利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

38 条记录 (耗时 0.023 秒)

    METHOD FOR FORMING AlGaN CRYSTAL LAYER
    1.
    发明申请
    METHOD FOR FORMING AlGaN CRYSTAL LAYER 有权
    形成AlGaN晶体层的方法

    公开(公告)号：US20080242060A1

    公开(公告)日：2008-10-02

    申请号：US12051168

    申请日：2008-03-19

    申请人： Kei Kosaka ,  Shigeaki Sumiya ,  Tomohiko Shibata

    发明人： Kei Kosaka ,  Shigeaki Sumiya ,  Tomohiko Shibata

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0262 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254

    摘要： A method for preparing an AlGaN crystal layer with good surface flatness is provided. A surface layer of AlN is epitaxially formed on a c-plane sapphire single crystal base material by MOCVD method, and the resulting laminated body is then heated at a temperature of 1300° C. or higher so that a template substrate applying in-plane compressive stress and having a surface layer flat at a substantially atomic level is obtained. An AlGaN layer is formed on the template substrate at a deposition temperature higher than 1000° C. by an MOCVD method that includes depositing alternating layers of a first unit layer including a Group III nitride represented by the composition formula AlxGa1-xN (0≦x≦1) and a second unit layer including a Group III nitride represented by the composition formula AlyGa1-yN (0≦y≦1 and y≠x) such that the AlGaN layer has a superlattice structure.

    摘要翻译： 提供了一种制备具有良好表面平坦度的AlGaN晶体层的方法。 通过MOCVD法在C面蓝宝石单晶基材上外延形成AlN的表面层，然后在1300℃以上的温度下加热所得到的层叠体，使得在基板上施加面内压缩 获得了基本原子水平的表面层平坦的应力。 通过MOCVD方法在模板基板上以高于1000℃的沉积温度在模板基板上形成AlGaN层，该方法包括：沉积包含由组成式Al x x表示的III族氮化物的第一单元层的交替层， （0≤x≤1）的第一单元层和由组成式Al Y y表示的III族氮化物的第二单位层 1-y N（0 <= y <= 1和y

    Method for forming AlGaN crystal layer
    2.
    发明授权
    Method for forming AlGaN crystal layer 失效
    形成AlGaN晶体层的方法

    公开(公告)号：US07632741B2

    公开(公告)日：2009-12-15

    申请号：US12051138

    申请日：2008-03-19

    申请人： Kei Kosaka ,  Shigeaki Sumiya ,  Tomohiko Shibata

    发明人： Kei Kosaka ,  Shigeaki Sumiya ,  Tomohiko Shibata

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： H01L21/0262 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254

    摘要： There is provided a method for preparing an AlGaN crystal layer having an excellent surface flatness. A buffer layer effective in stress relaxation is formed on a template substrate having a surface layer that is flat at a substantially atomic level and to which in-plane compressive stress is applied, and an AlGaN layer is formed on the buffer layer, so that an AlGaN layer can be formed that is flat at a substantially atomic level. Particularly when the surface layer of the template substrate includes a first AlN layer, a second AlN layer may be formed thereon at a temperature of 600° C. or lower, while a mixed gas of TMA and TMG is supplied in a TMG/TMA mixing ratio of 3/17 or more to 6/17 or less, so that a buffer layer effective in stress relaxation the can be formed in a preferred manner.

    摘要翻译： 提供了具有优异的表面平坦度的制备AlGaN晶体层的方法。 在具有表面层的模板基板上形成有效应力松弛的缓冲层，该表面层基本上是原子水平的平面并且施加面内的压缩应力，并且在缓冲层上形成AlGaN层， AlGaN层可以形成为基本上原子水平的平坦。 特别是当模板衬底的表面层包括第一AlN层时，可以在600℃或更低的温度下在其上形成第二AlN层，而在TMG / TMA混合中提供TMA和TMG的混合气体 比例为3/17以上至6/17以下，可以优选形成有效应力松弛的缓冲层。

    METHOD FOR FORMING AlGaN CRYSTAL LAYER
    3.
    发明申请
    METHOD FOR FORMING AlGaN CRYSTAL LAYER 失效
    形成AlGaN晶体层的方法

    公开(公告)号：US20080233721A1

    公开(公告)日：2008-09-25

    申请号：US12051138

    申请日：2008-03-19

    申请人： Kei Kosaka ,  Shigeaki Sumiya ,  Tomohiko Shibata

    发明人： Kei Kosaka ,  Shigeaki Sumiya ,  Tomohiko Shibata

    IPC分类号： H01L21/205

    CPC分类号： H01L21/0262 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254

    摘要： There is provided a method for preparing an AlGaN crystal layer having an excellent surface flatness. A buffer layer effective in stress relaxation is formed on a template substrate having a surface layer that is flat at a substantially atomic level and to which in-plane compressive stress is applied, and an AlGaN layer is formed on the buffer layer, so that an AlGaN layer can be formed that is flat at a substantially atomic level. Particularly when the surface layer of the template substrate includes a first AlN layer, a second AlN layer may be formed thereon at a temperature of 600° C. or lower, while a mixed gas of TMA and TMG is supplied in a TMG/TMA mixing ratio of 3/17 or more to 6/17 or less, so that a buffer layer effective in stress relaxation the can be formed in a preferred manner.

    摘要翻译： 提供了具有优异的表面平坦度的制备AlGaN晶体层的方法。 在具有表面层的模板基板上形成有效应力松弛的缓冲层，该表面层基本上是原子水平的平面并且施加面内的压缩应力，并且在缓冲层上形成AlGaN层， AlGaN层可以形成为基本上原子水平的平坦。 特别是当模板衬底的表面层包括第一AlN层时，可以在600℃或更低的温度下在其上形成第二AlN层，而在TMG / TMA混合中提供TMA和TMG的混合气体 比例为3/17以上至6/17以下，可以优选形成有效应力松弛的缓冲层。

    Method for forming AlGaN crystal layer
    4.
    发明授权
    Method for forming AlGaN crystal layer 有权
    形成AlGaN晶体层的方法

    公开(公告)号：US07713847B2

    公开(公告)日：2010-05-11

    申请号：US12051168

    申请日：2008-03-19

    申请人： Kei Kosaka ,  Shigeaki Sumiya ,  Tomohiko Shibata

    发明人： Kei Kosaka ,  Shigeaki Sumiya ,  Tomohiko Shibata

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： H01L21/0262 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254

    摘要： A method for preparing an AlGaN crystal layer with good surface flatness is provided. A surface layer of AlN is epitaxially formed on a c-plane sapphire single crystal base material by MOCVD method, and the resulting laminated body is then heated at a temperature of 1300° C. or higher so that a template substrate applying in-plane compressive stress and having a surface layer flat at a substantially atomic level is obtained. An AlGaN layer is formed on the template substrate at a deposition temperature higher than 1000° C. by an MOCVD method that includes depositing alternating layers of a first unit layer including a Group III nitride represented by the composition formula AlxGa1-xN (0≦x≦1) and a second unit layer including a Group III nitride represented by the composition formula AlyGa1-yN (0≦y≦1 and y≠x) such that the AlGaN layer has a superlattice structure.

    摘要翻译： 提供了一种制备具有良好表面平坦度的AlGaN晶体层的方法。 通过MOCVD法在C面蓝宝石单晶基材上外延形成AlN的表面层，然后在1300℃以上的温度下加热所得到的层叠体，使得在基板上施加面内压缩 获得了基本原子水平的表面层平坦的应力。 通过MOCVD方法在模板基板上以高于1000℃的沉积温度在模板基板上形成AlGaN层，该方法包括沉积包含由组成式Al x Ga 1-x N（0＆nl E; x＆nlE）表示的III族氮化物的第一单元层的交替层 ; 1）和包含由组成式AlyGa1-yN（0＆amp; nlE; y＆nlE; 1和y≠x）表示的III族氮化物的第二单元层，使得AlGaN层具有超晶格结构。

    Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor device
    7.
    发明授权
    Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor device 有权
    提高III族氮化物晶体的表面平坦度的方法，用于外延生长的衬底和半导体器件

    公开(公告)号：US07687824B2

    公开(公告)日：2010-03-30

    申请号：US11167078

    申请日：2005-06-24

    申请人： Tomohiko Shibata ,  Keiichiro Asai ,  Shigeaki Sumiya

    发明人： Tomohiko Shibata ,  Keiichiro Asai ,  Shigeaki Sumiya

    IPC分类号： H01L29/24

    CPC分类号： C30B29/403 ,  C30B25/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/3245

    摘要： A heating process is performed in a nitrogen atmosphere at a temperature of not less than 1650° C. upon an epitaxial substrate including a single crystal base and an upper layer made of a group-III nitride crystal and epitaxially formed on a main surface of the single crystal base. The result shows that the heating process reduces the number of pits in a top surface to produce the effect of improving the surface flatness of the group-III nitride crystal. The result also shows that the dislocation density in the group-III nitride crystal is reduced to not more than one-half the dislocation density obtained before the heat treatment.

    摘要翻译： 在氮气气氛中，在包含单晶基底和由III族氮化物晶体构成的上层的外延基板上，在不低于1650℃的温度下进行加热处理，外延形成在 单晶底座。 结果表明，加热过程减少顶表面中的凹坑的数量，以产生提高III族氮化物晶体的表面平坦度的效果。 结果还表明，III族氮化物晶体中的位错密度降低到不超过热处理前获得的位错密度的一半。

    Method of reducing dislocations in group III nitride crystal, and substrate for epitaxial growth
    10.
    发明授权
    Method of reducing dislocations in group III nitride crystal, and substrate for epitaxial growth 有权
    降低III族氮化物晶体中的位错的方法和用于外延生长的衬底

    公开(公告)号：US07771849B2

    公开(公告)日：2010-08-10

    申请号：US12354921

    申请日：2009-01-16

    申请人： Tomohiko Shibata ,  Shigeaki Sumiya

    发明人： Tomohiko Shibata ,  Shigeaki Sumiya

    IPC分类号： B32B9/00 ,  C30B15/14

    CPC分类号： H01L21/3247 ,  C30B29/403 ,  C30B31/06 ,  C30B33/02 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02694

    摘要： An epitaxial substrate including a single-crystal base material and an upper layer of a group III nitride crystal film which is epitaxially formed on a main surface of the base material undergoes heating treatment in a nitrogen atmosphere at 1950° C. or higher for one minute. The result showed that, while a γ-ALON layer was formed only at the interface between the base material and the upper layer, the dislocation density in the group III nitride crystal was reduced to one tenth or less of the dislocation density before the heating treatment. The result also showed that the surface of the epitaxial substrate after the heating treatment had a reduced number of pits, which confirmed that high-temperature and short-time heating treatment was effective at improving the crystal quality and surface flatness of the group III nitride crystal.

    摘要翻译： 在基材的主表面上外延形成的包含单晶基材和III族氮化物晶体膜的上层的外延基板在1950℃以上的氮气气氛中进行1分钟的加热处理 。 结果表明，只有在基材和上层之间的界面形成γ-ALON层时，III族氮化物晶体中的位错密度降低到加热处理前的位错密度的十分之一以下 。 结果还表明，加热处理后的外延基板的表面的凹坑数量减少，这证实高温短时加热处理在提高III族氮化物晶体的晶体质量和表面平坦度方面是有效的 。