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49 条记录 (耗时 0.022 秒)

    Use of infrared radiation and an ellipsoidal reflection mirror
    1.
    发明授权
    Use of infrared radiation and an ellipsoidal reflection mirror 失效
    使用红外辐射和椭圆反射镜

    公开(公告)号：US4806321A

    公开(公告)日：1989-02-21

    申请号：US759098

    申请日：1985-07-25

    申请人： Junichi Nishizawa ,  Hitoshi Abe ,  Soubei Suzuki

    发明人： Junichi Nishizawa ,  Hitoshi Abe ,  Soubei Suzuki

    IPC分类号： H01L21/268 ,  C23C16/48 ,  C30B25/10 ,  C30B25/16 ,  H01L21/205 ,  C30B35/00 ,  C30B23/02 ,  C30B25/14

    CPC分类号： C30B25/16 ,  C30B25/105 ,  H01L21/02395 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02661

    摘要： In a semiconductor crystal growth apparatus, a growth vessel enclosing a substrate is evacuated to an ultrahigh vacuum, and gas molecules containing a component element of a semiconductor which should grow on the substrate is introduced according to a predetermined time sequence into the growth vessel from an external gas source. Infrared radiation from an infrared radiation emitting lamp associated with the growth vessel and controlled by a temperature control unit is directed toward and onto the substrate whose temperature is to be maintained at a predetermined setting. Crystal growth of one molecular layer after another can be achieved by the apparatus with dimensional accuracy of the thickness of a single molecular layer.

    摘要翻译： 在半导体晶体生长装置中，将包围衬底的生长容器抽真空至超高真空，并且将含有应在衬底上生长的半导体组分元素的气体分子根据预定时间序列从生长容器 外部气源。 来自与生长容器相关并由温度控制单元控制的红外辐射发射灯的红外辐射被引导到衬底上并将其温度保持在预定的设置。 另一个分子层的晶体生长可以通过具有单分子层厚度的尺寸精度的装置来实现。

    Growth of doped semiconductor monolayers
    2.
    发明授权
    Growth of doped semiconductor monolayers 失效
    掺杂半导体单层的生长

    公开(公告)号：US5693139A

    公开(公告)日：1997-12-02

    申请号：US77119

    申请日：1993-06-15

    申请人： Junichi Nishizawa ,  Hitoshi Abe ,  Soubei Suzuki

    发明人： Junichi Nishizawa ,  Hitoshi Abe ,  Soubei Suzuki

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  C30B25/14 ,  H01L21/20 ,  H01L21/205

    CPC分类号： C23C16/45525 ,  C23C16/455 ,  C23C16/45531 ,  C23C16/45536 ,  C30B25/02 ,  C30B25/14 ,  C30B29/42 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

    摘要： A cycle of alternately or cyclically introducing external gases containing molecules of component elements of a compound semiconductor to be formed on a substrate is repeated while appropriately controlling the pressure, substrate temperature and gas introduction rate in a crystal growth vessel, so that a monocrystal which is dimensionally as precise as a single monolayer can grow on the substrate by making use of chemical reactions on the heated substrate surface. Doped molecular layer epitaxy of a compound semiconductor comprising individual steps of introducing and evacuating a first source gas, introducing and evacuating a second source gas, and introducing and evacuating an impurity gas which contains an impurity element. The doped impurity concentration varies almost linearly with the pressure during doping in a wide range.

    摘要翻译： 在适当地控制晶体生长容器中的压力，衬底温度和气体导入速率的同时，重复交替地或周期性地引入含有要形成在衬底上的化合物半导体的组分元素分子的外部气体的循环，从而使单晶 通过利用加热的基底表面上的化学反应，在单个单层上的尺寸精确地可以在基底上生长。 包括化合物半导体的掺杂分子层外延，其包括引入和排空第一源气体，引入和抽空第二源气体，以及引入和排出含有杂质元素的杂质气体的各个步骤。 掺杂杂质浓度在宽范围内掺杂期间的压力几乎线性变化。

    Apparatus for forming semiconductor crystal
    3.
    发明授权
    Apparatus for forming semiconductor crystal 失效
    半导体晶体形成装置

    公开(公告)号：US06334901B1

    公开(公告)日：2002-01-01

    申请号：US08812069

    申请日：1995-06-07

    申请人： Junichi Nishizawa ,  Hitoshi Abe

    发明人： Junichi Nishizawa ,  Hitoshi Abe

    IPC分类号： G23C1622

    CPC分类号： C30B25/105

    摘要： In a semiconductor crystal growth apparatus, a substrate is heated in a growth vessel evacuated to a ultrahigh vacuum, and gas containing component elements of a semiconductor which should grow on the substrate are introduced into the growth vessel from external gas sources. Radiation having a specific wavelength is directed from an external irradiation source toward and onto the substrate.

    摘要翻译： 在半导体晶体生长装置中，将衬底在抽真空至超高真空的生长容器中加热，并且将含有在衬底上生长的半导体的组分元素的气体从外部气体源引入生长容器。 具有特定波长的辐射从外部照射源向衬底引导。

    Semiconductor crystal growth method
    4.
    发明授权
    Semiconductor crystal growth method 失效
    半导体晶体生长方法

    公开(公告)号：US5443033A

    公开(公告)日：1995-08-22

    申请号：US212551

    申请日：1994-03-11

    申请人： Junichi Nishizawa ,  Hitoshi Abe

    发明人： Junichi Nishizawa ,  Hitoshi Abe

    IPC分类号： C23C16/52 ,  C30B25/02 ,  C30B25/14

    CPC分类号： C23C16/52 ,  C30B25/02 ,  C30B29/68

    摘要： A substrate is heated in a crystal growth vessel evacuated to a ultrahigh vacuum, and gases containing component elements of a crystal to be grown on the substrate are introduced into the vessel under predetermined conditions to cause successive epitaxial growth of single molecular layers, the number of growth cycles being automatically controlled. A mass analyzer is disposed opposite to the substrate in the vessel so that the progress of crystal growth can be incessantly traced and evaluated for each of the molecular layers. An etchant gas introduction nozzle extends into the vessel to make etching treatment of the surface of the substrate in the evacuated vessel prior to the crystal growth.

    摘要翻译： 将衬底在抽成超高真空的晶体生长容器中加热，并且将含有要在衬底上生长的晶体的组分元素的气体在预定条件下引入容器中以引起单分子层的连续外延生长， 生长周期被自动控制。 质量分析器与容器中的衬底相对设置，从而可以不断地追踪和评估每个分子层的晶体生长过程。 蚀刻剂气体引入喷嘴延伸到容器中，以在晶体生长之前对真空容器中的衬底的表面进行蚀刻处理。

    Semiconductor crystal growth apparatus
    5.
    发明授权
    Semiconductor crystal growth apparatus 失效
    半导体晶体生长装置

    公开(公告)号：US06464793B1

    公开(公告)日：2002-10-15

    申请号：US08396589

    申请日：1995-03-01

    申请人： Junichi Nishizawa ,  Hitoshi Abe

    发明人： Junichi Nishizawa ,  Hitoshi Abe

    IPC分类号： C23C1600

    CPC分类号： C23C16/52 ,  C30B25/02 ,  C30B29/68

    摘要： A substrate is heated in a crystal growth vessel evacuated to a ultrahigh vacuum, and gases containing component elements of a crystal to be grown on the substrate are introduced into the vessel under predetermined conditions to cause successive epitaxial growth of single molecular layers, the number of growth cycles being automatically controlled. A mass analyzer is disposed opposite to the substrate in the vessel so that the progress of crystal growth can be incessantly traced and evaluated for each of the molecular layers. An etchant gas introduction nozzle extends into the vessel to make etching treatment of the surface of the substrate in the evacuated vessel prior to the crystal growth.

    摘要翻译： 将衬底在抽成超高真空的晶体生长容器中加热，并且将含有要在衬底上生长的晶体的组分元素的气体在预定条件下引入容器中以引起单分子层的连续外延生长， 生长周期被自动控制。 质量分析器与容器中的衬底相对设置，从而可以不断地追踪和评估每个分子层的晶体生长过程。 蚀刻剂气体引入喷嘴延伸到容器中，以在晶体生长之前对真空容器中的衬底的表面进行蚀刻处理。

    Process for growing GaAs monocrystal film
    7.
    发明授权
    Process for growing GaAs monocrystal film 失效
    生长GaAs单晶膜的工艺

    公开(公告)号：US5250148A

    公开(公告)日：1993-10-05

    申请号：US790118

    申请日：1991-11-12

    申请人： Junichi Nishizawa ,  Hitoshi Abe

    发明人： Junichi Nishizawa ,  Hitoshi Abe

    IPC分类号： C30B25/02 ,  C30B25/14

    CPC分类号： C30B25/02 ,  C30B29/42 ,  C30B29/68

    摘要： A GaAs monocrystal film was grown by use of a process which comprises introducing a gaseous compound containing a component element desired to be grown into a vacuum tank, and submitting the compound to reaction on a base to thereby grow a semiconductor crystal each one molecular layer.Triethylgallium (TEG) and arsine (AsH.sub.3) are used as the gaseous compound. One gas is introduced into the vaccum tank and then discharged after the passage of a predetermined time, and the other gas is introduced thereinto and then discharged after the passage of a predetermined time whereby a crystal for one molecular layer grows.By use of TEG as a gallium source, reaction progresses even when a temperature of the base is below 300.degree. C., and a GaAs monocrystal film which is extremely less in lattice failure and impurities was obtained.

    摘要翻译： 通过使用包含将期望生长的成分元素的气态化合物引入真空槽中的方法生长GaAs单晶膜，并使化合物在基底上反应，从而每个分子层生长半导体晶体。 三乙基镓（TEG）和胂（AsH 3）用作气态化合物。 将一种气体引入真空罐中，然后在经过预定时间后排出，然后将另一种气体引入其中，然后在经过预定时间后排出，由此一个分子层的晶体生长。 通过使用TEG作为镓源，即使在碱的温度低于300℃的情况下也能够进行反应，得到晶格不良和杂质极少的GaAs单晶膜。

    High frequency static induction transistor having high output
    8.
    发明授权
    High frequency static induction transistor having high output 失效
    高频静电感应晶体管具有高输出

    公开(公告)号：US5663582A

    公开(公告)日：1997-09-02

    申请号：US651851

    申请日：1996-05-21

    申请人： Junichi Nishizawa ,  Kaoru Motoya ,  Akira Ito

    发明人： Junichi Nishizawa ,  Kaoru Motoya ,  Akira Ito

    IPC分类号： H01L21/335 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/772 ,  H01L29/74 ,  H01L31/111

    CPC分类号： H01L29/66416 ,  H01L29/0619 ,  H01L29/41741 ,  H01L29/42316 ,  H01L29/7722

    摘要： A recess-gate type static induction transistor having a high breakdown voltage is provided, which includes an n-type channel region provided over an n.sup.+ -type drain region, p.sup.+ -type elongated gate regions provided in grooves of the channel region, n.sup.+ -type elongated regions formed on the channel region so as to be arranged in parallel with the gate regions, each of which is disposed between the gate regions, and a p.sup.+ -type guard ring region provided in the channel region and arranged to surround the gate regions. The elongated gate regions are coupled to the guard ring region at both edges. In addition, the outer-most elongated gate regions are coupled to the guard ring region along the longitudinal direction, respectively, thereby increasing the breakdown voltage of the device. Further, gate and source contact pads are provided only on the guard ring region so as to be opposed, thereby reducing unwanted parasitic capacitances between gate and drain regions and between gate and source regions.

    摘要翻译： 提供具有高击穿电压的凹槽式静电感应晶体管，其包括设置在n +型漏极区上的n型沟道区，设置在沟道区的沟槽中的p +型细长栅极区，n +型 形成在沟道区上的细长区域，以与栅极区域平行设置，每个栅极区域设置在栅极区域之间，而p +型保护环区域设置在沟道区域中并被布置成围绕栅极区域。 细长的栅极区域在两个边缘处耦合到保护环区域。 此外，最外延长的栅极区域分别沿着纵向方向耦合到保护环区域，从而增加了器件的击穿电压。 此外，栅极和源极接触焊盘仅在保护环区域上提供以相对，从而减少栅极和漏极区域之间以及栅极和源极区域之间的不必要的寄生电容。