-
公开(公告)号：US20150325405A1
公开(公告)日：2015-11-12
申请号：US14275763
申请日：2014-05-12
IPC分类号： H01J37/20 , H01J37/317 , H01J37/305 , G21K5/08 , H01J37/304
CPC分类号： H01J37/20 , G21K5/08 , H01J37/304 , H01J37/3053 , H01J37/3171 , H01J37/32412 , H01J2237/024 , H01J2237/061 , H01J2237/1503
摘要： A processing apparatus including a process chamber, a plasma source disposed within the process chamber, wherein the plasma source is movable in a first direction and is configured to emit an ion beam along a second direction that is orthogonal to the first direction. The apparatus may further include a platen disposed within the process chamber for supporting a substrate, and an ion beam current sensor that is disposed adjacent to the platen.
摘要翻译： 一种处理装置，包括处理室，设置在处理室内的等离子体源，其中等离子体源可沿第一方向移动并且被配置为沿着与第一方向正交的第二方向发射离子束。 该设备还可以包括设置在处理室内的用于支撑衬底的压板和邻近压板设置的离子束电流传感器。
-
2.发明授权Method and system for in-situ monitoring of cathode erosion and predicting cathode lifetime 有权阴极侵蚀现场监测方法及系统，预测阴极寿命公开(公告)号：US08756021B2
公开(公告)日：2014-06-17
申请号：US12912312
申请日：2010-10-26
IPC分类号： G01B3/44
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/242 , H01J2237/304
摘要： A method of controlling operation of an indirectly-heated cathode (IHC) ion source includes a step of measuring a rate of loss of cathode weight of the IHC ion source that occurs during operation using a first cathode configuration and under a first set of operation conditions. A maximum weight loss for the first cathode configuration is determined, and a cathode lifetime is calculated based upon the rate of cathode weight loss and the maximum weight loss. A further method includes receiving a minimum source bias power value for operation of a cathode in a first configuration, measuring a rate of decrease in source bias power for a cathode in the first configuration, and calculating a lifetime of the cathode based upon the minimum source bias power and rate of decrease in source bias power.
摘要翻译： 控制间接加热的阴极（IHC）离子源的操作的方法包括以下步骤：测量在使用第一阴极配置的操作期间和在第一组操作条件下发生的IHC离子源的阴极重量损失率 。 确定第一阴极构造的最大重量损失，并且基于阴极重量损失率和最大重量损失计算阴极寿命。 另一种方法包括：在第一配置中接收用于阴极操作的最小源偏置功率值，测量第一配置中阴极的源极偏置功率的降低率，以及基于最小源计算阴极的寿命 偏置功率和源偏置功率的降低率。
-
公开(公告)号：US20130001440A1
公开(公告)日：2013-01-03
申请号：US13175494
申请日：2011-07-01
IPC分类号： G21K5/08
CPC分类号： H01J37/32412
摘要： A system for implanting a substrate. The system includes a substrate holder disposed within a process chamber of the system and coupled to ground. The system also includes an electrode disposed within the process chamber and coupled to a power source, the power source configured to supply voltage to the electrode as an unbalanced voltage pulse train, wherein a negative peak voltage during a negative voltage pulse period of the unbalanced voltage pulse train is higher than a positive peak voltage during a positive voltage pulse period of the unbalanced pulse train. The system further includes a movable mask, wherein the movable mask is configured to move between a first position proximate the substrate holder, and a second position proximate the driven electrode.
摘要翻译： 一种用于植入衬底的系统。 该系统包括设置在系统的处理室内并耦合到地面的衬底保持器。 该系统还包括设置在处理室内并耦合到电源的电极，电源被配置为向电极提供电压作为不平衡电压脉冲串，其中在不平衡电压的负电压脉冲周期期间的负峰值电压 在不平衡脉冲串的正电压脉冲期间，脉冲串高于正峰值电压。 该系统还包括可移动掩模，其中可移动掩模构造成在靠近基板保持器的第一位置与靠近驱动电极的第二位置之间移动。
-
公开(公告)号：US20110092059A1
公开(公告)日：2011-04-21
申请号：US12756036
申请日：2010-04-07
IPC分类号： H01L21/266 , B05C11/00 , B05B5/025
CPC分类号： C23C14/042 , C23C14/48 , H01J37/3171 , H01J2237/08 , H01J2237/303 , H01J2237/31711 , H01L21/266
摘要： Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.
摘要翻译： 本文中公开了一种用于处理衬底的改进技术。 在一个特定的示例性实施例中，可以使用用于处理衬底的掩模来实现该技术。 掩模可以并入基板处理系统中，例如离子注入系统。 掩模可以包括设置在第一排中的一个或多个第一孔; 以及设置在第二排中的一个或多个第二孔，每排沿着所述掩模的宽度方向延伸，其中所述一个或多个第一孔和所述一个或多个第二孔是不均匀的。
-
公开(公告)号：US07816239B2
公开(公告)日：2010-10-19
申请号：US12581491
申请日：2009-10-19
申请人： Julian G. Blake , Kevin M. Daniels
发明人： Julian G. Blake , Kevin M. Daniels
IPC分类号： H01L21/04
CPC分类号： H01L21/266 , H01J37/3171 , H01J2237/31711 , H01L31/18
摘要： Techniques for manufacturing solar cells are disclosed. In one particular exemplary embodiment, the technique may comprise disposing a mask upstream of the solar cell, the mask comprising a plurality of filaments spaced apart from one another to define at least one aperture; directing a ribbon ion beam of desired species toward the solar cell to ion implant a portion of the solar cell defined by the at least one aperture of the mask; and orienting the ribbon ion beam such that longer cross-section dimension of the ribbon beam is perpendicular to the aperture in one plane.
摘要翻译： 公开了制造太阳能电池的技术。 在一个特定的示例性实施例中，技术可以包括在太阳能电池的上游设置掩模，所述掩模包括彼此间隔开的多个细丝以限定至少一个孔; 将所需物质的带状离子束引向太阳能电池以离子注入由掩模的至少一个孔限定的太阳能电池的一部分; 并且使带状离子束定向成使得带状束的较长横截面尺寸垂直于一个平面中的孔。
-
公开(公告)号：US09000446B2
公开(公告)日：2015-04-07
申请号：US12783873
申请日：2010-05-20
IPC分类号： H01L29/15 , H01L21/66 , H01J37/317 , H01J37/20 , H01J37/304 , H01L31/0224 , H01L31/0288 , H01L31/068 , H01L31/18
CPC分类号： H01J37/3171 , H01J37/20 , H01J37/3045 , H01J2237/20235 , H01J2237/31711 , H01L31/022425 , H01L31/0288 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized with a system for processing one or more substrates. The system may comprise an ion source for generating ions of desired species, the ions generated from the ion source being directed toward the one or more substrates along an ion beam path; a substrate support for supporting the one or more substrates; a mask disposed between the ion source and the substrate support, the mask comprising a finger defining one or more apertures through which a portion of the ions traveling along the ion beam path pass; and a first detector for detecting ions, the first detector being fixedly positioned relative to the one or more substrates.
摘要翻译： 本文中公开了一种用于处理衬底的改进技术。 在一个特定的示例性实施例中，该技术可以用用于处理一个或多个基板的系统来实现。 该系统可以包括用于产生所需物质的离子的离子源，从离子源产生的离子沿离子束路指向一个或多个衬底; 用于支撑所述一个或多个基板的基板支撑件; 设置在所述离子源和所述衬底支撑件之间的掩模，所述掩模包括限定一个或多个孔的手指，所述离子沿所述离子束路径行进的一部分穿过所述孔; 以及用于检测离子的第一检测器，所述第一检测器相对于所述一个或多个基板固定地定位。
-
公开(公告)号：US08900982B2
公开(公告)日：2014-12-02
申请号：US12756036
申请日：2010-04-07
IPC分类号： H01L21/266 , H01J37/317
CPC分类号： C23C14/042 , C23C14/48 , H01J37/3171 , H01J2237/08 , H01J2237/303 , H01J2237/31711 , H01L21/266
摘要： Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise one or more first apertures disposed in a first row; and one or more second apertures disposed in a second row, each row extending along a width direction of the mask, wherein the one or more first apertures and the one or more second apertures are non-uniform.
摘要翻译： 本文中公开了一种用于处理衬底的改进技术。 在一个特定的示例性实施例中，可以使用用于处理衬底的掩模来实现该技术。 掩模可以并入基板处理系统中，例如离子注入系统。 掩模可以包括设置在第一排中的一个或多个第一孔; 以及设置在第二排中的一个或多个第二孔，每排沿着所述掩模的宽度方向延伸，其中所述一个或多个第一孔和所述一个或多个第二孔是不均匀的。
-
公开(公告)号：US08461030B2
公开(公告)日：2013-06-11
申请号：US12947078
申请日：2010-11-16
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Deepak A. Ramappa , Russell J. Low , Atul Gupta , Kevin M. Daniels
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Deepak A. Ramappa , Russell J. Low , Atul Gupta , Kevin M. Daniels
CPC分类号： B01J19/081 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0453 , H01J2237/1205 , H01L21/2236 , H01L31/022425 , H01L31/068 , H01L31/08 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
-
9.发明申请METHOD AND SYSTEM FOR IN-SITU MONITORING OF CATHODE ERSOSION AND PREDICTING CATHODE LIFETIME 有权阴离子渗透和预测阴茎生物的现场监测方法与系统公开(公告)号：US20120101742A1
公开(公告)日：2012-04-26
申请号：US12912312
申请日：2010-10-26
IPC分类号： G06F19/00
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/242 , H01J2237/304
摘要： A method of controlling operation of an indirectly-heated cathode (IHC) ion source comprises a step of measuring a rate of loss of cathode weight of the IHC ion source that occurs during operation using a first cathode configuration and under a first set of operation conditions. A maximum weight loss for the first cathode configuration is determined, and a cathode lifetime is calculated based upon the rate of cathode weight loss and the maximum weight loss. A further method comprises receiving a minimum source bias power value for operation of a cathode in a first configuration, measuring a rate of decrease in source bias power for a cathode in the first configuration, and calculating a lifetime of the cathode based upon the minimum source bias power and rate of decrease in source bias power.
摘要翻译： 控制间接加热的阴极（IHC）离子源的操作的方法包括以下步骤：测量在使用第一阴极配置的操作期间和在第一组操作条件下发生的IHC离子源的阴极重量损失率 。 确定第一阴极构造的最大重量损失，并且基于阴极重量损失率和最大重量损失计算阴极寿命。 另一种方法包括：在第一配置中接收用于阴极操作的最小源极偏置功率值，测量第一配置中阴极的源偏置功率的降低率，以及基于最小源计算阴极的寿命 偏置功率和源偏置功率的降低率。
-
公开(公告)号：US20110089342A1
公开(公告)日：2011-04-21
申请号：US12756020
申请日：2010-04-07
CPC分类号： H01L21/266 , H01J37/3171 , H01J2237/024 , H01J2237/045 , H01J2237/31711 , H01L31/18 , Y10T428/2457
摘要： Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be achieved using a mask for processing the substrate. The mask may be incorporated into a substrate processing system such as, for example, an ion implantation system. The mask may comprise a first base; and a plurality of fingers spaced apart from one another to define one or more gaps.
摘要翻译： 本文中公开了一种用于处理衬底的改进技术。 在一个特定的示例性实施例中，可以使用用于处理衬底的掩模来实现该技术。 掩模可以并入基板处理系统中，例如离子注入系统。 掩模可以包括第一基底; 以及彼此间隔开的多个手指以限定一个或多个间隙。
-
-
-
-
-
-
-
-
-
搜索结果
22 条记录 (耗时 0.035 秒)
