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公开(公告)号：US06221781B1
公开(公告)日：2001-04-24
申请号：US09321139
申请日：1999-05-27
IPC分类号： H01L2100
CPC分类号： H01L21/6719 , H01L21/67023 , H01L21/68785
摘要： A process chamber within which a wafer can moved between a transfer position, an etch position and a liquid application position with a single motion system. The process chamber is a spin-type apparatus including a rotatable chuck driven by a spin motor combined with a movable pedestal. The pedestal is preferably movable along with the chuck and the spin motor with a wafer supporting portion of the chuck located in an internal chamber that is defined by a rinse bowl portion of a lower chamber assembly that is sealingly connected to the top cover member. The pedestal is displaceable between any and all of its positions as driven by a single linear motion driving device. In a first position, the pedestal itself can also form an effective seal with the top cover member to create an etching chamber. In a transfer position, the pedestal can be positioned to provide access through a wafer transfer gate, such as by a robot. In a liquid application position, the chuck supports a wafer within a rinse bowl section of the internal chamber. The process chamber eliminates any need for opening and closing the internal process chamber by moving the top cover member. The method of processing a wafer utilizing the apparatus of the present invention is also described.
摘要翻译： 处理室，其中晶片可以在单个运动系统之间在转移位置，蚀刻位置和液体施加位置之间移动。 处理室是包括由与可动基座组合的旋转马达驱动的可旋转卡盘的旋转型装置。 基座优选地可随着卡盘和旋转马达一起移动，其中卡盘的晶片支撑部分位于由室密封地连接到顶盖构件的下腔室组件的冲洗碗部分限定的内部腔室中。 基座可以在由单个直线运动驱动装置驱动的任何位置之间移动。 在第一位置，台座本身也可以与顶盖构件形成有效的密封以产生蚀刻室。 在转移位置，基座可被定位成提供通过晶片传送门的通路，例如通过机器人。 在液体施加位置，卡盘支撑在内部腔室的冲洗碗部分内的晶片。 处理室消除了通过移动顶盖构件来打开和关闭内部处理室的任何需要。 还描述了利用本发明的装置处理晶片的方法。
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2.发明授权公开(公告)号：US07312161B2
公开(公告)日：2007-12-25
申请号：US11429572
申请日：2006-05-05
IPC分类号： H01I21/302
CPC分类号： H01L21/67086 , H01L21/67253 , Y10T436/12
摘要： The variability of immersion processes for treatment of semiconductor devices can be significantly lowered by initiating the termination of a treatment process according to a predetermined treatment termination protocol in a manner that takes into account the contribution of, in particular, the treatment that is carried out during the period of time in the treatment process in which the treatment process is being terminated. In a preferred embodiment, conditions that indicate the progress of the treatment on a real time basis are monitored, and the timing of the initiation of the termination process is additionally based on the calculated amount of treatment and treatment rate of the process in progress.
摘要翻译： 通过根据预定的治疗终止方案开始终止治疗过程，可以显着降低用于治疗半导体器件的浸渍方法的变异性，其方式考虑到特别是在 治疗过程终止的治疗过程中的时间。 在优选实施例中，监视指示实时进行治疗的条件，另外基于计算出的处理过程的处理量和进行中的处理率来启动终止处理的时间。
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公开(公告)号：US5942037A
公开(公告)日：1999-08-24
申请号：US773489
申请日：1996-12-23
申请人： Thomas J. Wagener , Kevin L. Siefering , Pamela A. Kunkel , James F. Weygand , Gregory P. Thomes
发明人： Thomas J. Wagener , Kevin L. Siefering , Pamela A. Kunkel , James F. Weygand , Gregory P. Thomes
摘要： A nozzle having a series of orifices along a longitudinal length of the nozzle for processing a substrate and which is rotatably adjustable. By the nozzle design of the present invention, liquid is properly distributed along the longitudinal length of the nozzle independently of the angle of the aerosol spray. This allows for the generation of a uniform aerosol stream that is independent of spray angle. The nozzle design of the present invention improves the uniform distribution of liquid within the nozzle, which in addition to providing a more uniform liquid pooling, also substantially eliminates temporal non-uniformities across the nozzle length. Moreover, the present invention is also directed to a nozzle that is translatable in the direction toward or away from the substrate to be processed or parallel to the substrate surface. The nozzle includes a series of impingement orifices provided in a longitudinal direction along at least a part of the nozzle, wherein the nozzle has an interior longitudinally divided into first and second internal cavities with plural openings between the first and second internal cavities, and the openings between the first and second cavities are oriented at a different radial angle from the longitudinal axis than the radial angle of the impingement orifices. Preferably, the nozzle comprises an inner tube and an outer tube operatively supported and connected with respect to one another. The present invention is also directed to the combination of such a nozzle that is rotationally and translatably adjustable independently from one another.
摘要翻译： 一种喷嘴，其具有沿着喷嘴的纵向长度的一系列孔口，用于处理基板并且可旋转地调节。 通过本发明的喷嘴设计，独立于气溶胶喷雾的角度，液体沿着喷嘴的纵向长度适当地分布。 这允许产生独立于喷雾角度的均匀气溶胶流。 本发明的喷嘴设计提高了喷嘴内液体的均匀分布，除了提供更均匀的液体池之外，还基本上消除了穿过喷嘴长度的时间不均匀性。 此外，本发明还涉及一种可在朝向或远离待处理基板或与基板表面平行的方向上平移的喷嘴。 该喷嘴包括沿着喷嘴的至少一部分在纵向上设置的一系列冲击孔，其中喷嘴具有纵向分成第一和第二内腔的内部，在第一和第二内腔之间具有多个开口，并且开口 第一和第二空腔之间的距离与纵向轴线的径向角度不同于冲击孔的径向角度。 优选地，喷嘴包括可操作地支撑并相对于彼此连接的内管和外管。 本发明还涉及这样的喷嘴的组合，所述喷嘴可相互独立地旋转地且可平移地调节。
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公开(公告)号：US5224265A
公开(公告)日：1993-07-06
申请号：US783959
申请日：1991-10-29
CPC分类号： H05K3/462 , H01L21/4857 , H01L23/5384 , H01L23/5385 , H05K3/4069 , H01L2924/0002 , H01L2924/09701 , H05K1/05 , H05K1/095 , H05K2201/068 , H05K2201/09509 , H05K2201/09536 , H05K2201/0959 , H05K2201/096 , H05K2203/063 , H05K2203/066 , H05K3/281 , H05K3/429 , Y10T29/49155 , Y10T29/49165
摘要： Multilayer thin film structures are fabricated in a parallel manner by creating testable sub-units and then joining them together to form a finished three-dimensional wiring matrix. Thus, there is disclosed a process for the fabrication of a thin film wiring structure including the steps of:forming a core wiring structure which includes the steps of:a. providing a low expansion, metallic, patterned core material;b. encapsulating the core material in a dielectric material;c. forming vias in the dielectric material; andd. metallizing the dielectric material in the vias and on the surface of the dielectric material;forming at least one cover laminate which includes dielectric material and a low expansion, metallic carrier;laminating the at least one cover laminate to the core wiring structure wherein the dielectric material of the cover laminate is in contact with the core wiring structure;forming vias through the cover laminate, the vias communicating with the vias in the core wiring structure; and filling the vias in the cover laminate and the core wiring structure with a conductive material, thereby forming a thin film wiring sub-unit.Thereafter, a plurality of such sub-units are fabricated simultaneously, tested and then stacked and aligned on a stiffener, such as multilayer ceramic substrate, before being laminated to form a three-dimensional wiring matrix.
摘要翻译： 通过制造可测试的子单元然后将它们连接在一起以形成完成的三维布线矩阵，以并行方式制造多层薄膜结构。 因此，公开了一种制造薄膜布线结构的方法，包括以下步骤：形成芯布线结构，其包括以下步骤：a。 提供低膨胀，金属，图案化的芯材料; b。 将芯材料包封在电介质材料中; C。 在电介质材料中形成通孔; 和d。 在介电材料的通孔和表面上金属化电介质材料; 形成包括介电材料和低膨胀金属载体的至少一个覆盖层压体; 将所述至少一个覆盖层压体层压到所述芯线路结构，其中所述覆盖层压体的电介质材料与所述芯线路结构接触; 通过所述覆盖层叠体形成通孔，所述通孔与所述芯线路结构中的通孔连通; 并且用导电材料填充覆盖层叠体和芯线路结构中的通孔，从而形成薄膜布线子单元。 此后，在层压之前，多个这样的子单元同时制造，测试，然后堆叠并对准在诸如多层陶瓷基板的加强件上，以形成三维布线矩阵。
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5.发明授权Method for transferring a microelectronic device to and from a processing chamber 有权将微电子器件传送到处理室和从处理室传送微电子器件的方法公开(公告)号：US06251195B1
公开(公告)日：2001-06-26
申请号：US09351939
申请日：1999-07-12
IPC分类号： B08B100
CPC分类号： H01L21/67748 , H01L21/67028
摘要： An apparatus having a processing chamber for processing a semiconductor wafer under evacuated conditions that is capable of transfer of the wafer from the processing chamber under conditions that are substantially equal to the pressure of an adjacent environment. In a preferred embodiment, the processing chamber is pressurized and vented with a source of high purity dry gas that is diffused into the chamber through a diffuser to pressurize the processing chamber after processing of the wafer is completed. A chamber equalization port between the processing chamber and the adjacent environment is opened to maintain the pressure within the chamber at or slightly above the pressure of the adjacent environment, and the chamber valve is then opened. The wafer can then be removed from the processing chamber, and a new wafer can be inserted. The chamber is then sealed by closing the chamber valve and the equalization port, and the atmosphere within the processing chamber is evacuated to a desired level. The new wafer is then processed, and the above steps are repeated to remove the wafer once processing has finished.
摘要翻译： 一种装置，具有用于在真空条件下处理半导体晶片的处理室，该条件能够在基本上等于相邻环境的压力的条件下从处理室传送晶片。 在优选实施例中，处理室被加压并且用高纯度干燥气体源排出，该干燥气体源通过扩散器扩散到室中，以在晶片的处理完成之后加压处理室。 打开处理室和相邻环境之间的室平衡端口，以将室内的压力维持在或略高于相邻环境的压力，然后打开室阀。 然后可以从处理室移除晶片，并且可以插入新的晶片。 然后通过关闭室阀和均衡端口来密封室，并且处理室内的气氛被抽空到期望的水平。 然后处理新的晶片，一旦处理完成，就重复上述步骤以移除晶片。
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公开(公告)号：US5810942A
公开(公告)日：1998-09-22
申请号：US712342
申请日：1996-09-11
CPC分类号： H01L21/67028 , B08B15/023 , B24C1/003 , B24C3/322 , B24C9/003
摘要： An aerosol cleaning apparatus and a method of treating a substrate within such an apparatus prevent contaminant recirculation by controlling the post-impingement exhaust flow through control of the aerodynamic behavior of the contaminant laden exhaust stream. By the present invention, the post-impingement exhaust flow is divided into two streams. A first stream is the main stream flowing initially over the contaminated side of the wafer and carrying most of the suspended contaminants into the exhaust. The second stream flows initially over the cleaned side of the wafer and eventually into the exhaust stream. A flow separator is provided for dividing the post-impingement aerosol spray into plural flow streams. Additionally, the aerosol chamber can advantageously include a shroud positioned within the aerosol chamber just to the side of the nozzle but further away from the exhaust than the nozzle for restricting flow from the second post-impingement stream around the nozzle and into the first post-impingement stream. In accordance with a preferred embodiment, the apparatus is designed for cleaning the surface of a semiconductor wafer by impinging the surface with a cryogenic aerosol spray.
摘要翻译： 气溶胶清洁装置和在这种装置内处理基板的方法通过控制负载污染物排气流的空气动力学行为来控制后冲击排气流来防止污染物再循环。 通过本发明，后冲击排气流被分成两股。 第一流是最初在晶片的污染侧流动的主流，并将大部分悬浮的污染物携带到排气中。 第二流最初流过清洁的晶片侧并最终流入排气流中。 提供流动分离器用于将后冲击气溶胶喷雾分成多个流动流。 此外，气溶胶室可以有利地包括位于喷雾室内的护罩，其刚好在喷嘴的侧面，但是比喷嘴更远离排气口，用于限制从喷嘴周围的第二后冲击流流入第一后冲击流， 冲击流。 根据优选实施例，该设备被设计用于通过用低温气溶胶喷雾冲击该表面来清洁半导体晶片的表面。
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公开(公告)号：US5373701A
公开(公告)日：1994-12-20
申请号：US88454
申请日：1993-07-07
CPC分类号： F17C9/02 , F25J3/08 , F17C2203/0391 , F17C2205/0149 , F17C2221/014 , F17C2221/017 , F17C2221/033 , F17C2221/05 , F17C2223/0161 , F17C2227/0304 , F17C2227/0311 , F25J2215/44 , F25J2220/44 , F25J2290/62
摘要： A cryogenic station for delivering a cryogen substantially free of higher boiling impurities. The cryogenic station includes an insulated main tank and an auxiliary tank. Liquid stored in the main tank and pressurized by a pressure building circuit is driven into the auxiliary tank. Cryogenic vapor formed in the auxiliary tank is warmed to ambient temperature by an external heat exchanger and is then recirculated back to an internal heat exchanger located within the auxiliary tank. The internal heat exchanger is configured such that a portion of the cryogen driven into the auxiliary tank is vaporized to form the cryogenic vapor and a remaining portion of such cryogen is left within the auxiliary tank to substantially retain the higher boiling impurities in a solidified state. As such, the cryogenic vapor is substantially free from the impurities when delivered as a product stream.
摘要翻译： 用于输送基本上不含较高沸点杂质的冷冻剂的低温站。 低温站包括绝缘主油箱和辅助油箱。 存储在主箱中并由压力建筑电路加压的液体被驱动到辅助箱中。 在辅助罐中形成的低温蒸汽通过外部热交换器升温至环境温度，然后再循环回位于辅助罐内的内部热交换器。 内部热交换器被配置为使得驱动到辅助罐中的一部分冷冻剂被蒸发以形成低温蒸气，并且这种冷冻剂的剩余部分留在辅助罐内以基本上保持较高沸点的杂质处于固化状态。 因此，当作为产物流输送时，低温蒸气基本上不含杂质。
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8.发明授权
公开(公告)号：US5304796A
公开(公告)日：1994-04-19
申请号：US858388
申请日：1992-03-25
CPC分类号： G01N33/0014
摘要： The present invention provides a method of analyzing a gas sample for trace impurity concentration by atmospheric pressure ionization mass spectroscopy. In accordance with the present invention, moisture is removed from the gas sample before analysis by passing the gas sample through a dried bed of silica gel. The bed of silica gel is sufficiently dried so that remaining moisture present in the gas sample after passage through the bed is at a sufficiently low concentration such that the trace impurity concentration as analyzed by atmospheric ionization mass spectroscopy will not be effected by the remaining moisture.
摘要翻译： 本发明提供了一种通过大气压电离质谱分析痕量杂质浓度的气体样品的方法。 根据本发明，通过使气体样品通过硅胶的干燥床，在分析前将气体从气体样品中除去。 将硅胶床充分干燥，使得通过床后气体样品中存在的剩余水分处于足够低的浓度，使得通过大气电离质谱分析的微量杂质浓度将不受剩余水分影响。
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9.发明授权Edge gripping device for handling a set of semiconductor wafers in an immersion processing system 失效用于在浸没处理系统中处理一组半导体晶片的边缘夹持装置公开(公告)号：US06845779B2
公开(公告)日：2005-01-25
申请号：US10292807
申请日：2002-11-11
IPC分类号： H01L21/683 , H01L21/00 , H01L21/304 , H01L21/673 , B08B9/20 , B65D85/30
CPC分类号： H01L21/67313 , H01L21/67057 , H01L21/67086 , Y10S134/902
摘要： A microelectronic substrate handling device comprising first and second support structures spaced from each other, the first support structure having a series of upper teeth defining a series of upper notches extending along a length of the first support structure and a series of lower teeth defining a series of lower notches extending along a length of the first support structure, each of the upper and lower notches opening toward the second support structure, wherein the upper and lower notches are offset from each other by a predetermined offset distance so that an edge of a microelectronic device will fit differently within the upper and lower notches of the first support structure when supported between the first and second support structures.
摘要翻译： 一种微电子衬底处理装置，包括彼此间隔开的第一和第二支撑结构，所述第一支撑结构具有限定一系列沿所述第一支撑结构的长度延伸的一系列上槽口的一系列上齿，以及限定一系列的一系列下齿 下槽口沿着第一支撑结构的长度延伸，每个上槽口和下槽口朝向第二支撑结构开口，其中上下槽口彼此偏移预定的偏移距离，使得微电子的边缘 当支撑在第一和第二支撑结构之间时，装置将在第一支撑结构的上部和下部凹口内不同地配合。
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10.发明授权Processing apparatus for microelectronic devices in which polymeric bellows are used to help accomplish substrate transport inside of the apparatus 失效用于微电子装置的处理装置，其中使用聚合物波纹管来帮助实现装置内部的基板输送公开(公告)号：US06284006B1
公开(公告)日：2001-09-04
申请号：US09440388
申请日：1999-11-15
IPC分类号： H01L2144
CPC分类号： H01L21/67748 , H01L21/67126 , H01L21/6719 , H01L21/68742 , H01L21/68785 , H01L21/68792 , Y10T29/41
摘要： Transport system that allows in-process microelectronic devices inside a chamber to be easily moved, regardless of whether the chamber is open or sealed. Advantageously, the source of in-process device motion is located outside of the chamber, while the motion is transferred to the wafer via a polymeric bellows. Inside the chamber, there are no parts of the system that rub against other componentry. Consequently, the system generates little, if any, contaminants.
摘要翻译： 允许室内的过程中的微电子器件容易移动的运输系统，而不管腔室是打开还是密封。 有利地，过程中装置运动源位于腔室外部，而运动通过聚合物波纹管传送到晶片。 在室内，系统中没有任何部分与其他组件相互摩擦。 因此，系统产生很少（如果有的话）污染物。
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