公开(公告)号：US20090233103A1

公开(公告)日：2009-09-17

申请号：US11917508

申请日：2006-06-15

申请人： Kang-go Chung ,  Satoshi Futami ,  Hiroshi Miyao ,  Takayoshi Tanabe

发明人： Kang-go Chung ,  Satoshi Futami ,  Hiroshi Miyao ,  Takayoshi Tanabe

IPC分类号： G02B1/00 ,  B32B27/08 ,  C08L75/00 ,  G02B3/08

CPC分类号： C08G18/4879 ,  C08G18/672 ,  C08G18/673 ,  C08G18/7621 ,  C08G18/8064 ,  C08G18/8175 ,  G02B1/04 ,  Y10T428/31587 ,  C08L75/14

摘要： A radiation-curable resin composition for optical parts comprising (A) 5% to 70% by weight of a urethane (meth)acrylate which is a reaction product of (a) a (meth)acrylate having a hydroxyl group, (b) a polyisocyanate having an aromatic ring, (c) a polyol, and (d) an alcohol having 1 to 4 carbon atoms without a polymerizable unsaturated group, and which has (meth)acryloyl groups in an amount of 40% to 85% by mole of its molecular ends on average of the reaction product; and (B) 10% to 80% by weight of a compound, other than the component (A), having an ethylenically unsaturated group is provided. A cured product of the composition exhibits a high refractive index, excellent property of adhesion to various plastic substrates, appropriate hardness, and little sign of yellowing.

摘要翻译： 一种光学部件用放射线固化型树脂组合物，其含有（A）5重量％〜70重量％的作为（a）具有羟基的（甲基）丙烯酸酯的反应产物的氨基甲酸酯（甲基）丙烯酸酯，（b） 具有芳环的多异氰酸酯，（c）多元醇，（d）不含可聚合不饱和基团的碳原子数1〜4的醇，（甲基）丙烯酰基的含量为40〜85摩尔％ 其分子结束于反应产物的平均值; 和（B）10％至80％重量的具有烯键式不饱和基团的组分（A）以外的化合物。 该组合物的固化产物具有高折射率，对各种塑料基材的粘附性优异，适当的硬度和少黄色迹象。

公开(公告)号：US08999442B2

公开(公告)日：2015-04-07

申请号：US13503899

申请日：2010-10-20

申请人： Ryuichi Saito ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai

发明人： Ryuichi Saito ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai

IPC分类号： B05D1/30 ,  B05D1/02 ,  B05D5/00 ,  B05D7/00 ,  B28B19/00 ,  B29B15/10 ,  C23C18/00 ,  C23C20/00 ,  C23C28/00 ,  C23C16/18 ,  C07C49/92 ,  C07F15/00 ,  C23C16/00 ,  H01L21/768 ,  H01L49/02

CPC分类号： C23C16/18 ,  C07C49/92 ,  C07F15/0046 ,  H01L21/76843 ,  H01L28/65

摘要： Disclosed is a ruthenium film-forming material having a lower melting point and a higher vapor pressure that facilitates supply of the material onto a base and moreover enables a high-quality ruthenium film to be obtained.A ruthenium film-forming material includes a compound represented by general formula (1) below (wherein R1 is independently at each occurrence a hydrogen atom, a halogen atom, a hydrocarbon group having 1 to 4 carbon atoms or a halogenated hydrocarbon group having 1 to 4 carbon atoms; R2 is independently at each occurrence a halogenated hydrocarbon group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms or a halogenated alkoxy group having 1 to 4 carbon atoms, with the proviso that R1 and R2 are mutually differing groups; R3 is independently at each occurrence a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms; and L is an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and having at least two double bonds).

摘要翻译： 公开了一种具有较低熔点和较高蒸气压的钌膜形成材料，其有助于将材料供应到基底上，并且还能够获得高质量的钌膜。 钌膜形成材料包括由下述通式（1）表示的化合物（其中R 1在每次出现时独立地为氢原子，卤素原子，具有1至4个碳原子的烃基或卤代烃基，其具有1至 4个碳原子; R 2在每次出现时独立地为具有1至4个碳原子的卤代烃基，具有1至4个碳原子的烷氧基或具有1至4个碳原子的卤代烷氧基，条件是R 1和R 2为 相互不同的基团; R 3在每次出现时独立地为氢原子或具有1至4个碳原子的烃基; L为具有4至10个碳原子且具有至少两个双键的不饱和烃化合物）。

公开(公告)号：US20120101290A1

公开(公告)日：2012-04-26

申请号：US13279957

申请日：2011-10-24

申请人： Ryuuichi SAITOU ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai ,  Sanshiro Komiya ,  Naoto Noda ,  Maki Nishiguchi

发明人： Ryuuichi SAITOU ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai ,  Sanshiro Komiya ,  Naoto Noda ,  Maki Nishiguchi

IPC分类号： C07F15/00

CPC分类号： C07F17/02 ,  C07F15/0046 ,  C07F15/0053

摘要： A method for producing ruthenium compound including the step of reacting a compound represented by General Formula (1): RuL02 (wherein L0 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds) with trifluorophosphine or reacting the compound represented by General Formula (1) with trifluorophosphine, and hydrogen or a halogen to obtain a compound represented by General Formula (2): Ru(PF3)l(L1)m(L2)n (wherein L1 represents a hydrogen atom or halogen atom, L2 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds, 1 is an integer from 1 to 5, m is an integer from 0 to 4, and n is an integer from 0 to 2, provided that l+m+2n=5 or 6). With this method, a trifluorophosphine-ruthenium compound can be synthesized under low-temperature and low-pressure conditions.

摘要翻译： 一种制备钌化合物的方法，包括使通式（1）表示的化合物：RuL02（其中L0表示具有4-10个碳原子和至少两个双键的不饱和烃化合物）与三氟化膦反应的步骤或使表示的化合物 通式（1）表示的化合物和氢或卤素，得到通式（2）表示的化合物：Ru（PF 3）l（L1）m（L2）n（其中，L 1表示氢原子或卤素原子， L2表示具有4至10个碳原子和至少两个双键的不饱和烃化合物，1是1至5的整数，m是0至4的整数，n是0至2的整数，条件是l + m + 2n = 5或6）。 通过该方法，可以在低温低压条件下合成三氟化膦 - 钌化合物。

公开(公告)号：US20120282414A1

公开(公告)日：2012-11-08

申请号：US13503899

申请日：2010-10-20

申请人： Ryuichi Saito ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai

发明人： Ryuichi Saito ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai

IPC分类号： C07F15/00 ,  B05D3/02 ,  B05D3/06 ,  B05D7/24

CPC分类号： C23C16/18 ,  C07C49/92 ,  C07F15/0046 ,  H01L21/76843 ,  H01L28/65

摘要： Disclosed is a ruthenium film-forming material having a lower melting point and a higher vapor pressure that facilitates supply of the material onto a base and moreover enables a high-quality ruthenium film to be obtained.A ruthenium film-forming material includes a compound represented by general formula (1) below (wherein R1 is independently at each occurrence a hydrogen atom, a halogen atom, a hydrocarbon group having 1 to 4 carbon atoms or a halogenated hydrocarbon group having 1 to 4 carbon atoms; R2 is independently at each occurrence a halogenated hydrocarbon group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms or a halogenated alkoxy group having 1 to 4 carbon atoms, with the proviso that R1 and R2 are mutually differing groups; R3 is independently at each occurrence a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms; and L is an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and having at least two double bonds).

摘要翻译： 公开了一种具有较低熔点和较高蒸气压的钌膜形成材料，其有助于将材料供应到基底上，并且还能够获得高质量的钌膜。 钌膜形成材料包括由下述通式（1）表示的化合物（其中R 1在每次出现时独立地为氢原子，卤素原子，具有1至4个碳原子的烃基或卤代烃基，其具有1至 4个碳原子; R 2在每次出现时独立地为具有1至4个碳原子的卤代烃基，具有1至4个碳原子的烷氧基或具有1至4个碳原子的卤代烷氧基，条件是R 1和R 2为 相互不同的基团; R 3在每次出现时独立地为氢原子或具有1至4个碳原子的烃基; L为具有4至10个碳原子且具有至少两个双键的不饱和烃化合物）。

公开(公告)号：US08278471B2

公开(公告)日：2012-10-02

申请号：US13279957

申请日：2011-10-24

申请人： Ryuuichi Saitou ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai ,  Sanshiro Komiya ,  Naoto Noda ,  Maki Nishiguchi

发明人： Ryuuichi Saitou ,  Kang-go Chung ,  Hideki Nishimura ,  Tatsuya Sakai ,  Sanshiro Komiya ,  Naoto Noda ,  Maki Nishiguchi

IPC分类号： C07F15/00

CPC分类号： C07F17/02 ,  C07F15/0046 ,  C07F15/0053

摘要： A method for producing ruthenium compound including the step of reacting a compound represented by General Formula (1): RuL02 (wherein L0 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds) with trifluorophosphine or reacting the compound represented by General Formula (1) with trifluorophosphine, and hydrogen or a halogen to obtain a compound represented by General Formula (2): Ru(PF3)l(L1)m(L2)n (wherein L1 represents a hydrogen atom or halogen atom, L2 represents an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and at least two double bonds, l is an integer from 1 to 5, m is an integer from 0 to 4, and n is an integer from 0 to 2, provided that l+m+2n=5 or 6). With this method, a trifluorophosphine-ruthenium compound can be synthesized under low-temperature and low-pressure conditions.

摘要翻译： 一种制备钌化合物的方法，包括使通式（1）表示的化合物：RuL02（其中L0表示具有4-10个碳原子和至少两个双键的不饱和烃化合物）与三氟化膦反应的步骤或使表示的化合物 通式（1）表示的化合物和氢或卤素，得到通式（2）表示的化合物：Ru（PF 3）l（L1）m（L2）n（其中，L 1表示氢原子或卤素原子， L2表示具有4-10个碳原子和至少两个双键的不饱和烃化合物，l是1至5的整数，m是0-4的整数，n是0-2的整数，条件是l + m + 2n = 5或6）。 通过该方法，可以在低温低压条件下合成三氟化膦 - 钌化合物。

公开(公告)号：US08093419B2

公开(公告)日：2012-01-10

申请号：US12473861

申请日：2009-05-28

申请人： Youhei Nobe ,  Hisashi Nakagawa ,  Kang-go Chung

发明人： Youhei Nobe ,  Hisashi Nakagawa ,  Kang-go Chung

IPC分类号： C07F7/08

CPC分类号： C07F7/1876

摘要： A method of producing an organosilicon compound includes substituting at least an OR1 group of a compound shown by the following general formula (1) to obtain a compound shown by the following general formula (2), Si(OR1)3-mY1m—R2—Si(OR3)3-nY2n  (1) Si(OR4)3-mY1m—R2—Si(OR4)3-nY2n  (2).

摘要翻译： 一种生产有机硅化合物的方法包括用至少一种OR1基团取代由以下通式（1）表示的化合物，得到下列通式（2）表示的化合物：Si（OR 1）3-mY1m-R2- Si（OR3）3-nY2n（1）Si（OR4）3-mY1m-R2-Si（OR4）3-nY2n（2）。

公开(公告)号：US08097745B2

公开(公告)日：2012-01-17

申请号：US12749735

申请日：2010-03-30

申请人： Yohei Nobe ,  Kang-go Chung ,  Ryuichi Saito

发明人： Yohei Nobe ,  Kang-go Chung ,  Ryuichi Saito

IPC分类号： C07F7/18

CPC分类号： C07F7/188 ,  C07F7/1876

摘要： A simple method of producing an organosilicon compound of a formula R2n(OR4)mSi—R1—Si(OR4)mR2n is disclosed. The method comprises the following two steps, Y—R1—Y+SiXm+1R2n->R2nXmSi—R1—SiXmR2n R2nXmSi—R1—SiXmR2n+M(OR4)r,->R2n(OR4)mSi—R1—Si(OR4)mR2n In the formulas, R1 is methylene, alkylene, or arylene, R2 is alkyl, alkenyl, alkynyl, or aryl, m and n is 0 to 3, provided m+n=3, at least one m being 1 or more, Y is halogen, X is hydrogen or halogen, R4 is alkyl, alkenyl, alkynyl, or aryl, M is metal, and r is the valence of the metal). The organosilicon compound is used to form a film having excellent heat resistance, chemical resistance, conductivity, and modulus of elasticity.

摘要翻译： 公开了制备式R 2n（OR 4）m Si-R 1 -Si（OR 4）m R 2n的有机硅化合物的简单方法。 该方法包括以下两个步骤：Y-R1-Y + SiXm + 1R2n-> R2nXmSi-R1-SiXmR2n R2nXmSi-R1-SiXmR2n + M（OR4）r - →R2n（OR4）mSi-R1-Si（OR4） mR2n在式中，R1是亚甲基，亚烷基或亚芳基，R2是烷基，烯基，炔基或芳基，m和n是0-3，如果m + n = 3，至少一个m是1或更大，Y 是卤素，X是氢或卤素，R4是烷基，烯基，炔基或芳基，M是金属，r是金属的价）。 有机硅化合物用于形成具有优异的耐热性，耐化学性，导电性和弹性模量的膜。

公开(公告)号：US20110082309A1

公开(公告)日：2011-04-07

申请号：US12749735

申请日：2010-03-30

申请人： Youhei Nobe ,  Kang-go Chung ,  Ryuuichi Saitou

发明人： Youhei Nobe ,  Kang-go Chung ,  Ryuuichi Saitou

IPC分类号： C07F7/08 ,  C07F7/16 ,  C07F7/18

CPC分类号： C07F7/188 ,  C07F7/1876

摘要： A simple method of producing an organosilicon compound of a formula R2n(OR4)mSi—R1—Si(OR4)mR2n is disclosed. The method comprises the following two steps, Y—R1—Y+SiXm+1R2n->R2nXmSi—R1—SiXmR2n R2nXmSi—R1—SiXmR2n+M(OR4)r,->R2n(OR4)mSi—R1—Si(OR4)mR2n In the formulas, R1 is methylene, alkylene, or arylene, R2 is alkyl, alkenyl, alkynyl, or aryl, m and n is 0 to 3, provided m+n=3, at least one m being 1 or more, Y is halogen, X is hydrogen or halogen, R4 is alkyl, alkenyl, alkynyl, or aryl, M is metal, and r is the valence of the metal). The organosilicon compound is used to form a film having excellent heat resistance, chemical resistance, conductivity, and modulus of elasticity.

摘要翻译： 公开了制备式R 2n（OR 4）m Si-R 1 -Si（OR 4）m R 2n的有机硅化合物的简单方法。 该方法包括以下两个步骤：Y-R1-Y + SiXm + 1R2n-> R2nXmSi-R1-SiXmR2n R2nXmSi-R1-SiXmR2n + M（OR4）r - →R2n（OR4）mSi-R1-Si（OR4） mR2n在式中，R1是亚甲基，亚烷基或亚芳基，R2是烷基，烯基，炔基或芳基，m和n是0-3，如果m + n = 3，至少一个m是1或更大，Y 是卤素，X是氢或卤素，R4是烷基，烯基，炔基或芳基，M是金属，r是金属的价）。 有机硅化合物用于形成具有优异的耐热性，耐化学性，导电性和弹性模量的膜。

公开(公告)号：US20110042789A1

公开(公告)日：2011-02-24

申请号：US12934806

申请日：2009-03-24

申请人： Hisashi Nakagawa ,  Yohei Nobe ,  Kang-go Chung ,  Ryuichi Saito ,  Terukazu Kokubo

发明人： Hisashi Nakagawa ,  Yohei Nobe ,  Kang-go Chung ,  Ryuichi Saito ,  Terukazu Kokubo

IPC分类号： H01L21/31 ,  H01L23/28 ,  C07F7/08

CPC分类号： C23C16/401 ,  C07F7/1804 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/31695 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A chemical vapor deposition material includes an organosilane compound shown by the following general formula (1). wherein R1 and R2 individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, or a phenyl group, R3 and R4 individually represent an alkyl group having 1 to 4 carbon atoms, an acetyl group, or a phenyl group, m is an integer from 0 to 2, and n is an integer from 1 to 3.

摘要翻译： 化学气相沉积材料包括由以下通式（1）表示的有机硅烷化合物。 其中R1和R2各自表示氢原子，具有1至4个碳原子的烷基，乙烯基或苯基，R 3和R 4各自表示具有1至4个碳原子的烷基，乙酰基或 苯基，m为0〜2的整数，n为1〜3的整数。

公开(公告)号：US20090299086A1

公开(公告)日：2009-12-03

申请号：US12473861

申请日：2009-05-28

申请人： Youhei NOBE ,  Hisashi Nakagawa ,  Kang-go Chung

发明人： Youhei NOBE ,  Hisashi Nakagawa ,  Kang-go Chung

IPC分类号： C07F7/08

CPC分类号： C07F7/1876

摘要： A method of producing an organosilicon compound includes substituting at least an OR1 group of a compound shown by the following general formula (1) to obtain a compound shown by the following general formula (2), Si(OR1)3-mY1m—R2—Si(OR3)3-nY2n  (1) Si(OR4)3-mY1m—R2—Si(OR4)3-nY2n  (2).

摘要翻译： 一种生产有机硅化合物的方法包括用至少一种OR1基团取代由以下通式（1）表示的化合物，得到下列通式（2）表示的化合物：Si（OR 1）3-mY1m-R2- Si（OR3）3-nY2n（1）Si（OR4）3-mY1m-R2-Si（OR4）3-nY2n（2）。