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公开(公告)号：US20160087202A1
公开(公告)日：2016-03-24
申请号：US14842052
申请日：2015-09-01
IPC分类号： H01L45/00
CPC分类号： H01L45/142 , G11C13/0014 , G11C2213/15 , G11C2213/30 , H01L27/28 , H01L45/04 , H01L45/1253 , H01L45/14
摘要： An organic molecular memory in an embodiment includes a first conductive layer; a second conductive layer; and an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer including an organic molecule having an oligophenylene ethynylene backbone, the oligophenylene ethynylene backbone including three or more benzene rings, and the oligophenylene ethynylene backbone including two fluorine atoms added in ortho positions or meta positions of one of the benzene rings other than benzene rings at both ends.
摘要翻译： 实施方案中的有机分子存储器包括第一导电层; 第二导电层; 以及设置在所述第一导电层和所述第二导电层之间的有机分子层，所述有机分子层包含具有低亚乙烯基亚乙炔主链的有机分子，所述低亚苯基亚乙炔主链包含三个以上的苯环，所述低聚亚乙炔主链包括两个氟 在两个苯环之外的苯环之一的邻位置或间位加成原子。
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公开(公告)号：US20150228335A1
公开(公告)日：2015-08-13
申请号：US14695632
申请日：2015-04-24
发明人： Hideyuki NISHIZAWA , Reiko YOSHIMURA , Tsukasa TADA , Shigeki HATTORI , Masaya TERAI , Satoshi MIKOSHIBA , Koji ASAKAWA
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0016 , G11C2213/53 , H01L45/1233 , H01L45/1253 , H01L51/0078 , H01L51/0092 , H01L51/0098 , H01L51/0595
摘要： An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including charge-storage molecular chains or variable-resistance molecular chains, the charge-storage molecular chains or the variable-resistance molecular chains including fused polycyclic groups.
摘要翻译： 实施方案的有机分子存储器包括第一导电层，第二导电层和介于第一导电层和第二导电层之间的有机分子层，有机分子层包括电荷储存分子链或可变电阻分子 链，电荷储存分子链或可变阻力分子链，包括稠合多环基团。
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3.发明申请METHOD FOR MANUFACTURING MEMORY DEVICE AND METHOD FOR MANUFACTURING METAL WIRING 有权用于制造存储器件的方法和用于制造金属布线的方法公开(公告)号：US20160087206A1
公开(公告)日：2016-03-24
申请号：US14842234
申请日：2015-09-01
发明人： Atsushi HIENO , Koji ASAKAWA
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/14 , H01L45/1666
摘要： A method for manufacturing a memory device of an embodiment includes: forming on a substrate a block copolymer layer which contains a first polymer and a second polymer having lower surface energy than that of the first polymer; performing thermal treatment on the block copolymer layer, to separate the block copolymer layer such that a first phase containing the first polymer and extending in the first direction and a second phase containing the second polymer and extending in the first direction are alternately arrayed; selectively forming on the first phase a first metal wiring layer extending in the first direction; forming on the first metal wiring layer a memory layer where resistance changes by application of a voltage; and forming on the memory layer a second metal wiring layer which extends in a second direction intersecting in the first direction.
摘要翻译： 一种实施方式的存储器件的制造方法包括：在基板上形成嵌段共聚物层，该嵌段共聚物层含有比第一聚合物低的表面能的第一聚合物和第二聚合物; 对嵌段共聚物层进行热处理，以分离嵌段共聚物层，使得包含第一聚合物并在第一方向上延伸的第一相和含有第二聚合物并且沿第一方向延伸的第二相交替排列; 在第一相上选择性地形成沿第一方向延伸的第一金属布线层; 在第一金属布线层上形成通过施加电压而电阻变化的存储层; 以及在所述存储层上形成沿与所述第一方向相交的第二方向延伸的第二金属布线层。
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4.发明申请公开(公告)号：US20150311393A1
公开(公告)日：2015-10-29
申请号：US14741789
申请日：2015-06-17
发明人： Koji ASAKAWA , Akira FUJIMOTO , Ryota KITAGAWA , Kumi MASUNAGA , Takanobu KAMAKURA , Shinji NUNOTANI
CPC分类号： H01L33/38 , H01L33/0025 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/40 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers.
摘要翻译： 根据一个实施例，半导体发光器件包括结构，第一电极层和第二电极层。 该结构包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 第一电极层设置在该结构的第一半导体层一侧。 第一电极层由金属制成并且包含接触第一半导体层的部分。 第二电极层设置在该结构的第二半导体层一侧。 第二电极层具有厚度不小于10纳米且不大于50纳米的金属部分，并且穿过金属部分的多个开口，每个开口的当量圆直径不小于10纳米， 不超过5微米。
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公开(公告)号：US20150263125A1
公开(公告)日：2015-09-17
申请号：US14641746
申请日：2015-03-09
IPC分类号： H01L29/51 , H01L27/115 , H01L29/792
CPC分类号： H01L27/11582 , H01L27/283 , H01L29/792 , H01L51/0529
摘要： A nonvolatile semiconductor memory device includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode and having an organic molecule including a porphyrin structure with oxymetal or chlorometal at the center.
摘要翻译： 非易失性半导体存储器件包括半导体层，控制栅极电极和设置在半导体层和控制栅电极之间的有机分子层，并且在中心具有含有氧化金属或氯金属的卟啉结构的有机分子。
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公开(公告)号：US20140008601A1
公开(公告)日：2014-01-09
申请号：US14022756
申请日：2013-09-10
发明人： Hideyuki NISHIZAWA , Shigeki HATTORI , Masaya TERAI , Satoshi MIKOSHIBA , Koji ASAKAWA , Tsukasa TADA
IPC分类号： H01L51/05
CPC分类号： H01L29/792 , B82Y10/00 , G11C13/0014 , G11C13/0016 , G11C2213/53 , H01L29/16 , H01L29/42348 , H01L29/513 , H01L29/517 , H01L29/518 , H01L51/0077 , H01L51/0092 , H01L51/0098 , H01L51/0591
摘要： An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents.
摘要翻译： 实施方案的有机分子存储器包括第一导电层，第二导电层和介于第一导电层和第二导电层之间的有机分子层，有机分子层包括可变电阻分子链或电荷储存分子 链，可变电阻分子链或具有吸电子取代基的电荷储存分子链。
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公开(公告)号：US20210141310A1
公开(公告)日：2021-05-13
申请号：US17148849
申请日：2021-01-14
发明人： Hiroko NAKAMURA , Koji ASAKAWA , Naoko KIHARA , Reiko YOSHIMURA , Ko YAMADA
IPC分类号： G03F7/20 , G03F7/039 , G03F7/004 , G03F7/038 , G03F7/16 , H01L29/66 , G03F7/38 , G03F7/32 , H01L21/027 , H01L21/04 , H01L29/16
摘要： A photosensitive composition of an embodiment includes: a resin containing at least one selected from polyacrylic acid, polymethacrylic acid, a cycloolefin-maleic anhydride copolymer, polycycloolefin, and a vinyl ether-maleic anhydride copolymer and having an ester bond which is caused to generate carboxylic acid by an acid or an ether bond which is caused to generate alcohol by an acid; and a photo acid generator which generates an acid by being irradiated with light, of which a wavelength is not less than 300 nm nor more than 500 nm, or KrF excimer laser light, the photo acid generator containing a substance that has a naphthalene ring or a benzene ring and in which at least one carbon atom of the naphthalene ring or the benzene ring is bonded to a bulky group.
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公开(公告)号：US20160087067A1
公开(公告)日：2016-03-24
申请号：US14842312
申请日：2015-09-01
发明人： Shigeki HATTORI , Tsukasa TADA , Masaya TERAI , Hideyuki NISHIZAWA , Koji ASAKAWA , Yoshiaki FUKUZUMI
IPC分类号： H01L29/51 , H01L29/792
CPC分类号： H01L29/518 , G11C11/5664 , G11C16/0483 , H01L27/285 , H01L29/511 , H01L29/517 , H01L51/0091 , H01L51/0591
摘要： A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a control gate electrode; and an organic molecular layer, which is provided between the semiconductor layer and the control gate electrode, and has organic molecules including a molecular structure described by a molecular formula (1).
摘要翻译： 根据实施例的非易失性半导体存储器件包括：半导体层; 控制栅电极; 以及设置在半导体层和控制栅电极之间的有机分子层，并且具有包含分子式（1）所示的分子结构的有机分子。
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公开(公告)号：US20150263127A1
公开(公告)日：2015-09-17
申请号：US14658651
申请日：2015-03-16
IPC分类号： H01L29/51 , H01L27/115 , H01L29/792
CPC分类号： H01L29/518 , H01L27/11565 , H01L27/11568 , H01L27/11582 , H01L27/283 , H01L29/513 , H01L29/517 , H01L29/792 , H01L51/0529
摘要： A nonvolatile semiconductor memory device includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode and having an organic molecule including a porphyrin structure.
摘要翻译： 非易失性半导体存储器件包括半导体层，控制栅电极和设置在半导体层和控制栅电极之间并且具有包含卟啉结构的有机分子的有机分子层。
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10.发明申请公开(公告)号：US20140349421A1
公开(公告)日：2014-11-27
申请号：US14455540
申请日：2014-08-08
发明人： Akira FUJIMOTO , Ryota KITAGAWA , Kumi MASUNAGA , Kenji NAKAMURA , Tsutomu NAKANISHI , Koji ASAKAWA , Takanobu KAMAKURA , Shinji NUNOTANI
IPC分类号： H01L33/40
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/38 , H01L33/40 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.
摘要翻译： 根据一个实施例，半导体发光器件包括包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构。 该器件还包括设置在该结构的第二半导体层侧上的电极层。 电极层包括厚度不小于10纳米且不大于100纳米的金属部分。 多个开口刺穿金属部分，每个开口具有不小于10纳米且不大于5微米的等效圆直径。 所述装置包括在所述金属部分和所述开口的内表面上提供的无机膜，所述无机膜相对于从所述发光层发射的光具有透射率。
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