公开(公告)号：US08247782B2

公开(公告)日：2012-08-21

申请号：US12745059

申请日：2010-05-27

申请人： Klaus Edinger ,  Rainer Becker ,  Michael Budach ,  Thorsten Hofmann

发明人： Klaus Edinger ,  Rainer Becker ,  Michael Budach ,  Thorsten Hofmann

IPC分类号： H01J49/22 ,  G21K5/02

CPC分类号： C23F4/00 ,  H01J37/3056 ,  H01J2237/28 ,  H01J2237/3174 ,  H01L21/76894 ,  H01L22/22 ,  H01L2924/0002 ,  H01L2924/00

摘要： An apparatus and a method for investigating and/or modifying a sample is disclosed. The apparatus comprises a charged particle source, at least one particle optical element forming a charged particle beam of charged particles emitted by said charged particle source. The apparatus further comprises an objective lens which generates a charged particle probe from said charged particle beam. The objective lens defines a particle optical axis. A first electrostatic deflection element is arranged—in a direction of propagation of charged particles emitted by said charged particle source—downstream of the objective lens. The electrostatic deflection element deflecting the charged particle beam in a direction perpendicular to said charged particle optical axis and has a deflection bandwidth of at least 10 MHz.

摘要翻译： 公开了一种用于调查和/或修改样品的装置和方法。 所述装置包括带电粒子源，至少一个粒子光学元件，形成由所述带电粒子源发射的带电粒子的带电粒子束。 该装置还包括从所述带电粒子束产生带电粒子探针的物镜。 物镜定义了粒子光轴。 第一静电偏转元件布置在由物镜的下游的所述带电粒子源发射的带电粒子的传播方向上。 静电偏转元件使垂直于所述带电粒子光轴的方向偏转带电粒子束并具有至少10MHz的偏转带宽。

公开(公告)号：US20110210181A1

公开(公告)日：2011-09-01

申请号：US12745059

申请日：2010-05-27

申请人： Klaus Edinger ,  Rainer Becker ,  Michael Budach ,  Thorsten Hofmann

发明人： Klaus Edinger ,  Rainer Becker ,  Michael Budach ,  Thorsten Hofmann

IPC分类号： B05B5/025

CPC分类号： C23F4/00 ,  H01J37/3056 ,  H01J2237/28 ,  H01J2237/3174 ,  H01L21/76894 ,  H01L22/22 ,  H01L2924/0002 ,  H01L2924/00

摘要： An apparatus and a method for investigating and/or modifying a sample is disclosed. The apparatus comprises a charged particle source, at least one particle optical element forming a charged particle beam of charged particles emitted by said charged particle source. The apparatus further comprises an objective lens which generates a charged particle probe from said charged particle beam. The objective lens defines a particle optical axis. A first electrostatic deflection element is arranged—in a direction of propagation of charged particles emitted by said charged particle source—downstream of the objective lens. The electrostatic deflection element deflecting the charged particle beam in a direction perpendicular to said charged particle optical axis and has a deflection bandwidth of at least 10 MHz.

摘要翻译： 公开了一种用于调查和/或修改样品的装置和方法。 所述装置包括带电粒子源，至少一个粒子光学元件，形成由所述带电粒子源发射的带电粒子的带电粒子束。 该装置还包括从所述带电粒子束产生带电粒子探针的物镜。 物镜定义了粒子光轴。 第一静电偏转元件布置在由物镜的下游的所述带电粒子源发射的带电粒子的传播方向上。 静电偏转元件使垂直于所述带电粒子光轴的方向偏转带电粒子束并具有至少10MHz的偏转带宽。

公开(公告)号：US08674329B2

公开(公告)日：2014-03-18

申请号：US13805960

申请日：2011-06-24

申请人： Michael Budach ,  Tristan Bret ,  Klaus Edinger ,  Thorsten Hofmann ,  Heiko Feldmann ,  Johannes Ruoff

发明人： Michael Budach ,  Tristan Bret ,  Klaus Edinger ,  Thorsten Hofmann ,  Heiko Feldmann ,  Johannes Ruoff

IPC分类号： G21K5/04

CPC分类号： G01N21/95 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/48 ,  G03B27/68 ,  G03F1/24 ,  G03F1/72 ,  G03F1/74 ,  G03F1/84 ,  G03F7/705 ,  G03F7/7065 ,  G06F17/5009 ,  G06T7/0002 ,  G21K5/00

摘要： The invention relates to a method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) comprising the steps of: (a) generating at least one focus stack relating to the defect using an EUV mask inspection tool, (b) determining a surface configuration of the EUV mask at a position of the defect, (c) providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks, and (d) determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures.

摘要翻译： 本发明涉及一种用于分析用于极紫外（EUV）波长范围（EUV掩模）的光刻掩模的缺陷的方法，包括以下步骤：（a）使用EUV掩模检查产生与缺陷有关的至少一个焦点叠层 工具，（b）在缺陷的位置确定EUV掩模的表面结构，（c）提供具有确定的表面配置的模型结构，其具有不同的相位误差并产生相应的焦点堆叠，以及（d）确定三维 通过比较所述缺陷的至少一个生成的焦点堆栈和所产生的模型结构的焦点堆栈，来确定EUV掩模缺陷的三维误差结构。

公开(公告)号：US20100297362A1

公开(公告)日：2010-11-25

申请号：US12848871

申请日：2010-08-02

申请人： Michael Budach ,  Tristan Bret ,  Klaus Edinger ,  Thorsten Hofmann

发明人： Michael Budach ,  Tristan Bret ,  Klaus Edinger ,  Thorsten Hofmann

IPC分类号： C23C8/06

CPC分类号： G03F1/74 ,  C23C16/047 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/24495 ,  H01J2237/30466 ,  H01J2237/30483 ,  H01J2237/31732 ,  H01J2237/31744

摘要： A method for processing an object with miniaturized structures is provided. The method includes feeding a reaction gas onto a surface of the object. The method also includes processing the object by directing an energetic beam onto a processing site in a region, which is to be processed, on the surface of the object, in order to deposit material on the object or to remove material from the object. The method further includes detecting interaction products of the beam with the object, and deciding whether the processing of the object is to be continued or can be terminated with the aid of information which is obtained from the detected interaction products of the beam with the object. The region to be processed is subdivided into a number of surface segments, and the interaction products detected upon the beam striking regions of the same surface segment are integrated to form a total signal in order to determine whether processing of the object must be continued or can be terminated.

摘要翻译： 提供了一种用小型化结构处理物体的方法。 该方法包括将反应气体进料到物体的表面上。 该方法还包括通过将能量束引导到物体表面上待处理的区域中的处理位置上以便将物质沉积在物体上或从物体上去除材料来处理物体。 该方法还包括检测光束与物体的相互作用产物，并且借助于从检测到的与物体的光束的相互作用产物获得的信息来确定物体的处理是继续还是可以终止。 要处理的区域被细分成多个表面段，并且在相同表面段的射束区域上检测到的相互作用产物被积分以形成总信号，以便确定物体的处理是否必须继续或可以 被终止。

公开(公告)号：US20130156939A1

公开(公告)日：2013-06-20

申请号：US13805960

申请日：2011-06-24

申请人： Michael Budach ,  Tristan Bret ,  Klaus Edinger ,  Thorsten Hofmann ,  Heiko Feldmann ,  Johannes Ruoff

发明人： Michael Budach ,  Tristan Bret ,  Klaus Edinger ,  Thorsten Hofmann ,  Heiko Feldmann ,  Johannes Ruoff

IPC分类号： G01N21/95 ,  G06F17/50 ,  G03B27/68 ,  G06T7/00 ,  C23C14/48 ,  G21K5/00

CPC分类号： G01N21/95 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/48 ,  G03B27/68 ,  G03F1/24 ,  G03F1/72 ,  G03F1/74 ,  G03F1/84 ,  G03F7/705 ,  G03F7/7065 ,  G06F17/5009 ,  G06T7/0002 ,  G21K5/00

摘要： The invention relates to a method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) comprising the steps of: (a) generating at least one focus stack relating to the defect using an EUV mask inspection tool, (b) determining a surface configuration of the EUV mask at a position of the defect, (c) providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks, and (d) determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures.

摘要翻译： 本发明涉及一种用于分析用于极紫外（EUV）波长范围（EUV掩模）的光刻掩模的缺陷的方法，包括以下步骤：（a）使用EUV掩模检查产生与缺陷有关的至少一个焦点叠层 工具，（b）在缺陷的位置确定EUV掩模的表面结构，（c）提供具有确定的表面配置的模型结构，其具有不同的相位误差并产生相应的焦点堆叠，以及（d）确定三维 通过比较所述缺陷的至少一个生成的焦点堆栈和所产生的模型结构的焦点堆栈，来确定EUV掩模缺陷的三维误差结构。

公开(公告)号：US08318593B2

公开(公告)日：2012-11-27

申请号：US13058493

申请日：2009-08-07

申请人： Nicole Auth ,  Petra Spies ,  Rainer Becker ,  Thorsten Hofmann ,  Klaus Edinger

发明人： Nicole Auth ,  Petra Spies ,  Rainer Becker ,  Thorsten Hofmann ,  Klaus Edinger

IPC分类号： H01L21/44

CPC分类号： C23C16/487 ,  C23C16/047 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76879 ,  H01L21/76892 ,  H01L21/76898

摘要： The invention relates to a method for electron beam induced deposition of electrically conductive material from a metal carbonyl with the method steps of providing at least one electron beam at a position of a substrate, storing at least one metal carbonyl at a first temperature, and heating the at least one metal carbonyl to at least one second temperature prior to the provision at the position at which the at least one electron beam impacts on the substrate.

摘要翻译： 本发明涉及一种用于电子束从金属羰基沉积导电材料的方法，其方法步骤是在衬底的位置处提供至少一个电子束，在第一温度下储存至少一种金属羰基，以及加热 所述至少一种金属羰基至少在所述至少一个电子束冲击所述基底的位置之前提供至少一个第二温度。

公开(公告)号：US20110183444A1

公开(公告)日：2011-07-28

申请号：US13058587

申请日：2009-08-13

申请人： Nicole Auth ,  Petra Spies ,  Rainer Becker ,  Thorsten Hofmann ,  Klaus Edinger

发明人： Nicole Auth ,  Petra Spies ,  Rainer Becker ,  Thorsten Hofmann ,  Klaus Edinger

IPC分类号： H01L21/66 ,  C23F1/08

CPC分类号： H01L21/3065 ,  H01L21/31116 ,  H01L21/32136

摘要： The invention relates to a method for electron beam induced etching of a material (100, 200) with the method steps providing at least one etching gas at a position of the material (100, 200) at which an electron beam impacts on the material (100, 200) and simultaneously providing at least one passivation gas which is adapted for slowing down or inhibiting a spontaneous etching by the at least one etching gas

摘要翻译： 本发明涉及一种用于电子束感应蚀刻材料（100,200）的方法，该方法步骤在电子束撞击材料（100,200）的位置提供至少一种蚀刻气体（ 100,200），并且同时提供至少一个钝化气体，所述钝化气体适于减缓或抑制所述至少一种蚀刻气体的自发蚀刻

公开(公告)号：US08623230B2

公开(公告)日：2014-01-07

申请号：US12744586

申请日：2008-12-18

申请人： Nicole Auth ,  Petra Spies ,  Tristan Bret ,  Rainer Becker ,  Thorsten Hofmann ,  Klaus Edinger

发明人： Nicole Auth ,  Petra Spies ,  Tristan Bret ,  Rainer Becker ,  Thorsten Hofmann ,  Klaus Edinger

IPC分类号： H01L21/302

CPC分类号： C23F4/00 ,  H01J37/3056 ,  H01J2237/28 ,  H01J2237/3174 ,  H01L21/76894 ,  H01L22/22 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present method relates to processes for the removal of a material from a sample by a gas chemical reaction activated by a charged particle beam. The method is a multiple step process wherein in a first step a gas is supplied which, when a chemical reaction between the gas and the material is activated, forms a non-volatile material component such as a metal salt or a metaloxide. In a second consecutive step the reaction product of the first chemical reaction is removed from the sample.

摘要翻译： 本方法涉及通过由带电粒子束激活的气体化学反应从样品中去除材料的方法。 该方法是多步骤方法，其中在第一步骤中，供应气体，当气体和材料之间的化学反应活化时，形成非挥发性物质组分如金属盐或金属氧化物。 在第二个连续步骤中，从样品中除去第一化学反应的反应产物。

公开(公告)号：US20110183517A1

公开(公告)日：2011-07-28

申请号：US13058493

申请日：2009-08-07

申请人： Nicole Auth ,  Petra Spies ,  Rainer Becker ,  Thorsten Hofmann ,  Klaus Edinger

发明人： Nicole Auth ,  Petra Spies ,  Rainer Becker ,  Thorsten Hofmann ,  Klaus Edinger

IPC分类号： H01L21/768 ,  G21K5/00 ,  H01L21/3205

CPC分类号： C23C16/487 ,  C23C16/047 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76879 ,  H01L21/76892 ,  H01L21/76898

摘要： The invention relates to a method for electron beam induced deposition of electrically conductive material from a metal carbonyl with the method steps of providing at least one electron beam at a position of a substrate (90), storing at least one metal carbonyl at a first temperature, and heating the at least one metal carbonyl to at least one second temperature prior to the provision at the position at which the at least one electron beam impacts on the substrate (90).

摘要翻译： 本发明涉及一种用于电子束从金属羰基沉积导电材料的方法，其方法步骤是在衬底（90）的位置处提供至少一个电子束，在第一温度下存储至少一种金属羰基 并且在所述至少一个电子束撞击到所述基板（90）的位置之前，将所述至少一种金属羰基加热至至少一个第二温度。

公开(公告)号：US09023666B2

公开(公告)日：2015-05-05

申请号：US13058587

申请日：2009-08-13

申请人： Nicole Auth ,  Petra Spies ,  Rainer Becker ,  Thorsten Hofmann ,  Klaus Edinger

发明人： Nicole Auth ,  Petra Spies ,  Rainer Becker ,  Thorsten Hofmann ,  Klaus Edinger

IPC分类号： H01L21/00 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/3065 ,  H01L21/31116 ,  H01L21/32136

摘要： The invention relates to a method for electron beam induced etching of a material (100, 200) with the method steps providing at least one etching gas at a position of the material (100, 200) at which an electron beam impacts on the material (100, 200) and simultaneously providing at least one passivation gas which is adapted for slowing down or inhibiting a spontaneous etching by the at least one etching gas.

摘要翻译： 本发明涉及一种用于电子束感应蚀刻材料（100,200）的方法，该方法步骤在电子束撞击材料（100,200）的位置提供至少一种蚀刻气体（ 100,200），并且同时提供至少一个钝化气体，该钝化气体适于减缓或抑制至少一种蚀刻气体的自发蚀刻。