摘要:
A chip package structure is disclosed. The chip package structure essentially comprises a carrier, one or more chips, a heat sink and an encapsulating material layer. At least one of the chips is flip-chip bonded and electrically connected to the carrier or another chip. There is a flip-chip bonding gap between the chip and the carrier or other chips. A heat sink is positioned on the uppermost chip. The encapsulating material layer fills the flip-chip bonding gap as well as a gap between the uppermost chip and the heat sink. A part of the surface of the heat sink away from the upper-most chip is exposed. Furthermore, the encapsulating material layer is formed in a simultaneous molding process. For example, the chip is separated from the heat sink by a distance between 0.03˜0.2 mm, and the encapsulating material has a thermal conductivity greater than 1.2 W/m.K.
摘要:
A chip package structure and a process for fabricating the same is disclosed. The chip package structure mainly comprises a carrier, a chip and an encapsulating material layer. To fabricate the chip package, a carrier and a plurality of chips are provided. Each chip has at least an active surface with a plurality of bumps thereon. The chips and the carrier are electrically connected. An encapsulating material layer that fills the bonding gap between the chips and the carriers and covers the chips and carrier is formed. The encapsulating material layer between the chips and the carrier has a first thickness and the encapsulating material layer over the chips has a second thickness. The second thickness has a value between half to twice the first thickness.
摘要:
A chip package structure and a process for fabricating the same is disclosed. The chip package structure mainly comprises a carrier, a chip and an encapsulating material layer. To fabricate the chip package, a carrier and a plurality of chips are provided. Each chip has at least an active surface with a plurality of bumps thereon. The chips and the carrier are electrically connected. An encapsulating material layer that fills the bonding gap between the chips and the carriers and covers the chips and carrier is formed. The encapsulating material layer between the chips and the carrier has a first thickness and the encapsulating material layer over the chips has a second thickness. The second thickness has a value between half to twice the first thickness.
摘要:
A chip package structure is disclosed. The chip package structure essentially comprises a carrier, one or more chips, a heat sink and an encapsulating material layer. At least one of the chips is bonded and electrically connected to the carrier or another chip using a flip-chip bonding technique. A flip-chip bonding gap is set up between the chip and he carrier or other chips. The heat sink is set up over the top chip. The heat sink has an area bigger than the chip. The encapsulating material layer fills up the flip-chip bonding gap and covers the carrier as well as the heat sink. The encapsulating material layer is formed in a simultaneous molding process and has a thermal conductivity more than 1.2 W/m.K. Furthermore, a plurality of standoff components may be selectively positioned on the heat sink.
摘要:
A process for fabricating a chip package structure is disclosed. To fabricate the chip package structure, a carrier and a plurality of chips are provided. Each chip has an active surface and at least one of the active surfaces has a plurality of bumps thereon. The chips and the carrier are electrically connected together. Thereafter, a heat sink is attached to the back of the chips and then at least one heat-resistant buffering film is formed over part of the heat sink surface. An encapsulating material layer is formed over the carrier and filling bonding gaps between the chips and the carrier. The encapsulating material within the bonding gaps has a thickness. The maximum diameter of particles constituting the encapsulating material layer is less than half of the said thickness.
摘要:
A chip package structure and a process for fabricating the same is disclosed. The chip package structure mainly comprises a carrier, a chip and an encapsulating material layer. To fabricate the chip package, a carrier and a plurality of chips are provided. Each chip has at least an active surface with a plurality of bumps thereon. The chips and the carrier are electrically connected. An encapsulating material layer that fills the bonding gap between the chips and the carriers and covers the chips and carrier is formed. The encapsulating material layer between the chips and the carrier has a first thickness and the encapsulating material layer over the chips has a second thickness. The second thickness has a value between half to twice the first thickness.
摘要:
The present invention discloses a dielectric composition having two steps of laminating temperatures. The composition is comprised of: a diamine curing agent containing asymmetrical chemical structures with different reactivity; an epoxy resin compound, containing at least two epoxy groups; and inorganic powder. In addition, flame retardant and toughener are added dependent on the requirements.
摘要:
A method for manufacturing a substrate with surface substrates by employing photothermal effect is described. Nanoparticles on the surface of the substrate excited by a beam convert light energy to thermal energy. The surface structure on the substrate is formed through the thermal energy generated by the excited nanoparticles. The substrate with plural pores is thus formed.
摘要:
A composition for a thermal interface material is provided. The deficiencies of low thermal conductivity and high thermal resistance in the conventional thermal interface materials are resolved. The CNT-LC thermal composite structure is formed by using carbon nanotube with high thermal conductivity and liquid crystal polymer with the well-ordered structure. The thermal interface material thereby has a high thermal conductivity. The added amount of carbon nanotube is less than the added amount of metal or ceramic powders in the prior art for improving the dispersion process. The CNT-LC thermal composite structure and the phase change resin are compatible without phase separation. The thermal interface material has a phase change temperature about 45˜75° C. Any holes, gaps and dents on the surface of device are filled at the normal operating temperature of device to reduce the thermal resistance of the entire device.
摘要:
An encapsulation composition for pressure signal transmission including a flexible and low modulus epoxy resin as a substance in combination with plastic balls with pressure signal transmission properties as filler is provided. Therefore, the pressure signal is transmitted by utilizing the property of easy deformation of the flexible epoxy resin under pressure. And the effect of signal transmission is enhanced by the contact between plastic balls. The encapsulation composition is used in a sensor for transmitting pressure signals. The encapsulation composition is hydrophobic, so an electronic device of the sensor can be protected against moisture or water to extend its lifetime. Compared with traditional sensors using liquid for transmitting pressure signal, this sensor using solid encapsulation composition has advantages such as easy production and processing.