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    SINGLE WAFER IMPLANTER FOR SILICON-ON-INSULATOR WAFER FABRICATION
    1.
    发明申请
    SINGLE WAFER IMPLANTER FOR SILICON-ON-INSULATOR WAFER FABRICATION 审中-公开
    用于绝缘子绝缘子制造的单波长植绒

    公开(公告)号：US20090084988A1

    公开(公告)日：2009-04-02

    申请号：US11862810

    申请日：2007-09-27

    申请人： Julian Blake ,  Yuri Erokhin ,  Jonathan England

    发明人： Julian Blake ,  Yuri Erokhin ,  Jonathan England

    IPC分类号： G21K5/08

    CPC分类号： H01J37/3171 ,  H01J37/20 ,  H01J2237/0815 ,  H01J2237/2001 ,  H01J2237/31703 ,  H01L21/67109 ,  H01L21/6831

    摘要： An ion implanter is disclosed. One such ion implanter includes an ion beam source configured to generate oxygen, nitrogen, helium, or hydrogen ions into an ion beam with a specific dose range, and an analyzer magnet configured to remove undesired species from the ion beam. The ion implanter includes an electrostatic chuck having a backside gas thermal coupling that is configured to hold a single workpiece for silicon-on-insulator implantation by the ion beam and is configured to cool the workpiece to a temperature in a range of approximately 300° C. to 600° C.

    摘要翻译： 公开了一种离子注入机。 一个这样的离子注入机包括被配置为将氧，氮，氦或氢离子产生到具有特定剂量范围的离子束中的离子束源，以及被配置为从离子束去除不想要的物质的分析器磁体。 离子注入机包括具有后侧气体热耦合的静电卡盘，其被配置为保持单个工件用于通过离子束进行绝缘体上硅的注入，并且被配置为将工件冷却至约300℃的温度 至600℃

    Techniques for temperature controlled ion implantation
    3.
    发明申请
    Techniques for temperature controlled ion implantation 有权
    温度控制离子注入技术

    公开(公告)号：US20080076194A1

    公开(公告)日：2008-03-27

    申请号：US11525878

    申请日：2006-09-23

    申请人： Julian Blake ,  Jonathan England ,  Scott Holden ,  Steven R. Walther ,  Reuel Liebert ,  Richard S. Muka ,  Ukyo Jeong ,  Jinning Liu ,  Kyu-Ha Shim ,  Sandeep Mehta

    发明人： Julian Blake ,  Jonathan England ,  Scott Holden ,  Steven R. Walther ,  Reuel Liebert ,  Richard S. Muka ,  Ukyo Jeong ,  Jinning Liu ,  Kyu-Ha Shim ,  Sandeep Mehta

    IPC分类号： H01L21/425

    CPC分类号： H01J37/3171 ,  H01J2237/2001

    摘要： Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.

    摘要翻译： 公开了用于温度控制离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于温度控制的离子注入的装置。 该装置可以包括至少一个热传感器，适于在离子注入机的端站内的离子注入过程期间测量晶片的温度。 该装置还可以包括耦合到终端站的热调节单元。 该装置还可以包括与热传感器和热调节单元通信的控制器，其中控制器将测量的温度与期望的晶片温度进行比较，并且使得热调节单元基于比较来调节晶片的温度。

    Technique for low-temperature ion implantation
    4.
    发明授权
    Technique for low-temperature ion implantation 有权
    低温离子注入技术

    公开(公告)号：US07935942B2

    公开(公告)日：2011-05-03

    申请号：US11504367

    申请日：2006-08-15

    申请人： Jonathan England ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

    发明人： Jonathan England ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

    IPC分类号： H01J37/00

    CPC分类号： H01L21/67213 ,  H01L21/26593 ,  H01L21/67098 ,  H01L21/67109 ,  H01L21/67248

    摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

    摘要翻译： 公开了一种用于低温离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。 该装置可以包括位于离子注入机内的端站附近的预冷站。 该装置还可以包括在预冷站内的冷却机构。 该装置还可以包括耦合到预冷站和终端站的加载组件。 该装置还可以包括与加载组件和冷却机构通信的控制器，以将晶片加载到预冷站中，将晶片冷却到预定温度范围，并将冷却的晶片装载到终端站，其中 冷却晶片进行离子注入工艺。

    Technique for low-temperature ion implantation
    5.
    发明申请
    Technique for low-temperature ion implantation 有权
    低温离子注入技术

    公开(公告)号：US20080044938A1

    公开(公告)日：2008-02-21

    申请号：US11504367

    申请日：2006-08-15

    申请人： Jonathan England ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

    发明人： Jonathan England ,  Steven R. Walther ,  Richard S. Muka ,  Julian Blake ,  Paul J. Murphy ,  Reuel B. Liebert

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67213 ,  H01L21/26593 ,  H01L21/67098 ,  H01L21/67109 ,  H01L21/67248

    摘要： A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

    摘要翻译： 公开了一种用于低温离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于低温离子注入的装置。 该装置可以包括位于离子注入机内的端站附近的预冷站。 该装置还可以包括在预冷站内的冷却机构。 该装置还可以包括耦合到预冷站和终端站的加载组件。 该装置还可以包括与加载组件和冷却机构通信的控制器，以将晶片加载到预冷站中，将晶片冷却到预定温度范围，并将冷却的晶片装载到终端站， 冷却晶片进行离子注入工艺。

    POWER SAG DETECTION AND CONTROL IN ION IMPLANTING SYSTEM
    6.
    发明申请
    POWER SAG DETECTION AND CONTROL IN ION IMPLANTING SYSTEM 失效
    离子植入系统中的电源检测和控制

    公开(公告)号：US20060108544A1

    公开(公告)日：2006-05-25

    申请号：US10995836

    申请日：2004-11-23

    申请人： Steven Richards ,  Julian Blake ,  Steven Campbell

    发明人： Steven Richards ,  Julian Blake ,  Steven Campbell

    IPC分类号： H01J37/08

    CPC分类号： H01J37/241 ,  H01J37/304 ,  H01J2237/0203

    摘要： In one aspect, the present invention provides a method of managing fluctuations in power supplied to a semiconductor processing apparatus that includes monitoring the power supplied to the apparatus to detect the occurrence of a power fluctuation event during a semiconductor processing session. Upon detection of a power fluctuation event, the semiconductor processing can be interrupted. After the end of the power fluctuation event, at least one operational parameter of the apparatus, e.g., vacuum level in an evacuated processing chamber, can be measured, and the semiconductor processing can be resumed when the measured operational parameter is within an acceptable range. The measured operational parameter can preferably include a parameter that recovers more slowly than others when adversely affected by a power fluctuation event.

    摘要翻译： 一方面，本发明提供了一种管理提供给半导体处理装置的功率波动的方法，该方法包括监视提供给该装置的功率，以检测半导体处理会话期间发生功率波动事件。 在检测到功率波动事件时，可以中断半导体处理。 在功率波动事件结束之后，可以测量设备的至少一个操作参数，例如真空处理室中的真空度，并且当测量的操作参数在可接受的范围内时，可以恢复半导体处理。 测量的操作参数可以优选地包括当受到功率波动事件的不利影响时，比其他参数恢复得更慢的参数。

    Triboelectric charge controlled electrostatic clamp
    7.
    发明授权
    Triboelectric charge controlled electrostatic clamp 有权
    摩擦电荷控制静电夹

    公开(公告)号：US09082804B2

    公开(公告)日：2015-07-14

    申请号：US13021838

    申请日：2011-02-07

    申请人： Julian Blake ,  Dale K. Stone ,  Lyudmila Stone ,  David Suuronen ,  Shigeo Oshiro

    发明人： Julian Blake ,  Dale K. Stone ,  Lyudmila Stone ,  David Suuronen ,  Shigeo Oshiro

    IPC分类号： H01L21/683

    CPC分类号： H01L21/6831

    摘要： An electrostatic clamp which more effectively removes built up charge from a substrate prior to removal is disclosed. Currently, the lift pins and the ground pins are the only mechanism used to remove charge from the substrate after implantation. The present discloses describes an electrostatic chuck in which the top dielectric surface has an embedded conductive region, such as a ring shaped conductive region in the sealing ring. Thus, regardless of the orientation of the substrate during release, at least a portion of the substrate will contain the conductive region on the dielectric layer of the workpiece support. This conductive region may be connected to ground through the use of conductive vias in the dielectric layer. In some embodiments, these conductive vias are the fluid conduits used to supply gas to the back side of the substrate.

    摘要翻译： 公开了一种在去除之前更有效地从衬底去除积聚电荷的静电夹。 目前，升降针和接地引脚是用于在植入后从衬底去除电荷的唯一机制。 本公开描述了一种静电卡盘，其中顶部电介质表面具有嵌入的导电区域，例如密封环中的环形导电区域。 因此，无论衬底在释放过程中的取向如何，衬底的至少一部分将在工件支撑体的电介质层上包含导电区域。 该导电区域可以通过使用电介质层中的导电通孔而连接到地。 在一些实施例中，这些导电通孔是用于向衬底的背侧供应气体的流体导管。

    Method for junction avoidance on edge of workpieces
    10.
    发明授权
    Method for junction avoidance on edge of workpieces 有权
    工件边缘接合避免的方法

    公开(公告)号：US08598021B2

    公开(公告)日：2013-12-03

    申请号：US13248056

    申请日：2011-09-29

    申请人： Julian Blake ,  Dale Stone

    发明人： Julian Blake ,  Dale Stone

    IPC分类号： H01L21/425

    CPC分类号： H01L21/26513 ,  H01L21/2658 ,  H01L31/068 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of implanting ions into a workpiece without the formation of junctions, which impact the performance of the workpiece, is disclosed. To counteract the effect of dopant being implanted into the edge of the workpiece, components made of material having an opposite conductivity are placed near the workpiece. As ions from the beam strike these components, ions from the material are sputtered. These ions have the opposite conductivity as the implanted ions, and therefore inhibit the formation of junctions.

    摘要翻译： 公开了一种将离子注入工件而不形成影响工件性能的接合点的方法。 为了抵消注入到工件边缘中的掺杂剂的影响，由具有相反电导率的材料制成的部件被放置在工件附近。 当来自光束的离子撞击这些组分时，来自材料的离子被溅射。 这些离子具有与注入离子相反的导电性，因此抑制结的形成。