公开(公告)号：US4404539A

公开(公告)日：1983-09-13

申请号：US236934

申请日：1981-02-23

申请人： Kazuji Yamada ,  Motohisa Nishihara ,  Hideo Sato ,  Seiko Suzuki ,  Ryoichi Kobayashi

发明人： Kazuji Yamada ,  Motohisa Nishihara ,  Hideo Sato ,  Seiko Suzuki ,  Ryoichi Kobayashi

IPC分类号： G01L9/04 ,  G01L9/00 ,  G01L9/06 ,  H01L29/84 ,  G01L1/22

CPC分类号： G01L9/0054 ,  G01L9/065

摘要： A semiconductor strain gauge is arranged as a bridge having four piezoresistive elements which each include a low impurity concentration diffused portion and a heavily-doped diffused portion. The resistance values of the two low impurity concentration diffused portions opposite each other in the bridge are greater than the resistance values of the other two lower impurity concentration portions. The resistances of the heavily-doped diffused portion are selected so that the resistance of the piezoresistive elements are equal. However, by virtue of the fact that the resistance temperature coefficient of the low impurity portions are greater than the resistance temperature coefficients of the high impurity portions, the overall resistance temperature coefficients of the bridge arms will be different. This permits the zero-point voltage of the bridge to always increase with an increase in temperature.

摘要翻译： 半导体应变仪布置为具有四个压阻元件的桥，每个压阻元件包括低杂质浓度扩散部分和重掺杂扩散部分。 在桥中彼此相对的两个低杂质浓度扩散部分的电阻值大于其它两个较低杂质浓度部分的电阻值。 选择重掺杂扩散部分的电阻，使得压阻元件的电阻相等。 然而，由于低杂质部分的电阻温度系数大于高杂质部分的电阻温度系数，所以桥臂的整体电阻温度系数将不同。 这允许桥接器的零点电压总是随着温度的升高而增加。

公开(公告)号：US4291293A

公开(公告)日：1981-09-22

申请号：US76813

申请日：1979-09-19

申请人： Kazuji Yamada ,  Seiko Suzuki ,  Motohisa Nishihara ,  Kanji Kawakami ,  Hideo Sato ,  Shigeyuki Kobori ,  Ryosaku Kanzawa ,  Minoru Takahashi ,  Hitoshi Minorikawa

发明人： Kazuji Yamada ,  Seiko Suzuki ,  Motohisa Nishihara ,  Kanji Kawakami ,  Hideo Sato ,  Shigeyuki Kobori ,  Ryosaku Kanzawa ,  Minoru Takahashi ,  Hitoshi Minorikawa

IPC分类号： G01L9/04 ,  G01L9/00 ,  H01L23/08 ,  H01L29/84 ,  G01L1/22

CPC分类号： G01L9/0042 ,  G01L9/0054

摘要： A semiconductor pressure transducer assembly comprising a silicon diaphragm assembly and a glass covering member. The silicon diaphragm assembly has a circular diaphragm portion of thin silicon which is formed using etching, and a thick supporting portion therearound. Piezoresistive elements of a piezoresistive bridge circuit and conducting paths for electrically connection thereof are formed on the silicon diaphragm assembly. On a surface of the silicon diaphragm assembly, a passivating layer of silicon dioxide are formed in uniform thickness, and further on a surface of the passivating layer is formed a layer of polysilicon on the supporting portion of the silicon diaphragm assembly. In the passivating layer, a contacting window is formed, through which the polysilicon layer is electrically connected to the silicon diaphragm assembly. The covering member of borosilicate glass having a circular well is mounted and bonded onto the silicon diaphragm assembly in contact with the polysilicon layer using Anodic Bonding method. And the processed silicon diaphragm assembly has a flat surface thereof, on which the piezoresistive elements and the conducting paths are constructed using Ion Implantation method, or reforming a silicon dioxide layer thereon after removing another silicon dioxide layer used as mask in diffusing process.

摘要翻译： 一种半导体压力传感器组件，包括硅膜组件和玻璃覆盖件。 硅膜组件具有通过蚀刻形成的薄硅的圆形隔膜部分和其周围的厚的支撑部分。 在硅膜组件上形成压阻电桥电路的压阻元件和用于电连接的导电路径。 在硅膜组件的表面上形成均匀厚度的二氧化硅钝化层，并且在钝化层的表面上进一步在硅膜组件的支撑部分上形成多晶硅层。 在钝化层中，形成接触窗，多晶硅层通过该接触窗电连接到硅膜组件。 使用阳极接合方法将具有圆形孔的硼硅酸盐玻璃的覆盖部件安装并接合到与硅多晶硅层接触的硅膜组件上。 并且经处理的硅膜组件具有平坦的表面，在其上使用离子注入方法构建压阻元件和导电路径，或者在去除扩散过程中用作掩模的另一二氧化硅层之后重新形成二氧化硅层。

公开(公告)号：US4480478A

公开(公告)日：1984-11-06

申请号：US466027

申请日：1983-02-14

申请人： Hideo Sato ,  Motohisa Nishihara ,  Kazuji Yamada ,  Seikou Suzuki

发明人： Hideo Sato ,  Motohisa Nishihara ,  Kazuji Yamada ,  Seikou Suzuki

IPC分类号： G01L9/04 ,  G01B7/16 ,  G01D3/028 ,  G01L9/00 ,  G01L9/06 ,  G01L19/04 ,  H01L29/84

CPC分类号： G01L9/065

摘要： Four semiconductor strain gauges constitute a bridge circuit. This bridge circuit and a sensitivity temperature compensation circuit are connected in series, and a constant voltage is applied to the series circuit. The sensitivity temperature compensation circuit varies a voltage across the bridge circuit, depending upon temperatures. The constant voltage is divided to produce a predetermined voltage. The predetermined voltage is selected to be equal to the voltage of one output side node of the bridge circuit at the time when the semiconductor strain gauges are unstrained and at a predetermined temperature. The point of this voltage and the output side node are connected through a resistor so as to perform zero-point temperature compensation.

摘要翻译： 四个半导体应变计构成桥接电路。 该桥式电路和灵敏度温度补偿电路串联连接，并向串联电路施加恒定电压。 灵敏度温度补偿电路根据温度改变桥接电路两端的电压。 将恒定电压分压以产生预定电压。 选择预定电压等于当半导体应变计未受限制并处于预定温度时桥接电路的一个输出侧节点的电压。 该电压和输出侧节点通过电阻连接，以进行零点温度补偿。

公开(公告)号：US4173148A

公开(公告)日：1979-11-06

申请号：US948778

申请日：1978-10-05

申请人： Kazuji Yamada ,  Hideo Sato ,  Tsutomu Okayama ,  Motohisa Nishihara ,  Yoshitaka Matsuoka ,  Katsuya Katohgi ,  Yasumasa Matsuda ,  Satoshi Shimada

发明人： Kazuji Yamada ,  Hideo Sato ,  Tsutomu Okayama ,  Motohisa Nishihara ,  Yoshitaka Matsuoka ,  Katsuya Katohgi ,  Yasumasa Matsuda ,  Satoshi Shimada

IPC分类号： G01L9/04 ,  G01B7/16 ,  G01L1/22 ,  G01L9/00 ,  H01L23/58 ,  H01L29/84

CPC分类号： G01B7/18 ,  G01L1/2281 ,  G01L1/2293

摘要： A bridge circuit with four arms including semiconductor strain gauge elements has input terminals for coupling a DC power supply with a pair of diagonally opposite junctions of the bridge circuit per se and output terminals coupled with a pair of remaining diagonally opposite junctions. Initial zero-point temperature compensators each are connected in series and in parallel to each of semiconductor strain gauge elements on adjacent two arms of the bridge circuit. Temperature compensators for zero-point shift adjustment are each provided between the adjacent arms closer to each output terminal. A temperature compensator for span adjustment is provided between one of the input terminals and the DC power source. A constant current control unit for feeding a constant current to the bridge circuit is provided between the other input terminal and the DC power supply.

摘要翻译： 具有包括半导体应变计元件的四个臂的桥接电路具有用于将直流电源与桥接电路本身的一对斜对置接头连接的输入端子以及与一对剩余的对角线相对的接合部连接的输出端子。 初始零点温度补偿器各自与桥式电路的相邻两个臂上的每个半导体应变计元件串联并联。 用于零点移位调整的温度补偿器分别设置在靠近每个输出端子的相邻臂之间。 在一个输入端子和直流电源之间提供用于量程调节的温度补偿器。 在另一个输入端子和直流电源之间设置用于向桥式电路馈送恒定电流的恒定电流控制单元。

公开(公告)号：US4550612A

公开(公告)日：1985-11-05

申请号：US615524

申请日：1984-05-31

申请人： Kazuji Yamada ,  Shigeyuki Kobori ,  Satoshi Shimada ,  Ryosaku Kanzawa ,  Ryoichi Kobayashi ,  Hideo Sato

发明人： Kazuji Yamada ,  Shigeyuki Kobori ,  Satoshi Shimada ,  Ryosaku Kanzawa ,  Ryoichi Kobayashi ,  Hideo Sato

IPC分类号： G01L9/04 ,  G01L9/00 ,  H01L29/84 ,  G01L9/06

CPC分类号： H01L29/84 ,  G01L9/0054

摘要： In an integrated pressure sensor, a silicon chip for pressure detection and a substrate for supporting the silicon chip are made of the same material, the silicon chip has a thin diaphragm portion and a peripheral fixed portion thicker than the diaphragm portion, and the silicon chip is bonded to the substrate through a thin insulating film.

摘要翻译： 在集成压力传感器中，用于压力检测的硅芯片和用于支撑硅芯片的基板由相同的材料制成，硅芯片具有薄膜部分和比膜部分厚的周边固定部分，硅芯片 通过薄的绝缘膜与基板结合。

公开(公告)号：US4527428A

公开(公告)日：1985-07-09

申请号：US442665

申请日：1982-12-30

申请人： Satoshi Shimada ,  Kazuji Yamada ,  Seikou Suzuki ,  Shigeyuki Kobori ,  Motohisa Nishihara

发明人： Satoshi Shimada ,  Kazuji Yamada ,  Seikou Suzuki ,  Shigeyuki Kobori ,  Motohisa Nishihara

IPC分类号： G01L9/00 ,  G01L13/02 ,  G01L9/06

CPC分类号： G01L19/147 ,  G01L13/025 ,  G01L19/0038 ,  G01L19/0645 ,  G01L9/0054

摘要： A semiconductor pressure transducer including a measuring diaphragm of semiconductor material for sensing pressure supported by a support member of the same material. An oxide layer and a thin glass layer are interposed between the measuring diaphragm and the support member.

摘要翻译： 一种半导体压力传感器，包括用于感测由相同材料的支撑构件支撑的压力的半导体材料的测量膜。 氧化层和薄玻璃层介于测量膜片和支撑件之间。

公开(公告)号：US4891831A

公开(公告)日：1990-01-02

申请号：US222615

申请日：1988-07-21

申请人： Akira Tanaka ,  Satoshi Shimada ,  Kazuji Yamada ,  Yusaku Nakagawa ,  Motohisa Nishihara ,  Tadahiko Miyoshi ,  Noboru Baba ,  Hiromi Kagohara ,  Ichiro Inamura

发明人： Akira Tanaka ,  Satoshi Shimada ,  Kazuji Yamada ,  Yusaku Nakagawa ,  Motohisa Nishihara ,  Tadahiko Miyoshi ,  Noboru Baba ,  Hiromi Kagohara ,  Ichiro Inamura

IPC分类号： H01J35/10

CPC分类号： H01J35/108 ,  H01J2235/084

摘要： A method for generating X-rays in an X-ray tube, comprises the steps of: rotating an X-ray target of a rotating anode, the X-ray target having a metal coated layer thereon; applying electron beams emitted from a cathode onto the metal coated layer of the X-ray target; and offsetting thermal deformation of the X-ray target due to the application of the electron beams by deformation of the X-ray target due to centrifugal force, thereby maintaining a position of the X-ray target in a direction of the application of the electron beams, at a room temperature of the X-ray target, thus generating the X-rays.

公开(公告)号：US4173900A

公开(公告)日：1979-11-13

申请号：US883589

申请日：1978-03-06

申请人： Masanori Tanabe ,  Satoshi Shimada ,  Motohisa Nishihara ,  Kazuji Yamada ,  Yasumasa Matsuda ,  Michitaka Shimazoe ,  Yoshitaka Matsuoka ,  Yukio Takahashi ,  Katsuya Katohgi ,  Mitsuo Ai

发明人： Masanori Tanabe ,  Satoshi Shimada ,  Motohisa Nishihara ,  Kazuji Yamada ,  Yasumasa Matsuda ,  Michitaka Shimazoe ,  Yoshitaka Matsuoka ,  Yukio Takahashi ,  Katsuya Katohgi ,  Mitsuo Ai

IPC分类号： G01L9/00 ,  H01L29/84 ,  G01L9/06

CPC分类号： G01L9/0054 ,  H01L29/84

摘要： A semiconductor pressure transducer comprising a disc-shaped pressure-responsive diaphragm; a pair of radial strain gauge units having a piezoresistance effect, formed by injecting an impurity in the radial direction in the surface of the diaphragm; and a pair of tangential strain gauge units having a piezoresistance effect, formed by injecting an impurity in the tangential direction in the surface of the diaphragm, wherein the distance from the pair of the radial strain gauge units to the center of the circular diaphragm is greater than the distance from the pair of the tangential strain gauge units to the center of the circular diaphragm.

摘要翻译： 一种半导体压力传感器，包括盘形压力响应膜片; 一对具有压阻效应的径向应变计单元，其通过在所述隔膜的表面中沿径向注入杂质而形成; 以及具有压阻效应的一对切向应变计单元，其通过在隔膜的表面中沿切线注入杂质形成，其中从一对径向应变计单元到圆形隔膜的中心的距离更大 比从一对切向应变计单元到圆形隔膜中心的距离。

公开(公告)号：US4495820A

公开(公告)日：1985-01-29

申请号：US426084

申请日：1982-09-28

申请人： Satoshi Shimada ,  Kazuji Yamada ,  Seikou Suzuki ,  Motohisa Nishihara

发明人： Satoshi Shimada ,  Kazuji Yamada ,  Seikou Suzuki ,  Motohisa Nishihara

IPC分类号： G01L9/12 ,  G01L9/00 ,  H01G5/16 ,  H01L27/20 ,  H01G7/00 ,  H01L29/84

CPC分类号： H01L27/20 ,  G01L9/0073 ,  H01G5/16

摘要： A capacitive pressure sensor and its manufacturing method are disclosed. An amplifier is formed on the main surface of a first semiconductor substrate by a diffusion process, and its surface is covered with an insulating film. An electrode is vapor-deposited on the surface of the amplifier and electrically connected to the amplifier through a through hole formed in the insulating film. For forming a diaphragm, the surface of a second semiconductor substrate disposed facing the electrode to form a capacitor, which is opposite to the surface of the second semiconductor substrate facing the electrode, is partially etched away to form a depression. The first and second semiconductor substrates are anodically bonded to each other using a glass layer.

摘要翻译： 公开了一种电容式压力传感器及其制造方法。 通过扩散处理在第一半导体衬底的主表面上形成放大器，并且其表面被绝缘膜覆盖。 电极沉积在放大器的表面上，并通过形成在绝缘膜上的通孔与放大器电连接。 为了形成光阑，第二半导体衬底的与电极相对配置以形成与面向电极的第二半导体衬底的表面相反的电容器的表面被部分蚀刻掉以形成凹陷。 使用玻璃层将第一和第二半导体衬底彼此阳极接合。

公开(公告)号：US4166384A

公开(公告)日：1979-09-04

申请号：US940077

申请日：1978-09-06

申请人： Yasumasa Matsuda ,  Kazuji Yamada ,  Satoshi Shimada ,  Motohisa Nishihara ,  Tomio Yasuda ,  Masatoshi Tsuchiya ,  Ko Soeno ,  Mitsuo Ai ,  Takeo Nagata ,  Yoshitaka Matsuoka

发明人： Yasumasa Matsuda ,  Kazuji Yamada ,  Satoshi Shimada ,  Motohisa Nishihara ,  Tomio Yasuda ,  Masatoshi Tsuchiya ,  Ko Soeno ,  Mitsuo Ai ,  Takeo Nagata ,  Yoshitaka Matsuoka

IPC分类号： G01L1/26 ,  C21D8/00 ,  C22C38/00 ,  C22C38/10 ,  G01D5/16 ,  G01L1/22 ,  G01L9/00 ,  G01L1/04 ,  G01L1/18

CPC分类号： G01L1/2293 ,  G01L9/0055

摘要： A semiconductor transducer comprising an improved strain-yielding body yielding a strain in response to the impartation of a force or displacement, and a semiconductor strain gauge bonded to the strain-yielding body. The improved strain-yielding body is made of an iron-nickel-cobalt alloy containing 28.2 to 31.0% by weight of nickel and 15.0 to 19.5% by weight of cobalt. This iron-nickel-cobalt alloy is initially heated up to a temperature above 600.degree. C. for the purpose of standard heat treatment for removing its internal strain. After the standard heat treatment, the iron-nickel-cobalt alloy is subjected to cold working at a working rate of more than and including 60%, and is then subjected to heat treatment at a temperature between 350.degree. C. and 600.degree. C. The heat-treated iron-nickel-cobalt alloy is shaped into the predetermined form of the strain-yielding body.

摘要翻译： 一种半导体换能器，其包括响应于施加力或位移而产生应变的改进的应变屈服体以及结合到应变屈服体的半导体应变仪。 改进的应变产生体由含有28.2至31.0重量％的镍和15.0至19.5重量％的钴的铁镍钴合金制成。 为了去除其内部应变，这种铁镍钴合金最初被加热到高于600℃的温度以进行标准热处理。 经过标准热处理后，铁镍钴合金以大于60％的加工速度进行冷加工，然后在350℃〜600℃的温度下进行热处理。 热处理的铁镍钴合金被成形为应变产生体的预定形式。