公开(公告)号：US07297988B2

公开(公告)日：2007-11-20

申请号：US11319343

申请日：2005-12-28

申请人： Seung Wan Chae ,  Suk Kil Yoon ,  Kun Yoo Ko ,  Hyun Wook Shim ,  Bong Il Yi

发明人： Seung Wan Chae ,  Suk Kil Yoon ,  Kun Yoo Ko ,  Hyun Wook Shim ,  Bong Il Yi

IPC分类号： H01L29/22 ,  H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42

摘要： The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.

摘要翻译： 本发明涉及具有p型和n型氮化物半导体层的倒装芯片型氮化物半导体发光器件及其间的有源层。 本发明还具有形成在p型氮化物半导体层上的欧姆接触层，形成在欧姆接触层上的透光性导电氧化物层和形成在透光性导电氧化物层上的高反射金属层。

公开(公告)号：US08110847B2

公开(公告)日：2012-02-07

申请号：US12003276

申请日：2007-12-21

申请人： Kun Yoo Ko ,  Je Won Kim ,  Dong Woo Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Seung Wan Chae

发明人： Kun Yoo Ko ,  Je Won Kim ,  Dong Woo Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Seung Wan Chae

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/42

摘要： Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.

摘要翻译： 提供一种包含基板的氮化物系半导体LED， 形成在所述基板上的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层的预定区域上的有源层; 形成在所述有源层上的第二导电型氮化物半导体层; 形成在所述第二导电型氮化物半导体层上的透明电极; 形成在所述透明电极上的第二导电型电极焊盘; 多个第二导电型电极，从第二导电型电极焊盘沿一个方向延伸以形成一条线; 第一导电型电极焊盘，形成在第一导电型氮化物半导体层上，其中没有形成有源层，以便位于与第二导电型电极焊盘相同的一侧; 以及从第一导电型电极焊盘沿一个方向延伸以形成一行的多个第一导电型电极。

公开(公告)号：US20080210972A1

公开(公告)日：2008-09-04

申请号：US12003276

申请日：2007-12-21

申请人： Kun Yoo Ko ,  Je Won Kim ,  Dong Woo Kim ,  Hyng Jin Park ,  Seok Min Hwang ,  Seung Wan Chae

发明人： Kun Yoo Ko ,  Je Won Kim ,  Dong Woo Kim ,  Hyng Jin Park ,  Seok Min Hwang ,  Seung Wan Chae

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/42

摘要： Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.

摘要翻译： 提供一种包含基板的氮化物系半导体LED， 形成在所述基板上的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层的预定区域上的有源层; 形成在所述有源层上的第二导电型氮化物半导体层; 形成在所述第二导电型氮化物半导体层上的透明电极; 形成在所述透明电极上的第二导电型电极焊盘; 多个第二导电型电极，从第二导电型电极焊盘沿一个方向延伸以形成一条线; 第一导电型电极焊盘，形成在第一导电型氮化物半导体层上，其中没有形成有源层，以便位于与第二导电型电极焊盘相同的一侧; 以及从第一导电型电极焊盘沿一个方向延伸以形成一行的多个第一导电型电极。

公开(公告)号：US07087985B2

公开(公告)日：2006-08-08

申请号：US10853236

申请日：2004-05-26

申请人： Young Ho Park ,  Hyo Kyoung Cho ,  Seung Jin Yoo ,  Kun Yoo Ko

发明人： Young Ho Park ,  Hyo Kyoung Cho ,  Seung Jin Yoo ,  Kun Yoo Ko

IPC分类号： H01L23/495

CPC分类号： H01L33/382 ,  H01L24/45 ,  H01L2224/45 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2224/45099 ,  H01L2224/43 ,  H01L2924/01006

摘要： In a nitride semiconductor LED having a light emitting structure, an n-doped semiconductor layer has a first region and a second region surrounding the first region, an active layer is formed on the second region of the n-doped semiconductor layer, and a p-doped nitride semiconductor layer is formed on the active layer. A p-electrode is formed on the p-doped semiconductor layer. An n-electrode is formed on the first region of the n-doped nitride semiconductor layer.

摘要翻译： 在具有发光结构的氮化物半导体LED中，n掺杂半导体层具有围绕第一区域的第一区域和第二区域，在n掺杂半导体层的第二区域上形成有源层，p 在有源层上形成掺杂氮化物半导体层。 在p掺杂半导体层上形成p电极。 在n掺杂氮化物半导体层的第一区域上形成n电极。

公开(公告)号：US07777245B2

公开(公告)日：2010-08-17

申请号：US11499727

申请日：2006-08-07

申请人： Seok Min Hwang ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

发明人： Seok Min Hwang ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

摘要翻译： 本发明涉及高输出氮化物发光器件。 发光器件包括依次沉积在衬底上的第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。 发光器件还包括形成在氮化物半导体发光器件的不同上表面部分中的第一和第二绝缘层，以及分别形成在第一绝缘层和第二绝缘层上的第一和第二接合焊盘。 发光器件还包括从第一和第二焊盘延伸并分别耦合到第一和第二导电半导体层的第一和第二延伸电极。 根据本发明的电极装置防止接合焊盘和发光器件之间的直接耦合，从而允许仅使用延伸电极实现更均匀的电流扩展的对称结构。

公开(公告)号：US20090050923A1

公开(公告)日：2009-02-26

申请号：US12192175

申请日：2008-08-15

申请人： Seong Ah Joo ,  Jung Kyu Park ,  Kun Yoo Ko ,  Young June Jeong ,  Seung Hwan Choi

发明人： Seong Ah Joo ,  Jung Kyu Park ,  Kun Yoo Ko ,  Young June Jeong ,  Seung Hwan Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  H01L2224/48091 ,  H01L2924/01322 ,  H05K1/09 ,  H05K3/24 ,  H05K2201/10106 ,  H01L2924/00014

摘要： Provided is an LED package including a printed circuit board (PCB); a conductive structure that is formed on the PCB and is composed of any one selected from a silicon structure and an aluminum structure; and an LED chip that is mounted on the PCB and is electrically connected to the PCB through the conductive structure.

摘要翻译： 提供了一种包括印刷电路板（PCB）的LED封装; 导电结构，其形成在PCB上并且由选自硅结构和铝结构中的任何一种构成; 以及安装在PCB上并通过导电结构电连接到PCB的LED芯片。

公开(公告)号：US07160744B2

公开(公告)日：2007-01-09

申请号：US10953815

申请日：2004-09-30

申请人： Young Ho Park ,  Hun Joo Hahm ,  Kun Yoo Ko ,  Hyo Kyong Cho

发明人： Young Ho Park ,  Hun Joo Hahm ,  Kun Yoo Ko ,  Hyo Kyong Cho

IPC分类号： H01L21/00

CPC分类号： H01L33/22 ,  H01L21/02378 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  Y10S438/964

摘要： The present invention relates to a fabrication method of LEDs incorporating a step of surface-treating a substrate by a laser and an LED fabricated by such a fabrication method. The present invention can use a laser in order to implement finer surface treatment to an LED substrate over the prior art. As a result, the invention can improve the light extraction efficiency of an LED while protecting the substrate from chronic problems of the prior art such as stress or defects induced from chemical etching and/or physical polishing.

摘要翻译： 本发明涉及一种LED的制造方法，其包括通过激光对基板进行表面处理的步骤以及通过这种制造方法制造的LED。 与现有技术相比，本发明可以使用激光器来实现对LED基板的更精细的表面处理。 结果，本发明可以提高LED的光提取效率，同时保护衬底免受现有技术的慢性问题，例如由化学蚀刻和/或物理抛光引起的应力或缺陷。

公开(公告)号：US08602626B2

公开(公告)日：2013-12-10

申请号：US13328564

申请日：2011-12-16

申请人： Won Joon Lee ,  Kun Yoo Ko ,  Jin Mo Kim ,  Seung Hwan Choi

发明人： Won Joon Lee ,  Kun Yoo Ko ,  Jin Mo Kim ,  Seung Hwan Choi

IPC分类号： F21V8/00

CPC分类号： G02B6/0073 ,  G02B6/0068 ,  G02B6/0083

摘要： An LED light source module is provided. The LED light source module includes a circuit board having a first circuit pattern and a second circuit pattern; and a plurality of rectangular LED packages mounted on the circuit board so as to be connected to each of the first and second circuit patterns, and arranged in a row such that each of the LED packages is tilted in a predetermined direction, while long sides of adjacent LED packages facing each other. In addition, a display device having the LED light source module is provided.

摘要翻译： 提供LED光源模块。 LED光源模块包括具有第一电路图案和第二电路图案的电路板; 以及安装在所述电路板上的多个矩形LED封装件，以连接到所述第一和第二电路图案中的每一个，并且被布置成使得每个所述LED封装件沿预定方向倾斜， 相邻的LED封装彼此面对。 另外，提供具有LED光源模块的显示装置。

公开(公告)号：US08168995B2

公开(公告)日：2012-05-01

申请号：US11543231

申请日：2006-10-05

申请人： Kun Yoo Ko ,  Seok Min Hwang ,  Hyung Jin Park

发明人： Kun Yoo Ko ,  Seok Min Hwang ,  Hyung Jin Park

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32 ,  H01L2224/05552

摘要： A nitride based semiconductor LED is provided. In the nitride based semiconductor LED, an n-type nitride semiconductor layer is formed on a substrate. The n-type nitride semiconductor layer has the top surface divided into a first region and a second region with a finger structure, so that the first region and the second region are meshed with each other. An active layer is formed on the second region of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer is formed on the active layer, and a reflective electrode is formed on the p-type nitride semiconductor layer. A p-electrode is formed on the reflective electrode, and an n-electrode is formed on the first region of the n-type nitride semiconductor layer. A plurality of n-type electrode pads are formed on the n-electrode. At least one of the n-type electrode pads are arranged adjacent to different sides of the n-electrode.

摘要翻译： 提供了一种基于氮化物的半导体LED。 在氮化物系半导体LED中，在基板上形成n型氮化物半导体层。 n型氮化物半导体层的顶表面被划分为具有手指结构的第一区域和第二区域，使得第一区域和第二区域彼此啮合。 在n型氮化物半导体层的第二区域上形成有源层。 在有源层上形成p型氮化物半导体层，在p型氮化物半导体层上形成反射电极。 在反射电极上形成p电极，在n型氮化物半导体层的第一区域上形成n电极。 在n电极上形成多个n型电极焊盘。 n型电极焊盘中的至少一个被布置成与n电极的不同侧相邻。

公开(公告)号：US20100276725A1

公开(公告)日：2010-11-04

申请号：US12838031

申请日：2010-07-16

申请人： Seok Min HWANG ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

发明人： Seok Min HWANG ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

IPC分类号： H01L33/36

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

摘要翻译： 本发明涉及高输出氮化物发光器件。 发光器件包括依次沉积在衬底上的第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。 发光器件还包括形成在氮化物半导体发光器件的不同上表面部分中的第一和第二绝缘层，以及分别形成在第一绝缘层和第二绝缘层上的第一和第二接合焊盘。 发光器件还包括从第一和第二焊盘延伸并分别耦合到第一和第二导电半导体层的第一和第二延伸电极。 根据本发明的电极装置防止接合焊盘和发光器件之间的直接耦合，从而允许仅使用延伸电极实现更均匀的电流扩展的对称结构。