摘要:
An inspection method and apparatus for discriminating the foreign particles on the surface of a sample from the foreign particles or defects within the sample, and a semiconductor-device producing method using the inspection method and apparatus. The inspection apparatus includes a light source, a first optical system that causes the light from the source to be directed to the sample, a second optical system for condensing the light coming back from the sample, a polarizing prism for separating the condensed light into polarized components, and optical detectors, for detecting the polarized components. The two optical systems, are arranged for their optical axes to make an angle of 50.degree. to 120.degree. relative to each other. The foreign particles on the surface of the sample and the foreign particles or defects within the sample are respectively discriminated from each other as side scattered light and backward scattered light by utilizing the difference between the intensity ratios of the polarized light components.
摘要:
The object of the present invention is to provide (1) a cell sorter, (2) a flow cytometer capable of detecting sideward scattered light, (3) a method for accurately measuring cell concentration, (4) a method for multicolor staining analysis without a fluorescence correction, and the like, which satisfy requirements that carry-over and cross contamination of samples do not occur.The object can be solved by an apparatus for separating particles comprising: a flow cell wherein a flow path is formed in a flat substrate, an illumination unit configured to illuminate the particles in a sample liquid flowing through the flow path, a detection unit configured to detect particles of interest by detecting scattered light or fluorescence from the particle when the particle is illuminated, and identifying the particle based on its signal intensity, a constant-pressure pump which applies a pressure pulse to the particles in the sample liquid flowing through the flow path in the flow cell, and an electromagnetic valve connected thereto, and a control unit configured to control the movement of the electromagnetic valve based on the signal from the detection unit.
摘要:
A metal vapor discharge lamp and a lighting fixture are downsized without causing breakage of an outer tube because of optimization of a positional relation among the outer tube (34), an inner tube (32), and an arc tube (40). The metal vapor discharge lamp has the arc tube, the inner tube housing the arc tube, and the outer tube housing the inner tube. The positional relation satisfies the relation of 2×A+B≧1.06. In a cross section of the lamp (the cross section of the arc tube is unshown for convenience), A (mm) represents the shortest distance between the arc tube and the inner tube along a line in a radial direction of the inner tube, and B (mm) represents a distance between the inner tube and the outer tube on a line segment C that is extension of the line.
摘要:
According to one embodiment, a method for manufacturing a thin film magnetic head includes forming on a substrate magnetic head portions having a magnetoresistive element and resistance detection elements for measuring an amount of polishing; slicing the substrate to form at least one row bar; polishing the ABS of each row bar; forming rails on the polished ABS; and cutting each row bar to separate each magnetic head portion. The step of polishing the ABS includes measuring a resistance of each resistance detection element and a resistance of each magnetoresistive element; calculating an offset value between the resistance detection element and the magnetoresistive element; and calculating a final resistance of the resistance detection element by using the calculated offset value. When the resistance of the resistance detection element reaches the final resistance, polishing of the ABS of the row bar is terminated. Other methods are presented as well.
摘要:
A metal vapor discharge lamp and a lighting fixture are downsized without causing breakage of an outer tube because of optimization of a positional relation among the outer tube (34), an inner tube (32), and an arc tube (40). The metal vapor discharge lamp has the arc tube, the inner tube housing the arc tube, and the outer tube housing the inner tube. The positional relation satisfies the relation of 2×A+B≧1.06. In a cross section of the lamp (the cross section of the arc tube is unshown for convenience), A (mm) represents the shortest distance between the arc tube and the inner tube along a line in a radial direction of the inner tube, and B (mm) represents a distance between the inner tube and the outer tube on a line segment C that is extension of the line.
摘要:
To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.
摘要:
The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.
摘要:
A laser light is projected to a thin film deposited on a transparent substrate, and measurement is performed on the entire measurement area of the substrate, and transmission intensity is measured by a transmission light intensity monitor and reflection light intensity is measured by a reflection light intensity monitor at the same points and at the same number of points on the substrate. From the value of “A=1−(R+T)” where R represents reflectivity and T is transmissivity, film thickness is measured and evaluated from the relation of the value A with film thickness. By this procedure, film thickness can be determined on 10,000 substrates or more per minute and film thickness of thin film can be measured over the entire substrate surface.
摘要:
The bill discriminating device includes: a body; and a mask portion, the body includes a main substrate having a light source, the mask portion includes a bill insertion port formed to be placed in a front surface of the bill discriminating device, and a bill chute passage having one end connected to a bill conveying passage and the other end extending to the bill insertion port, at least one surface of the bill chute passage is formed of a light guide member including a portion extending from the light source to the bill insertion port, and light emitted from the light source is optically connected to the bill insertion port via the light guide member.
摘要:
Provided is a metal halide lamp capable of being dimmed, which is prevented from non-lighting due to leakage of an arc tube attributable to a crack occurring at thin tubes, as well as realizing a desired color characteristic. The metal halide lamp has an arc tube that includes an envelope made of translucent ceramic, a pair of electrodes, and metal halides, the metal halides including rare earth metal halide, sodium halide, and magnesium halide, the rare earth metal halide being at least one of dysprosium halide, thulium halide, holmium halide, cerium halide, and praseodymium halide, and the magnesium halide being at least one of magnesium iodide and magnesium bromide, where when a maximum lamp power P (W) is in a range of 70 W to 250 W, the following relations are satisfied: 0.0345A+0.0028B