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公开(公告)号:US5669353A
公开(公告)日:1997-09-23
申请号:US611405
申请日:1996-03-06
CPC分类号: F02D11/107 , F02D41/222 , F02D11/106 , F02D2041/227 , F02D2200/0404 , F02D2400/08 , Y02T10/40
摘要: A throttle control system has two throttle opening sensors. When one sensor in a PID feedback control loop becomes abnormal, as sensed by monitoring the difference between outputs of the dual sensors, the use of sensor output for throttle feedback control is switched from the abnormal one to the other, normal one. Which one of the throttle opening sensors has become abnormal is determined by monitoring the intensity of electric current flowing to a DC motor which drives the throttle valve. Further, if an abnormality in the newly-used other sensor is determined, feedback control is continued based on an estimation of throttle opening calculated by using output of the sensor before its malfunction.
摘要翻译: 节流控制系统具有两个节气门开度传感器。 当PID反馈控制回路中的一个传感器变得异常时,通过监控双传感器输出之间的差异来检测,将油门反馈控制的传感器输出的使用从正常转换到另一个。 通过监视流向驱动节流阀的直流电动机的电流的强度来确定哪个节气门开度传感器变得异常。 此外,如果确定了新使用的其他传感器的异常,则基于在故障之前通过使用传感器的输出计算出的节气门开度的估计来继续反馈控制。
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公开(公告)号:US5669351A
公开(公告)日:1997-09-23
申请号:US607138
申请日:1996-02-26
IPC分类号: F02D9/02 , F02D11/10 , F02D29/02 , F02D35/00 , F02D41/04 , F02D41/08 , F02D41/14 , F02D41/20 , F02D45/00 , F02D9/00
CPC分类号: F02D11/105 , F02D11/10 , F02D35/0007 , F02D2011/102 , F02D2041/1409 , F02D2041/1422
摘要: ECU performs a feedback control on a d.c. motor by a PID feedback control thereby to reduce errors between an actual throttle opening and a command throttle opening. PID control constants Kp, Ti and Td in the PID control are determined in accordance with operating conditions of a vehicle, such as engine idle speed control condition, vehicle traction control condition, vehicle cruise control condition and the like.
摘要翻译: ECU对直流电进行反馈控制。 电动机通过PID反馈控制,从而减少实际节气门开度和指令节气门开度之间的误差。 根据诸如发动机怠速控制条件,车辆牵引力控制条件,车辆行驶控制条件等的车辆的操作条件来确定PID控制中的PID控制常数Kp,Ti和Td。
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公开(公告)号:US5640943A
公开(公告)日:1997-06-24
申请号:US437892
申请日:1995-05-10
摘要: An air flow rate control apparatus for an internal combustion engine includes a stepping motor. The stepping motor has a plurality of coils and a rotor which is rotated by energizing the coils. A throttle valve connected to the rotor moves together with the rotor, and controls a rate of air flow drawn into the internal combustion engine. A control device is operative for feeding command currents of first and second command current values to first and second coils among the plurality of the coils respectively, and for controlling a degree of opening of the throttle valve. The first and second command current values correspond to a command degree of opening of the throttle valve at which the control device is intended to control the throttle valve. A direction of a resultant of vector forces generated by the first and second command currents simultaneously fed to the first and second coils corresponds to a held position of the rotor. A magnitude of the resultant of the vector forces corresponds to a magnitude of a hold force of the rotor.
摘要翻译: 用于内燃机的空气流量控制装置包括步进电机。 步进电动机具有多个线圈和通过对线圈通电而旋转的转子。 连接到转子的节流阀与转子一起移动,并控制吸入内燃机的气流速率。 控制装置用于将第一和第二指令电流值的指令电流分别输送到多个线圈中的第一和第二线圈,并用于控制节流阀的打开程度。 第一和第二指令电流值对应于控制装置旨在控制节流阀的节气门的指令开度。 同时输入到第一和第二线圈的第一和第二指令电流产生的向量力的结果的方向对应于转子的保持位置。 矢量力的结果的大小对应于转子的保持力的大小。
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公开(公告)号:US06274993B1
公开(公告)日:2001-08-14
申请号:US09523285
申请日:2000-03-10
申请人: Toru Itabashi , Kazunari Shirai
发明人: Toru Itabashi , Kazunari Shirai
IPC分类号: F02D900
CPC分类号: H02P7/04
摘要: A microcomputer produces to a drive circuit drive command signals for starting to drive and braking a motor so that the position of a throttle valve is controlled to a target position. A current supplied to the motor is limited not to exceed a first current limitation value at the time of motor drive start and braking. When the current limitation continues for a predetermined time period, the current is further limited not to exceed a second current limitation value. The microcomputer detects switching of motor current supply direction. When the current supply direction is switched, a reset command signal is produced to reset a timer operation for a current limitation continuation determination.
摘要翻译: 微型计算机产生驱动电路驱动命令信号,用于开始驱动和制动电动机,使得节流阀的位置被控制到目标位置。 提供给电动机的电流在电机驱动启动和制动时被限制为不超过第一电流限制值。 当电流限制持续预定时间段时,电流被进一步限制为不超过第二电流限制值。 微型计算机检测电动机电流供给方向的切换。 当切换电流供给方向时,产生复位命令信号,以复位定时器操作以进行电流限制继续判定。
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公开(公告)号:US4399451A
公开(公告)日:1983-08-16
申请号:US221371
申请日:1980-12-30
申请人: Kazunari Shirai
发明人: Kazunari Shirai
IPC分类号: H01L27/04 , G11C11/412 , H01L21/02 , H01L21/225 , H01L21/3205 , H01L21/3215 , H01L21/768 , H01L21/822 , H01L23/52 , H01L23/522 , H01L23/532 , H01L23/64 , H01L27/06 , H01L27/11 , H01L29/04 , H01L27/02
CPC分类号: H01L28/20 , G11C11/412 , H01L21/2257 , H01L21/32155 , H01L21/768 , H01L23/522 , H01L23/53271 , H01L23/647 , H01L27/0688 , H01L27/1112 , H01L2924/0002
摘要: A plural layered wiring which comprises a plurality of polycrystal semiconductor layers can be improved in its magnitude of circuit integration, when one or more upper polycrystal semiconductor layers which is or are doped to a moderate impurity concentration is or are utilized as resistor elements, the lowest polycrystal semiconductor layer which is highly doped is utilized for electrodes and/or wirings for active elements, and both polycrystal layers are connected with each other by regions which are highly doped by upward diffusion of impurities contained in highly doped regions of a substrate, because this configuration entirely avoids the restriction that is imposed for the location of resistor elements arranged in the upper layers. This arrangement is realized by a specific sequential combination of steps which includes a step of upward diffusion of impurities from the highly doped regions of the substrate. An additional advantage of this method is the exclusion of a so-called non-butting process.
摘要翻译: 当将一个或多个被掺杂到中等杂质浓度的上多个多晶半导体层用作电阻器元件时,包括多个多晶半导体层的多层布线可以提高其电路集成度,最低 高掺杂的多晶半导体层用于有源元件的电极和/或布线,并且多晶层通过由衬底的高度掺杂区域中包含的杂质向上扩散而被高度掺杂的区域彼此连接,因为这 配置完全避免了对布置在上层中的电阻元件的位置施加的限制。 这种布置通过特定的顺序组合的步骤来实现,其包括从衬底的高掺杂区域向上扩散杂质的步骤。 该方法的另外的优点是排除了所谓的非对接过程。
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公开(公告)号:US5214304A
公开(公告)日:1993-05-25
申请号:US849834
申请日:1992-03-12
申请人: Taiji Ema , Kazunari Shirai
发明人: Taiji Ema , Kazunari Shirai
IPC分类号: H01L21/768 , H01L21/8242 , H01L23/532 , H01L27/108 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/92
CPC分类号: H01L27/10808 , H01L21/768 , H01L23/53271 , H01L27/10852 , H01L28/40 , H01L29/4232 , H01L29/43 , H01L29/4916 , H01L2924/0002
摘要: A semiconductor device comprises:a insulating film having a first part and a second part, the second part being thiner than the first part; and a polycrystalline silicon film having a first part arranged over the first part of the insulating film and a second part arranged over the second part of the insulating film, the second part of the polycrystalline silicon film having a lower concentration of impurities than that of the first part of the polycrystalline silicon film.
摘要翻译: 一种半导体器件包括:具有第一部分和第二部分的绝缘膜,所述第二部分比所述第一部分更薄; 以及多晶硅膜,其具有布置在绝缘膜的第一部分上的第一部分和布置在绝缘膜的第二部分上的第二部分,多晶硅膜的第二部分的杂质浓度低于绝缘膜的第二部分 第一部分多晶硅膜。
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公开(公告)号:US07575012B2
公开(公告)日:2009-08-18
申请号:US11337579
申请日:2006-01-24
CPC分类号: H01M8/04089 , F17C5/007 , F17C5/06 , F17C7/00 , F17C11/005 , F17C13/026 , F17C2221/012 , F17C2223/0123 , F17C2223/036 , F17C2225/0123 , F17C2225/036 , F17C2227/043 , F17C2250/032 , F17C2250/0439 , F17C2270/0139 , F17C2270/0176 , H01M8/04208 , Y02E60/321 , Y10T137/0318 , Y10T137/2567
摘要: A gas supply apparatus including: a tank unit that includes a tank storing a gas and a discharge mechanism discharging the stored gas to the outside of the tank at a reduced pressure of the stored gas; a temperature detector that detects a temperature of the tank; and a supply regulator that regulates supply of the gas from the tank according to the detected tank temperature.
摘要翻译: 一种气体供应装置,包括:罐单元,其包括储存气体的罐和排出机构,所述排出机构在储存气体的减压下将储存的气体排放到所述罐的外部; 温度检测器,其检测罐的温度; 以及供应调节器,其根据检测到的罐温度来调节来自罐的气体的供应。
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公开(公告)号:US20060246177A1
公开(公告)日:2006-11-02
申请号:US11337579
申请日:2006-01-24
CPC分类号: H01M8/04089 , F17C5/007 , F17C5/06 , F17C7/00 , F17C11/005 , F17C13/026 , F17C2221/012 , F17C2223/0123 , F17C2223/036 , F17C2225/0123 , F17C2225/036 , F17C2227/043 , F17C2250/032 , F17C2250/0439 , F17C2270/0139 , F17C2270/0176 , H01M8/04208 , Y02E60/321 , Y10T137/0318 , Y10T137/2567
摘要: A gas supply apparatus including: a tank unit that includes a tank storing a gas and a discharge mechanism discharging the stored gas to the outside of the tank at a reduced pressure of the stored gas; a temperature detector that detects a temperature of the tank; and a supply regulator that regulates supply of the gas from the tank according to the detected tank temperature.
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公开(公告)号:US4672740A
公开(公告)日:1987-06-16
申请号:US644962
申请日:1984-08-28
IPC分类号: H01L21/28 , H01L21/285 , H01L21/44 , H01L21/441
CPC分类号: H01L21/28518 , H01L21/28 , Y10S148/019 , Y10S148/09
摘要: A semiconductor device having contact windows between an aluminum or aluminum-alloy wiring layer and a diffused region in a semiconductor substrate, in which the contacts are formed by using a barrier film on a refractory metal silicide between the wiring layer and the diffused region. The barrier film comprising the refactory metal and silicon is beam annealed for a short period of time such as, 10 seconds or less, so that adverse effects of the barrier film can be prevented while an excellent electrical or ohmic contact between the wiring layer and the diffused layer can be obtained.
摘要翻译: 一种在铝或铝合金布线层与半导体衬底中的扩散区之间具有接触窗口的半导体器件,其中通过在布线层和扩散区域之间的难熔金属硅化物上使用阻挡膜形成触点。 包含反射金属和硅的阻挡膜在短时间内(例如10秒或更短)进行光束退火,从而可以防止阻挡膜的不利影响,同时在布线层和 可以获得扩散层。
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公开(公告)号:US4326213A
公开(公告)日:1982-04-20
申请号:US964514
申请日:1978-11-29
申请人: Kazunari Shirai , Izumi Tanaka
发明人: Kazunari Shirai , Izumi Tanaka
IPC分类号: H01L27/04 , G11C11/412 , H01L21/02 , H01L21/3205 , H01L21/822 , H01L21/8244 , H01L23/52 , H01L27/06 , H01L27/11 , H01L27/02
CPC分类号: H01L28/20 , G11C11/412 , H01L27/0688 , H01L27/1112 , Y10S257/903
摘要: A polycrystalline silicon is used for a resistor element of a semiconductor device instead of a conventional, diffused resistor or a channel resistor, in which the channel resistance of an MOS transistor is utilized as the resistor. The length of a polycrystalline silicon layer for the resistor element is predetermined by the other polycrystalline silicon layer, formed above the resistor element. The structure of the semiconductor device according to the present invention is suited for a high density integrated circuit.
摘要翻译: 多晶硅用于半导体器件的电阻元件,而不是传统的扩散电阻器或沟道电阻器,其中MOS晶体管的沟道电阻用作电阻器。 用于电阻元件的多晶硅层的长度由形成在电阻元件上方的另一个多晶硅层预定。 根据本发明的半导体器件的结构适用于高密度集成电路。
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