摘要:
Substrate support methods and apparatus include vertically aligned lift pins that have bearing surfaces that engage friction plates and/or magnetic fields to maintain the vertical orientation of the lift pins during substrate lifting. In some embodiments, a magnetic field and/or weighting may alternatively or additionally be used to control the vertical orientation of the lift pins, limit the angle of the lift pins, and/or prevent the lift pins from unintentionally binding in a susceptor as the susceptor is raised and prevent the resulting uneven support of the substrate.
摘要:
Embodiments of the disclosure generally provide a method and apparatus for processing a substrate in a vacuum process chamber. In one embodiment a vacuum process chamber is provided that includes a chamber body and lid disposed on the chamber body. A blocker plate is coupled to the lid and bounds a staging plenum therewith. A gas distribution plate is coupled to the lid. The gas distribution plate separates a main plenum defined between the gas distribution plate and the blocker plate from a process volume defined within the chamber body. The gas distribution plate and the blocker plate define a spacing gradient therebetween which influences mixing of gases within the main plenum.
摘要:
Apparatus and methods are provided that are adapted to match the impedance of an electrical load to an impedance of an electrical signal generator. The invention includes providing a plurality of electrical components adapted to collectively match the impedance of the electrical load to the impedance of the electrical signal generator. The electrical components are arranged symmetrically and concentrically about an axis. Additionally, the invention may also include a first connector adapted to electrically couple the electrical signal generator to the electrical components. Additionally, the invention may also include a second connector adapted to electrically couple the load to the electrical components. Numerous other aspects are provided.
摘要:
A method and apparatus for monitoring the integrity of a ground member coupling a substrate support to a chamber body in a plasma processing system is provided. In one embodiment, a processing chamber is provided that includes a ground path member coupled between a substrate support and a chamber body. A sensor is positioned to sense a metric indicative of current passing through the ground member. In another embodiment, a method monitoring the integrity of a ground member coupling a substrate support to a chamber body in a plasma processing chamber includes monitoring a metric indicative of current passing through the ground member during processing, and setting a flag in response to the metric exceeding a predefined threshold.
摘要:
A method and apparatus for monitoring the integrity of a ground member coupling a substrate support to a chamber body in a plasma processing system is provided. In one embodiment, a processing chamber is provided that includes a ground path member coupled between a substrate support and a chamber body. A sensor is positioned to sense a metric indicative of current passing through the ground member. In another embodiment, a method monitoring the integrity of a ground member coupling a substrate support to a chamber body in a plasma processing chamber includes monitoring a metric indicative of current passing through the ground member during processing, and setting a flag in response to the metric exceeding a predefined threshold.
摘要:
Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.
摘要:
Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.
摘要:
Malfunction of a component within an RF-powered plasma chamber is detected by observing an operating condition of the plasma chamber and detecting when the operating condition deviates from a previously observed range bounded by lower and upper limits. The lower and upper limits are determined by observing the minimum and maximum values of that operating condition during the processing of workpieces throughout one or more plasma chamber cleaning cycles immediately preceding the most recent cleaning of the plasma chamber.
摘要:
The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.
摘要:
A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.