公开(公告)号：US20120238109A1

公开(公告)日：2012-09-20

申请号：US13429901

申请日：2012-03-26

申请人： Shigeki Hattori ,  Ryota Kitagawa ,  Koji Asakawa

发明人： Shigeki Hattori ,  Ryota Kitagawa ,  Koji Asakawa

IPC分类号： H01L21/312

CPC分类号： G03F7/165 ,  B05D1/185 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/0046 ,  G03F7/0755 ,  G03F7/265 ,  H01L21/0337 ,  H01L21/306

摘要： According to one embodiment, a method of forming a pattern includes forming a monolayer on a substrate, selectively exposing the monolayer to an energy beam and selectively modifying exposed portions thereof to form patterns of exposed and unexposed portions, forming a block copolymer layer includes first and second block chains on the monolayer, and causing the block copolymer layer to be phase-separated to form patterns of the first and second block chains of the block copolymer layer based on the patterns of the exposed and unexposed portions of the monolayer.

摘要翻译： 根据一个实施例，形成图案的方法包括在衬底上形成单层，选择性地将单层暴露于能量束并选择性地修改曝光部分以形成暴露部分和未曝光部分的图案，形成嵌段共聚物层包括第一和 基于单层的暴露部分和未曝光部分的图案，使嵌段共聚物层相分离以形成嵌段共聚物层的第一和第二嵌段链的图案。

公开(公告)号：US08481246B2

公开(公告)日：2013-07-09

申请号：US13430185

申请日：2012-03-26

申请人： Koji Asakawa ,  Shigeki Hattori ,  Ryota Kitagawa

发明人： Koji Asakawa ,  Shigeki Hattori ,  Ryota Kitagawa

IPC分类号： G03C5/00

CPC分类号： G03F7/16 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0392

摘要： According to one embodiment, a method of forming a pattern includes applying a block copolymer to a substrate, the block copolymer including a first block and a second block, the first block including polyacrylate or polymethacrylate having a side chain to which an alicyclic hydrocarbon group or a hydrocarbon group including a tertiary carbon is introduced, and the second block including polystyrene substituted with hydrocarbon or halogen at an α-position, causing the block copolymer to be phase-separated, irradiating the block copolymer with an energy beam to decompose the second block, and removing the second block with a developer to form a pattern of the first block.

摘要翻译： 根据一个实施方案，形成图案的方法包括将嵌段共聚物施加到基材上，所述嵌段共聚物包括第一嵌段和第二嵌段，所述第一嵌段包括聚丙烯酸酯或聚甲基丙烯酸酯，所述侧链具有脂环族烃基或 引入包含叔碳的烃基，第二嵌段包括在α-位置被烃或卤素取代的聚苯乙烯，使嵌段共聚物相分离，用能量束照射嵌段共聚物以分解第二嵌段 并且用显影剂移除第二块以形成第一块的图案。

公开(公告)号：US09152053B2

公开(公告)日：2015-10-06

申请号：US13429901

申请日：2012-03-26

申请人： Shigeki Hattori ,  Ryota Kitagawa ,  Koji Asakawa

发明人： Shigeki Hattori ,  Ryota Kitagawa ,  Koji Asakawa

IPC分类号： G03F7/16 ,  G03F7/004 ,  G03F7/075 ,  G03F7/26 ,  H01L21/033 ,  H01L21/306 ,  B81C1/00 ,  B05D1/18

CPC分类号： G03F7/165 ,  B05D1/185 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/0046 ,  G03F7/0755 ,  G03F7/265 ,  H01L21/0337 ,  H01L21/306

摘要： According to one embodiment, a method of forming a pattern includes forming a monolayer on a substrate, selectively exposing the monolayer to an energy beam and selectively modifying exposed portions thereof to form patterns of exposed and unexposed portions, forming a block copolymer layer includes first and second block chains on the monolayer, and causing the block copolymer layer to be phase-separated to form patterns of the first and second block chains of the block copolymer layer based on the patterns of the exposed and unexposed portions of the monolayer.

摘要翻译： 根据一个实施例，形成图案的方法包括在衬底上形成单层，选择性地将单层暴露于能量束并选择性地修改曝光部分以形成暴露部分和未曝光部分的图案，形成嵌段共聚物层包括第一和 基于单层的暴露部分和未曝光部分的图案，使嵌段共聚物层相分离以形成嵌段共聚物层的第一和第二嵌段链的图案。

公开(公告)号：US09324914B2

公开(公告)日：2016-04-26

申请号：US12712693

申请日：2010-02-25

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Koji Asakawa

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/38 ,  H01L33/40 ,  H01L2933/0083

摘要： A semiconductor light-emitting device capable of keeping high luminance intensity even if electric power increases, and suitable for lighting instruments such as lights and lamps. The semiconductor device includes a metal electrode layer provided with openings, and is so large in size that the electrode layer has, for example, an area of 1 mm2 or more. The openings have a mean diameter of 10 nm to 2 μm, and penetrate through the metal electrode layer. The metal electrode layer can be produced by use of self-assembling of block copolymer or by nano-imprinting techniques.

摘要翻译： 即使电力增加也能够保持高亮度强度的半导体发光装置，适用于灯具等照明装置。 半导体器件包括设置有开口的金属电极层，其尺寸如此大，使得电极层具有例如1mm 2以上的面积。 开口的平均直径为10nm〜2μm，贯穿金属电极层。 金属电极层可以通过使用嵌段共聚物的自组装或通过纳米压印技术来制备。

公开(公告)号：US08921887B2

公开(公告)日：2014-12-30

申请号：US13221319

申请日：2011-08-30

申请人： Kumi Masunaga ,  Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Kumi Masunaga ,  Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/62 ,  H01L33/38

CPC分类号： H01L33/405 ,  H01L33/38 ,  H01L2933/0016 ,  H01L2933/0083

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分 沿着从第一半导体层到第二半导体层的方向。 多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒 金属部分。

公开(公告)号：US20120132948A1

公开(公告)日：2012-05-31

申请号：US13229972

申请日：2011-09-12

申请人： Shinji Nunotani ,  Masaaki Ogawa ,  Koji Asakawa ,  Ryota Kitagawa ,  Akira Fujimoto ,  Takanobu Kamakura

发明人： Shinji Nunotani ,  Masaaki Ogawa ,  Koji Asakawa ,  Ryota Kitagawa ,  Akira Fujimoto ,  Takanobu Kamakura

IPC分类号： H01L33/36

CPC分类号： H01L33/38 ,  H01L2933/0016

摘要： According to one embodiment, a semiconductor light emitting device includes a light emitter, a first and a second electrode layer, a pad electrode and an auxiliary electrode portion. The emitter includes a first semiconductor layer provided on one side of the emitter, a second semiconductor layer provided on one other side of the emitter, and a light emitting layer provided between the first and second semiconductor layers. The first electrode layer is provided on opposite side of the second semiconductor layer from the first semiconductor layer and includes a metal layer and a plurality of apertures penetrating through the metal layer. The second electrode layer is electrically continuous with the first semiconductor layer. The pad electrode is electrically continuous with the first electrode layer. The auxiliary electrode portion is electrically continuous with the first electrode layer and extends in a second direction orthogonal to the first direction.

摘要翻译： 根据一个实施例，半导体发光器件包括光发射器，第一和第二电极层，焊盘电极和辅助电极部分。 发射极包括设置在发射极一侧的第一半导体层，设置在发射极的另一侧的第二半导体层以及设置在第一和第二半导体层之间的发光层。 第一电极层设置在第二半导体层的与第一半导体层相反的一侧上，并且包括金属层和贯穿金属层的多个孔。 第二电极层与第一半导体层电连接。 焊盘电极与第一电极层电连接。 辅助电极部分与第一电极层电连续并沿与第一方向正交的第二方向延伸。

公开(公告)号：US20120056155A1

公开(公告)日：2012-03-08

申请号：US13037990

申请日：2011-03-01

申请人： Koji Asakawa ,  Akira Fujimoto ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

发明人： Koji Asakawa ,  Akira Fujimoto ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

IPC分类号： H01L33/06 ,  H01L33/38 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L33/38 ,  H01L33/405 ,  H01L2933/0016

摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first semiconductor layer and the second semiconductor layer. The first electrode layer includes a metal portion, a plurality of first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plurality of first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers.

摘要翻译： 半导体发光器件包括结构体，第一电极层和第二电极层。 结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一半导体层和第二半导体层之间的发光层。 第一电极层包括金属部分，多个第一开口部分和至少一个第二开口部分。 金属部分沿着从第一半导体层朝向第二半导体层的方向具有不小于10纳米且不大于200纳米的厚度。 多个第一开口部分的圆当量直径不小于10纳米且不超过1微米。 至少一个第二开口部分具有大于1微米且不超过30微米的圆当量直径。

公开(公告)号：US20110220936A1

公开(公告)日：2011-09-15

申请号：US12876318

申请日：2010-09-07

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Koji Asakawa

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Koji Asakawa

IPC分类号： H01L33/40 ,  H01L21/283

CPC分类号： H01L33/58 ,  H01L33/38 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

摘要： A semiconductor light-emitting device according to the embodiment includes a substrate, a compound semiconductor layer, a metal electrode layer provided with particular openings, a light-extraction layer, and a counter electrode. The light-extraction layer has a thickness of 20 to 120 nm and covers at least partly the metal part of the metal electrode layer; or otherwise the light-extraction layer has a rugged structure and covers at least partly the metal part of the metal electrode layer. The rugged structure has projections so arranged that their summits are positioned at intervals of 100 to 600 nm, and the heights of the summits from the surface of the metal electrode layer are 200 to 700 nm.

摘要翻译： 根据实施例的半导体发光器件包括衬底，化合物半导体层，设置有特定开口的金属电极层，光提取层和对电极。 光提取层的厚度为20〜120nm，至少部分覆盖金属电极层的金属部分。 否则光提取层具有坚固的结构并且至少部分地覆盖金属电极层的金属部分。 凹凸结构具有突出部，使得它们的顶点以100至600nm的间隔定位，并且来自金属电极层的表面的顶点的高度为200至700nm。

公开(公告)号：US07928353B2

公开(公告)日：2011-04-19

申请号：US12392691

申请日：2009-02-25

申请人： Akira Fujimoto ,  Koji Asakawa ,  Tsutomu Nakanishi ,  Eishi Tsutsumi ,  Ryota Kitagawa

发明人： Akira Fujimoto ,  Koji Asakawa ,  Tsutomu Nakanishi ,  Eishi Tsutsumi ,  Ryota Kitagawa

IPC分类号： H01J1/46

CPC分类号： H01L51/5203 ,  H01L51/5234 ,  H01L2251/5315

摘要： The Present invention provides an organic EL display and a lighting device having high efficiency. The organic EL display comprises a substrate, a pixel-driving circuit unit, and pixels arranged in the form of a matrix on the substrate. The pixel comprises a light-emitting part, and the light-emitting part is composed of a first electrode placed near to the substrate, a second electrode placed far from the substrate, and at least one organic layer placed between the first and second electrodes. The second electrode has a metal electrode layer having a thickness of 10 nm to 200 nm, and the metal electrode layer comprises a metal part and plural openings penetrating through the layer. The metal part is seamless and formed of metal continuously connected without breaks between any points therein. The openings have an average opening diameter of 10 nm to 780 nm, and are arranged so periodically that the distribution of the arrangement is represented by a radial distribution function curve having a half-width of 5 nm to 300 nm.

摘要翻译： 本发明提供一种高效率的有机EL显示器和照明装置。 有机EL显示器包括基板，像素驱动电路单元和在基板上以矩阵形式布置的像素。 像素包括发光部分，并且发光部分由放置在基板附近的第一电极，远离基板的第二电极和放置在第一和第二电极之间的至少一个有机层组成。 第二电极具有厚度为10nm至200nm的金属电极层，并且金属电极层包括金属部分和贯穿该层的多个开口。 金属部件是无缝的，并且由连续连接的金属形成，其中任何点之间没有断裂。 开口的平均开口直径为10nm〜780nm，并且周期性地布置，使得布置的分布由半宽度为5nm至300nm的径向分布函数曲线表示。

公开(公告)号：US08450768B2

公开(公告)日：2013-05-28

申请号：US13335984

申请日：2011-12-23

申请人： Ryota Kitagawa ,  Koji Asakawa ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi

发明人： Ryota Kitagawa ,  Koji Asakawa ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L2933/0091

摘要： The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.

摘要翻译： 本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的，使得零件中的任何一个点位置连续地连接而不断裂，并且整个区域的95％或更多的金属部分在直线上不间断地继续直线而不断裂，直线距离不大于 从活性层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。