公开(公告)号：US20050051828A1

公开(公告)日：2005-03-10

申请号：US10828596

申请日：2004-04-21

申请人： Ki-yeon Park ,  Sung-tae Kim ,  Young-sun Kim ,  In-sung Park ,  Jae-hyun Yeo ,  Yun-jung Lee ,  Ki-vin Im

发明人： Ki-yeon Park ,  Sung-tae Kim ,  Young-sun Kim ,  In-sung Park ,  Jae-hyun Yeo ,  Yun-jung Lee ,  Ki-vin Im

IPC分类号： H01L21/20 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01B1/00 ,  H01L27/108 ,  H01L29/94 ,  H01L31/119 ,  H01L21/31

CPC分类号： H01L21/0228 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/45553 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31604 ,  H01L27/1085

摘要： The present invention provides methods of forming metal thin films, lanthanum oxide films and high dielectric films. Compositions of metal thin films, lanthanum oxide films and high dielectric films are also provided. Further provided are semiconductor devices comprising the metal thin films, lanthanum oxide films and high dielectric films provided herein.

摘要翻译： 本发明提供形成金属薄膜，氧化镧膜和高介电膜的方法。 还提供了金属薄膜，氧化镧薄膜和高介电薄膜的组成。 还提供了包括金属薄膜，氧化镧膜和本文提供的高介电膜的半导体器件。

公开(公告)号：US20070259212A1

公开(公告)日：2007-11-08

申请号：US11778278

申请日：2007-07-16

申请人： Ki-yeon Park ,  Sung-tae Kim ,  Young-sun Kim ,  In-sung Park ,  Jae-hyun Yeo ,  Yun-jung Lee ,  Ki-vin Im

发明人： Ki-yeon Park ,  Sung-tae Kim ,  Young-sun Kim ,  In-sung Park ,  Jae-hyun Yeo ,  Yun-jung Lee ,  Ki-vin Im

IPC分类号： B32B9/00 ,  B32B19/00

CPC分类号： H01L21/0228 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/45553 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31604 ,  H01L27/1085

摘要： The present invention provides methods of forming metal thin films, lanthanum oxide films and high dielectric films. Compositions of metal thin films, lanthanum oxide films and high dielectric films are also provided. Further provided are semiconductor devices comprising the metal thin films, lanthanum oxide films and high dielectric films provided herein.

摘要翻译： 本发明提供形成金属薄膜，氧化镧膜和高介电膜的方法。 还提供了金属薄膜，氧化镧薄膜和高介电薄膜的组成。 还提供了包括金属薄膜，氧化镧膜和本文提供的高介电膜的半导体器件。

公开(公告)号：US07217669B2

公开(公告)日：2007-05-15

申请号：US10888838

申请日：2004-07-12

申请人： Han-mei Choi ,  Sung-tae Kim ,  Young-wook Park ,  Young-sun Kim ,  Ki-chul Kim ,  In-sung Park

发明人： Han-mei Choi ,  Sung-tae Kim ,  Young-wook Park ,  Young-sun Kim ,  Ki-chul Kim ,  In-sung Park

IPC分类号： H01L21/31

CPC分类号： H01L21/02356 ,  C23C16/405 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31604

摘要： A method of forming a dielectric film composed of metal oxide under an atmosphere of activated vapor containing oxygen. In the method of forming the dielectric film, a metal oxide film is formed on a semiconductor substrate using a metal organic precursor and O2 gas while the semiconductor substrate is exposed under activated vapor atmosphere containing oxygen, and then, the metal oxide film is annealed while the semiconductor substrate is exposed under activated vapor containing oxygen. The annealing may take place in situ with the formation of the metal oxide film, at the same or substantially the same temperature as the metal oxide forming, and/or at least one of a different pressure, oxygen concentration, or oxygen flow rate as the metal oxide forming.

摘要翻译： 在含氧活性蒸气气氛下形成由金属氧化物构成的电介质膜的方法。 在形成电介质膜的方法中，使用金属有机前体和O 2 O 2气体在半导体衬底上形成金属氧化物膜，同时半导体衬底在含有氧的活性气氛下暴露，然后 在半导体衬底在含有氧气的活性蒸气下暴露的同时对金属氧化物膜进行退火。 退火可以在与形成金属氧化物相同或基本上相同的温度下形成金属氧化物膜，和/或至少一种不同的压力，氧浓度或氧气流速的情况下进行，如 金属氧化物形成。

公开(公告)号：US06800570B2

公开(公告)日：2004-10-05

申请号：US10131473

申请日：2002-04-25

申请人： Han-mei Choi ,  Sung-tae Kim ,  Young-wook Park ,  Young-sun Kim ,  Ki-chul Kim ,  In-sung Park

发明人： Han-mei Choi ,  Sung-tae Kim ,  Young-wook Park ,  Young-sun Kim ,  Ki-chul Kim ,  In-sung Park

IPC分类号： H01L2131

CPC分类号： H01L21/02356 ,  C23C16/405 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31604

摘要： A method of forming a dielectric film composed of metal oxide under an atmosphere of activated vapor containing oxygen. In the method of forming the dielectric film, a metal oxide film is formed on a semiconductor substrate using a metal organic precursor and O2 gas while the semiconductor substrate is exposed under activated vapor atmosphere containing oxygen, and then, the metal oxide film is annealed while the semiconductor substrate is exposed under activated vapor containing oxygen. The annealing may take place in situ with the formation of the metal oxide film, at the same or substantially the same temperature as the metal oxide forming, and/or at at least one of a different pressure, oxygen concentration, or oxygen flow rate as the metal oxide forming.

公开(公告)号：US06919243B2

公开(公告)日：2005-07-19

申请号：US10043027

申请日：2002-01-09

申请人： Jeong-hee Chung ,  In-sung Park ,  Jae-hyun Yeo

发明人： Jeong-hee Chung ,  In-sung Park ,  Jae-hyun Yeo

IPC分类号： H01L27/04 ,  C23C16/18 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8242

CPC分类号： H01L28/60 ,  C23C16/18 ,  H01L21/31604 ,  H01L21/31683 ,  H01L28/90

摘要： An integrated circuit capacitor is manufactured by forming a lower electrode on a substrate and forming a metal preprocessed layer on the lower electrode using chemical vapor deposition in which a metal precursor is used as a source gas and the metal precursor comprises oxygen. A dielectric layer is then formed on the metal preprocessed layer and an upper electrode is formed on the dielectric layer. The metal preprocessed layer may reduce oxidation of the lower electrode due to oxygen supplied during formation of the dielectric layer.

摘要翻译： 通过在基板上形成下电极并使用其中使用金属前体作为源气体并且金属前体包含氧的化学气相沉积在下电极上形成金属预处理层来制造集成电路电容器。 然后在金属预处理层上形成电介质层，并且在电介质层上形成上电极。 金属预处理层可以由于在形成介电层期间供应的氧而减少下电极的氧化。

公开(公告)号：US06884675B2

公开(公告)日：2005-04-26

申请号：US10808141

申请日：2004-03-24

申请人： Jeong-hee Chung ,  In-sung Park ,  Jae-hyun Yeo

发明人： Jeong-hee Chung ,  In-sung Park ,  Jae-hyun Yeo

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L21/02205 ,  C23C16/405 ,  C23C16/45553 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/31683 ,  H01L21/31691 ,  H01L28/40

摘要： Semiconductor capacitors comprise first electrodes, second electrodes, and tantalum oxide layers positioned between the first electrodes and the second electrodes. The tantalum oxide layers are formed by depositing at least one precursor and ozone gas, the at least one precursor represented by the formula: wherein X is selected from the group consisting of nitrogen, sulfur, oxygen, and a carbonyl group; and wherein R1 and R2 are independently alkyl.

摘要翻译： 半导体电容器包括位于第一电极和第二电极之间的第一电极，第二电极和氧化钽层。 通过沉积至少一种前体和臭氧气体形成氧化钽层，所述至少一种前体由下式表示：其中X选自氮，硫，氧和羰基; 并且其中R 1和R 2独立地为烷基。

公开(公告)号：US06734480B2

公开(公告)日：2004-05-11

申请号：US10047706

申请日：2002-01-15

申请人： Jeong-hee Chung ,  In-sung Park ,  Jae-hyun Yeo

发明人： Jeong-hee Chung ,  In-sung Park ,  Jae-hyun Yeo

IPC分类号： H01L27108

CPC分类号： H01L21/02205 ,  C23C16/405 ,  C23C16/45553 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/31683 ,  H01L21/31691 ,  H01L28/40

摘要： A semiconductor capacitor comprising: a first electrode; a second electrode; and a tantalum oxide layer positioned between said first electrode and said second electrodes. The tantalum oxide layer formed by depositing at least one precursor and ozone gas, the at least one precursor represented by the formula: wherein X is selected from the group consisting of nitrogen, sulfur, oxygen, and a carbonyl group; and wherein R1 and R2 are independently alkyl.

摘要翻译： 半导体电容器包括位于第一电极和第二电极之间的第一电极，第二电极和氧化钽层。 通过沉积至少一种前体和臭氧气体形成氧化钽层，所述至少一种前体由下式表示：其中X选自氮，硫，氧和羰基; 并且其中R 1和R 2独立地为烷基。

公开(公告)号：US5780115A

公开(公告)日：1998-07-14

申请号：US806145

申请日：1997-02-25

申请人： In-sung Park ,  Byoung-taek Lee

发明人： In-sung Park ,  Byoung-taek Lee

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H05H1/00 ,  B05D3/06

CPC分类号： H01L28/60

摘要： A method for fabricating an integrated circuit capacitor includes the steps of forming a first electrode on a microelectronic substrate, and plasma treating the first electrode with a with a plasma of a gas including nitrogen and oxygen. A dielectric film is formed on the plasma treated first electrode opposite the microelectronic substrate. A second electrode is formed on the dielectric film opposite the plasma treated first electrode.

摘要翻译： 一种用于制造集成电路电容器的方法包括以下步骤：在微电子衬底上形成第一电极，以及用包括氮和氧的气体等离子体等离子体处理第一电极。 在与微电子衬底相对的等离子体处理的第一电极上形成电介质膜。 在与等离子体处理的第一电极相对的电介质膜上形成第二电极。

公开(公告)号：US5837593A

公开(公告)日：1998-11-17

申请号：US707298

申请日：1996-09-03

申请人： In-sung Park ,  Eui-song Kim

发明人： In-sung Park ,  Eui-song Kim

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/203 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/20

CPC分类号： H01L28/40 ,  H01L28/82 ,  H01L21/31604

摘要： A microelectronic capacitor is formed by forming a first tantalum pentoxide film on a conductive electrode and annealing the first tantalum pentoxide film in the presence of ultraviolet radiation and ozone. The forming step and annealing step are then repeated at least once to form at least a second tantalum pentoxide film which has been annealed in the presence of ultraviolet radiation, on the first tantalum pentoxide film. A second conductive electrode may then be formed on the tantalum pentoxide layer. The resultant tantalum pentoxide layer can have a thickness which exceeds 45 .ANG., yet has a reduced leakage current by filling the oxygen vacancies across the thickness thereof.

摘要翻译： 通过在导电电极上形成第一五氧化二钽膜并在紫外线和臭氧的存在下退火第一五氧化二钽膜来形成微电子电容器。 然后，将形成步骤和退火步骤重复至少一次以形成至少一种在紫外线辐射下退火的第五个五氧化二钽膜。 然后可以在五氧化二钽层上形成第二导电电极。 所得五氧化二钽层的厚度可以超过45埃，但是通过在其厚度上填充氧空位具有减小的漏电流。

公开(公告)号：US5859760A

公开(公告)日：1999-01-12

申请号：US843799

申请日：1997-04-21

申请人： In-sung Park ,  Kyung-hoon Kim

发明人： In-sung Park ,  Kyung-hoon Kim

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/822 ,  H01G4/06

CPC分类号： H01L28/40

摘要： A microelectronic capacitor is formed by nitrating the surface of a conducting electrode on a microelectronic substrate. The nitrated surface of the conductive electrode is then oxidized. The nitrating and oxidizing steps collectively form a film of silicon oxynitride on the conductive electrode. A tantalum pentoxide film is then formed on the oxidized and nitrated surface of the conductive electrode. The tantalum pentoxide film may then be thermally treated in the presence of oxygen gas. High performance microelectronic capacitors are thereby provided.

摘要翻译： 通过在微电子衬底上硝化导电电极的表面形成微电子电容器。 然后将导电电极的硝化表面氧化。 硝化和氧化步骤在导电电极上共同形成氮氧化硅膜。 然后在导电电极的氧化和硝化表面上形成五氧化二钽膜。 然后可以在氧气存在下对五氧化钽膜进行热处理。 从而提供高性能微电子电容器。