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    HIGH POWER LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    HIGH POWER LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF 审中-公开
    大功率发光二极管封装及其制造方法

    公开(公告)号：US20090166664A1

    公开(公告)日：2009-07-02

    申请号：US12327552

    申请日：2008-12-03

    申请人： Jung Kyu Park ,  Kun Yoo Ko ,  Young Sam Park ,  Seung Hwan Chol ,  Il Ku Kim

    发明人： Jung Kyu Park ,  Kun Yoo Ko ,  Young Sam Park ,  Seung Hwan Chol ,  Il Ku Kim

    IPC分类号： H01L33/00 ,  H01L21/24

    CPC分类号： H01L33/486 ,  H01L24/97 ,  H01L33/44 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： There is provided a high power LED package and a method of manufacturing the same. The method includes: forming at least one chip mounting part and at least one through hole in a metal plate; forming an insulating layer of a predetermined thickness on an entire outer surface of the metal plate; forming an electrode part to be electrically connected to a light emitting chip mounted on the chip mounting part; and cutting the metal plate along a trimming line to separate the package. The LED package is free from thermal impact resulting from different thermal coefficients among components, thus ensuring stable heat radiation characteristics in a high temperature atmosphere. Also, the LED package is minimized in optical loss to improve optical characteristics. In addition, the LED package is simplified in a manufacturing and assembly process and thus can be manufactured in mass production at a lower cost.

    摘要翻译： 提供了一种大功率LED封装及其制造方法。 该方法包括：在金属板中形成至少一个芯片安装部分和至少一个通孔; 在金属板的整个外表面上形成预定厚度的绝缘层; 形成电连接到安装在芯片安装部上的发光芯片的电极部; 并沿着修剪线切割金属板以分离包装。 LED封装不受组件之间不同热系数的热冲击，从而确保高温环境中的稳定的散热特性。 此外，LED封装在光损耗方面被最小化以改善光学特性。 此外，LED封装在制造和组装过程中被简化，因此可以以较低的成本批量生产。

    Nitride semiconductor light emitting device
    6.
    发明授权
    Nitride semiconductor light emitting device 有权
    氮化物半导体发光器件

    公开(公告)号：US07777245B2

    公开(公告)日：2010-08-17

    申请号：US11499727

    申请日：2006-08-07

    申请人： Seok Min Hwang ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

    发明人： Seok Min Hwang ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/20

    摘要： The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

    摘要翻译： 本发明涉及高输出氮化物发光器件。 发光器件包括依次沉积在衬底上的第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。 发光器件还包括形成在氮化物半导体发光器件的不同上表面部分中的第一和第二绝缘层，以及分别形成在第一绝缘层和第二绝缘层上的第一和第二接合焊盘。 发光器件还包括从第一和第二焊盘延伸并分别耦合到第一和第二导电半导体层的第一和第二延伸电极。 根据本发明的电极装置防止接合焊盘和发光器件之间的直接耦合，从而允许仅使用延伸电极实现更均匀的电流扩展的对称结构。

    Flip chip type nitride semiconductor light emitting device
    7.
    发明授权
    Flip chip type nitride semiconductor light emitting device 有权
    倒装芯片型氮化物半导体发光器件

    公开(公告)号：US07297988B2

    公开(公告)日：2007-11-20

    申请号：US11319343

    申请日：2005-12-28

    申请人： Seung Wan Chae ,  Suk Kil Yoon ,  Kun Yoo Ko ,  Hyun Wook Shim ,  Bong Il Yi

    发明人： Seung Wan Chae ,  Suk Kil Yoon ,  Kun Yoo Ko ,  Hyun Wook Shim ,  Bong Il Yi

    IPC分类号： H01L29/22 ,  H01L33/00

    CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42

    摘要： The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.

    摘要翻译： 本发明涉及具有p型和n型氮化物半导体层的倒装芯片型氮化物半导体发光器件及其间的有源层。 本发明还具有形成在p型氮化物半导体层上的欧姆接触层，形成在欧姆接触层上的透光性导电氧化物层和形成在透光性导电氧化物层上的高反射金属层。

    LED light source module and display apparatus including the same
    9.
    发明授权
    LED light source module and display apparatus including the same 有权
    LED光源模块和包括其的显示装置

    公开(公告)号：US08602626B2

    公开(公告)日：2013-12-10

    申请号：US13328564

    申请日：2011-12-16

    申请人： Won Joon Lee ,  Kun Yoo Ko ,  Jin Mo Kim ,  Seung Hwan Choi

    发明人： Won Joon Lee ,  Kun Yoo Ko ,  Jin Mo Kim ,  Seung Hwan Choi

    IPC分类号： F21V8/00

    CPC分类号： G02B6/0073 ,  G02B6/0068 ,  G02B6/0083

    摘要： An LED light source module is provided. The LED light source module includes a circuit board having a first circuit pattern and a second circuit pattern; and a plurality of rectangular LED packages mounted on the circuit board so as to be connected to each of the first and second circuit patterns, and arranged in a row such that each of the LED packages is tilted in a predetermined direction, while long sides of adjacent LED packages facing each other. In addition, a display device having the LED light source module is provided.

    摘要翻译： 提供LED光源模块。 LED光源模块包括具有第一电路图案和第二电路图案的电路板; 以及安装在所述电路板上的多个矩形LED封装件，以连接到所述第一和第二电路图案中的每一个，并且被布置成使得每个所述LED封装件沿预定方向倾斜， 相邻的LED封装彼此面对。 另外，提供具有LED光源模块的显示装置。

    Nitride based semiconductor light emitting diode
    10.
    发明授权
    Nitride based semiconductor light emitting diode 有权
    氮化物半导体发光二极管

    公开(公告)号：US08168995B2

    公开(公告)日：2012-05-01

    申请号：US11543231

    申请日：2006-10-05

    申请人： Kun Yoo Ko ,  Seok Min Hwang ,  Hyung Jin Park

    发明人： Kun Yoo Ko ,  Seok Min Hwang ,  Hyung Jin Park

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32 ,  H01L2224/05552

    摘要： A nitride based semiconductor LED is provided. In the nitride based semiconductor LED, an n-type nitride semiconductor layer is formed on a substrate. The n-type nitride semiconductor layer has the top surface divided into a first region and a second region with a finger structure, so that the first region and the second region are meshed with each other. An active layer is formed on the second region of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer is formed on the active layer, and a reflective electrode is formed on the p-type nitride semiconductor layer. A p-electrode is formed on the reflective electrode, and an n-electrode is formed on the first region of the n-type nitride semiconductor layer. A plurality of n-type electrode pads are formed on the n-electrode. At least one of the n-type electrode pads are arranged adjacent to different sides of the n-electrode.

    摘要翻译： 提供了一种基于氮化物的半导体LED。 在氮化物系半导体LED中，在基板上形成n型氮化物半导体层。 n型氮化物半导体层的顶表面被划分为具有手指结构的第一区域和第二区域，使得第一区域和第二区域彼此啮合。 在n型氮化物半导体层的第二区域上形成有源层。 在有源层上形成p型氮化物半导体层，在p型氮化物半导体层上形成反射电极。 在反射电极上形成p电极，在n型氮化物半导体层的第一区域上形成n电极。 在n电极上形成多个n型电极焊盘。 n型电极焊盘中的至少一个被布置成与n电极的不同侧相邻。