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    Method for manufacturing a semiconductor device
    1.
    发明授权
    Method for manufacturing a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US07413987B2

    公开(公告)日：2008-08-19

    申请号：US11431076

    申请日：2006-05-10

    Applicant: Katsuhiko Hieda ,  Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Katsuhiko Tachibana ,  Soichi Yamazaki

    Inventor： Katsuhiko Hieda ,  Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Katsuhiko Tachibana ,  Soichi Yamazaki

    IPC: H02L21/302

    CPC classification number: H01L21/02222 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/31111 ,  H01L21/3125 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/31683 ,  H01L21/76224 ,  H01L21/76229

    Abstract: There is disclosed a method of manufacturing a semiconductor device, wherein an Si3N4 film is formed as a mask member on the surface of a silicon substrate, then etched to form an STI trench. A solution of perhydrogenated silazane polymer is coated on the surface of the silicon substrate having an STI trench formed thereon to deposit a coated film (PSZ film) thereon. The PSZ film deposited on the mask member is removed, leaving part of the PSZ film inside the trench, wherein the thickness of the PSZ film is controlled to make the height thereof from the bottom of the STI trench become 600 nm or less. Thereafter, the PSZ film is heat-treated in a water vapor-containing atmosphere to convert the PSZ film into a silicon oxide film through a chemical reaction of the PSZ film. Subsequently, the silicon oxide film is heat-treated to densify the silicon oxide film.

    Abstract translation: 公开了一种制造半导体器件的方法，其中在硅衬底的表面上形成Si 3 N 4 N 4膜作为掩模构件，然后蚀刻形成 一个STI沟槽。 将过氢化硅氮烷聚合物的溶液涂布在其上形成有STI沟槽的硅衬底的表面上，以在其上沉积涂膜（PSZ膜）。 去除沉积在掩模构件上的PSZ膜，使PSZ膜的一部分留在沟槽内，其中控制PSZ膜的厚度使其从STI沟槽底部的高度变为600nm以下。 然后，在含水蒸汽的气氛中对PSZ膜进行热处理，通过PSZ膜的化学反应将PSZ膜转换成氧化硅膜。 随后，对氧化硅膜进行热处理以使氧化硅膜致密化。

    Method for manufacturing a semiconductor device
    3.
    发明授权
    Method for manufacturing a semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US07071107B2

    公开(公告)日：2006-07-04

    申请号：US10674382

    申请日：2003-10-01

    Applicant: Katsuhiko Hieda ,  Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Katsuhiko Tachibana ,  Soichi Yamazaki

    Inventor： Katsuhiko Hieda ,  Atsuko Kawasaki ,  Masahiro Kiyotoshi ,  Katsuhiko Tachibana ,  Soichi Yamazaki

    IPC: H01L21/302

    CPC classification number: H01L21/02222 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02318 ,  H01L21/02337 ,  H01L21/31111 ,  H01L21/3125 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/31683 ,  H01L21/76224 ,  H01L21/76229

    Abstract: There is disclosed a method of manufacturing a semiconductor device, wherein an Si3N4 film is formed as a mask member on the surface of a silicon substrate, then etched to form an STI trench. A solution of perhydrogenated silazane polymer is coated on the surface of the silicon substrate having an STI trench formed thereon to deposit a coated film (PSZ film) thereon. The PSZ film deposited on the mask member is removed, leaving part of the PSZ film inside the trench, wherein the thickness of the PSZ film is controlled to make the height thereof from the bottom of the STI trench become 600 nm or less. Thereafter, the PSZ film is heat-treated in a water vapor-containing atmosphere to convert the PSZ film into a silicon oxide film through a chemical reaction of the PSZ film. Subsequently, the silicon oxide film is heat-treated to densify the silicon oxide film.

    Abstract translation: 公开了一种制造半导体器件的方法，其中在硅衬底的表面上形成Si 3 N 4 N 4膜作为掩模构件，然后蚀刻形成 一个STI沟槽。 将过氢化硅氮烷聚合物的溶液涂布在其上形成有STI沟槽的硅衬底的表面上，以在其上沉积涂膜（PSZ膜）。 去除沉积在掩模构件上的PSZ膜，使PSZ膜的一部分留在沟槽内，其中控制PSZ膜的厚度使其从STI沟槽底部的高度变为600nm以下。 然后，在含水蒸汽的气氛中对PSZ膜进行热处理，通过PSZ膜的化学反应将PSZ膜转换为氧化硅膜。 随后，对氧化硅膜进行热处理以使氧化硅膜致密化。

    Image Display Device Reinforcing Sheet, Image Display Device and Method for Reinforcing the Same
    10.
    发明申请
    Image Display Device Reinforcing Sheet, Image Display Device and Method for Reinforcing the Same 审中-公开
    图像显示装置加强板，图像显示装置及其加固方法

    公开(公告)号：US20090091878A1

    公开(公告)日：2009-04-09

    申请号：US12226571

    申请日：2007-04-19

    Applicant: Yasuhiko Kawaguchi ,  Katsuhiko Tachibana ,  Hideo Abe

    Inventor： Yasuhiko Kawaguchi ,  Katsuhiko Tachibana ,  Hideo Abe

    IPC: H04N5/64

    CPC classification number: G02F1/133308 ,  G02F2001/133314 ,  G02F2201/503 ,  G02F2201/54 ,  G02F2202/28 ,  G06F1/1601 ,  G06F2200/1612

    Abstract: Provided are an image display device reinforcing sheet capable of reinforcing image display devices easily and effectively, and an image display device provided with the image display device reinforcing sheet, and further provided is a method for reinforcing the image display device using the image display device reinforcing sheet.In the image display device provided with an image display unit and a casing, using the image display device reinforcing sheet including a resin layer and a restricting layer laminated thereon, the resin layer is adhesively bonded to the image display unit and/or the casing and then heated. This allows the resin layer after heating to be firmly stuck to the portion to ensure rigidity, so that the strength of this portion can be improved.

    Abstract translation: 本发明提供一种能够容易且有效地加强图像显示装置的图像显示装置用增强片，以及具备图像显示装置用增强片的图像显示装置，还具备使用图像显示装置加强的图像显示装置的加强方法 片。 在具有图像显示单元和外壳的图像显示装置中，使用包括树脂层和限制层的图像显示装置增强片层叠在一起，将树脂层粘合到图像显示单元和/或壳体上， 然后加热。 这样，加热后的树脂层能够牢固地粘贴到该部分上，以确保刚性，从而能够提高该部分的强度。

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