Valve feedback control having redundant valve opening sensors
    1.
    发明授权
    Valve feedback control having redundant valve opening sensors 失效
    阀门反馈控制具有冗余阀门开启传感器

    公开(公告)号:US5669353A

    公开(公告)日:1997-09-23

    申请号:US611405

    申请日:1996-03-06

    摘要: A throttle control system has two throttle opening sensors. When one sensor in a PID feedback control loop becomes abnormal, as sensed by monitoring the difference between outputs of the dual sensors, the use of sensor output for throttle feedback control is switched from the abnormal one to the other, normal one. Which one of the throttle opening sensors has become abnormal is determined by monitoring the intensity of electric current flowing to a DC motor which drives the throttle valve. Further, if an abnormality in the newly-used other sensor is determined, feedback control is continued based on an estimation of throttle opening calculated by using output of the sensor before its malfunction.

    摘要翻译: 节流控制系统具有两个节气门开度传感器。 当PID反馈控制回路中的一个传感器变得异常时,通过监控双传感器输出之间的差异来检测,将油门反馈控制的传感器输出的使用从正常转换到另一个。 通过监视流向驱动节流阀的直流电动机的电流的强度来确定哪个节气门开度传感器变得异常。 此外,如果确定了新使用的其他传感器的异常,则基于在故障之前通过使用传感器的输出计算出的节气门开度的估计来继续反馈控制。

    Air flow rate control apparatus for internal combustion engine
    3.
    发明授权
    Air flow rate control apparatus for internal combustion engine 失效
    内燃机用空气流量控制装置

    公开(公告)号:US5640943A

    公开(公告)日:1997-06-24

    申请号:US437892

    申请日:1995-05-10

    CPC分类号: H02P8/12 F02D11/10 H02P8/30

    摘要: An air flow rate control apparatus for an internal combustion engine includes a stepping motor. The stepping motor has a plurality of coils and a rotor which is rotated by energizing the coils. A throttle valve connected to the rotor moves together with the rotor, and controls a rate of air flow drawn into the internal combustion engine. A control device is operative for feeding command currents of first and second command current values to first and second coils among the plurality of the coils respectively, and for controlling a degree of opening of the throttle valve. The first and second command current values correspond to a command degree of opening of the throttle valve at which the control device is intended to control the throttle valve. A direction of a resultant of vector forces generated by the first and second command currents simultaneously fed to the first and second coils corresponds to a held position of the rotor. A magnitude of the resultant of the vector forces corresponds to a magnitude of a hold force of the rotor.

    摘要翻译: 用于内燃机的空气流量控制装置包括步进电机。 步进电动机具有多个线圈和通过对线圈通电而旋转的转子。 连接到转子的节流阀与转子一起移动,并控制吸入内燃机的气流速率。 控制装置用于将第一和第二指令电流值的指令电流分别输送到多个线圈中的第一和第二线圈,并用于控制节流阀的打开程度。 第一和第二指令电流值对应于控制装置旨在控制节流阀的节气门的指令开度。 同时输入到第一和第二线圈的第一和第二指令电流产生的向量力的结果的方向对应于转子的保持位置。 矢量力的结果的大小对应于转子的保持力的大小。

    Motor drive control with excess current period timer resetting
    4.
    发明授权
    Motor drive control with excess current period timer resetting 有权
    电机驱动控制,超过电流周期定时器复位

    公开(公告)号:US06274993B1

    公开(公告)日:2001-08-14

    申请号:US09523285

    申请日:2000-03-10

    IPC分类号: F02D900

    CPC分类号: H02P7/04

    摘要: A microcomputer produces to a drive circuit drive command signals for starting to drive and braking a motor so that the position of a throttle valve is controlled to a target position. A current supplied to the motor is limited not to exceed a first current limitation value at the time of motor drive start and braking. When the current limitation continues for a predetermined time period, the current is further limited not to exceed a second current limitation value. The microcomputer detects switching of motor current supply direction. When the current supply direction is switched, a reset command signal is produced to reset a timer operation for a current limitation continuation determination.

    摘要翻译: 微型计算机产生驱动电路驱动命令信号,用于开始驱动和制动电动机,使得节流阀的位置被控制到目标位置。 提供给电动机的电流在电机驱动启动和制动时被限制为不超过第一电流限制值。 当电流限制持续预定时间段时,电流被进一步限制为不超过第二电流限制值。 微型计算机检测电动机电流供给方向的切换。 当切换电流供给方向时,产生复位命令信号,以复位定时器操作以进行电流限制继续判定。

    Semiconductor device and method for production thereof
    5.
    发明授权
    Semiconductor device and method for production thereof 失效
    半导体装置及其制造方法

    公开(公告)号:US4399451A

    公开(公告)日:1983-08-16

    申请号:US221371

    申请日:1980-12-30

    申请人: Kazunari Shirai

    发明人: Kazunari Shirai

    摘要: A plural layered wiring which comprises a plurality of polycrystal semiconductor layers can be improved in its magnitude of circuit integration, when one or more upper polycrystal semiconductor layers which is or are doped to a moderate impurity concentration is or are utilized as resistor elements, the lowest polycrystal semiconductor layer which is highly doped is utilized for electrodes and/or wirings for active elements, and both polycrystal layers are connected with each other by regions which are highly doped by upward diffusion of impurities contained in highly doped regions of a substrate, because this configuration entirely avoids the restriction that is imposed for the location of resistor elements arranged in the upper layers. This arrangement is realized by a specific sequential combination of steps which includes a step of upward diffusion of impurities from the highly doped regions of the substrate. An additional advantage of this method is the exclusion of a so-called non-butting process.

    摘要翻译: 当将一个或多个被掺杂到中等杂质浓度的上多个多晶半导体层用作电阻器元件时,包括多个多晶半导体层的多层布线可以提高其电路集成度,最低 高掺杂的多晶半导体层用于有源元件的电极和/或布线,并且多晶层通过由衬底的高度掺杂区域中包含的杂质向上扩散而被高度掺杂的区域彼此连接,因为这 配置完全避免了对布置在上层中的电阻元件的位置施加的限制。 这种布置通过特定的顺序组合的步骤来实现,其包括从衬底的高掺杂区域向上扩散杂质的步骤。 该方法的另外的优点是排除了所谓的非对接过程。

    Beam annealed silicide film on semiconductor substrate
    9.
    发明授权
    Beam annealed silicide film on semiconductor substrate 失效
    半导体衬底上的退火硅化物膜

    公开(公告)号:US4672740A

    公开(公告)日:1987-06-16

    申请号:US644962

    申请日:1984-08-28

    摘要: A semiconductor device having contact windows between an aluminum or aluminum-alloy wiring layer and a diffused region in a semiconductor substrate, in which the contacts are formed by using a barrier film on a refractory metal silicide between the wiring layer and the diffused region. The barrier film comprising the refactory metal and silicon is beam annealed for a short period of time such as, 10 seconds or less, so that adverse effects of the barrier film can be prevented while an excellent electrical or ohmic contact between the wiring layer and the diffused layer can be obtained.

    摘要翻译: 一种在铝或铝合金布线层与半导体衬底中的扩散区之间具有接触窗口的半导体器件,其中通过在布线层和扩散区域之间的难熔金属硅化物上使用阻挡膜形成触点。 包含反射金属和硅的阻挡膜在短时间内(例如10秒或更短)进行光束退火,从而可以防止阻挡膜的不利影响,同时在布线层和 可以获得扩散层。