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    Image printer for controlling the shape of pixels based upon correlation values
    2.
    发明授权
    Image printer for controlling the shape of pixels based upon correlation values 失效
    图像打印机，用于基于相关值控制像素的形状

    公开(公告)号：US06459470B1

    公开(公告)日：2002-10-01

    申请号：US09344498

    申请日：1999-06-25

    申请人： Kenji Iwano ,  Hiroshi Akahori ,  Kunio Nobori ,  Kazuhiro Kayashima ,  Makoto Fujimoto ,  Yasuhito Kawamata

    发明人： Kenji Iwano ,  Hiroshi Akahori ,  Kunio Nobori ,  Kazuhiro Kayashima ,  Makoto Fujimoto ,  Yasuhito Kawamata

    IPC分类号： G03B2732

    CPC分类号： H04N1/00

    摘要： An image printer for printing images with less cross-talk between images and less image flickering is provided. A plurality of images are interleft in one or a plurality of line units and a lenticular lens is used to make it possible for each individual pixel to be distinguished. The difference in brightness between an attentional pixel and the surrounding pixels that surround this attentional pixel is taken, and a correlation value is produced, the correlation value being reduced if the difference is large and increased if the difference is small. The image printer is equipped with a pixel shape controller that makes the printed pixels smaller in a region where the correlation value is low, and makes the printed pixels larger in a region where the correlation value is high.

    摘要翻译： 提供了一种图像打印机，用于打印图像之间较少串扰的图像和较少的图像闪烁。 多个图像在一个或多个行单元中进行交织，并且使用双凸透镜来使每个单独的像素可以被区分。 拍摄注意像素与围绕该注意像素的周围像素之间的亮度差异，并且产生相关值，如果该差异较大则相关值减小，并且如果该差小则增加相关值。 图像打印机配备有像素形状控制器，其在相关值低的区域中使印刷像素更小，并且使相对于相关值高的区域中的印刷像素较大。

    Image motion vector detecting device and swing correcting device
    3.
    发明授权
    Image motion vector detecting device and swing correcting device 失效
    图像运动矢量检测装置和旋转校正装置

    公开(公告)号：US5237405A

    公开(公告)日：1993-08-17

    申请号：US700519

    申请日：1991-05-15

    申请人： Yo Egusa ,  Hiroshi Akahori ,  Atsushi Morimura

    发明人： Yo Egusa ,  Hiroshi Akahori ,  Atsushi Morimura

    IPC分类号： G06T7/20 ,  H04N5/14 ,  H04N5/232 ,  H04N7/26

    CPC分类号： H04N19/51 ,  G06T7/2006 ,  G06T7/2013 ,  H04N19/527 ,  H04N5/145 ,  H04N5/23248 ,  H04N5/23254 ,  H04N5/23264 ,  G06T2207/10016

    摘要： An image motion vector detecting device has a part for determining correlation values in specific deviation in each detecting region of disposed plural detecting regions in a screen, a part for determining a time variation value of the correlation values, a part for determining a motion vector in each detecting region from the correlation values, a part for judging a reliability of the motion vector in each detecting region by using the correlation values and the time variation value, and a part for determining a motion vector of an entire screen by using the motion vector of each region on the basis of the judged reliability.

    摘要翻译： 在图像运动矢量检测装置中，具有用于确定画面中的多个检测区域的各检测区域的各检测区域的特定偏差的相关值的部分（3），用于确定相关值的时间变化值的部分（4） （2），用于根据相关值确定每个检测区域中的运动矢量;以及部分（5），用于通过使用相关值和时间变化值来判断每个检测区域中的运动矢量的可靠性;以及部分（6） 用于基于所判断的可靠性通过使用每个区域的运动矢量来确定整个屏幕的运动矢量。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20120018780A1

    公开(公告)日：2012-01-26

    申请号：US13075665

    申请日：2011-03-30

    申请人： Kazuaki Iwasawa ,  Shigeo Kondo ,  Hiroshi Akahori ,  Kiyohito Nishihara ,  Yingkang Zhang ,  Masaki Kondo ,  Hidenobu Nagashima ,  Takashi Ichikawa

    发明人： Kazuaki Iwasawa ,  Shigeo Kondo ,  Hiroshi Akahori ,  Kiyohito Nishihara ,  Yingkang Zhang ,  Masaki Kondo ,  Hidenobu Nagashima ,  Takashi Ichikawa

    IPC分类号： H01L29/772 ,  H01L21/28

    CPC分类号： H01L27/11521

    摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor device. A side face parallel to a channel direction of a plurality of gate electrodes provided via a gate insulating film above a semiconductor substrate is included as a part of an inner wall of an isolation groove provided between the adjacent gate electrodes. The method can include forming a protection film covering the side face of the gate electrode. The method can include etching the semiconductor substrate using the gate electrode as a mask to form the isolation groove. The side face of the gate electrode is covered with the protection film. The method can include forming a first insulating film by oxidizing a surface of the isolation groove to fill a bottom portion of the isolation groove. In addition, the method can include forming a second insulating film on the first insulating film to fill an upper portion of the isolation groove including the side face of the gate electrode.

    摘要翻译： 根据一个实施例，公开了一种用于制造半导体器件的方法。 作为设置在相邻栅电极之间的隔离槽的内壁的一部分，包括平行于通过半导体基板上方的栅极绝缘膜设置的多个栅电极的沟道方向的侧面。 该方法可以包括形成覆盖栅电极的侧面的保护膜。 该方法可以包括使用栅电极作为掩模来蚀刻半导体衬底以形成隔离槽。 栅电极的侧面被保护膜覆盖。 该方法可以包括通过氧化隔离槽的表面来填充隔离槽的底部来形成第一绝缘膜。 此外，该方法可以包括在第一绝缘膜上形成第二绝缘膜以填充包括栅电极的侧面的隔离槽的上部。

    Nonvolatile semiconductor memory and method of manufacturing the same
    7.
    发明申请
    Nonvolatile semiconductor memory and method of manufacturing the same 有权
    非易失性半导体存储器及其制造方法

    公开(公告)号：US20110020995A1

    公开(公告)日：2011-01-27

    申请号：US12923646

    申请日：2010-09-30

    申请人： Hiroshi Akahori ,  Wakako Takeuchi

    发明人： Hiroshi Akahori ,  Wakako Takeuchi

    IPC分类号： H01L21/22

    CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11524

    摘要： A nonvolatile semiconductor memory has a semiconductor substrate, a first insulating film formed on a channel region on a surface portion of the semiconductor substrate, a charge accumulating layer formed on the first insulating film, a second insulating film formed on the charge accumulating layer, a control gate electrode formed on the second insulating film, and a third insulating film including an Si—N bond that is formed on a bottom surface and side surfaces of the charge accumulating layer.

    摘要翻译： 非易失性半导体存储器具有半导体衬底，形成在半导体衬底的表面部分上的沟道区上的第一绝缘膜，形成在第一绝缘膜上的电荷累积层，形成在电荷累积层上的第二绝缘膜， 形成在第二绝缘膜上的控制栅电极和形成在电荷累积层的底表面和侧表面上的包含Si-N键的第三绝缘膜。

    Nonvolatile semiconductor memory device and method of manufacturing the same
    8.
    发明授权
    Nonvolatile semiconductor memory device and method of manufacturing the same 失效
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US07821056B2

    公开(公告)日：2010-10-26

    申请号：US11902290

    申请日：2007-09-20

    申请人： Hiroshi Akahori ,  Wakako Takeuchi

    发明人： Hiroshi Akahori ,  Wakako Takeuchi

    IPC分类号： H01L29/76

    CPC分类号： H01L21/32134 ,  H01L21/32115 ,  H01L27/115 ,  H01L27/11521

    摘要： A nonvolatile semiconductor memory device includes an array of nonvolatile memory cell transistors, each of which is configured such that a tunnel insulation film, a floating gate electrode, a floating gate insulation film and a control gate electrode are stacked on a surface of a semiconductor substrate. A mean roughness of an interface between a polysilicon, of which the floating gate electrode is formed, and the floating gate insulation film is 1.5 nm or less.

    摘要翻译： 非易失性半导体存储器件包括非易失性存储单元晶体管阵列，每个非易失性存储单元晶体管被配置为使得隧道绝缘膜，浮栅电极，浮栅绝缘膜和控制栅电极堆叠在半导体衬底的表面上 。 形成浮栅的多晶硅与浮栅绝缘膜之间的界面的平均粗糙度为1.5nm以下。

    Manufacturing method of a nonvolatile semiconductor memory device
    9.
    发明授权
    Manufacturing method of a nonvolatile semiconductor memory device 失效
    非易失性半导体存储器件的制造方法

    公开(公告)号：US07651914B2

    公开(公告)日：2010-01-26

    申请号：US12176559

    申请日：2008-07-21

    申请人： Hiroshi Akahori ,  Wakako Takeuchi ,  Yoshio Ozawa

    发明人： Hiroshi Akahori ,  Wakako Takeuchi ,  Yoshio Ozawa

    IPC分类号： H01L21/336 ,  H01L21/3205 ,  H01L21/28

    CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/513

    摘要： A manufacturing method of a nonvolatile semiconductor memory device including: providing a first insulating film and a silicon film on a semiconductor substrate; providing a fifth insulating film containing silicon and oxygen on the silicon film; providing a second insulating film containing silicon and nitrogen on the fifth insulating film; providing a third insulating film on the second insulating film, the third insulating film is composed of a single-layer insulating film containing oxygen or multiple-layer stacked insulating film at least whose films on a top layer and a bottom layer contain oxygen, and relative dielectric constant of the single-layer insulating film and the stacked insulating film being larger than relative dielectric constant of a silicon oxide film; providing a fourth insulating film containing silicon and nitrogen on the third insulating film; and providing a control gate above the fourth insulating film.

    摘要翻译： 一种非易失性半导体存储器件的制造方法，包括：在半导体衬底上提供第一绝缘膜和硅膜; 在硅膜上提供含有硅和氧的第五绝缘膜; 在第五绝缘膜上提供含有硅和氮的第二绝缘膜; 在所述第二绝缘膜上提供第三绝缘膜，所述第三绝缘膜由包含氧或多层堆叠绝缘膜的单层绝缘膜组成，所述单层绝缘膜至少其顶层和底层上的膜含有氧，并且相对 单层绝缘膜和叠层绝缘膜的介电常数大于氧化硅膜的相对介电常数; 在所述第三绝缘膜上提供含有硅和氮的第四绝缘膜; 以及在所述第四绝缘膜上方设置控制栅极。

    Method for Manufacturing Backside-Illuminated Optical Sensor
    10.
    发明申请
    Method for Manufacturing Backside-Illuminated Optical Sensor 有权
    制造背面照明光学传感器的方法

    公开(公告)号：US20070275488A1

    公开(公告)日：2007-11-29

    申请号：US10553231

    申请日：2004-04-14

    申请人： Hiroya Kobayashi ,  Hiroshi Akahori ,  Masaharu Muramatsu

    发明人： Hiroya Kobayashi ,  Hiroshi Akahori ,  Masaharu Muramatsu

    IPC分类号： H01L21/02

    CPC分类号： H01L27/14618 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14812 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A CCD portion 3 is formed on a front surface side of a semiconductor substrate 1. A region of a back surface side of semiconductor substrate 1 that corresponds to CCD portion 3 is thinned while leaving peripheral regions 1a of the region, and an accumulation layer 5 is formed on the back surface side of semiconductor substrate 1. An electrical wiring 7, which is electrically connected to CCD portion 3, and an electrode pad 9, which is electrically connected to electrical wiring 7, are then formed on a region 1b of the front surface side of semiconductor substrate 1 that corresponds to a peripheral region 1a, and a supporting substrate 11 is adhered onto the front surface side of semiconductor substrate 1 so as to cover CCD portion 3 while leaving electrode pad 9 exposed. Semiconductor substrate 1 and supporting substrate 11 are then cut at a thinned portion of semiconductor substrate 1 so as to leave peripheral region 1a corresponding to region 1b at which electrical wiring 7 and electrode pad 9 are formed.

    摘要翻译： CCD部3形成在半导体基板1的正面侧。半导体基板1的与CCD部3对应的背面侧的区域变薄，同时留下该区域的周边区域1a，并且累积层 5形成在半导体基板1的背面侧。然后，在区域1b上形成电连接到CCD部分3的电布线7和电连接到电线7的电极焊盘9 的半导体衬底1的表面侧，并且将支撑衬底11粘附到半导体衬底1的前表面侧，以覆盖CCD部3，同时使电极焊盘9露出。 然后在半导体衬底1的薄化部分处切割半导体衬底1和支撑衬底11，以便留下对应于形成电布线7和电极焊盘9的区域1b的周边区域1a。