公开(公告)号：US20100311249A1

公开(公告)日：2010-12-09

申请号：US12794756

申请日：2010-06-06

申请人： JOHN M. WHITE ,  Carl Sorensen ,  Robin Tiner ,  Beom Soo Park ,  Soo Young Choi

发明人： JOHN M. WHITE ,  Carl Sorensen ,  Robin Tiner ,  Beom Soo Park ,  Soo Young Choi

IPC分类号： H01L21/46 ,  C23C16/455 ,  C23C16/00 ,  C23C16/513 ,  C23C16/30 ,  C23C14/00 ,  H05H1/24 ,  C23C16/56

CPC分类号： C23C16/45565 ,  C23C16/45591 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449

摘要： Embodiments of the disclosure generally provide a method and apparatus for processing a substrate in a vacuum process chamber. In one embodiment a vacuum process chamber is provided that includes a chamber body and lid disposed on the chamber body. A blocker plate is coupled to the lid and bounds a staging plenum therewith. A gas distribution plate is coupled to the lid. The gas distribution plate separates a main plenum defined between the gas distribution plate and the blocker plate from a process volume defined within the chamber body. The gas distribution plate and the blocker plate define a spacing gradient therebetween which influences mixing of gases within the main plenum.

摘要翻译： 本公开的实施例通常提供用于在真空处理室中处理衬底的方法和装置。 在一个实施例中，提供真空处理室，其包括设置在室主体上的室主体和盖。 阻挡板联接到盖子并且与其分隔起来。 气体分配板联接到盖子上。 气体分配板将限定在气体分配板和阻挡板之间的主增压室与室主体内限定的过程体积分开。 气体分配板和阻挡板限定了它们之间的间隔梯度，其影响主增压室内气体的混合。

公开(公告)号：US08147614B2

公开(公告)日：2012-04-03

申请号：US12794756

申请日：2010-06-06

申请人： John M. White ,  Carl Sorensen ,  Robin Tiner ,  Beom Soo Park ,  Soo Young Choi

发明人： John M. White ,  Carl Sorensen ,  Robin Tiner ,  Beom Soo Park ,  Soo Young Choi

IPC分类号： C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/45591 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449

摘要： Embodiments of the disclosure generally provide a method and apparatus for processing a substrate in a vacuum process chamber. In one embodiment a vacuum process chamber is provided that includes a chamber body and lid disposed on the chamber body. A blocker plate is coupled to the lid and bounds a staging plenum therewith. A gas distribution plate is coupled to the lid. The gas distribution plate separates a main plenum defined between the gas distribution plate and the blocker plate from a process volume defined within the chamber body. The gas distribution plate and the blocker plate define a spacing gradient therebetween which influences mixing of gases within the main plenum.

摘要翻译： 本公开的实施例通常提供用于在真空处理室中处理衬底的方法和装置。 在一个实施例中，提供真空处理室，其包括设置在室主体上的室主体和盖。 阻挡板联接到盖子并且与其分隔起来。 气体分配板联接到盖子上。 气体分配板将限定在气体分配板和阻挡板之间的主增压室与室主体内限定的过程体积分开。 气体分配板和阻挡板限定了它们之间的间隔梯度，其影响主增压室内气体的混合。

公开(公告)号：US08174400B2

公开(公告)日：2012-05-08

申请号：US13042408

申请日：2011-03-07

申请人： Beom Soo Park ,  Soo Young Choi ,  John M. White ,  Hong Soon Kim ,  James Hoffman

发明人： Beom Soo Park ,  Soo Young Choi ,  John M. White ,  Hong Soon Kim ,  James Hoffman

IPC分类号： G08B21/00

CPC分类号： H01J37/32174 ,  H01J37/32935 ,  H03H7/40

摘要： Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.

摘要翻译： 通过检测可变频率RF电源的频率是否移动到建立的下限和上限之外，来检测RF供电的等离子体处理室内的异常情况。 在第一方面，根据在新处理步骤开始之后或在采样控制信号改变状态之后采样的电源的频率，建立第一对下限和上限。 在第二方面，第二对下限和上限不适合电源的频率。 两个方面优选一起用于检测异常状况的不同出现。

公开(公告)号：US20110095402A1

公开(公告)日：2011-04-28

申请号：US12930230

申请日：2010-12-30

申请人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

发明人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

IPC分类号： H01L29/51

CPC分类号： E06C7/48 ,  E06C7/482 ,  E06C7/484

摘要： An α-SiNx:H gate dielectric film deposited over a substrate surface having a surface area larger than 100 cm×100 cm, wherein said α-SiNx:H gate dielectric film exhibits a film thickness which varies by less than about 20% over said surface area, a film density which varies by less than about 17% over said surface area, and wherein said film exhibits a Si—H bonded structure content of less than about 15 atomic % over said surface area.

摘要翻译： 一种沉积在表面积大于100cm×100cm的衬底表面上的α-SiNx：H栅极电介质膜，其中所述α-SiNx：H栅极电介质膜的膜厚比所述 表面积，比所述表面积变化小于约17％的膜密度，并且其中所述膜在所述表面积上表现出小于约15原子％的Si-H键合结构含量。

公开(公告)号：US20100245084A1

公开(公告)日：2010-09-30

申请号：US12661699

申请日：2010-03-19

申请人： Beom Soo Park ,  Hong Soon Kim ,  Soo Young Choi ,  James Hoffman ,  Suhail Anwar ,  John M. White

发明人： Beom Soo Park ,  Hong Soon Kim ,  Soo Young Choi ,  James Hoffman ,  Suhail Anwar ,  John M. White

IPC分类号： G08B21/00

CPC分类号： H01J37/32183 ,  H01J37/32935 ,  H01J37/3299

摘要： Malfunction of a component within an RF-powered plasma chamber is detected by observing an operating condition of the plasma chamber and detecting when the operating condition deviates from a previously observed range bounded by lower and upper limits. The lower and upper limits are determined by observing the minimum and maximum values of that operating condition during the processing of workpieces throughout one or more plasma chamber cleaning cycles immediately preceding the most recent cleaning of the plasma chamber.

摘要翻译： 通过观察等离子体室的操作状态并检测何时操作条件偏离由下限和上限限定的先前观察范围，来检测RF供电的等离子体室内部件的故障。 通过在紧邻等离子体室的最近清洁之前的一个或多个等离子体室清洁循环期间观察工件处理期间该操作条件的最小值和最大值来确定下限和上限。

公开(公告)号：US07785672B2

公开(公告)日：2010-08-31

申请号：US11021416

申请日：2004-12-22

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Beom Soo Park

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Beom Soo Park

IPC分类号： H05G1/24 ,  H05H1/02

CPC分类号： H01J37/32082 ,  C23C16/345 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/3244 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/31612

摘要： We have discovered methods of controlling a combination of PECVD deposition process parameters during deposition of thin films which provides improved control over surface standing wave effects which affect deposited film thickness uniformity and physical property uniformity. By minimizing surface standing wave effects, the uniformity of film properties across a substrate surface onto which the films have been deposited is improved. In addition, we have developed a gas diffusion plate design which assists in the control of plasma density to be symmetrical or asymmetrical over a substrate surface during film deposition, which also provides improved control over uniformity of deposited film thickness.

摘要翻译： 我们已经发现了在沉积薄膜期间控制PECVD沉积工艺参数的组合的方法，其提供了影响沉积膜厚度均匀性和物理性质均匀性的表面驻波效应的改进控制。 通过最小化表面驻波效应，改善了膜沉积在其上的衬底表面上的膜性质的均匀性。 此外，我们开发了一种气体扩散板设计，其有助于在膜沉积期间等离子体密度在衬底表面上对称或不对称，这也提供了对沉积膜厚度的均匀性的改进的控制。

公开(公告)号：US20090283039A1

公开(公告)日：2009-11-19

申请号：US12467477

申请日：2009-05-18

申请人： JOHN M. WHITE ,  Soo Young Choi ,  Beom Soo Park ,  Gaku Furuta ,  Young Jin Choi ,  Robin L. Tiner

发明人： JOHN M. WHITE ,  Soo Young Choi ,  Beom Soo Park ,  Gaku Furuta ,  Young Jin Choi ,  Robin L. Tiner

IPC分类号： C23C16/54 ,  F28D7/00

CPC分类号： F28D7/00 ,  C23C16/4405 ,  F28D2021/0078 ,  F28F9/26

摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.

摘要翻译： 本发明通常包括组件之间的联接。 当点燃离开处理室的等离子体时，反应气体离子可通过许多部件行进到处理室。 反应气体离子可能相当热，并导致各种部件变得非常热，因此，装置部件之间的密封可能失效。 因此，冷却反应气体离子可以通过其移动的任何金属组分可能是有益的。 然而，在冷却的金属组分和陶瓷组分之间的界面处，由于反应气体离子的热量和金属组分的冷却，陶瓷组分可能经历足以破坏陶瓷材料的温度梯度。 因此，将金属部件的凸缘延伸到陶瓷部件中可以减小界面处的温度梯度并减少陶瓷部件的开裂。

公开(公告)号：US07589031B2

公开(公告)日：2009-09-15

申请号：US11607702

申请日：2006-12-01

申请人： Suhail Anwar ,  Chung-Hee Park ,  Beom Soo Park ,  Han Byoul Kim ,  Soo Young Choi ,  John M. White

发明人： Suhail Anwar ,  Chung-Hee Park ,  Beom Soo Park ,  Han Byoul Kim ,  Soo Young Choi ,  John M. White

IPC分类号： H01L21/31

CPC分类号： H01L21/02274 ,  C23C16/345 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3185 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/67236 ,  H01L29/66765 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of PECVD deposition of silicon-containing films has been discovered and further developed. The method is particularly useful when the films are deposited on substrates having surface areas which are larger than 25,000 cm2. The method prevents the deposition of partially reacted silicon-containing species which form a powdery material or haze (contaminant compound) on the substrate surface. The contaminant compounds are avoided by assuring that the power applied to form a plasma in the PECVD process is maintained, at least at a minimal level, until reactive silicon-containing precursor gases present above the surface of the substrate have been reacted or evacuated from the plasma processing area.

摘要翻译： 已经发现并进一步开发了含硅膜的PECVD沉积方法。 当膜沉积在具有大于25,000cm 2的表面积的基底上时，该方法是特别有用的。 该方法防止在基材表面上沉积形成粉末状物质或雾度（污染物化合物）的部分反应的含硅物质。 通过确保在PECVD工艺中施加以形成等离子体的功率至少保持最小水平，直到存在于衬底表面上方的反应性含硅前体气体已经从 等离子处理区。

公开(公告)号：US20090007846A1

公开(公告)日：2009-01-08

申请号：US12234359

申请日：2008-09-19

申请人： ERNST KELLER ,  John M. White ,  Robin L. Tiner ,  Jiri Kucera ,  Soo Young Choi ,  Beom Soo Park ,  Michael Starr

发明人： ERNST KELLER ,  John M. White ,  Robin L. Tiner ,  Jiri Kucera ,  Soo Young Choi ,  Beom Soo Park ,  Michael Starr

IPC分类号： C23C16/00

CPC分类号： H01J37/3244 ,  C23C16/45565

摘要： An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas or gases through the diffuser and is designed to provide vertical suspension to a diffuser that is supported at its perimeter, or capable of supporting the diffuser without a perimeter support. In one aspect, the at least one support member is a portion of a gas delivery conduit and in another embodiment is a plurality of support members separated from the gas delivery conduit. The at least one support member is capable of translating vertical lift, or vertical compression to a center area of the diffuser. A method and apparatus for controlling gas flow from the gas delivery conduit to the gas distribution plate is also disclosed.

摘要翻译： 公开了一种用于支撑气体分布板的大部分中心部分的装置和方法。 至少一个支撑构件能够通过配合连接件接合和分离扩散器，而不阻止气体或气体流过扩散器，并且被设计成向在其周边支撑的扩散器提供垂直悬架，或者能够支撑 扩散器没有周界支撑。 在一个方面，所述至少一个支撑构件是气体输送导管的一部分，并且在另一个实施例中是与气体输送导管分离的多个支撑构件。 至少一个支撑构件能够将垂直升降或垂直压缩平移到扩散器的中心区域。 还公开了一种用于控制从气体输送管道到气体分配板的气流的方法和装置。

公开(公告)号：US20080187682A1

公开(公告)日：2008-08-07

申请号：US11955575

申请日：2007-12-13

申请人： Beom Soo Park ,  Robin L. Tiner ,  Soo Young Choi ,  John M. White

发明人： Beom Soo Park ,  Robin L. Tiner ,  Soo Young Choi ,  John M. White

IPC分类号： C23C16/513 ,  C23C16/00

CPC分类号： C23C16/4401 ,  C23C16/5096 ,  H01J37/32623 ,  H01J37/32697

摘要： A method and apparatus for processing a substrate are provided. The chamber body comprises a chamber bottom and a sidewall having a slit valve. A substrate support comprising a support body is disposed in the chamber body. A first end of at least one wide RF ground strap is coupled with the support body and a second end of at least one RF ground strap is coupled with the chamber bottom. At least one extension bar is positioned along a peripheral edge of the support body. The method comprises providing a processing chamber having a slit valve and a substrate support, providing RF power to a distribution plate disposed over the substrate support, flowing gas through the distribution plate, plasma processing a substrate disposed on the substrate support, and reducing the generation of plasma adjacent to the slit valve.

摘要翻译： 提供了一种用于处理衬底的方法和设备。 腔室主体包括腔室底部和具有狭缝阀的侧壁。 包括支撑体的基板支撑件设置在室主体中。 至少一个宽RF接地带的第一端与支撑体耦合，并且至少一个RF接地带的第二端与腔室底部联接。 至少一个延伸杆沿着支撑体的外围边缘定位。 该方法包括提供具有狭缝阀和衬底支撑件的处理室，向布置在衬底支撑件上方的分配板提供RF功率，使气体流过分布板，等离子体处理设置在衬底支架上的衬底，并减少发电 的等离子体。