摘要:
A method for forming a copper dual damascene with improved copper migration resistance and improved electrical resistivity including providing a semiconductor wafer including upper and lower dielectric insulating layers separated by a middle etch stop layer; forming a dual damascene opening extending through a thickness of the upper and lower dielectric insulating layers wherein an upper trench line portion extends through the upper dielectric insulating layer thickness and partially through the middle etch stop layer; blanket depositing a barrier layer including at least one of a refractory metal and refractory metal nitride to line the dual damascene opening; carrying out a remote plasma etch treatment of the dual damascene opening to remove a bottom portion of the barrier layer to reveal an underlying conductive area; and, filling the dual damascene opening with copper to provide a substantially planar surface.
摘要:
A method for forming a copper dual damascene with improved copper migration resistance and improved electrical resistivity including providing a semiconductor wafer including upper and lower dielectric insulating layers separated by a middle etch stop layer; forming a dual damascene opening extending through a thickness of the upper and lower dielectric insulating layers wherein an upper trench line portion extends through the upper dielectric insulating layer thickness and partially through the middle etch stop layer; blanket depositing a barrier layer including at least one of a refractory metal and refractory metal nitride to line the dual damascene opening; carrying out a remote plasma etch treatment of the dual damascene opening to remove a bottom portion of the barrier layer to reveal an underlying conductive area; and, filling the dual damascene opening with copper to provide a substantially planar surface.
摘要:
A method of forming a metal-filled opening in a semiconductor or other submicron device substrate includes forming a conductive bulk layer over the substrate surface and in the opening, wherein the conductive bulk layer has a first grain size. A conductive cap layer is formed over the conductive bulk layer, the conductive cap layer having a second grain size that is substantially smaller than the first grain size. At least one of the conductive bulk and cap layers are then planarized to form a planar surface that is substantially coincident with the substrate surface.
摘要:
An electropolishing method for removing potential device-contaminating particles from a wafer, is disclosed. The method includes immersing the wafer in an electropolishing electrolyte solution and removing defects and particles from the wafer by rotational friction between the wafer and the electrolyte solution in combination with electrolysis. The method is effective in removing particles from via openings of all sizes, including via openings having a width smaller than about 0.2 μm.
摘要:
A novel test device and method for calibrating the alignment of a laser beam emitted from a laser metrology tool with respect to a target area on a substrate. The test device includes a laser-sensitive material having a calibration pattern that includes a target point. When the tool is properly adjusted, the laser beam strikes the target point and is released to production. If the laser beam misses the target point, the tool is re-adjusted and re-tested until the laser beam strikes the target point.
摘要:
A novel test device and method for calibrating the alignment of a laser beam emitted from a laser metrology tool with respect to a target area on a substrate. The test device includes a laser-sensitive material having a calibration pattern that includes a target point. When the tool is properly adjusted, the laser beam strikes the target point and is released to production. If the laser beam misses the target point, the tool is re-adjusted and re-tested until the laser beam strikes the target point.
摘要:
An electropolishing method for removing potential device-contaminating particles from a wafer, is disclosed. The method includes immersing the wafer in an electropolishing electrolyte solution and removing defects and particles from the wafer by rotational friction between the wafer and the electrolyte solution in combination with electrolysis. The method is effective in removing particles from via openings of all sizes, including via openings having a width smaller than about 0.2 μm.
摘要:
A method and system is disclosed for reducing slurry usage in a chemical mechanical polishing operation utilizing at least one polishing pad thereof. Slurry can be intermittently supplied to a chemical mechanical polishing device. The slurry is generally flushed so that a portion of said slurry is trapped in a plurality of pores of at least one polishing pad associated with said chemical mechanical polishing device, wherein only a minimum amount of said slurry necessary is utilized to perform said chemical mechanical polishing operation, thereby reducing slurry usage and maintaining a consistent level of slurry removal rate performance and a decrease in particle defects thereof. The present invention thus discloses a method and system for intermittently delivering slurry to a chemical mechanical polishing device in a manner that significantly conserves slurry usage.
摘要:
A method for improving thickness uniformity on a semiconductor wafer during a chemical mechanical polishing process capable of eliminating a wafer edge collapsing defect is described. In the method, slurry solution is removed from a peripheral edge portion of less than 10 mm wide on the surface of the polishing pad such that a concentration of the slurry can be effectively reduced in the peripheral region. The reduced slurry solution leads to a reduction in the removal rate on the wafer surface. The removal of slurry from the peripheral region can further be achieved by a mechanical means. A suitable width of the peripheral region of the polishing pad to be sprayed by an edge sprayer is less than 10 mm, and preferably between about 3 mm and about 5 mm. A suitable solvent to be sprayed is deionized water.
摘要:
A process for preparing a surface of a lower level metal structure, exposed at the bottom of a sub-micron diameter opening, to allow a low resistance interface to be obtained when overlaid with an upper level metal structure, has been developed. A disposable, capping insulator layer is first deposited on the composite insulator layer in which the sub-micron diameter opening will be defined in, to protect underlying components of the composite insulator from a subsequent metal pre-metal procedure. After anisotropically defining the sub-micron diameter opening in the capping insulator, and composite insulator layers, and after removal of the defining photoresist shape, an argon sputtering procedure is used to remove native oxide from the surface of the lower level metal structure. In addition to native oxide removal the argon sputtering procedure, featuring a negative DC bias applied to the substrate, also removes the capping insulator layer from the top surface of the composite insulator layer. An in situ metal deposition then allows a clean interface to result between the overlying metal layer, and the underlying plasma treated, metal surface.