Optoelectronic device packaging assemblies and methods of making the same
    6.
    发明授权
    Optoelectronic device packaging assemblies and methods of making the same 失效
    光电器件封装组件及其制造方法

    公开(公告)号:US07427524B2

    公开(公告)日:2008-09-23

    申请号:US11202596

    申请日:2005-08-11

    IPC分类号: H01L33/00

    摘要: Optoelectronic device packaging assemblies and methods of making the same are described. In one aspect, an optoelectronic device packaging assembly includes an electrical sub-mount that includes a mounting area, a device turning mount, and a light-emitting device. The device turning mount has a sub-mount mounting side that is attached to the mounting area of the electrical sub-mount and a device mounting side that has a device mounting area that is oriented in a plane that is substantially perpendicular to the mounting area of the electrical sub-mount. The light-emitting device includes one or more semiconductor layers that terminate at a common light-emitting surface and are operable to emit light from the light-emitting surface. The light-emitting device is attached to the device mounting area of the device turning mount with the light-emitting surface oriented in a plane that is substantially parallel to the mounting area of the electrical sub-mount.

    摘要翻译: 描述了光电器件封装组件及其制造方法。 在一个方面,一种光电子器件封装组件包括一个包括安装区域的电子安装座,一个装置转动架和一个发光装置。 装置转向架具有安装在电子安装座的安装区域上的副安装安装侧和装置安装侧,该装置安装侧具有在与基本上垂直于 电子底座。 发光器件包括一个或多个半导体层,其终止于共同的发光表面并且可操作以从发光表面发射光。 发光装置被附接到装置转向架的装置安装区域,其中发光表面定向在基本上平行于电子安装座的安装区域的平面内。

    Heat bond seaming tape and method of manufacture
    9.
    发明授权
    Heat bond seaming tape and method of manufacture 失效
    热键接缝胶带及其制造方法

    公开(公告)号:US5691051A

    公开(公告)日:1997-11-25

    申请号:US551423

    申请日:1995-11-01

    申请人: James A. Matthews

    发明人: James A. Matthews

    IPC分类号: B32B29/02 C09J7/04 B32B7/12

    摘要: A heat bond seaming tape has a base formed of a strip of paper or a paper-like material and an overlying strip of an open mesh material. A plurality of transversely spaced, longitudinally extending beads of a hot melt thermoplastic adhesive material is placed on a top surface of the mesh for adhering the tape to the backs of adjacent carpet edges. A strip of a rigid thermoplastic material is sandwiched between the base strip and the strip of open mesh and extends longitudinally along the center of the strip and extends transversely across the carpet seam to prevent seam buckling. The plastic strip is formed by a plurality of separate or flexibly connected hard plastic members to enable the tape to be formed into a roll for transportation and storage. The invention also relates to the method of forming the improved heat bond seaming tape.

    摘要翻译: 热粘合缝合带具有由纸条或纸状材料形成的基底和开放的网状材料的覆盖带。 多个横向间隔开的纵向延伸的热熔性热塑性粘合剂材料的珠粒被放置在网的顶表面上,用于将带粘附到相邻地毯边缘的后部。 刚性热塑性材料条被夹在基底条和开放网状物条之间,并沿着条带的中心纵向延伸,横向穿过地毯接缝,以防止接缝弯曲。 塑料条由多个单独或柔性连接的硬塑料构件形成,以使带能够形成为用于运输和储存的卷。 本发明还涉及形成改进的热粘合缝合带的方法。

    Bipolar junction transistor exhibiting improved beta punch-through
characteristics
    10.
    发明授权
    Bipolar junction transistor exhibiting improved beta punch-through characteristics 失效
    双极结晶体管具有改进的β穿透特性

    公开(公告)号:US5386140A

    公开(公告)日:1995-01-31

    申请号:US114980

    申请日:1993-08-31

    申请人: James A. Matthews

    发明人: James A. Matthews

    摘要: A bipolar transistor having an emitter, a base, and a collector includes an intrinsic base region having narrow side areas and a wider central area. The side areas are located adjacent to the extrinsic base region, while the central area is disposed underneath the emitter. The lateral doping profile of the base is tailored so that the doping concentrations in the extrinsic region and the central area are relatively high compared to the doping concentration of the narrow side areas of the intrinsic base. The combination of the narrow side areas and the lateral base doping profile constrains the depletion region within the base thereby lowering punch-through voltage of the transistor without loss of beta.

    摘要翻译: 具有发射极,基极和集电极的双极晶体管包括具有窄侧面区域和较宽中心区域的本征基极区域。 侧面区域位于外部基极区域附近,而中央区域设置在发射体下方。 定制基极的横向掺杂分布,使得与本征基极的窄边区域的掺杂浓度相比,外在区域和中心区域中的掺杂浓度相对较高。 窄边区域和横向基极掺杂曲线的组合限制了基极内的耗尽区域,从而降低晶体管的穿通电压而不损失β。