公开(公告)号：US4806321A

公开(公告)日：1989-02-21

申请号：US759098

申请日：1985-07-25

申请人： Junichi Nishizawa ,  Hitoshi Abe ,  Soubei Suzuki

发明人： Junichi Nishizawa ,  Hitoshi Abe ,  Soubei Suzuki

IPC分类号： H01L21/268 ,  C23C16/48 ,  C30B25/10 ,  C30B25/16 ,  H01L21/205 ,  C30B35/00 ,  C30B23/02 ,  C30B25/14

CPC分类号： C30B25/16 ,  C30B25/105 ,  H01L21/02395 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02661

摘要： In a semiconductor crystal growth apparatus, a growth vessel enclosing a substrate is evacuated to an ultrahigh vacuum, and gas molecules containing a component element of a semiconductor which should grow on the substrate is introduced according to a predetermined time sequence into the growth vessel from an external gas source. Infrared radiation from an infrared radiation emitting lamp associated with the growth vessel and controlled by a temperature control unit is directed toward and onto the substrate whose temperature is to be maintained at a predetermined setting. Crystal growth of one molecular layer after another can be achieved by the apparatus with dimensional accuracy of the thickness of a single molecular layer.

摘要翻译： 在半导体晶体生长装置中，将包围衬底的生长容器抽真空至超高真空，并且将含有应在衬底上生长的半导体组分元素的气体分子根据预定时间序列从生长容器 外部气源。 来自与生长容器相关并由温度控制单元控制的红外辐射发射灯的红外辐射被引导到衬底上并将其温度保持在预定的设置。 另一个分子层的晶体生长可以通过具有单分子层厚度的尺寸精度的装置来实现。

公开(公告)号：US06464793B1

公开(公告)日：2002-10-15

申请号：US08396589

申请日：1995-03-01

申请人： Junichi Nishizawa ,  Hitoshi Abe

发明人： Junichi Nishizawa ,  Hitoshi Abe

IPC分类号： C23C1600

CPC分类号： C23C16/52 ,  C30B25/02 ,  C30B29/68

摘要： A substrate is heated in a crystal growth vessel evacuated to a ultrahigh vacuum, and gases containing component elements of a crystal to be grown on the substrate are introduced into the vessel under predetermined conditions to cause successive epitaxial growth of single molecular layers, the number of growth cycles being automatically controlled. A mass analyzer is disposed opposite to the substrate in the vessel so that the progress of crystal growth can be incessantly traced and evaluated for each of the molecular layers. An etchant gas introduction nozzle extends into the vessel to make etching treatment of the surface of the substrate in the evacuated vessel prior to the crystal growth.

摘要翻译： 将衬底在抽成超高真空的晶体生长容器中加热，并且将含有要在衬底上生长的晶体的组分元素的气体在预定条件下引入容器中以引起单分子层的连续外延生长， 生长周期被自动控制。 质量分析器与容器中的衬底相对设置，从而可以不断地追踪和评估每个分子层的晶体生长过程。 蚀刻剂气体引入喷嘴延伸到容器中，以在晶体生长之前对真空容器中的衬底的表面进行蚀刻处理。

公开(公告)号：US5294286A

公开(公告)日：1994-03-15

申请号：US3308

申请日：1993-01-12

申请人： Junichi Nishizawa ,  Hitoshi Abe ,  Soubei Suzuki

发明人： Junichi Nishizawa ,  Hitoshi Abe ,  Soubei Suzuki

IPC分类号： C23C16/24 ,  C23C16/44 ,  C23C16/455 ,  C23C26/00 ,  C30B25/02 ,  C30B25/14

CPC分类号： C23C16/45525 ,  C23C16/24 ,  C23C16/45531 ,  C23C16/45536 ,  C23C26/00 ,  C30B25/02 ,  C30B29/68 ,  Y10S438/925

摘要： The thickness of a thin film of an element semiconductor may be determined by counting the number of cycles of gaseous component introductions within a crystal growth vessel. Each cycle permits at most one monolayer of growth since the pressure in the vessel during gaseous component introduction is maintained under a saturation condition. The temperature to which a substrate in the vessel is heated is that for which epitaxial growth results.

摘要翻译： 元件半导体薄膜的厚度可以通过计数在晶体生长容器内的气态组分引入的循环次数来确定。 每个循环允许至多一个单层生长，因为在气体组分引入期间容器中的压力保持在饱和条件下。 加热容器中的基底的温度是导致外延生长的温度。

公开(公告)号：US5250148A

公开(公告)日：1993-10-05

申请号：US790118

申请日：1991-11-12

申请人： Junichi Nishizawa ,  Hitoshi Abe

发明人： Junichi Nishizawa ,  Hitoshi Abe

IPC分类号： C30B25/02 ,  C30B25/14

CPC分类号： C30B25/02 ,  C30B29/42 ,  C30B29/68

摘要： A GaAs monocrystal film was grown by use of a process which comprises introducing a gaseous compound containing a component element desired to be grown into a vacuum tank, and submitting the compound to reaction on a base to thereby grow a semiconductor crystal each one molecular layer.Triethylgallium (TEG) and arsine (AsH.sub.3) are used as the gaseous compound. One gas is introduced into the vaccum tank and then discharged after the passage of a predetermined time, and the other gas is introduced thereinto and then discharged after the passage of a predetermined time whereby a crystal for one molecular layer grows.By use of TEG as a gallium source, reaction progresses even when a temperature of the base is below 300.degree. C., and a GaAs monocrystal film which is extremely less in lattice failure and impurities was obtained.

摘要翻译： 通过使用包含将期望生长的成分元素的气态化合物引入真空槽中的方法生长GaAs单晶膜，并使化合物在基底上反应，从而每个分子层生长半导体晶体。 三乙基镓（TEG）和胂（AsH 3）用作气态化合物。 将一种气体引入真空罐中，然后在经过预定时间后排出，然后将另一种气体引入其中，然后在经过预定时间后排出，由此一个分子层的晶体生长。 通过使用TEG作为镓源，即使在碱的温度低于300℃的情况下也能够进行反应，得到晶格不良和杂质极少的GaAs单晶膜。

公开(公告)号：US5693139A

公开(公告)日：1997-12-02

申请号：US77119

申请日：1993-06-15

申请人： Junichi Nishizawa ,  Hitoshi Abe ,  Soubei Suzuki

发明人： Junichi Nishizawa ,  Hitoshi Abe ,  Soubei Suzuki

IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  C30B25/14 ,  H01L21/20 ,  H01L21/205

CPC分类号： C23C16/45525 ,  C23C16/455 ,  C23C16/45531 ,  C23C16/45536 ,  C30B25/02 ,  C30B25/14 ,  C30B29/42 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： A cycle of alternately or cyclically introducing external gases containing molecules of component elements of a compound semiconductor to be formed on a substrate is repeated while appropriately controlling the pressure, substrate temperature and gas introduction rate in a crystal growth vessel, so that a monocrystal which is dimensionally as precise as a single monolayer can grow on the substrate by making use of chemical reactions on the heated substrate surface. Doped molecular layer epitaxy of a compound semiconductor comprising individual steps of introducing and evacuating a first source gas, introducing and evacuating a second source gas, and introducing and evacuating an impurity gas which contains an impurity element. The doped impurity concentration varies almost linearly with the pressure during doping in a wide range.

摘要翻译： 在适当地控制晶体生长容器中的压力，衬底温度和气体导入速率的同时，重复交替地或周期性地引入含有要形成在衬底上的化合物半导体的组分元素分子的外部气体的循环，从而使单晶 通过利用加热的基底表面上的化学反应，在单个单层上的尺寸精确地可以在基底上生长。 包括化合物半导体的掺杂分子层外延，其包括引入和排空第一源气体，引入和抽空第二源气体，以及引入和排出含有杂质元素的杂质气体的各个步骤。 掺杂杂质浓度在宽范围内掺杂期间的压力几乎线性变化。

公开(公告)号：US06334901B1

公开(公告)日：2002-01-01

申请号：US08812069

申请日：1995-06-07

申请人： Junichi Nishizawa ,  Hitoshi Abe

发明人： Junichi Nishizawa ,  Hitoshi Abe

IPC分类号： G23C1622

CPC分类号： C30B25/105

摘要： In a semiconductor crystal growth apparatus, a substrate is heated in a growth vessel evacuated to a ultrahigh vacuum, and gas containing component elements of a semiconductor which should grow on the substrate are introduced into the growth vessel from external gas sources. Radiation having a specific wavelength is directed from an external irradiation source toward and onto the substrate.

摘要翻译： 在半导体晶体生长装置中，将衬底在抽真空至超高真空的生长容器中加热，并且将含有在衬底上生长的半导体的组分元素的气体从外部气体源引入生长容器。 具有特定波长的辐射从外部照射源向衬底引导。

公开(公告)号：US5443033A

公开(公告)日：1995-08-22

申请号：US212551

申请日：1994-03-11

申请人： Junichi Nishizawa ,  Hitoshi Abe

发明人： Junichi Nishizawa ,  Hitoshi Abe

IPC分类号： C23C16/52 ,  C30B25/02 ,  C30B25/14

CPC分类号： C23C16/52 ,  C30B25/02 ,  C30B29/68

摘要： A substrate is heated in a crystal growth vessel evacuated to a ultrahigh vacuum, and gases containing component elements of a crystal to be grown on the substrate are introduced into the vessel under predetermined conditions to cause successive epitaxial growth of single molecular layers, the number of growth cycles being automatically controlled. A mass analyzer is disposed opposite to the substrate in the vessel so that the progress of crystal growth can be incessantly traced and evaluated for each of the molecular layers. An etchant gas introduction nozzle extends into the vessel to make etching treatment of the surface of the substrate in the evacuated vessel prior to the crystal growth.

摘要翻译： 将衬底在抽成超高真空的晶体生长容器中加热，并且将含有要在衬底上生长的晶体的组分元素的气体在预定条件下引入容器中以引起单分子层的连续外延生长， 生长周期被自动控制。 质量分析器与容器中的衬底相对设置，从而可以不断地追踪和评估每个分子层的晶体生长过程。 蚀刻剂气体引入喷嘴延伸到容器中，以在晶体生长之前对真空容器中的衬底的表面进行蚀刻处理。

公开(公告)号：US09466711B2

公开(公告)日：2016-10-11

申请号：US12865330

申请日：2009-01-28

申请人： Seiji Momota ,  Hitoshi Abe ,  Takashi Shiigi ,  Takeshi Fujii ,  Koh Yoshikawa ,  Tetsutaro Imagawa ,  Masaki Koyama ,  Makoto Asai

发明人： Seiji Momota ,  Hitoshi Abe ,  Takashi Shiigi ,  Takeshi Fujii ,  Koh Yoshikawa ,  Tetsutaro Imagawa ,  Masaki Koyama ,  Makoto Asai

IPC分类号： H01L29/78 ,  H01L29/96 ,  H01L29/739 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423

CPC分类号： H01L27/0629 ,  H01L27/0658 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7815 ,  H01L29/7827

摘要： Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator (36) is larger than a product of the resistor and maximal current flowing through the current detection device (21) with reverse bias. A diffusion length of a p-body region (32) of the main device (24) is shorter than that of a p-body (31) of the current detection device (21). A curvature radius at an end portion of the p-body region (32) of the main device (24) is smaller than that of the p-body (31) of the current detection device (21). As a result, at the inverse bias, electric field at the end portion of the p-body region (32) of the main device (24) becomes stronger than that of the p-body region (31) of the current detection device (21). Consequently, avalanche breakdown tends to occur earlier in the main device 24 than the current detection device (21).

摘要翻译： 在主装置（24）的源电极（25）和电流检测装置（21）的电流检测电极（22）之间连接用于检测电流的电阻器。 栅极绝缘体（36）的介电耐受电压大于电阻器和流过电流检测装置（21）的反向偏压的最大电流的乘积。 主装置（24）的p体区域（32）的扩散长度短于电流检测装置（21）的p体（31）的扩散长度。 主装置（24）的p体区域（32）的端部的曲率半径比电流检测装置（21）的p体（31）的曲率半径小。 结果，在逆偏压下，主装置（24）的p体区域（32）的端部的电场变得比电流检测装置的p体区域（31）的电场强 21）。 因此，主装置24中的雪崩击穿比电流检测装置（21）更容易发生。

公开(公告)号：US08011344B2

公开(公告)日：2011-09-06

申请号：US12455504

申请日：2009-06-03

申请人： Yoshio Yoshihara ,  Shuhei Maruyama ,  Teruyuki Saitoh ,  Hitoshi Abe

发明人： Yoshio Yoshihara ,  Shuhei Maruyama ,  Teruyuki Saitoh ,  Hitoshi Abe

IPC分类号： F02B77/04 ,  B01D50/00

CPC分类号： A01D34/82 ,  F02M35/02 ,  F02M35/10013 ,  F02M35/1017

摘要： An engine air intake system for an engine-powered working machine includes a lever cover which covers at least a base portion of an operation control lever mounted on an operation handle for operation by a human operator to control operation of at least one of the working machine and an engine of the working machine, a lower cover disposed inside the lever cover so as to define jointly with the lever cover a hollow space, an air intake portion having an air inlet opening and disposed in the lever cover such that at least the air inlet opening is disposed within the hollow space, and a fresh air guide hose interconnecting the air intake portion and the interior of an air-cleaner case.

摘要翻译： 一种用于发动机动力工作机械的发动机进气系统，包括杆盖，该杆盖至少覆盖安装在操作手柄上的操作控制杆的基部，用于由操作者操作以控制至少一个工作机 工作机的发动机，设置在杠杆盖内侧的下盖，以便与杠杆覆盖一个中空空间;空气入口部分，具有进气口，并设置在杠杆盖中，使得至少空气 入口开口设置在中空空间内，以及将进气部分与空气滤清器壳体的内部相互连接的新鲜导气软管。

公开(公告)号：US20110006446A1

公开(公告)日：2011-01-13

申请号：US12922206

申请日：2009-03-19

申请人： Hitoshi Abe ,  Yukio Sugimoto ,  Eiichi Utsugi

发明人： Hitoshi Abe ,  Yukio Sugimoto ,  Eiichi Utsugi

IPC分类号： F02M37/04

CPC分类号： F02M7/08 ,  F02M7/06 ,  F02M15/06 ,  F02M17/34

摘要： Disclosed is an engine fuel supply apparatus which can be made smaller in size and in which the amount of fuel in an air-fuel mixture can be increased with a fast response in correspondence with the operation of a throttle valve when the engine is accelerated rapidly. The fuel supply apparatus is provided with a fuel booster pump. A portion of an air-fuel mixture is introduced into a negative-pressure chamber of the fuel booster pump via a negative-pressure chamber channel, and the fuel booster pump is actuated. The actuation forces air in a pump chamber to flow into a pressure chamber, and fuel in a fuel storage chamber is temporarily supplied to a carburetor.

摘要翻译： 本发明公开了一种发动机燃料供给装置，其能够在发动机快速加速时与制动器的操作相对应地快速响应地增大空气燃料混合物中的燃料量，使其能够增大。 燃料供给装置设置有燃料增压泵。 一部分空气燃料混合物通过负压室通道被引入到燃料增压泵的负压室中，并且燃料增压泵被致动。 致动迫使泵室中的空气流入压力室，并且燃料储存室中的燃料临时供应到化油器。