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1.发明申请COPPER DELAFOSSITE TRANSPARENT P-TYPE SEMICONDUCTOR MATERIALS FOR DYE SENSITIZED SOLAR CELLS 审中-公开用于DENE敏感的太阳能电池的铜箔透明P型半导体材料公开(公告)号：US20100252108A1
公开(公告)日：2010-10-07
申请号：US12643419
申请日：2009-12-21
IPC分类号： H01L31/0256 , H01L31/18
CPC分类号： H01L51/4226 , C25B1/003 , H01G9/2031 , Y02E10/542 , Y02E10/549 , Y02P70/521
摘要： Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBO2 powders, and a pulsed laser deposition (PLD) process for forming thin films of CuBO2, using targets made of the CuBO2 powders. The CuBO2 thin films are optically transparent p-type semiconductor oxide thin films. Devices with CuBO2 thin films include p-type transparent thin film transistors (TTFT) comprising thin film CuBO2, as a channel layer and thin film solar cells with CuBO2 p-layers. Solid state dye sensitized solar cells (SS-DSSC) comprising CuBO2 in various forms, including “core-shell” and “nano-couple” particles, and methods of manufacture, are also described.
摘要翻译： 铜铁矿石材料的制造方法包括用于合成CuBO 2粉末的低温溶胶 - 凝胶法和使用由CuBO 2粉末制成的靶材的用于形成CuBO 2薄膜的脉冲激光沉积（PLD）工艺。 CuBO 2薄膜是光学透明的p型半导体氧化物薄膜。 具有CuBO 2薄膜的器件包括作为沟道层的包括薄膜CuBO 2的p型透明薄膜晶体管（TTFT）和具有CuBO 2 p层的薄膜太阳能电池。 还描述了包括“核 - 壳”和“纳米对”“颗粒的各种形式的CuBO 2的固态染料敏化太阳能电池（SS-DSSC）和制造方法。
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公开(公告)号：US20100261049A1
公开(公告)日：2010-10-14
申请号：US12422739
申请日：2009-04-13
申请人： BYUNG-SUNG LEO KWAK , Nety M. Krishna , Omkaram Nalamasu , Kaushal K. Singh , Steven Verhaverbeke
发明人： BYUNG-SUNG LEO KWAK , Nety M. Krishna , Omkaram Nalamasu , Kaushal K. Singh , Steven Verhaverbeke
CPC分类号： H01M10/0436 , H01G9/0029 , H01G9/012 , H01G9/15 , H01M10/052 , H01M10/0585 , Y02E60/13 , Y10T29/49115
摘要： A readily manufacturable, high power, high energy, large area energy storage device is described. The energy storage device may use processes compatible with large area processing tools, such as large area coating systems and linear processing systems compatible with flexible thin film substrates. The energy storage devices may include batteries, super-capacitors and ultra-capacitors. An energy storage device may include a multiplicity of thin film cells formed on a single substrate, the multiplicity of cells being electrically connected in series, each one of the multiplicity of cells comprising: a current collector on the surface of the substrate; a first electrode on the current collector; a second electrode over the first electrode; and an electrolyte layer between the first electrode and the second electrode. Furthermore, an energy storage device may include a plurality of thin film cells formed on a single substrate, the plurality of cells being electrically connected in a network, the network including both parallel and serial electrical connections between individual cells of the plurality of cells.
摘要翻译： 描述了容易制造的大功率，高能量，大面积的储能装置。 能量存储装置可以使用与大面积加工工具兼容的工艺，例如与柔性薄膜基板兼容的大面积涂覆系统和线性处理系统。 储能装置可以包括电池，超级电容器和超电容器。 能量存储装置可以包括形成在单个基板上的多个薄膜单元，多个单元串联电连接，多个单元中的每一个包括：基板表面上的集电器; 集电器上的第一电极; 第一电极上的第二电极; 以及在第一电极和第二电极之间的电解质层。 此外，能量存储装置可以包括形成在单个基板上的多个薄膜单元，所述多个单元电连接在网络中，所述网络包括多个单元中各个单元之间的并联和串联电连接。
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3.发明申请公开(公告)号：US20100096256A1
公开(公告)日：2010-04-22
申请号：US12255865
申请日：2008-10-22
IPC分类号： C23F1/02
摘要： A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.
摘要翻译： 用于在衬底上图案化磁性薄膜的方法包括：提供围绕磁性薄膜的图案，该图案的选择区域允许一个或多个元件的激发离子的穿透。 通过足够的能量产生通电的离子以穿透选择区域和一部分与选择区域相邻的磁性薄膜。 放置基板以接收通电离子。 磁性薄膜的一部分经受热激发。 使磁性薄膜的部分呈现与选择性其他部分不同的磁性。 还公开了在介质两侧用磁性薄膜图案化磁性介质的方法。
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公开(公告)号：US20090199768A1
公开(公告)日：2009-08-13
申请号：US12029601
申请日：2008-02-12
摘要： A method for defining magnetic domains in a magnetic thin film on a substrate, includes: coating the magnetic thin film with a resist; patterning the resist, wherein areas of the magnetic thin film are substantially uncovered; and exposing the magnetic thin film to a plasma, wherein plasma ions penetrate the substantially uncovered areas of the magnetic thin film, rendering the substantially uncovered areas non-magnetic. A tool for this process comprises: a vacuum chamber held at earth potential; a gas inlet valve configured to leak controlled amounts of gas into the chamber; a disk mounting device configured to (1) fit within the chamber, (2) hold a multiplicity of disks, spacing the multiplicity of disks wherein both sides of each of the multiplicity of disks is exposed and (3) make electrical contact to the multiplicity of disks; and a radio frequency signal generator electrically coupled to the disk mounting device and the chamber, whereby a plasma can be ignited in the chamber and the disks are exposed to plasma ions uniformly on both sides.
摘要翻译： 一种用于在基板上的磁性薄膜中定义磁畴的方法，包括：用抗蚀剂涂覆磁性薄膜; 图案化抗蚀剂，其中磁性薄膜的面积基本上未被覆盖; 并将该磁性薄膜暴露于等离子体，其中等离子体离子穿透该磁性薄膜的基本未覆盖的区域，使得基本上未覆盖的区域成为非磁性的。 用于该方法的工具包括：保持在地电位的真空室; 配置为将受控量的气体泄漏到所述室中的气体入口阀; 一种盘安装装置，其被配置为（1）装配在所述室内，（2）保持多个盘，将多个盘间隔开，其中，多个盘中的每一个的两侧暴露，以及（3） 的磁盘; 以及电耦合到盘安装装置和室的射频信号发生器，由此等离子体可以在腔室中点燃，并且盘在两侧均匀地暴露于等离子体离子。
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公开(公告)号：US08535766B2
公开(公告)日：2013-09-17
申请号：US12255833
申请日：2008-10-22
CPC分类号： G11B5/84 , C23C14/185 , C23C14/48 , C23C14/5826 , C23C14/5833 , G11B5/855 , H01J2237/3365
摘要： A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.
摘要翻译： 用于在衬底上图案化磁性薄膜的方法包括：提供围绕磁性薄膜的图案，该图案的选择区域允许一个或多个元件的激发离子的穿透。 通过足够的能量产生通电的离子以穿透选择区域和一部分与选择区域相邻的磁性薄膜。 放置基板以接收通电离子。 使磁性薄膜的部分呈现与选择性其他部分不同的磁性。 还公开了在介质两侧用磁性薄膜图案化磁性介质的方法。
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公开(公告)号：US20100098873A1
公开(公告)日：2010-04-22
申请号：US12255833
申请日：2008-10-22
IPC分类号： C23C14/48
CPC分类号： G11B5/84 , C23C14/185 , C23C14/48 , C23C14/5826 , C23C14/5833 , G11B5/855 , H01J2237/3365
摘要： A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.
摘要翻译： 用于在衬底上图案化磁性薄膜的方法包括：提供围绕磁性薄膜的图案，该图案的选择区域允许一个或多个元件的激发离子的穿透。 通过足够的能量产生通电的离子以穿透选择区域和一部分与选择区域相邻的磁性薄膜。 放置基板以接收通电离子。 使磁性薄膜的部分呈现与选择性其他部分不同的磁性。 还公开了在介质两侧用磁性薄膜图案化磁性介质的方法。
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7.发明授权公开(公告)号：US08551578B2
公开(公告)日：2013-10-08
申请号：US12255865
申请日：2008-10-22
摘要： A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.
摘要翻译： 用于在衬底上图案化磁性薄膜的方法包括：提供围绕磁性薄膜的图案，该图案的选择区域允许一个或多个元件的激发离子的穿透。 通过足够的能量产生通电的离子以穿透选择区域和一部分与选择区域相邻的磁性薄膜。 放置基板以接收通电离子。 磁性薄膜的一部分经受热激发。 使磁性薄膜的部分呈现与选择性其他部分不同的磁性。 还公开了在介质两侧用磁性薄膜图案化磁性介质的方法。
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公开(公告)号：US20100101829A1
公开(公告)日：2010-04-29
申请号：US12258263
申请日：2008-10-24
CPC分类号： H01L31/022425 , G02F1/13439 , H01B1/02 , H01B1/08 , H01L31/022475 , H01L31/022483 , H01L31/1884 , H05K1/097 , Y02E10/50 , Y10T29/49155
摘要： This invention provides an optically transparent conductive layer with a desirable combination of low electrical sheet resistance and good optical transparency. The conductive layer comprises a multiplicity of magnetic nanowires in a plane, the nanowires being aligned roughly (1) parallel to each other and (2) with the long axes of the nanowires in the plane of the layer, the nanowires further being configured to provide a plurality of continuous conductive pathways, and wherein the density of the multiplicity of magnetic nanowires allows for substantial optical transparency of the conductive layer. Furthermore, the conductive layer can include an optically transparent continuous conductive film, wherein the multiplicity of magnetic nanowires are electrically connected to the continuous conductive film. A method of forming the conductive layer on a substrate includes: depositing a multiplicity of magnetic conductive nanowires on the substrate and applying a magnetic field to form the nanowires into a plurality of conductive pathways parallel to the surface of the substrate.
摘要翻译： 本发明提供了具有低电薄片电阻和良好的光学透明度的期望组合的光学透明导电层。 导电层在平面中包括多个磁性纳米线，纳米线大致（1）彼此平行对准，（2）与该层的平面中的纳米线的长轴对准，纳米线还被配置成提供 多个连续导电路径，并且其中多个磁性纳米线的密度允许导电层的实质的光学透明度。 此外，导电层可以包括光学透明的连续导电膜，其中多个磁性纳米线电连接到连续导电膜。 在衬底上形成导电层的方法包括：在衬底上沉积多个导电纳米线并施加磁场以形成平行于衬底表面的多个导电通路中的纳米线。
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公开(公告)号：US20100267191A1
公开(公告)日：2010-10-21
申请号：US12763856
申请日：2010-04-20
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , C23C16/4485 , C23C16/45565 , H01L31/03923
摘要： The present invention generally provides a method for forming a photovoltaic device including evaporating a source material to form a large molecule processing gas and flowing the large molecule processing gas through a gas distribution showerhead and into a processing area of a processing chamber having a substrate therein. The method includes generating a small molecule processing gas, and reacting the small molecule processing gas with a film already deposited on a substrate surface to form a semiconductor film. Additionally, apparatuses that may use the methods are also provided to enable continuous inline CIGS type solar cell formation.
摘要翻译： 本发明通常提供一种形成光伏器件的方法，包括蒸发源材料以形成大分子加工气体，并使大分子处理气体通过气体分配喷头流入其中具有衬底的处理室的处理区域。 该方法包括生成小分子处理气体，并使小分子处理气体与已沉积在基板表面上的膜反应形成半导体膜。 此外，还可以使用可以使用这些方法的装置来实现连续的在线CIGS型太阳能电池的形成。
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10.发明申请SULFURIZATION OR SELENIZATION IN MOLTEN (LIQUID) STATE FOR THE PHOTOVOLTAIC APPLICATIONS 审中-公开用于光伏应用的液体（液体）状态的硫化或放电公开(公告)号：US20100255660A1
公开(公告)日：2010-10-07
申请号：US12755203
申请日：2010-04-06
申请人： Kaushal K. Singh , Ralf Hofmann , Nety M. Krishna
发明人： Kaushal K. Singh , Ralf Hofmann , Nety M. Krishna
IPC分类号： H01L21/363
CPC分类号： H01L21/02568 , C23C14/025 , C23C14/165 , C23C14/185 , C23C14/5866 , H01L21/02551 , H01L21/02565 , H01L21/02614 , H01L31/0322 , Y02E10/541
摘要： A method of forming a solar cell incorporating a compound semiconductor is provided. The compound semiconductor is generally of the “II/VI” variety, and is formed by depositing one or more group II elements in a vapor deposition process, and then contacting the deposited layer with a liquid bath of the group VI elements. The liquid bath may comprise a pure element or a mixture of elements. The contacting is performed under a non-reactive atmosphere, or vacuum, and any fugitive vapors may be captured by a cold trap and recycled. The substrate may be subsequently annealed to remove any excess of the group VI elements, which may be similarly recycled.
摘要翻译： 提供一种形成包含化合物半导体的太阳能电池的方法。 化合物半导体通常为“II / VI”，并且通过在气相沉积工艺中沉积一个或多个II族元素，然后使沉积层与VI族元素的液槽接触而形成。 液体浴可以包含纯元素或元素的混合物。 接触在非反应性气氛或真空下进行，并且任何逸出的蒸气可能被冷阱捕获并再循环。 可以随后将基材退火以除去任何过量的可以类似地再循环的VI族元素。
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