公开(公告)号：US5885916A

公开(公告)日：1999-03-23

申请号：US931499

申请日：1997-09-16

申请人： Kenichi Tajima ,  Hideki Uchimura ,  Koichi Tanaka ,  Shoji Kohsaka ,  Hiroshi Maruyama

发明人： Kenichi Tajima ,  Hideki Uchimura ,  Koichi Tanaka ,  Shoji Kohsaka ,  Hiroshi Maruyama

IPC分类号： C04B35/584 ,  C04B35/593 ,  C04B35/622 ,  C04B41/50 ,  C04B41/87 ,  C23C16/511 ,  H01B3/12 ,  H01J23/40 ,  H01P1/08 ,  B32B18/00

CPC分类号： C04B41/009 ,  C04B35/584 ,  C04B35/593 ,  C04B35/5935 ,  C04B35/62222 ,  C04B41/5031 ,  C04B41/5042 ,  C04B41/5063 ,  C04B41/87 ,  C23C16/511 ,  H01B3/12 ,  H01J23/40 ,  H01P1/08 ,  H01J2223/40

摘要： A dielectric material having a low dielectric loss factor for high-frequency use, which comprises a sintered product of silicon nitride chiefly composed of silicon nitride and containing at least oxygen as an impurity component or oxygen as an impurity component and a compound of an element of the Group 3a of periodic table, wherein said sintered product contains aluminum in an amount which is not larger than 2% by weight reckoned as an oxide thereof having relative densities of not smaller than 97% and has a dielectric loss factor at 10 GHz ofnot larger than 5.times.10.sup.-4. The dielectric material has excellent mechanical properties such as large strength and excellent chemical stability, features small dielectric loss factor in high-frequency regions, and is suited for use as a material for high-frequency oscillators, antennas, filters and electronic circuit boards. In particular, those dielectric materials are suited for use as window materials for introducing high frequencies in a high-frequency plasma-generating CVD apparatus, a microwave wave output unit and an oscillator.

摘要翻译： 一种具有低介电损耗因子用于高频用途的电介质材料，其包括主要由氮化硅组成的氮化硅和至少含有氧作为杂质成分或氧作为杂质成分的烧结体，以及元素的化合物 元素周期表的第3a族，其中所述烧结产物含有不大于2重量％的铝，其相对密度不低于97％且其10千兆赫的介电损耗系数不大 超过5x10-4。 电介质材料具有优异的机械性能，例如强度高，化学稳定性优异，在高频区域具有小的介电损耗因子，适用于高频振荡器，天线，滤波器和电子电路板的材料。 特别地，这些介电材料适合用作在高频等离子体产生CVD装置，微波波输出单元和振荡器中引入高频的窗口材料。

公开(公告)号：US5804523A

公开(公告)日：1998-09-08

申请号：US853410

申请日：1997-05-09

申请人： Takehiro Oda ,  Koichi Tanaka ,  Tomohiro Iwaida ,  Sentaro Yamamoto ,  Shoji Kohsaka ,  Masahiro Sato ,  Hideki Uchimura ,  Kenichi Tajima

发明人： Takehiro Oda ,  Koichi Tanaka ,  Tomohiro Iwaida ,  Sentaro Yamamoto ,  Shoji Kohsaka ,  Masahiro Sato ,  Hideki Uchimura ,  Kenichi Tajima

IPC分类号： C04B35/593 ,  C04B35/587

CPC分类号： C04B35/593 ,  C04B35/5935

摘要： A sintered product of silicon nitride containing not smaller than 70 mol % of a .beta.-silicon nitride as well as an element of the Group 3a at least including Lu of periodic table and impurity oxygen, wherein when the content of the element of the Group 3a of periodic table and the content of the impurity oxygen are, respectively, expressed being reckoned as the amount of an oxide of the element of the Group 3a of periodic table (RE.sub.2 O.sub.3) and as the amount of SiO.sub.2 of impurity oxygen, their total amount is from 2 to 30 mol %, the molar ratio (SiO.sub.2 /RE.sub.2 O.sub.3) of the amount of the element of the Group 3a of periodic table reckoned as the oxide (RE.sub.2 O.sub.3) thereof to the amount of impurity oxygen reckoned as SiO.sub.2 is from 1.6 to 10, and the intergranular phase of the sintered product chiefly comprises a crystal phase consisting of the element of the Group 3a of periodic table, silicon and oxygen and a process for producing the same. The sintered product has a large strength from room temperature through up to high temperatures and maintains excellent resistance against oxidation even at high temperatures, and exhibits excellent resistance against creeping and excellent breaking toughness.

摘要翻译： 包含不小于70mol％的β-氮化硅的氮化硅的烧结产品以及至少包括Lu的元素周期表和杂质氧的第3a族的元素，其中当第3a族元素的含量 的周期表和杂质氧的含量分别表示为元素周期表（RE 2 O 3）的第3a族元素的氧化物的量和杂质氧的SiO 2的量，它们的总量是 2〜30摩尔％时，作为氧化物（RE 2 O 3）的元素周期表中的元素的量与作为SiO 2计算的杂质氧的量的摩尔比（SiO 2 / RE 2 O 3）为1.6〜10 ，并且烧结体的晶间相主要包含由元素周期表第3a族元素，硅和氧组成的结晶相及其制造方法。 该烧结体从室温至高温具有很大的强度，即使在高温下也能保持优异的抗氧化性，并且具有优异的抗蠕变性和优异的断裂韧性。

公开(公告)号：US07939744B2

公开(公告)日：2011-05-10

申请号：US10226087

申请日：2002-08-21

申请人： Masato Fukudome ,  Kazuhiro Nishizono ,  Koichi Tanaka ,  Kenichi Tajima

发明人： Masato Fukudome ,  Kazuhiro Nishizono ,  Koichi Tanaka ,  Kenichi Tajima

IPC分类号： H01L35/30 ,  H01L35/28 ,  H01L35/16 ,  H01L35/20 ,  C01B9/00 ,  C01B25/14 ,  C01B19/04 ,  C04B35/00

CPC分类号： H01L35/16 ,  H01L35/32

摘要： A thermoelectric element formed of a sintered body of a semiconductor comprising at least two kinds of elements selected from the group consisting of Bi, Te, Se and Sb, and having a micro-Vickers' hardness of not smaller than 0.5 GPa. The thermoelectric element has a hardness of not smaller than 0.5 GPa, and exhibits a large resistance against deformation, and is not easily broken by deformation. As a result, breakage due to deformation is prevented and a highly reliable thermoelectric element is realized even when a shape factor which is a ratio of the sectional area of the thermoelectric element to the height thereof, is increased and even when the element density is increased.

摘要翻译： 由半导体烧结体形成的热电元件包括​​选自由Bi，Te，Se和Sb组成的组中的至少两种元素，并且具有不小于0.5GPa的微维氏硬度。 该热电元件具有不小于0.5GPa的硬度，并且表现出较大的抗变形能力，并且不容易因变形而破裂。 结果，即使当作为热电元件的截面积与其高度的比例的比例的形状因子增加时，即使元件密度增加，也可以防止由于变形引起的破损，并且即使形成高温可靠的热电元件， 。

公开(公告)号：US20070006911A1

公开(公告)日：2007-01-11

申请号：US11531193

申请日：2006-09-12

申请人： Masato FUKUDOME ,  Kazuhiro Nishizono ,  Koichi Tanaka ,  Kenichi Tajima

发明人： Masato FUKUDOME ,  Kazuhiro Nishizono ,  Koichi Tanaka ,  Kenichi Tajima

IPC分类号： H01L35/34

CPC分类号： H01L35/16 ,  H01L35/32

摘要： A thermoelectric element formed of a sintered body of a semiconductor comprising at least two kinds of elements selected from the group consisting of Bi, Te, Se and Sb, and having a micro-Vickers' hardness of not smaller than 0.5 GPa. The thermoelectric element has a hardness of not smaller than 0.5 GPa, and exhibits a large resistance against deformation, and is not easily broken by deformation. As a result, breakage due to deformation is prevented and a highly reliable thermoelectric element is realized even when a shape factor which is a ratio of the sectional area of the thermoelectric element to the height thereof, is increased and even when the element density is increased.

摘要翻译： 由半导体烧结体形成的热电元件包括​​选自由Bi，Te，Se和Sb组成的组中的至少两种元素，并且具有不小于0.5GPa的微维氏硬度。 该热电元件具有不小于0.5GPa的硬度，并且表现出较大的抗变形能力，并且不容易因变形而破裂。 结果，即使当作为热电元件的截面积与其高度的比例的比例的形状因子增加时，即使元件密度增加，也可以防止由于变形引起的破损，并且即使形成高温可靠的热电元件， 。

公开(公告)号：US20050241690A1

公开(公告)日：2005-11-03

申请号：US11150707

申请日：2005-06-09

申请人： Kenichi Tajima ,  Koichi Tanaka

发明人： Kenichi Tajima ,  Koichi Tanaka

IPC分类号： H01L35/00 ,  H01L35/04 ,  H01L35/08 ,  H01L35/10 ,  H01L35/28 ,  H01L35/34 ,  H01L37/00

CPC分类号： H01L35/08 ,  H01L35/10

摘要： A thermoelectric module 11 includes support substrates 1a and 1b, the same numbers of N-type thermoelectric elements 2a and P-type thermoelectric elements 2b disposed on the support substrates 1a and 1b, wiring conductors 3a and 3b that electrically connect between the thermoelectric elements in series and an external connection terminal 4 electrically connected to the wiring conductor 3a. The N-type thermoelectric elements 2a and the P-type thermoelectric elements 2b have different values of resistivity.

摘要翻译： 热电模块11包括支撑基板1a和1b，设置在支撑基板1a和1b上的相同数量的N型热电元件2a和P型热电元件2b，布线导体3a和3b 串联的热电元件与电连接到布线导体3a的外部连接端子4电连接。 N型热电元件2a和P型热电元件2b具有不同的电阻率值。

公开(公告)号：US08519256B2

公开(公告)日：2013-08-27

申请号：US13227314

申请日：2011-09-07

申请人： Kenichi Tajima ,  Koichi Tanaka

发明人： Kenichi Tajima ,  Koichi Tanaka

IPC分类号： H01L35/16

CPC分类号： H01L35/16 ,  C22C12/00 ,  H01L23/38 ,  H01L35/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： T provide an N type thermoelectric material having figure of the merit improved to be comparable to or higher than that of P type thermoelectric material, the N type thermoelectric material of the present invention contains at least one kind of Bi and Sb and at least one kind of Te and Se as main components, and contains bromine (Br) and iodine (I) to have carrier in such a concentration that corresponds to the contents of bromine (Br) and iodine (I).

摘要翻译： T提供具有改善了与P型热电材料相当或更高的品质因数的N型热电材料，本发明的N型热电材料包含至少一种Bi和Sb以及至少一种 的Te和Se为主要成分，并含有溴（Br）和碘（I），其载体的浓度对应于溴（Br）和碘（I）的含量。

公开(公告)号：US09064929B2

公开(公告)日：2015-06-23

申请号：US12153519

申请日：2008-05-20

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/762 ,  H01L21/3065 ,  H01L21/66

CPC分类号： H01L21/76254 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/014

摘要： There is disclosed a method for manufacturing an SOI wafer comprising: a step of implanting at least one of a hydrogen ion and a rare gas ion into a donor wafer to form an ion implanted layer; a step of bonding an ion implanted surface of the donor wafer to a handle wafer; a step of delaminating the donor wafer at the ion implanted layer to reduce a film thickness of the donor wafer, thereby providing an SOI layer; and a step of etching the SOI layer to reduce a thickness of the SOI layer, wherein the etching step includes: a stage of performing rough etching as wet etching; a stage of measuring a film thickness distribution of the SOI layer after the rough etching; and a stage of performing precise etching as dry etching based on the measured film thickness distribution of the SOI layer. There can be provided A method for manufacturing an SOI wafer having high film thickness uniformity of an SOI layer with excellent productivity.

摘要翻译： 公开了一种用于制造SOI晶片的方法，包括：将氢离子和稀有气体离子中的至少一种注入施主晶片以形成离子注入层的步骤; 将施主晶片的离子注入表面接合到处理晶片的步骤; 在离子注入层分层施主晶片以降低施主晶片的膜厚，从而提供SOI层的步骤; 以及蚀刻所述SOI层以减小所述SOI层的厚度的步骤，其中所述蚀刻步骤包括：执行粗蚀刻的阶段，如湿蚀刻; 在粗蚀刻之后测量SOI层的膜厚分布的阶段; 以及基于所测量的SOI层的膜厚分布，进行干蚀刻的精确蚀刻的阶段。 可以提供一种以优异的生产率制造具有SOI层的高膜厚均匀性的SOI晶片的方法。

公开(公告)号：US20150148174A1

公开(公告)日：2015-05-28

申请号：US14534470

申请日：2014-11-06

申请人： Koichi Nakamura ,  Koichi Tanaka

发明人： Koichi Nakamura ,  Koichi Tanaka

IPC分类号： F16D41/07 ,  F16H1/28 ,  F16H57/04 ,  B60K17/04

CPC分类号： F16D41/07 ,  B60K1/00 ,  B60K2001/001 ,  B60Y2306/03 ,  F16D41/06 ,  F16D2041/0601 ,  F16D2300/06 ,  F16H1/28 ,  F16H57/0467

摘要： Providing an electric vehicle transaxle suppressing occurrence of wear, seizure, etc. of a one-way clutch as compared to a conventional one. When an electric motor MG is driven and a one-way clutch 34 moves in a rotation axis C1 direction, the one-way clutch 34 comes into contact with a flange portion 46b of an inner race 46 or a supporting portion 30b of a transaxle housing 30 via a sliding washer 74 and, therefore, direct contact is prevented between the one-way clutch 34 and the flange portion 46b of the inner race 46 or the supporting portion 30b and wear, seizure, etc. of the one-way clutch 34 are suppressed.

摘要翻译： 提供一种电动车辆驱动桥，与传统的相比，抑制单向离合器的磨损，咬合等的发生。 当电动机MG被驱动并且单向离合器34沿旋转轴线C1方向移动时，单向离合器34与内座圈46的凸缘部分46b或驱动桥壳体的支撑部分30b接触 因此，单向离合器34与内座圈46或支承部30b的凸缘部46b之间的直接接触被防止，单向离合器34的磨损，咬住等 被压制。

公开(公告)号：US09003926B2

公开(公告)日：2015-04-14

申请号：US13057422

申请日：2009-04-28

申请人： Yoshihiro Mizuno ,  Koichi Tanaka ,  Yusuke Ogata

发明人： Yoshihiro Mizuno ,  Koichi Tanaka ,  Yusuke Ogata

IPC分类号： F16H41/30 ,  F16H47/06 ,  F16H41/02 ,  F16H7/06 ,  F16H45/02 ,  F16H57/04

CPC分类号： F16H41/02 ,  F16H7/06 ,  F16H41/30 ,  F16H45/02 ,  F16H57/0441 ,  Y10T74/19149 ,  Y10T74/19153

摘要： An oil passage structure of a chain-driven oil pump includes three lines of oil passages for supplying oil from the center support to the torque converter, a first oil passage for supplying oil to the torque converter through the inside of an input shaft of the torque converter, a second oil passage for supplying oil to the torque converter through a space defined by the outer periphery surface of the input shaft and the inner periphery surface of a stator shaft, and a third oil passage for supplying oil to the torque converter by bypassing the drive sprocket. The third oil passage is provided on the outer periphery side of the drive sprocket and in a position where it does not interfere with the operation of a chain. Accordingly, it is possible to utilize the flex lock-up to a maximum extent, and to reduce the diameter of the sprocket.

摘要翻译： 链式油泵的油路结构包括从中心支撑件向变矩器供给油的三条油路，用于通过扭矩输入轴的内部向变矩器供给油的第一油路 转换器，用于通过由输入轴的外周面和定子轴的内周面限定的空间向变矩器供给油的第二油路，以及用于通过旁路向变矩器供油的第三油路 驱动链轮。 第三油路设置在驱动链轮的外周侧，并且在不干扰链的操作的位置。 因此，可以最大程度地利用弯曲锁定，并且减小链轮的直径。

公开(公告)号：US08881883B2

公开(公告)日：2014-11-11

申请号：US13460349

申请日：2012-04-30

申请人： Augusto E. Barton ,  William Randall Fong ,  Gary Allen Pinkley ,  Edwin Marcum Pearce, Jr. ,  Kunio Morisawa ,  Kazunori Kaneko ,  Koichi Tanaka

发明人： Augusto E. Barton ,  William Randall Fong ,  Gary Allen Pinkley ,  Edwin Marcum Pearce, Jr. ,  Kunio Morisawa ,  Kazunori Kaneko ,  Koichi Tanaka

IPC分类号： F16H63/38 ,  B60T1/06

CPC分类号： B60T1/062 ,  F16H63/3425 ,  Y10T74/19637

摘要： A park lock of a transmission, including a park gear; a park pawl rotating about a pawl shaft, the park pawl having a pawl portion locking the park gear, the park pawl including a cam contact portion; a park rod responsive to an operation of a controller, the park rod having a cam portion pressing the cam contact portion to have park pawl engage the park gear; a park sleeve receiving the cam portion and defining a first contact point providing a reactive force to the cam contact portion of the park pawl pressing against the cam portion at a second contact point; a pawl torsional spring biasing the park pawl towards disengagement; and a pawl stopper limiting the rotation of the park pawl wherein motions are constrained within a plane of the transmission and components are rotatingly disposed in parallel axis bores in one half of a transmission case.

摘要翻译： 变速器的公园锁，包括公园装备; 围绕棘爪轴旋转的驻车爪，所述停车爪具有锁定所述公园齿轮的棘爪部分，所述驻车棘爪包括凸轮接触部分; 响应于控制器的操作的停放杆，所述停放杆具有按压所述凸轮接触部分以具有驻车爪的凸轮部分接合所述驻车齿轮; 接收所述凸轮部分并且限定向所述驻车棘爪的凸轮接触部分提供反作用力的第一接触点，所述第一接触点在第二接触点处抵靠所述凸轮部分; 一个棘爪扭力弹簧将公园爪偏压分离; 以及限制驻车爪的旋转的棘爪止动器，其中运动被限制在变速器的平面内，并且部件在变速箱的一半中旋转地设置在平行的轴孔中。