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公开(公告)号：US07928469B2
公开(公告)日：2011-04-19
申请号：US12090451
申请日：2006-10-06
IPC分类号： H01L29/74 , H01L31/111
CPC分类号： H01L29/7802 , H01L21/046 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068
摘要： The present invention provides a MOSFET and so forth that offer high breakdown voltage and low on-state loss (high channel mobility and low gate threshold voltage) and that can easily achieve normally OFF. A drift layer 2 of a MOSFET made of silicon carbide according to the present invention has a first region 2a and a second region 2b. The first region 2a is a region from the surface to a first given depth. The second region 2b is formed in a region deeper than the first given depth. The impurity concentration of the first region 2a is lower than the impurity concentration of the second region 2b.
摘要翻译： 本发明提供了提供高击穿电压和低导通状态损耗（高沟道迁移率和低栅极阈值电压）并且可以容易地实现正常关断的MOSFET等。 根据本发明的由碳化硅制成的MOSFET的漂移层2具有第一区域2a和第二区域2b。 第一区域2a是从表面到第一给定深度的区域。 第二区域2b形成在比第一给定深度更深的区域中。 第一区域2a的杂质浓度低于第二区域2b的杂质浓度。
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公开(公告)号：US20090173997A1
公开(公告)日：2009-07-09
申请号：US12090451
申请日：2006-10-06
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7802 , H01L21/046 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068
摘要： The present invention provides a MOSFET and so forth that offer high breakdown voltage and low on-state loss (high channel mobility and low gate threshold voltage) and that can easily achieve normally OFF. A drift layer 2 of a MOSFET made of silicon carbide according to the present invention has a first region 2a and a second region 2b. The first region 2a is a region from the surface to a first given depth. The second region 2b is formed in a region deeper than the first given depth. The impurity concentration of the first region 2a is lower than the impurity concentration of the second region 2b.
摘要翻译： 本发明提供了提供高击穿电压和低导通状态损耗（高沟道迁移率和低栅极阈值电压）并且可以容易地实现正常关断的MOSFET等。 根据本发明的由碳化硅制成的MOSFET的漂移层2具有第一区域2a和第二区域2b。 第一区域2a是从表面到第一给定深度的区域。 第二区域2b形成在比第一给定深度更深的区域中。 第一区域2a的杂质浓度低于第二区域2b的杂质浓度。
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公开(公告)号：US08680538B2
公开(公告)日：2014-03-25
申请号：US12867061
申请日：2008-02-12
IPC分类号： H01L29/15
CPC分类号： H01L29/66068 , H01L23/3171 , H01L23/3192 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0661 , H01L29/0692 , H01L29/0696 , H01L29/1095 , H01L29/1608 , H01L29/6606 , H01L29/7811 , H01L29/8611 , H01L29/8613 , H01L29/872 , H01L2924/0002 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： In order to obtain a silicon carbide semiconductor device that ensures both stability of withstand voltage and reliability in high-temperature operations in its termination end-portion provided for electric-field relaxation in the perimeter of a cell portion driven as a semiconductor element, the termination end-portion is provided with an inorganic protection film having high heat resistance that is formed on an exposed surface of a well region as a first region formed on a side of the cell portion, and an organic protection film having a high electrical insulation capability with a little influence by electric charges that is formed on a surface of an electric-field relaxation region formed in contact relation to an outer lateral surface of the well region and apart from the cell portion, and on an exposed surface of the silicon carbide layer.
摘要翻译： 为了获得在作为半导体元件驱动的单元部分的周边中提供用于电场弛豫的其终端部分中的高温操作中的耐受电压的稳定性和可靠性的确保的碳化硅半导体器件， 端部设有具有高耐热性的无机保护膜，所述无机保护膜形成在作为形成在电池单元侧的第一区域的阱区的暴露表面上，以及具有高电绝缘能力的有机保护膜， 在形成于与阱区的外侧表面形成并且与电池部分隔开的电场弛豫区域的表面上以及在碳化硅层的暴露表面上的电荷的一点影响。
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公开(公告)号：US09006819B2
公开(公告)日：2015-04-14
申请号：US13639738
申请日：2011-02-08
申请人： Shiro Hino , Naruhisa Miura , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Akihiko Furukawa , Yukiyasu Nakao , Masayuki Imaizumi
发明人： Shiro Hino , Naruhisa Miura , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Akihiko Furukawa , Yukiyasu Nakao , Masayuki Imaizumi
IPC分类号： H01L29/66 , H01L29/10 , H01L29/78 , H01L29/861 , H01L29/06 , H01L29/16 , H01L29/40 , H01L29/423 , H01L29/739
CPC分类号： H01L29/1095 , H01L29/0615 , H01L29/0638 , H01L29/0696 , H01L29/1608 , H01L29/402 , H01L29/42372 , H01L29/66068 , H01L29/7395 , H01L29/7805 , H01L29/7811 , H01L29/8611
摘要： A semiconductor device includes a semiconductor substrate of a first conductivity type, a drift layer of the first conductivity type which is formed on a first main surface of the semiconductor substrate, a second well region of a second conductivity type which is formed to surround a cell region of the drift layer, and a source pad for electrically connecting the second well regions and a source region of the cell region through a first well contact hole provided to penetrate a gate insulating film on the second well region, a second well contact hole provided to penetrate a field insulating film on the second well region and a source contact hole.
摘要翻译： 半导体器件包括第一导电类型的半导体衬底，形成在半导体衬底的第一主表面上的第一导电类型的漂移层，形成为围绕电池的第二导电类型的第二阱区域 漂移层的区域和用于通过设置成穿过第二阱区域上的栅极绝缘膜设置的第一阱接触孔电连接第二阱区域和电池区域的源极区域的源极焊盘，提供第二阱接触孔 以穿透第二阱区域上的场绝缘膜和源极接触孔。
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公开(公告)号：US08093598B2
公开(公告)日：2012-01-10
申请号：US12162998
申请日：2007-03-19
IPC分类号： H01L31/0312
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/45 , H01L29/4925 , H01L29/4941 , H01L29/66068 , H01L29/7828
摘要： A power semiconductor device less prone to cause a reaction between a metal material for interconnection and an electrode or the like connected to a semiconductor region during the high-temperature operation thereof and less prone to be strained during the high-temperature operation thereof. The power semiconductor device can be an SiC power device or the like in which a first metal layer containing at least one selected from the group consisting of Pt, Ti, Mo, W and Ta is formed on a source electrode formed on the semiconductor region, such as a source region or the like. A second metal layer containing at least one selected from the group consisting of Mo, W and Cu is formed on the first metal layer. A third metal layer containing at least one selected from the group consisting of Pt, Mo and W is formed on the second metal layer.
摘要翻译： 功率半导体器件在其高温操作期间不容易引起用于互连的金属材料与连接到半导体区域的电极等之间的反应，并且在其高温操作期间不易于变形。 功率半导体器件可以是在形成在半导体区域上的源电极上形成含有选自Pt，Ti，Mo，W和Ta中的至少一种的第一金属层的SiC功率器件等， 例如源区域等。 在第一金属层上形成含有选自Mo，W和Cu中的至少一种的第二金属层。 在第二金属层上形成含有选自Pt，Mo和W中的至少一种的第三金属层。
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公开(公告)号：US20090020766A1
公开(公告)日：2009-01-22
申请号：US12162998
申请日：2007-03-19
IPC分类号： H01L29/24
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/45 , H01L29/4925 , H01L29/4941 , H01L29/66068 , H01L29/7828
摘要： A power semiconductor device less prone to cause a reaction between a metal material for interconnection and an electrode or the like connected to a semiconductor region during the high-temperature operation thereof and less prone to be strained during the high-temperature operation thereof. The power semiconductor device can be an SiC power device or the like in which a first metal layer containing at least one selected from the group consisting of Pt, Ti, Mo, W and Ta is formed on a source electrode formed on the semiconductor region, such as a source region or the like. A second metal layer containing at least one selected from the group consisting of Mo, W and Cu is formed on the first metal layer. A third metal layer containing at least one selected from the group consisting of Pt, Mo and W is formed on the second metal layer.
摘要翻译： 功率半导体器件在其高温操作期间不容易引起用于互连的金属材料与连接到半导体区域的电极等之间的反应，并且在其高温操作期间不易于变形。 功率半导体器件可以是在形成在半导体区域上的源电极上形成含有选自Pt，Ti，Mo，W和Ta中的至少一种的第一金属层的SiC功率器件等， 例如源区域等。 在第一金属层上形成含有选自Mo，W和Cu中的至少一种的第二金属层。 在第二金属层上形成含有选自Pt，Mo和W中的至少一种的第三金属层。
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公开(公告)号：US09293572B2
公开(公告)日：2016-03-22
申请号：US13806534
申请日：2010-06-24
申请人： Akihiko Furukawa , Yasuhiro Kagawa , Naruhisa Miura , Shiro Hino , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Masayuki Imaizumi
发明人： Akihiko Furukawa , Yasuhiro Kagawa , Naruhisa Miura , Shiro Hino , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Masayuki Imaizumi
CPC分类号： H01L29/78 , H01L21/0485 , H01L27/088 , H01L29/0696 , H01L29/45 , H01L29/6606 , H01L29/66068 , H01L29/7805 , H01L29/7815
摘要： In a high speed switching power semiconductor device having a sense pad, a high voltage is generated during switching operations in well regions under the sense pad due to a displacement current flowing through its flow path with a resistance, whereby the power semiconductor device sometimes breaks down by dielectric breakdown of a thin insulating film such as a gate insulating film. In a power semiconductor device according to the invention, sense-pad well contact holes are provided on well regions positioned under the sense pad and penetrate a field insulating film thicker than the gate insulating film to connect to the source pad, thereby improving reliability.
摘要翻译： 在具有感测焊盘的高速开关电力半导体器件中，由于位移电流通过其流动路径而具有电阻，在感测焊盘下的阱区域的开关操作期间产生高电压，由此功率半导体器件有时会分解 通过诸如栅极绝缘膜的薄绝缘膜的电介质击穿。 在根据本发明的功率半导体器件中，感测焊盘井接触孔设置在位于感测焊盘下方的阱区上，并穿透比栅极绝缘膜更厚的场绝缘膜以连接到源极焊盘，从而提高可靠性。
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公开(公告)号：US20130168700A1
公开(公告)日：2013-07-04
申请号：US13806534
申请日：2010-06-24
申请人： Akihiko Furukawa , Yasuhiro Kagawa , Naruhisa Miura , Shiro Hino , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Masayuki Imaizumi
发明人： Akihiko Furukawa , Yasuhiro Kagawa , Naruhisa Miura , Shiro Hino , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Masayuki Imaizumi
IPC分类号： H01L29/78
CPC分类号： H01L29/78 , H01L21/0485 , H01L27/088 , H01L29/0696 , H01L29/45 , H01L29/6606 , H01L29/66068 , H01L29/7805 , H01L29/7815
摘要： In a high speed switching power semiconductor device having a sense pad, a high voltage is generated during switching operations in well regions under the sense pad due to a displacement current flowing through its flow path with a resistance, whereby the power semiconductor device sometimes breaks down by dielectric breakdown of a thin insulating film such as a gate insulating film. In a power semiconductor device according to the invention, sense-pad well contact holes are provided on well regions positioned under the sense pad and penetrate a field insulating film thicker than the gate insulating film to connect to the source pad, thereby improving reliability.
摘要翻译： 在具有感测焊盘的高速开关电力半导体器件中，由于位移电流通过其流动路径而具有电阻，在感测焊盘下的阱区域的开关操作期间产生高电压，由此功率半导体器件有时会分解 通过诸如栅极绝缘膜的薄绝缘膜的电介质击穿。 在根据本发明的功率半导体器件中，感测焊盘井接触孔设置在位于感测焊盘下方的阱区上，并穿透比栅极绝缘膜更厚的场绝缘膜以连接到源极焊盘，从而提高可靠性。
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公开(公告)号：US20130020587A1
公开(公告)日：2013-01-24
申请号：US13639738
申请日：2011-02-08
申请人： Shiro Hino , Naruhisa Miura , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Akihiko Furukawa , Yukiyasu Nakao , Masayuki Imaizumi
发明人： Shiro Hino , Naruhisa Miura , Shuhei Nakata , Kenichi Ohtsuka , Shoyu Watanabe , Akihiko Furukawa , Yukiyasu Nakao , Masayuki Imaizumi
IPC分类号： H01L29/161 , H01L21/336
CPC分类号： H01L29/1095 , H01L29/0615 , H01L29/0638 , H01L29/0696 , H01L29/1608 , H01L29/402 , H01L29/42372 , H01L29/66068 , H01L29/7395 , H01L29/7805 , H01L29/7811 , H01L29/8611
摘要： A semiconductor device includes a semiconductor substrate of a first conductivity type, a drift layer of the first conductivity type which is formed on a first main surface of the semiconductor substrate, a second well region of a second conductivity type which is formed to surround a cell region of the drift layer, and a source pad for electrically connecting the second well regions and a source region of the cell region through a first well contact hole provided to penetrate a gate insulating film on the second well region, a second well contact hole provided to penetrate a field insulating film on the second well region and a source contact hole.
摘要翻译： 半导体器件包括第一导电类型的半导体衬底，形成在半导体衬底的第一主表面上的第一导电类型的漂移层，形成为围绕电池的第二导电类型的第二阱区域 漂移层的区域和用于通过设置成穿过第二阱区域上的栅极绝缘膜设置的第一阱接触孔电连接第二阱区域和电池区域的源极区域的源极焊盘，提供第二阱接触孔 以穿透第二阱区域上的场绝缘膜和源极接触孔。
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公开(公告)号：US20100314629A1
公开(公告)日：2010-12-16
申请号：US12867061
申请日：2008-02-12
IPC分类号： H01L31/0312
CPC分类号： H01L29/66068 , H01L23/3171 , H01L23/3192 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0661 , H01L29/0692 , H01L29/0696 , H01L29/1095 , H01L29/1608 , H01L29/6606 , H01L29/7811 , H01L29/8611 , H01L29/8613 , H01L29/872 , H01L2924/0002 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： In order to obtain a silicon carbide semiconductor device that ensures both stability of withstand voltage and reliability in high-temperature operations in its termination end-portion provided for electric-field relaxation in the perimeter of a cell portion driven as a semiconductor element, the termination end-portion is provided with an inorganic protection film having high heat resistance that is formed on an exposed surface of a well region as a first region formed on a side of the cell portion, and an organic protection film having a high electrical insulation capability with a little influence by electric charges that is formed on a surface of an electric-field relaxation region formed in contact relation to an outer lateral surface of the well region and apart from the cell portion, and on an exposed surface of the silicon carbide layer.
摘要翻译： 为了获得在作为半导体元件驱动的单元部分的周边中提供用于电场弛豫的其终端部分中的高温操作中的耐受电压的稳定性和可靠性的确保的碳化硅半导体器件， 端部设有具有高耐热性的无机保护膜，所述无机保护膜形成在作为形成在电池单元侧的第一区域的阱区的暴露表面上，以及具有高电绝缘能力的有机保护膜， 在形成于与阱区的外侧表面形成并且与电池部分隔开的电场弛豫区域的表面上以及在碳化硅层的暴露表面上的电荷的一点影响。
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