilibrium equation 2Ni+O.sub.2 =2NiO for nickel in said surface metallurgy.
摘要:
A multilayered ceramic (MLC) substrate having embedded and exposed conductors suitable for mounting and interconnecting a plurality of electronic devices exterior thereof. The horizontal planar conductors comprise substantially a plurality of solid, non-porous, homogeneous metal patterns, whereas the vertical interplanar connection conductors are substantially porous metal conductors that are formed by methods such as screening. The process to form the MLC substrate involves forming a pattern of solid, nonporous conductors to a backing sheet having a release layer, then transferring the pattern to a ceramic green sheet. Zero X-Y shrinkage sintering processes allow the MLC substrate and solid metal conductors to be densified without distortion of the solid metal patterns or the ceramic.
摘要:
A multilayered ceramic (MLC) substrate having embedded and exposed conductors suitable for mounting and interconnecting a plurality of electronic devices exterior thereof. The horizontal planar conductors comprise substantially a plurality of solid, non-porous, homogeneous metal patterns, whereas the vertical interplanar connection conductors are substantially porous metal conductors that are formed by methods such as screening. The process to form the MLC substrate involves forming a pattern of solid, nonporous conductors to a backing sheet having a release layer, then transferring the pattern to a ceramic green sheet. Zero X-Y shrinkage sintering processes allow the MLC substrate and solid metal conductors to be densified without distortion of the solid metal patterns or the ceramic.
摘要:
The present invention relates generally to new structures for decals, and more particularly to electrically conductive decals filled with inorganic insulator material. Various methods and processes that are used to make these electrically conductive decals filled with inorganic dielectric material are disclosed.
摘要:
A device that contains a copper substrate; a rigidizing layer and/or a metal layer, and a non-graphitic hard carbon layer deposited on the rigidizing layer; and use as a heat sink or piston for electronic components.
摘要:
High melting temperature Pb/Sn 95/5 solder balls are connected to copper pads on the bottom of a ceramic chip carrier substrate by low melting temperature eutectic Pb/Sn solder. The connection is made by quick reflow to prevent dissolving Pb into the eutectic solder and raising its melting temperature. Then the module is placed on a fiberglass-epoxy circuit board with the solder balls on eutectic Pb/Sn solder bumps on copper pads of the board. The structure is reflowed to simultaneously melt the solder on both sides of the balls to allow each ball to center between the carrier pad and circuit board pad to form a more symmetric joint. This process results in structure that are more reliable under high temperature cycling. Also, to further improve reliability, the balls are made as large as the I/O spacing allows without bridging beam on balls; the two pads are about the same size with more solder on the smaller pad; the pads are at least 75% of the ball diameter; and the eutectic joints are made as large as possible without bridging between pads. For reliability at even higher temperature cycles or larger substrate sizes columns are used instead of balls.
摘要:
An integrated circuit thermal conduction module comprises a substrate having a chip-carrying surface and at least one integrated circuit chip on the substrate. A deformable, liquid-impermeable, thermally conductive film or foil extends over an upper surface of the chip. A piston has a lower surface which urges and conforms the film against the chip upper surface and which contains at least one open channel permitting coolant passage and contact with the film for conveying heat from the chip without direct contact between the coolant and chip. Preferably, the piston has a central passageway extending along the longitudinal axis for channeling the coolant through the piston, and has a plurality of channels extending radially outwardly from the central passageway along the lower face for directing coolant beneath the piston.