公开(公告)号：US20070259212A1

公开(公告)日：2007-11-08

申请号：US11778278

申请日：2007-07-16

申请人： Ki-yeon Park ,  Sung-tae Kim ,  Young-sun Kim ,  In-sung Park ,  Jae-hyun Yeo ,  Yun-jung Lee ,  Ki-vin Im

发明人： Ki-yeon Park ,  Sung-tae Kim ,  Young-sun Kim ,  In-sung Park ,  Jae-hyun Yeo ,  Yun-jung Lee ,  Ki-vin Im

IPC分类号： B32B9/00 ,  B32B19/00

CPC分类号： H01L21/0228 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/45553 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31604 ,  H01L27/1085

摘要： The present invention provides methods of forming metal thin films, lanthanum oxide films and high dielectric films. Compositions of metal thin films, lanthanum oxide films and high dielectric films are also provided. Further provided are semiconductor devices comprising the metal thin films, lanthanum oxide films and high dielectric films provided herein.

摘要翻译： 本发明提供形成金属薄膜，氧化镧膜和高介电膜的方法。 还提供了金属薄膜，氧化镧薄膜和高介电薄膜的组成。 还提供了包括金属薄膜，氧化镧膜和本文提供的高介电膜的半导体器件。

公开(公告)号：US20050051828A1

公开(公告)日：2005-03-10

申请号：US10828596

申请日：2004-04-21

申请人： Ki-yeon Park ,  Sung-tae Kim ,  Young-sun Kim ,  In-sung Park ,  Jae-hyun Yeo ,  Yun-jung Lee ,  Ki-vin Im

发明人： Ki-yeon Park ,  Sung-tae Kim ,  Young-sun Kim ,  In-sung Park ,  Jae-hyun Yeo ,  Yun-jung Lee ,  Ki-vin Im

IPC分类号： H01L21/20 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242 ,  H01B1/00 ,  H01L27/108 ,  H01L29/94 ,  H01L31/119 ,  H01L21/31

CPC分类号： H01L21/0228 ,  C23C16/40 ,  C23C16/45529 ,  C23C16/45553 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31604 ,  H01L27/1085

摘要： The present invention provides methods of forming metal thin films, lanthanum oxide films and high dielectric films. Compositions of metal thin films, lanthanum oxide films and high dielectric films are also provided. Further provided are semiconductor devices comprising the metal thin films, lanthanum oxide films and high dielectric films provided herein.

摘要翻译： 本发明提供形成金属薄膜，氧化镧膜和高介电膜的方法。 还提供了金属薄膜，氧化镧薄膜和高介电薄膜的组成。 还提供了包括金属薄膜，氧化镧膜和本文提供的高介电膜的半导体器件。

公开(公告)号：US06599807B2

公开(公告)日：2003-07-29

申请号：US10034043

申请日：2001-12-20

申请人： Jae-soon Lim ,  Seung-hwan Lee ,  Han-mei Choi ,  Yun-jung Lee ,  Gab-jin Nam ,  Ki-yeon Park ,  Young-sun Kim ,  Sung-tae Kim

发明人： Jae-soon Lim ,  Seung-hwan Lee ,  Han-mei Choi ,  Yun-jung Lee ,  Gab-jin Nam ,  Ki-yeon Park ,  Young-sun Kim ,  Sung-tae Kim

IPC分类号： H01L2972

CPC分类号： H01L28/55

摘要： A method for manufacturing a capacitor of a semiconductor device is provided. The method includes the steps of: forming a first electrode on a semiconductor substrate; forming a dielectric layer on the first electrode; forming a second electrode on the dielectric layer; first annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under oxygen atmosphere; and second annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under vacuum.

公开(公告)号：US07510931B2

公开(公告)日：2009-03-31

申请号：US11605452

申请日：2006-11-29

申请人： Ki-yeon Park ,  Han-mei Choi ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim

发明人： Ki-yeon Park ,  Han-mei Choi ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim

IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L21/4763

CPC分类号： H01L29/792 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/3162 ,  H01L29/513 ,  H01L29/66833

摘要： A method of fabricating a nonvolatile memory device includes forming a charge tunneling layer on a semiconductor substrate, forming a charge trapping layer on the charge tunneling layer, forming a first charge blocking layer on the charge trapping layer by supplying a metal source gas and a first oxidizing gas onto the charge trapping layer, forming a second charge blocking layer on the first charge blocking layer by supplying a metal source gas and a second oxidizing gas onto the first charge blocking layer, wherein the second oxidizing gas has a higher oxidizing power as compared to the first oxidizing gas, and forming a gate electrode layer on the second charge blocking layer.

摘要翻译： 一种制造非易失性存储器件的方法包括：在半导体衬底上形成电荷隧穿层，在电荷隧道层上形成电荷俘获层，在电荷俘获层上形成第一电荷阻挡层，通过提供金属源气体和第一 在电荷捕获层上氧化气体，通过在第一电荷阻挡层上提供金属源气体和第二氧化气体，在第一电荷阻挡层上形成第二电荷阻挡层，其中第二氧化气体具有较高的氧化能力， 并且在第二电荷阻挡层上形成栅极电极层。

公开(公告)号：US20080096349A1

公开(公告)日：2008-04-24

申请号：US11605452

申请日：2006-11-29

申请人： Ki-yeon Park ,  Han-mei Choi ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim

发明人： Ki-yeon Park ,  Han-mei Choi ,  Seung-hwan Lee ,  Sung-tae Kim ,  Young-sun Kim

IPC分类号： H01L21/336

CPC分类号： H01L29/792 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/3162 ,  H01L29/513 ,  H01L29/66833

摘要： A method of fabricating a nonvolatile memory device includes forming a charge tunneling layer on a semiconductor substrate, forming a charge trapping layer on the charge tunneling layer, forming a first charge blocking layer on the charge trapping layer by supplying a metal source gas and a first oxidizing gas onto the charge trapping layer, forming a second charge blocking layer on the first charge blocking layer by supplying a metal source gas and a second oxidizing gas onto the first charge blocking layer, wherein the second oxidizing gas has a higher oxidizing power as compared to the first oxidizing gas, and forming a gate electrode layer on the second charge blocking layer.

摘要翻译： 一种制造非易失性存储器件的方法包括：在半导体衬底上形成电荷隧穿层，在电荷隧道层上形成电荷俘获层，在电荷俘获层上形成第一电荷阻挡层，通过提供金属源气体和第一 在电荷捕获层上氧化气体，通过在第一电荷阻挡层上提供金属源气体和第二氧化气体，在第一电荷阻挡层上形成第二电荷阻挡层，其中第二氧化气体具有较高的氧化能力， 并且在第二电荷阻挡层上形成栅极电极层。

公开(公告)号：US07217669B2

公开(公告)日：2007-05-15

申请号：US10888838

申请日：2004-07-12

申请人： Han-mei Choi ,  Sung-tae Kim ,  Young-wook Park ,  Young-sun Kim ,  Ki-chul Kim ,  In-sung Park

发明人： Han-mei Choi ,  Sung-tae Kim ,  Young-wook Park ,  Young-sun Kim ,  Ki-chul Kim ,  In-sung Park

IPC分类号： H01L21/31

CPC分类号： H01L21/02356 ,  C23C16/405 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31604

摘要： A method of forming a dielectric film composed of metal oxide under an atmosphere of activated vapor containing oxygen. In the method of forming the dielectric film, a metal oxide film is formed on a semiconductor substrate using a metal organic precursor and O2 gas while the semiconductor substrate is exposed under activated vapor atmosphere containing oxygen, and then, the metal oxide film is annealed while the semiconductor substrate is exposed under activated vapor containing oxygen. The annealing may take place in situ with the formation of the metal oxide film, at the same or substantially the same temperature as the metal oxide forming, and/or at least one of a different pressure, oxygen concentration, or oxygen flow rate as the metal oxide forming.

摘要翻译： 在含氧活性蒸气气氛下形成由金属氧化物构成的电介质膜的方法。 在形成电介质膜的方法中，使用金属有机前体和O 2 O 2气体在半导体衬底上形成金属氧化物膜，同时半导体衬底在含有氧的活性气氛下暴露，然后 在半导体衬底在含有氧气的活性蒸气下暴露的同时对金属氧化物膜进行退火。 退火可以在与形成金属氧化物相同或基本上相同的温度下形成金属氧化物膜，和/或至少一种不同的压力，氧浓度或氧气流速的情况下进行，如 金属氧化物形成。

公开(公告)号：US06800570B2

公开(公告)日：2004-10-05

申请号：US10131473

申请日：2002-04-25

申请人： Han-mei Choi ,  Sung-tae Kim ,  Young-wook Park ,  Young-sun Kim ,  Ki-chul Kim ,  In-sung Park

发明人： Han-mei Choi ,  Sung-tae Kim ,  Young-wook Park ,  Young-sun Kim ,  Ki-chul Kim ,  In-sung Park

IPC分类号： H01L2131

CPC分类号： H01L21/02356 ,  C23C16/405 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31604

摘要： A method of forming a dielectric film composed of metal oxide under an atmosphere of activated vapor containing oxygen. In the method of forming the dielectric film, a metal oxide film is formed on a semiconductor substrate using a metal organic precursor and O2 gas while the semiconductor substrate is exposed under activated vapor atmosphere containing oxygen, and then, the metal oxide film is annealed while the semiconductor substrate is exposed under activated vapor containing oxygen. The annealing may take place in situ with the formation of the metal oxide film, at the same or substantially the same temperature as the metal oxide forming, and/or at at least one of a different pressure, oxygen concentration, or oxygen flow rate as the metal oxide forming.

公开(公告)号：US06893501B2

公开(公告)日：2005-05-17

申请号：US10320407

申请日：2002-12-17

申请人： Ki-chul Kim ,  Sung-tae Kim ,  Young-sun Kim ,  Jeong-hee Chung ,  Wan-don Kim ,  Yun-jung Lee ,  Han-mei Choi

发明人： Ki-chul Kim ,  Sung-tae Kim ,  Young-sun Kim ,  Jeong-hee Chung ,  Wan-don Kim ,  Yun-jung Lee ,  Han-mei Choi

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8242 ,  C30B25/04

CPC分类号： H01L28/57 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02356 ,  H01L21/31637 ,  H01L27/1085 ,  H01L28/65

摘要： A method for manufacturing a capping layer covering a capacitor of a semiconductor memory device, preferably a metal-insulator-metal (MIM) capacitor, wherein the method includes forming a capacitor having a lower electrode, a dielectric layer and an upper electrode on a semiconductor substrate, forming a capping layer on the capacitor, and crystallizing the dielectric layer. Here, forming the capping layer includes stabilizing for deposition of the capping layer without providing oxygen gas, depositing the capping layer by providing a reaction source for the capping layer; and purging an inside of a reactor for forming the capping layer.

摘要翻译： 一种覆盖半导体存储器件的电容器，优选金属 - 绝缘体 - 金属（MIM）电容器的覆盖层的方法，其中所述方法包括在半导体上形成具有下电极，电介质层和上电极的电容器 衬底，在电容器上形成覆盖层，并使介电层结晶。 这里，形成覆盖层包括在不提供氧气的情况下沉积封盖层的稳定性，通过为封盖层提供反应源沉积覆盖层; 并且清洗用于形成覆盖层的反应器的内部。

公开(公告)号：US06680251B2

公开(公告)日：2004-01-20

申请号：US10080000

申请日：2002-02-21

申请人： Seok-jun Won ,  Cha-young Yoo ,  Sung-tae Kim ,  Young-wook Park ,  Yun-jung Lee ,  Soon-yeon Park

发明人： Seok-jun Won ,  Cha-young Yoo ,  Sung-tae Kim ,  Young-wook Park ,  Yun-jung Lee ,  Soon-yeon Park

IPC分类号： H01L2144

CPC分类号： H01L21/28556 ,  C23C16/0272 ,  C23C16/40 ,  H01L21/28568 ,  H01L28/55 ,  H01L28/60

摘要： A layer is formed by chemical vapor depositing a seeding layer of ruthenium oxide on a substrate at a chemical vapor deposition flow rate ratio of a ruthenium source to oxygen gas. A main layer of ruthenium is chemical vapor deposited on the seeding layer by increasing the chemical vapor deposition flow rate ratio of the ruthenium source to the oxygen gas.

摘要翻译： 通过以钌源与氧气的化学气相沉积流速比在化学气相沉积基底上的氧化钌晶面层形成层。 钌的主层通过提高钌源与氧气的化学气相沉积流速比化学气相沉积在接种层上。

公开(公告)号：US07144771B2

公开(公告)日：2006-12-05

申请号：US10616056

申请日：2003-07-09

申请人： Gab-jin Nam ,  Seung-hwan Lee ,  Ki-chul Kim ,  Jae-soon Lim ,  Sung-tae Kim ,  Young-sun Kim

发明人： Gab-jin Nam ,  Seung-hwan Lee ,  Ki-chul Kim ,  Jae-soon Lim ,  Sung-tae Kim ,  Young-sun Kim

IPC分类号： H01L21/8242

CPC分类号： H01L21/02186 ,  C23C16/405 ,  H01L21/02183 ,  H01L21/02194 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31604 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Methods of forming an electronic device include providing a fist electrode, providing a dielectric oxide layer on the first electrode, and providing a second electrode on the dielectric oxide layer so that the dielectric oxide layer is between the first and second electrodes. More particularly, a first portion of the dielectric oxide layer adjacent the first electrode can have a first density of titanium, and a second portion of the dielectric oxide layer opposite the first electrode can have a second density of titanium different than the first density. Related structures are also discussed.

摘要翻译： 形成电子器件的方法包括提供第一电极，在第一电极上提供电介质氧化物层，并在电介质氧化物层上提供第二电极，使得电介质氧化物层位于第一和第二电极之间。 更具体地，与第一电极相邻的电介质氧化物层的第一部分可以具有第一密度的钛，并且与第一电极相对的电介质氧化物层的第二部分可具有不同于第一密度的钛的第二密度。 还讨论了相关结构。