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公开(公告)号：US6026704A
公开(公告)日：2000-02-22
申请号：US904763
申请日：1997-08-01
CPC分类号： B62D1/192 , B29C45/14491 , F16D3/06
摘要： A steering shaft includes: an outer shaft having an inner splined portion; an inner shaft having a shaft portion and an outer splined portion which are arranged continuously along an axial direction; a retaining portion formed on at least one of the outer splined portion and the shaft portion; a sliding coupling section formed by a coupling portion of the outer shaft and a coupling portion of the inner shaft so as to allow the outer shaft and the inner shaft to be telescopically slidable in the axial direction relative to each other by splines; and a sliding resin member which is filled in a space formed in the sliding coupling section between an opening portion of the outer shaft and the retaining portion of the inner shaft.
摘要翻译： 转向轴包括：具有内花键部分的外轴; 具有沿轴向连续配置的轴部和外花键部的内轴; 保持部，形成在所述外花键部和所述轴部中的至少一个上; 滑动联接部，其由所述外轴的联接部和所述内轴的联接部形成，以允许所述外轴和所述内轴在轴向方向上相对于彼此通过花键可伸缩地滑动; 以及滑动树脂构件，其被填充在形成在所述滑动联接部分中的空间中，所述空间在所述外轴的开口部分和所述内轴的保持部分之间。
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公开(公告)号：US06223619B1
公开(公告)日：2001-05-01
申请号：US09437609
申请日：1999-11-10
IPC分类号： B62D116
CPC分类号： B62D1/192 , B29C45/14491 , F16D3/06
摘要： A steering shaft includes: an outer shaft having an inner splined portion; an inner shaft having a shaft portion and an outer splined portion which are arranged continuously along an axial direction; a retaining portion formed on at least one of the outer splined portion and the shaft portion; a sliding coupling section formed by a coupling portion of the outer shaft and a coupling portion of the inner shaft so as to allow the outer shaft and the inner shaft to be telescopically slidable in the axial direction relative to each other by means of splines; and a sliding resin member which is filled in a space formed in the sliding coupling section between an opening portion of the outer shaft and the retaining portion of the inner shaft.
摘要翻译： 转向轴包括：具有内花键部分的外轴; 具有沿轴向连续配置的轴部和外花键部的内轴; 保持部，形成在所述外花键部和所述轴部中的至少一个上; 滑动联接部，其由所述外轴的联接部和所述内轴的联接部形成，以使得所述外轴和所述内轴能够通过花键相对于彼此在轴向方向上可伸缩地滑动; 以及滑动树脂构件，其被填充在形成在所述滑动联接部分中的空间中，所述空间在所述外轴的开口部分和所述内轴的保持部分之间。
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公开(公告)号：US10137929B2
公开(公告)日：2018-11-27
申请号：US14650706
申请日：2013-01-24
摘要： An electric power steering device for a vehicle includes a plurality of assist systems electromagnetically driving an electric motor. When a first or second assist system malfunctions, a malfunction state assist amount calculation part calculates an assist amount while decreasing a limit value at the vehicle stopping, to an amount smaller than a limit value at the vehicle moving. When a malfunction such as a disconnection or a fixing of the switching elements occurs in the first or second assist systems on the basis of a judgment result of a malfunction judgment function, an assist amount switching part supplies an assist amount received from the malfunction state assist amount calculation part to first and second motor drive control parts. When a malfunction occurs in one of the first and second assist systems, one of the first and second motor drive control parts drives the motor by using the assist amount.
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4.发明授权Method for manufacturing a piezoelectric film wafer, piezoelectric film element, and piezoelectric film device 有权制造压电薄膜晶片，压电薄膜元件和压电薄膜器件的方法公开(公告)号：US09231185B2
公开(公告)日：2016-01-05
申请号：US13137202
申请日：2011-07-27
IPC分类号： H01B13/00 , H01L41/08 , H05K3/10 , H01L21/67 , H01L41/187 , H01L41/332 , H01L41/314 , H01L41/316 , H01L41/318
CPC分类号： H01L41/0805 , H01L21/67069 , H01L41/1873 , H01L41/314 , H01L41/316 , H01L41/318 , H01L41/332 , H05K3/108 , Y10T428/24479
摘要： A method for manufacturing a piezoelectric film wafer includes a first processing step for carrying out an ion etching on a KNN piezoelectric film formed on a substrate by using a gas containing Ar, and a second processing step for carrying out a reactive ion etching by using a mixed etching gas containing a fluorine-based reactive gas and Ar after the first processing step.
摘要翻译： 一种压电薄膜晶片的制造方法，其特征在于，包括：通过使用含有Ar的气体，在形成于基板上的KNN压电薄膜进行离子蚀刻的第一加工工序;以及第二加工工序， 含有氟系反应性气体的混合蚀刻气体和第一处理工序后的Ar。
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公开(公告)号：US08446074B2
公开(公告)日：2013-05-21
申请号：US13636883
申请日：2011-03-24
IPC分类号： H01L41/187
CPC分类号： C23C14/025 , C23C14/088 , C23C14/35 , H01L41/0805 , H01L41/1873 , H01L41/316
摘要： There is provided a piezoelectric thin film element, comprising: a substrate 1; and a piezoelectric thin film 3 having an alkali niobium oxide-based perovskite structure represented by a composition formula (K1-xNax)yNbO3 provided on the substrate 1, wherein a carbon concentration of the piezoelectric thin film 3 is 2×1019/cm3 or less, or a hydrogen concentration of the piezoelectric thin film 3 is 4×1019/cm3 or less.
摘要翻译： 提供了一种压电薄膜元件，包括：基板1; 以及设置在基板1上的由组成式（K1-xNax）yNbO3表示的碱铌氧化物系钙钛矿结构的压电薄膜3，其中压电薄膜3的碳浓度为2×1019 / cm3以下 ，或压电薄膜3的氢浓度为4×1019 / cm3以下。
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6.发明申请公开(公告)号：US20130015392A1
公开(公告)日：2013-01-17
申请号：US13532081
申请日：2012-06-25
IPC分类号： H01L41/187 , H01L41/047 , H01L41/22 , H01L41/04
CPC分类号： H01L41/0805 , H01L41/1873 , H01L41/316
摘要： There is provided a piezoelectric film having an alkali niobate-based perovskite structure expressed by a general formula (NaxKyLiz)NbO3(0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1), wherein the alkali niobate has a crystal structure of a pseudo-cubic crystal, a tetragonal crystal, an orthorhombic crystal, a monoclinic crystal, a rhombohedral crystal, or has a crystal structure of coexistence of them, and when total of K—O bonding and K-Metal bonding is set as 100% in a binding state around K-atom of the alkali niobate, a K—O bonding ratio is 46.5% or more and a K-Metal bonding ratio is 53.5% or less, wherein the Metal indicates a metal atom included in the piezoelectric film.
摘要翻译： 提供了一种由通式（NaxKyLiz）NbO3（0＆amp; nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1,0＆amp; nlE; z＆nlE; 0.2，x + y + z = 1）表示的碱铌酸盐类钙钛矿结构的压电膜， 其中铌酸锂具有假立方晶体，四方晶体，正交晶体，单斜晶体，菱方晶体的晶体结构，或者具有共晶的晶体结构，并且当总共K-O键合 并且在铌酸碱钾的K原子附近的结合状态下将K金属键合设定为100％，K-O键合比为46.5％以上，K-金属键合比为53.5％以下，其中，金属 表示包含在压电膜中的金属原子。
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7.发明申请Method for manufacturing a piezoelectric film wafer, piezolelectric film element, and piezoelectric film device 有权压电薄膜晶片的制造方法，压电薄膜元件和压电薄膜元件公开(公告)号：US20120056508A1
公开(公告)日：2012-03-08
申请号：US13137689
申请日：2011-09-02
IPC分类号： H01L41/047 , H01L41/22 , B32B3/00 , H01L41/113 , H01L41/09
CPC分类号： H01L41/0805 , H01L41/1873 , H01L41/314 , H01L41/316 , H01L41/318 , H01L41/332 , Y10T428/24479
摘要： A method for manufacturing a piezoelectric film wafer includes an etching step for carrying out a dry etching on a piezoelectric film formed on a substrate by using a gas containing Ar, and a step of changing a rate of the dry etching by detecting a change in an emission peak intensity of Na in emitted ion plasma the piezoelectric film. The piezoelectric film is made of an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4≦x≦0.7).
摘要翻译： 一种压电薄膜晶片的制造方法，其特征在于，包括：通过使用含有Ar的气体，对形成在基板上的压电薄膜进行干蚀刻的蚀刻工序;以及通过检测所述干蚀刻 发射离子等离子体中Na的发射峰强度为压电薄膜。 压电膜由组成式（K1-xNax）NbO3（0.4＆amp; NlE; x＆amp; NlE; 0.7）表示的基于铌酸盐的钙钛矿结构制成。
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公开(公告)号：US08122204B2
公开(公告)日：2012-02-21
申请号：US12137443
申请日：2008-06-11
申请人： Mitsuhiro Nagao , Kenji Shibata , Satoru Kawmoto
发明人： Mitsuhiro Nagao , Kenji Shibata , Satoru Kawmoto
CPC分类号： G06F13/1694 , G06F11/1666 , G11C7/1045 , G11C7/1072 , G11C11/406 , G11C11/40622 , G11C11/4096 , Y02D10/14
摘要： Systems and methods for controlling memory devices are disclosed. In one embodiment, a memory system comprises a memory controller for forwarding a command signal and an address signal and for receiving and forwarding a data signal, and a first memory device for receiving the command signal and the address signal from the memory controller, where the first memory device comprises a first command judging circuit for receiving and forwarding the data signal and for decoding the command signal. The memory system further comprises a second memory device for receiving the command signal and the address signal from the memory controller, where the second memory device comprises a second command judging circuit for receiving and generating the data signal and for decoding the command signal. The command signal, the address signal and the data signal are commonly connected to the first memory device and the second memory device.
摘要翻译： 公开了用于控制存储器件的系统和方法。 在一个实施例中，存储器系统包括用于转发命令信号和地址信号并用于接收和转发数据信号的存储器控制器，以及用于从存储器控制器接收命令信号和地址信号的第一存储器件，其中 第一存储装置包括用于接收和转发数据信号并用于对命令信号进行解码的第一命令判断电路。 存储器系统还包括用于从存储器控制器接收命令信号和地址信号的第二存储器件，其中第二存储器件包括用于接收和产生数据信号并用于解码命令信号的第二命令判断电路。 命令信号，地址信号和数据信号共同连接到第一存储器件和第二存储器件。
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公开(公告)号：US08035281B2
公开(公告)日：2011-10-11
申请号：US12963222
申请日：2010-12-08
申请人： Kenji Shibata , Fumihito Oka
发明人： Kenji Shibata , Fumihito Oka
IPC分类号： H01L41/187
CPC分类号： H01L41/1873 , H01L41/0815 , H01L41/094
摘要： A sensor for detecting a physical quantity includes a piezoelectric thin film device having a lower electrode, a piezoelectric thin film and an upper electrode, and a voltage detecting device connected between the lower and upper electrodes of the piezoelectric thin film device. The piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0
摘要翻译： 用于检测物理量的传感器包括具有下电极，压电薄膜和上电极的压电薄膜器件，以及连接在压电薄膜器件的下电极和上电极之间的电压检测器件。 压电薄膜由（K1-xNax）NbO3（0
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公开(公告)号：US07902730B2
公开(公告)日：2011-03-08
申请号：US12771173
申请日：2010-04-30
申请人： Kenji Shibata , Fumihito Oka
发明人： Kenji Shibata , Fumihito Oka
IPC分类号： H01L41/083
CPC分类号： G01C19/5663 , H01L41/0815 , H01L41/094 , H01L41/1136 , H01L41/1873 , H01L41/29 , H01L41/316 , H01L41/319
摘要： A sensor or actuator includes a piezoelectric thin film device including a lower electrode, a piezoelectric thin film and an upper electrode, and a voltage detecting device connected between the lower and upper electrodes of the piezoelectric thin film device. The piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0
摘要翻译： 传感器或致动器包括压电薄膜器件，其包括下电极，压电薄膜和上电极，以及连接在压电薄膜器件的下电极和上电极之间的电压检测器件。 压电薄膜由（K1-xNax）NbO3（0
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