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公开(公告)号：US5565249A
公开(公告)日：1996-10-15
申请号：US57823
申请日：1993-05-07
CPC分类号： C23C16/276 , H05H1/48 , H05H2001/3426 , H05H2001/3452
摘要： A process for gas phase synthesis of diamond using a DC plasma jet where a plasma jet generated by DC arc discharge using a DC plasma torch is made to strike a substrate and grow diamond on the substrate, wherein use is made of a plurality of plasma torch anodes, these are arranged coaxially in a telescoped structure, a magnetic field is applied to these in accordance with need to cause the arc to rotate or the electrode is rotated so as to perform gas phase synthesis of diamond.
摘要翻译： 使用DC等离子体射流进行气相合成金刚石的方法，其中使用DC等离子体焰炬通过直流电弧放电产生的等离子体射流进行冲击，并在衬底上生长金刚石，其中使用多个等离子体焰炬 阳极，它们同轴地布置在可伸缩结构中，根据需要使电弧旋转或电极旋转以对金刚石进行气相合成，施加磁场。
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公开(公告)号：US5338364A
公开(公告)日：1994-08-16
申请号：US994287
申请日：1992-12-21
CPC分类号： C23C4/04 , C23C16/27 , C23C16/30 , C23C16/453 , C23C4/12
摘要： A process and apparatus for producing a diamond film from a gas phase, in which a fuel gas is burnt by oxygen gas in a torch, to thereby provide a gas flame jet having a high temperature and high speed sufficient to form a high quality diamond film on a substrate, by an unlimited use of various kinds of combustible carbon compound gases as the fuel gas. A process and apparatus for producing a diamond film from a gas phase, in which a thermal spray material is fed to a combustion flame to thereby form an intermediate layer of a mixture of the thermal spray material and diamond between a substrate and a diamond film, to thereby provide a high purity diamond film having an improved adhesion to the substrate.
摘要翻译： 一种用于从气相制备金刚石膜的方法和装置，其中燃料气体被焊炬中的氧气燃烧，从而提供具有足以形成高质量金刚石膜的高温和高速的气体火焰喷射 在基板上，通过不限制地使用各种可燃碳化合物气体作为燃料气体。 一种用于从气相制备金刚石膜的方法和装置，其中热喷涂材料被供给到燃烧火焰，从而在基材和金刚石膜之间形成热喷涂材料和金刚石的混合物的中间层， 从而提供具有改进的与基底的粘附性的高纯度金刚石膜。
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公开(公告)号：US5368897A
公开(公告)日：1994-11-29
申请号：US177504
申请日：1988-04-04
IPC分类号： C23C16/27 , C23C16/513 , C30B25/02 , B05D1/02
CPC分类号： C23C16/276 , C23C16/277 , C23C16/513 , C30B25/02 , C30B29/04
摘要： A method for vapor deposition of diamond by effecting an arc discharge while feeding a discharge gas between an anode and a cathode of a thermal plasma chemical vapor deposition device, radicalizing a gaseous carbon compound by feeding the gaseous carbon compound into a generated plasma jet, and permitting the radicalized plasma jet to impinge on a substrate to be treated, whereby a film of diamond is formed on the substrate.
摘要翻译： 一种用于通过在热等离子体化学气相沉积装置的阳极和阴极之间供给放电气体的同时进行电弧放电的金刚石气相沉积的方法，通过将气态碳化合物供给到产生的等离子体射流中使气态碳化合物自由基化;以及 允许激进化的等离子体射流撞击待处理的基底，由此在基底上形成金刚石膜。
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公开(公告)号：US5538765A
公开(公告)日：1996-07-23
申请号：US417787
申请日：1995-04-05
CPC分类号： C23C16/276 , H05H1/48 , H05H2001/3426 , H05H2001/3452
摘要： A process for producing diamond includes a step of bringing a columnar cathode and a tubular pilot anode provided concentrically around the cathode, into proximity to a plasma jetting port of a front end portion of a tubular main anode provided concentrically around the pilot anode. According to the process, a voltage is applied across the cathode and the pilot anode to convert a pilot gas to the form of a plasma. Then, the cathode is moved away from the pilot anode along a common axis. The process also includes the step of holding the discharge voltage between the cathode and the pilot anode at a first preselected voltage, and then applying voltage across the cathode and the main anode to convert a main gas to the form of a plasma. Subsequently, at least the pilot anode is moved away from the main anode along the common axis while maintaining the discharge voltage between the cathode and the pilot anode at the first preselected voltage. The process further includes the steps of holding the discharge voltage between the cathode and the main anode at a second preselected voltage and jetting the main gas in the form of plasma from the jetting port while generating a main arc between the main anode and the cathode.
摘要翻译： 制造金刚石的方法包括使围绕阴极同心设置的柱状阴极和管状引导阳极接近于围绕导向阳极同心设置的管状主阳极的前端部分的等离子体喷射口的步骤。 根据该过程，跨越阴极和导向阳极施加电压以将导向气体转换为等离子体的形式。 然后，阴极沿着公共轴线从导向阳极移开。 该方法还包括以第一预选电压在阴极和导向阳极之间保持放电电压，然后在阴极和主阳极上施加电压以将主气体转换成等离子体的形式的步骤。 随后，至少引导阳极沿着公共轴线从主阳极移开，同时在第一预选电压下保持阴极和导向阳极之间的放电电压。 该方法还包括以下步骤：以第二预选电压在阴极和主阳极之间保持放电电压，并且在主阳极和阴极之间产生主电弧的同时从喷射口喷射等离子体形式的主气体。
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公开(公告)号：US5403399A
公开(公告)日：1995-04-04
申请号：US905226
申请日：1992-06-29
IPC分类号： C23C16/27 , C23C16/513 , C30B25/02 , C23C16/00
CPC分类号： C23C16/276 , C23C16/277 , C23C16/513 , C30B25/02 , C30B29/04
摘要： An apparatus for a vapor deposition of diamond by:effecting an arc discharge while feeding a discharge gas between an anode and a cathode of a thermal plasma chemical vapor deposition device;radicalizing a gaseous carbon compound by feeding the gaseous carbon compound to a generated plasma jet; andpermitting said radicalized plasma jet to impinge on a substrate to be treated, whereby a film of diamond is formed on said substrate.
摘要翻译： 一种用于通过以下方式气相沉积金刚石的装置：在热等离子体化学气相沉积装置的阳极和阴极之间施加放电气体的同时进行电弧放电; 通过将气态碳化合物供给到所产生的等离子体射流中而使气态碳化合物自由基化; 并且允许所述激进化的等离子体射流撞击在待处理的基底上，由此在所述基底上形成金刚石膜。
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公开(公告)号：US5217700A
公开(公告)日：1993-06-08
申请号：US806246
申请日：1991-12-13
IPC分类号： C23C4/04 , C23C4/12 , C23C16/27 , C23C16/30 , C23C16/453
CPC分类号： C23C4/04 , C23C16/27 , C23C16/30 , C23C16/453 , C23C4/12
摘要： A process and apparatus for producing a diamond film from a gas phase, in which a fuel gas is burnt by oxygen gas in a torch, to thereby provide a gas flame jet having a high temperature and high speed sufficient to form a high quality diamond film on a substrate, by an unlimited use of various kinds of combustible carbon compound gases as the fuel gas. A process and apparatus for producing a diamond film from a gas phase, in which a thermal spray material is fed to a combustion flame to thereby form an intermediate layer of a mixture of the thermal spray material and diamond between a substrate and a diamond film, to thereby provide a high purity diamond film having an improved adhesion to the substrate.
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公开(公告)号：US06248400B1
公开(公告)日：2001-06-19
申请号：US08912369
申请日：1997-08-18
IPC分类号： C23C1627
CPC分类号： C23C16/01 , C23C16/276 , H04R31/003 , H04R2307/023
摘要： A DC plasma jet CVD process having a high film deposition rate is employed. A material having low adhesion with diamond is used for a substrate. A diamond film automatically peels from the substrate at the time of cooling. Gas is recycled because gas utilization efficiency is low. In this case, deposition of carbon can be prevented by setting a gas flow velocity to at least 5 m/s in the proximity of an anodic point.
摘要翻译： 采用具有高膜沉积速率的DC等离子体喷射CVD工艺。 与金刚石具有低粘合性的材料用于基材。 在冷却时，金刚石膜从基材自动剥离。 由于天然气利用效率低，气体被回收利用。 在这种情况下，通过将阳极点附近的气体流速设定为至少5m / s，可以防止碳沉积。
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公开(公告)号：US08648564B2
公开(公告)日：2014-02-11
申请号：US13608033
申请日：2012-09-10
申请人： Kenichi Sasaki
发明人： Kenichi Sasaki
摘要： According to an embodiment, a power transmitting device includes a power supply unit, a power transmitting coil, a first switch, a piezoelectric element, and a first switch controller. The power supply unit is configured to generate a transmission power by using power supplied to a power input terminal. Once the first switch is turned on, the first switch electrically connects an external power supply and the power input terminal until the first switch is turned off next time. The piezoelectric element is disposed at a position at which a weight of a placed power receiving device can be detected. The piezoelectric element is configured to generate a detection power according to the weight of the placed power receiving device. The first switch controller is configured to generate a starting power by the detection power and switches the first switch to on by using the starting power.
摘要翻译： 根据实施例，电力传输装置包括电源单元，发电线圈，第一开关，压电元件和第一开关控制器。 电源单元被配置为通过使用提供给电力输入端子的电力来产生发送功率。 一旦第一开关接通，第一开关将外部电源和电源输入端子电连接，直到第一个开关下一次关闭。 压电元件设置在可以检测放置的受电装置的重量的位置。 压电元件被配置为根据放置的电力接收装置的重量产生检测功率。 第一开关控制器被配置为通过检测功率产生启动功率，并通过使用起动功率将第一开关切换到接通状态。
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公开(公告)号：US20130032942A1
公开(公告)日：2013-02-07
申请号：US13553084
申请日：2012-07-19
申请人： Kenichi Sasaki , Norio Fukasawa
发明人： Kenichi Sasaki , Norio Fukasawa
IPC分类号： H01L23/498 , H01L23/48
CPC分类号： H01L24/80 , H01L23/495 , H01L23/49575 , H01L23/49811 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/81 , H01L24/85 , H01L24/92 , H01L25/0657 , H01L2224/0401 , H01L2224/04042 , H01L2224/06135 , H01L2224/06136 , H01L2224/0614 , H01L2224/06177 , H01L2224/1134 , H01L2224/13082 , H01L2224/16145 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/45144 , H01L2224/48227 , H01L2224/49171 , H01L2224/73207 , H01L2224/73253 , H01L2224/73265 , H01L2224/81191 , H01L2224/81395 , H01L2224/8149 , H01L2224/81901 , H01L2224/8592 , H01L2224/92163 , H01L2225/0651 , H01L2225/06575 , H01L2924/00014 , H01L2924/01327 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
摘要： A semiconductor device includes a circuit substrate, a first semiconductor chip disposed on the circuit substrate, a plurality of first spacers disposed on the first semiconductor chip, a second semiconductor chip which includes a first adhesive agent layer on a lower face thereof and is disposed on upper portions of the plurality of spacers, a wire which connects the circuit substrate to the first semiconductor chip, and a first sealing material which seals a gap between the first semiconductor chip and the first adhesive agent layer, wherein each height of the plurality of the first spacers is greater than height of the wire relative to an upper face of the first semiconductor chip.
摘要翻译： 半导体器件包括电路基板，布置在电路基板上的第一半导体芯片，设置在第一半导体芯片上的多个第一间隔物，第二半导体芯片，其下表面上包括第一粘合剂层， 多个间隔物的上部，将电路基板连接到第一半导体芯片的线以及密封第一半导体芯片和第一粘合剂层之间的间隙的第一密封材料，其中， 第一间隔物相对于第一半导体芯片的上表面大于导线的高度。
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公开(公告)号：US20120002216A1
公开(公告)日：2012-01-05
申请号：US13256375
申请日：2010-03-08
申请人： Takeshi Shibata , Kenichi Sasaki
发明人： Takeshi Shibata , Kenichi Sasaki
IPC分类号： G01B11/14
CPC分类号： B25J9/1692 , G05B2219/40601 , G05B2219/40623 , H01L21/67766 , H01L21/67778 , H01L21/681 , H01L21/68707
摘要： The invention provides a robot including a connection member relatively displaceably connected, and configured to control the displacement of the connection member based on a reference posture that can be adjusted, the robot including: a light emitting unit to emit a laser beam in a predetermined direction; a light receiving unit to receive the laser beam when the connection member is located in a detection posture that is away, by a preset displacement amount, from a predetermined zero posture; and a zeroing unit to relatively displace the connection member so as to make the light receiving unit receive the laser beam, and then to adjust the reference posture to the zero posture based on the posture of the connection member when the laser beam is received as well as on a relationship between the zero posture and the detection posture.
摘要翻译： 本发明提供了一种机器人，其包括相对可移动地连接的连接构件，并且被配置为基于可调节的参考姿势来控制连接构件的位移，所述机器人包括：发光单元，用于沿预定方向发射激光束 ; 光接收单元，当所述连接构件位于从预定的位移量处于预定的零位置的检测姿势中时，接收所述激光束; 以及调零单元，以使连接构件相对移位，以使光接收单元接收激光束，然后基于接收激光束时的连接构件的姿态将基准姿势调整为零姿势 作为零姿势与检测姿势之间的关系。
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