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    Methods and Compositions for Preparing Ge/Si Semiconductor Substrates
    3.
    发明申请
    Methods and Compositions for Preparing Ge/Si Semiconductor Substrates 审中-公开
    Ge / Si半导体衬底的制备方法和组成

    公开(公告)号：US20110062496A1

    公开(公告)日：2011-03-17

    申请号：US12946485

    申请日：2010-11-15

    申请人： John Kouvetakis ,  Yan-Yan Fang

    发明人： John Kouvetakis ,  Yan-Yan Fang

    IPC分类号： H01L29/78

    CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/0262 ,  Y10S438/933

    摘要： The present disclosure describes methods for preparing semiconductor structures, comprising forming a Ge layer on a semiconductor substrate using an admixture of (a) (GeH3)2CH2 and Ge2H6; (b) GeH3CH3 and Ge2H6; or (c) (GeH3)2CH2, GeH3CH3 and Ge2H6, wherein in all cases, Ge2H6 is in excess. The disclosure further provides semiconductor structures formed according to the methods of the invention as well as compositions comprising an admixture of (GeH3)2CH2 and/or GeH3CH3 and Ge2H6 in a ratio of between about 1:5 and 1:30. The methods herein provide, and the semiconductor structures provide, Ge layers formed on semiconductor substrates having threading dislocation density below 105/cm2 which can be useful in semiconductor devices.

    摘要翻译： 本公开描述了制备半导体结构的方法，包括使用（a）（GeH 3）2 CH 2和Ge 2 H 6的混合物在半导体衬底上形成Ge层; （b）GeH 3 CH 3和Ge 2 H 6; 或（c）（GeH 3）2 CH 2，GeH 3 CH 3和Ge 2 H 6，其中在所有情况下，Ge 2 H 6过量。 本发明还提供了根据本发明方法形成的半导体结构以及包含（GeH 3）2 CH 2和/或GeH 3 CH 3和Ge 2 H 6的混合物的比例为约1:5至1:30的组合物。 本文提供的方法，并且半导体结构提供了在半导体衬底上形成的穿透位错密度低于105 / cm 2的Ge层，其可用于半导体器件。

    SELECTIVE DEPOSITION OF SIGE LAYERS FROM SINGLE SOURCE OF SI-GE HYDRIDES
    4.
    发明申请
    SELECTIVE DEPOSITION OF SIGE LAYERS FROM SINGLE SOURCE OF SI-GE HYDRIDES 审中-公开
    从SI-GE HYDRIDES的单一来源选择性沉积信号层

    公开(公告)号：US20110045646A1

    公开(公告)日：2011-02-24

    申请号：US12866945

    申请日：2009-03-27

    申请人： John Kouvetakis ,  Yan-Yan Fang

    发明人： John Kouvetakis ,  Yan-Yan Fang

    IPC分类号： H01L21/20 ,  H01L21/336

    CPC分类号： H01L21/0262 ,  C23C16/04 ,  C23C16/30 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02642

    摘要： Single-source silyl-germanes hydrides can be used to deposit Gei_xSix seamlessly, conformally and selectively in the “source/drain” regions of prototypical transistors, leading to potentially significant performance gains derived from mobility enhancement, and applications in optoelectronics. Low-temperature heteroepitaxy (300-430° C.) produces monocrystalline microstructures, smooth and continuous surface morphologies and low defect densities. Strain engineering can be achieved by incorporating the entire SiGe content of precursors into the film.

    摘要翻译： 可以使用单源甲硅烷基锗烷氢化物在原型晶体管的“源极/漏极”区域中无缝地，保形地和选择性地沉积Gei_xSix，从而导致来自移动性增强的潜在的显着性能增益以及光电子学中的应用。 低温异质外延（300-430°C）产生单晶微结构，光滑连续的表面形貌和低缺陷密度。 应变工程可以通过将前体的整个SiGe含量纳入薄膜来实现。

    Methods and Compositions for Preparing Tensile Strained Ge on Ge1-ySNy Buffered Semiconductor Substrates
    5.
    发明申请
    Methods and Compositions for Preparing Tensile Strained Ge on Ge1-ySNy Buffered Semiconductor Substrates 审中-公开
    在Ge1-ySN缓冲半导体衬底上制备拉伸应变Ge的方法和组合物

    公开(公告)号：US20110198729A1

    公开(公告)日：2011-08-18

    申请号：US13033361

    申请日：2011-02-23

    申请人： John Kouvetakis ,  Yan-Yan Fang

    发明人： John Kouvetakis ,  Yan-Yan Fang

    IPC分类号： H01L29/12

    CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/0251 ,  H01L21/0262 ,  H01L21/02631

    摘要： The present disclosure describes methods for preparing semiconductor structures, comprising forming a Ge1-ySny buffer layer on a semiconductor substrate and forming a tensile strained Ge layer on the Ge1-ySny buffer layer using an admixture of (GeH3)2CH2 and Ge2H6 in a ratio of between 1:10 and 1:30. The disclosure further provides semiconductor structures having highly strained Ge epilayers (e.g., between about 0.15% and 0.45%) as well as compositions comprising an admixture of (GeH3)2CH2 and Ge2H6 in a ratio of between about 1:10 and 1:30. The methods herein provide, and the semiconductor structure provide, Ge epilayers having high strain levels which can be useful in semiconductor devices for example, in optical fiber communications devices.

    摘要翻译： 本公开内容描述了制备半导体结构的方法，包括在半导体衬底上形成Ge1-ySny缓冲层并在Ge1-ySny缓冲层上形成拉伸应变Ge层，使用（GeH 3）2 CH 2和Ge 2 H 6的混合比例 1:10和1:30之间。 本公开进一步提供具有高应变Ge外延层（例如，约0.15％至0.45％）的半导体结构以及包含（GeH 3）2 CH 2和Ge 2 H 6的混合物的组合物，其比例为约1:10至1:30。 本文的方法提供半导体结构提供具有高应变水平的Ge外延层，其可用于例如光纤通信设备中的半导体器件。

    Methods and compositions for preparing tensile strained Ge on Ge1-ySny buffered semiconductor substrates
    6.
    发明授权
    Methods and compositions for preparing tensile strained Ge on Ge1-ySny buffered semiconductor substrates 有权
    在Ge1-ySny缓冲半导体衬底上制备拉伸应变Ge的方法和组合物

    公开(公告)号：US07915104B1

    公开(公告)日：2011-03-29

    申请号：US12133221

    申请日：2008-06-04

    申请人： John Kouvetakis ,  Yan-Yan Fang

    发明人： John Kouvetakis ,  Yan-Yan Fang

    IPC分类号： H01L21/00 ,  H01L21/338 ,  H01L21/336 ,  H01L21/20 ,  H01L21/36

    CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/0251 ,  H01L21/0262 ,  H01L21/02631

    摘要： The present disclosure describes methods for preparing semiconductor structures, comprising forming a Ge1-ySny buffer layer on a semiconductor substrate and forming a tensile strained Ge layer on the Ge1-ySny buffer layer using an admixture of (GeH3)2CH2 and Ge2H6 in a ratio of between 1:10 and 1:30. The disclosure further provides semiconductor structures having highly strained Ge epilayers (e.g., between about 0.15% and 0.45%) as well as compositions comprising an admixture of (GeH3)2CH2 and Ge2H6 in a ratio of between about 1:10 and 1:30. The methods herein provide, and the semiconductor structure provide, Ge epilayers having high strain levels which can be useful in semiconductor devices for example, in optical fiber communications devices.

    摘要翻译： 本公开内容描述了制备半导体结构的方法，包括在半导体衬底上形成Ge1-ySny缓冲层并在Ge1-ySny缓冲层上形成拉伸应变Ge层，使用（GeH 3）2 CH 2和Ge 2 H 6的混合比例 1:10和1:30之间。 本公开进一步提供具有高应变Ge外延层（例如，约0.15％至0.45％）的半导体结构以及包含（GeH 3）2 CH 2和Ge 2 H 6的混合物的组合物，其比例为约1:10至1:30。 本文的方法提供半导体结构提供具有高应变水平的Ge外延层，其可用于例如光纤通信设备中的半导体器件。

    Methods and compositions for preparing Ge/Si semiconductor substrates
    7.
    发明授权
    Methods and compositions for preparing Ge/Si semiconductor substrates 有权
    制备Ge / Si半导体衬底的方法和组成

    公开(公告)号：US07910468B1

    公开(公告)日：2011-03-22

    申请号：US12133225

    申请日：2008-06-04

    申请人： John Kouvetakis ,  Yan-Yan Fang

    发明人： John Kouvetakis ,  Yan-Yan Fang

    IPC分类号： H01L21/3205 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/0262 ,  Y10S438/933

    摘要： The present disclosure describes methods for preparing semiconductor structures, comprising forming a Ge layer on a semiconductor substrate using an admixture of (a) (GeH3)2CH2 and Ge2H6; (b) GeH3CH3 and Ge2H6; or (c) (GeH3)2CH2, GeH3CH3 and Ge2H6, wherein in all cases, Ge2H6 is in excess. The disclosure further provides semiconductor structures formed according to the methods of the invention as well as compositions comprising an admixture of (GeH3)2CH2 and/or GeH3CH3 and Ge2H6 in a ratio of between about 1:5 and 1:30. The methods herein provide, and the semiconductor structures provide, Ge layers formed on semiconductor substrates having threading dislocation density below 105/cm2 which can be useful in semiconductor devices.

    摘要翻译： 本公开描述了制备半导体结构的方法，包括使用（a）（GeH 3）2 CH 2和Ge 2 H 6的混合物在半导体衬底上形成Ge层; （b）GeH 3 CH 3和Ge 2 H 6; 或（c）（GeH 3）2 CH 2，GeH 3 CH 3和Ge 2 H 6，其中在所有情况下，Ge 2 H 6过量。 本发明还提供了根据本发明方法形成的半导体结构以及包含（GeH 3）2 CH 2和/或GeH 3 CH 3和Ge 2 H 6的混合物的比例为约1:5至1:30的组合物。 本文提供的方法，并且半导体结构提供了在半导体衬底上形成的穿透位错密度低于105 / cm 2的Ge层，其可用于半导体器件。

    Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer
    8.
    发明授权
    Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer 有权
    通过反射晶格匹配的二硼化硼缓冲层在硅衬底上外延生长III族氮化物

    公开(公告)号：US07781356B2

    公开(公告)日：2010-08-24

    申请号：US10545484

    申请日：2004-02-12

    申请人： John Kouvetakis ,  Ignatius S. T. Tsong ,  John Tolle ,  Radek Roucka

    发明人： John Kouvetakis ,  Ignatius S. T. Tsong ,  John Tolle ,  Radek Roucka

    IPC分类号： C04B35/58 ,  C30B25/00

    CPC分类号： C30B25/02 ,  C30B29/10 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007

    摘要： A semiconductor structure and fabrication method is provided for integrating wide bandgap nitrides with silicon. The structure includes a substrate, a single crystal buffer layer formed by epitaxy over the substrate and a group III nitride film formed by epitaxy over the buffer layer. The buffer layer is reflective and conductive. The buffer layer may comprise B an element selected from the group consisting of Zr, Hf, Al. For example, the buffer layer may comprise ZrB2, AlB2 or HfB2. The buffer layer provides a lattice match with the group III nitride layer. The substrate can comprise silicon, silicon carbide (SiC), gallium arsenide (GaAs), sapphire or Al2O3. The group III nitride material includes GaN, AlN, InN, AlGaN, InGaN or AlInGaN and can form an active region. In a presently preferred embodiment, the buffer layer is ZrB2 and the substrate is Si(111) or Si(100) and the group III nitride layer comprises GaN. The ZrB2 buffer layer provides a reflective and conductive buffer layer that has a small lattice mismatch with GaN. The semiconductor structure can be used to fabricate active microelectronic devices, such as transistors including field effect transistors and bipolar transistors. The semiconductor structure also can be used to fabricate optoelectronic devices, such as laser diodes and light emitting diodes.

    摘要翻译： 提供了一种用于将宽带隙氮化物与硅结合的半导体结构和制造方法。 该结构包括衬底，通过衬底上的外延形成的单晶缓冲层和通过缓冲层上的外延形成的III族氮化物膜。 缓冲层是反射和导电的。 缓冲层可以包含选自由Zr，Hf，Al组成的组的元素。 例如，缓冲层可以包括ZrB2，AlB2或HfB2。 缓冲层提供与III族氮化物层的晶格匹配。 衬底可以包括硅，碳化硅（SiC），砷化镓（GaAs），蓝宝石或Al2O3。 III族氮化物材料包括GaN，AlN，InN，AlGaN，InGaN或AlInGaN，并且可以形成有源区。 在目前优选的实施方案中，缓冲层是ZrB 2，衬底是Si（111）或Si（100），III族氮化物层包括GaN。 ZrB2缓冲层提供与GaN具有小的晶格失配的反射和导电缓冲层。 半导体结构可用于制造有源微电子器件，例如包括场效应晶体管和双极晶体管的晶体管。 该半导体结构也可用于制造诸如激光二极管和发光二极管之类的光电器件。

    Carbon nitride and its synthesis
    10.
    发明授权
    Carbon nitride and its synthesis 失效
    碳氮化物及其合成

    公开(公告)号：US5606056A

    公开(公告)日：1997-02-25

    申请号：US248407

    申请日：1994-05-24

    申请人： John Kouvetakis ,  Michael Todd

    发明人： John Kouvetakis ,  Michael Todd

    IPC分类号： C01B21/06 ,  C04B35/58 ,  C23C16/34 ,  C07D251/72 ,  B32B9/00

    CPC分类号： C23C16/347 ,  C01B21/0605 ,  C04B35/58 ,  C01P2002/82 ,  C01P2002/88 ,  C01P2004/03 ,  Y10T428/30

    摘要： An extended solid bulk composition carbon nitride (C.sub.3 N.sub.4) having an atomic ratio of carbon to nitrogen in the range of 3:4 to 3.2:4 as a bulk solid, produced by thermal decomposition and chemical vapor deposition of precursors having formula (I):C.sub.3 N.sub.3 XX'N(MR.sub.3)(M'R'.sub.3) (I)wherein C3N3 is a cyclic 1,3,5-triazine group, X is a halogen selected from the group consisting of fluorine, chlorine, bromine, and iodine, X' is a halogen selected from the group consisting of fluorine, chlorine, bromine, and iodine, M is a group IV metal, M' is a group IV metal, R is an alkyl substituent, and R' is an alkyl substituent, producing a decomposition gas decomposition gas having formula II:XMR.sub.3 (II)

    摘要翻译： 通过热分解和化学气相沉积具有式（I）的前体制备的作为大量固体的碳/氮原子比在3:4至3.2:4范围内的固体本体组合物碳氮化物（C 3 N 4）： C3N3XX'N（MR3）（M'R'3）（I）其中C3N3是环状1,3,5-三嗪基，X是选自氟，氯，溴和碘的卤素，X '是选自氟，氯，溴和碘的卤素，M是IV族金属，M'是Ⅳ族金属，R是烷基取代基，R'是烷基取代基，产生 具有式II的分解气体分解气体：XMR3（II）