Combination hood microwave oven
    1.
    发明授权
    Combination hood microwave oven 有权
    组合罩微波炉

    公开(公告)号:US06992273B2

    公开(公告)日:2006-01-31

    申请号:US10757989

    申请日:2004-01-16

    IPC分类号: H05B6/80

    摘要: Disclosed is a combination hood microwave oven, by which a room environment is maintained more pleasant and fresh by proving a microwave oven with an air curtain generating unit for preventing polluted air, which includes hot, smelling, or humid air produced from an oven range on cooking, from diffusing into a room. The present invention includes a cabinet disposed over an oven range, a cooking room having a predetermined cavity within the cabinet for cooking using an electromagnetic wave generated from a magnetron, a hood unit installed within the cabinet to discharge polluted air produced from the oven range on cooking, and an air curtain generating unit installed at a bottom side of the cabinet to prevent the polluted air from diffusing into a room.

    摘要翻译: 公开了一种组合罩微波炉,通过用用于防止污染空气的空气幕发生单元的微波炉,通过微波炉保持室内环境更加愉快和新鲜,该空气包括由烘箱范围内产生的热,嗅觉或潮湿空气 烹饪,从扩散到一个房间。 本发明包括一个设置在烤箱范围内的柜体,一个烹调室,在机壳内具有一个预定的空腔,用于使用由磁控管产生的电磁波进行烹饪,一个安装在机柜内的发动机罩,用于将从烘箱范围产生的污染空气排出 烹调和安装在机柜底部的气帘产生单元,以防止污染的空气扩散到房间中。

    Combined microwave oven and hood
    2.
    发明授权
    Combined microwave oven and hood 有权
    组合微波炉和罩

    公开(公告)号:US07098432B2

    公开(公告)日:2006-08-29

    申请号:US10915649

    申请日:2004-08-09

    IPC分类号: H05B6/80

    CPC分类号: F24C15/2028 H05B6/6423

    摘要: A combined microwave oven and hood is provided. The combined microwave oven and hood includes a cavity assembly including a cavity and an electronic equipment room disposed at one side of the cavity, a blower for generating an absorptive power of contaminated air, a filter for filtering the contaminated air absorbed through the blower, and a drawer type air curtain module, which is transferred to a front side of the cavity assembly as operated.

    摘要翻译: 提供组合的微波炉和罩。 组合的微波炉和罩包括空腔组件,其包括空腔和设置在空腔一侧的电子设备室,用于产生受污染空气的吸收能力的鼓风机,用于过滤通过鼓风机吸收的污染空气的过滤器,以及 抽屉式气帘模块,其被运送到空腔组件的前侧。

    Heat sink and method for processing surfaces thereof
    3.
    发明申请
    Heat sink and method for processing surfaces thereof 审中-公开
    散热器及其表面处理方法

    公开(公告)号:US20050253251A1

    公开(公告)日:2005-11-17

    申请号:US11055079

    申请日:2005-02-11

    摘要: A heat sink and a method for processing the surfaces of the heat sink are disclosed. The heat sink and a method for processing the surfaces of the heat sink can improve performance of heat dissipation of the heat sink per volume as a plurality of fine wires based on nanometer or micrometer units are grown on the surfaces of the base and heat-dissipative fins of the heat sink through an oxidation process. Here, the total volume of the heat sink is scarcely increased, but rather their surface area and surface roughness are increased.

    摘要翻译: 公开了一种散热器和用于处理散热器表面的方法。 散热器和用于处理散热器表面的方法可以提高散热器每体积的散热性能,因为基于纳米或微米单位的多根细线生长在基底表面上并具有散热性 通过氧化过程散热片的散热片。 这里,散热器的总体积几乎不增加,而是其表面积和表面粗糙度增加。

    Multilayer ceramic condenser and method for manufacturing the same
    5.
    发明授权
    Multilayer ceramic condenser and method for manufacturing the same 有权
    多层陶瓷电容器及其制造方法

    公开(公告)号:US08804305B2

    公开(公告)日:2014-08-12

    申请号:US13191890

    申请日:2011-07-27

    IPC分类号: H01G4/06

    摘要: Disclosed are a multilayer ceramic condenser and a method for manufacturing the same. There is provided a multilayer ceramic condenser including: a multilayer main body in which a plurality of dielectric layers including a first side, a second side, a third side, and a fourth side are stacked; a first cover layer and a second cover layer forming the plurality of dielectric layers; a first dielectric layer disposed between the first cover layer and the second cover layer and printed with a first inner electrode pattern drawn to the first side; a second dielectric layer alternately stacked with the first dielectric layer and printed with a second inner electrode pattern drawn to the third side; and a first side portion and a second side portion each formed on the second side and the fourth side opposite to each other.

    摘要翻译: 公开了一种多层陶瓷电容器及其制造方法。 提供了一种多层陶瓷电容器,包括:多层主体,其中堆叠包括第一侧,第二侧,第三侧和第四侧的多个电介质层; 形成所述多个电介质层的第一覆盖层和第二覆盖层; 第一电介质层,设置在第一覆盖层和第二覆盖层之间,并印刷有第一内部电极图案,其被绘制到第一侧; 第二电介质层,与所述第一电介质层交替堆叠并且印刷有第二内部电极图案,所述第二内部电极图案被绘制到所述第三侧; 以及分别形成在彼此相对的第二侧和第四侧上的第一侧部和第二侧部。

    Metal layer structure of semiconductor device
    9.
    发明授权
    Metal layer structure of semiconductor device 有权
    半导体器件的金属层结构

    公开(公告)号:US07495340B2

    公开(公告)日:2009-02-24

    申请号:US11646698

    申请日:2006-12-28

    申请人: Jong Hoon Kim

    发明人: Jong Hoon Kim

    IPC分类号: H01L23/48 H01L23/52

    摘要: A metal layer structure of a semiconductor memory device is disclosed. The metal layer structure includes: a first metal layer to be connected to a contact plug; and a plurality of a second metal layers that are formed in parallel at a second spaced distance around the first metal layer, wherein a spaced distance of the second metal layers nearest the first metal layer maintains the second spaced distance which is wider than a first spaced distance of the second metal layers around the contact plug, and the spaced distance of the second metal layer next to the first metal layer maintains a third spaced distance, which is narrower than the second spaced distance, and the spaced distance between adjacent second metal layers gradually decreases to eventually be equal to the first spaced distance, for the second metal layers farthest from the first metal layer. Accordingly, an alignment margin can be ensured without requiring more area, and the contact plug can be connected to the next metal layer, even if an alignment error is produced.

    摘要翻译: 公开了一种半导体存储器件的金属层结构。 金属层结构包括:要连接到接触插塞的第一金属层; 以及多个第二金属层,所述多个第二金属层以围绕所述第一金属层的第二间隔距离平行地形成,其中所述第二金属层与所述第一金属层最近的间隔距离保持第二间隔距离, 第二金属层围绕接触塞的距离以及与第一金属层相邻的第二金属层的间隔距离保持比第二间隔距离窄的第三间隔距离,并且相邻的第二金属层之间的间隔距离 对于距离第一金属层最远的第二金属层,逐渐减小以最终等于第一间隔距离。 因此,即使产生对准误差,也可以确保对准余量而不需要更多的面积,并且可以将接触插塞连接到下一个金属层。