公开(公告)号：US20110244656A1

公开(公告)日：2011-10-06

申请号：US13162611

申请日：2011-06-17

申请人： Koji DAIRIKI ,  Naoto KUSUMOTO ,  Takuya TSURUME

发明人： Koji DAIRIKI ,  Naoto KUSUMOTO ,  Takuya TSURUME

IPC分类号： H01L21/82 ,  H01L21/20

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L2221/68354

摘要： It is an object of the present invention to improve a factor which influences productivity such as variation caused by a characteristic defect of a circuit by thinning or production yield when an integrated circuit device in which a substrate is thinned is manufactured. A stopper layer is formed over one surface of a substrate, and an element is formed over the stopper layer, and then, the substrate is thinned from the other surface thereof. A method in which a substrate is ground or polished or a method in which the substrate is etched by chemical reaction is used as a method for thinning or removing the substrate.

摘要翻译： 本发明的目的在于，制造基板薄型化的集成电路装置时，通过减薄或提高成品率来提高影响生产率的因素，例如电路特性缺陷引起的变化。 在衬底的一个表面上形成阻挡层，并且在阻挡层上形成元件，然后从其另一个表面减薄衬底。 将基板研磨或抛光的方法或其中通过化学反应蚀刻基板的方法用作薄膜或去除基板的方法。

公开(公告)号：US20110033987A1

公开(公告)日：2011-02-10

申请号：US12908239

申请日：2010-10-20

申请人： Koji DAIRIKI ,  Naoto KUSUMOTO ,  Takuya TSURUME

发明人： Koji DAIRIKI ,  Naoto KUSUMOTO ,  Takuya TSURUME

IPC分类号： H01L21/56 ,  H01L21/20

CPC分类号： H01L27/1266 ,  H01L27/1285 ,  H01L27/1292

摘要： An object is to provide a method for manufacturing a semiconductor device which suppresses an influence on a semiconductor element due to entry of an impurity element, moisture, or the like from outside even in the case of thinning or removing a substrate after forming a semiconductor element over the substrate. A feature is to form an insulating film functioning as a protective film on at least one side of the substrate by performing surface treatment on the substrate, to form a semiconductor element such as a thin film transistor over the insulating film, and to thin the substrate. As the surface treatment, addition of an impurity element or plasma treatment is performed on the substrate. As a means for thinning the substrate, the substrate can be partially removed by performing grinding treatment, polishing treatment, or the like on the other side of the substrate.

摘要翻译： 本发明的目的是提供一种用于制造半导体器件的方法，其中，即使在形成半导体元件之后减薄或去除衬底的情况下，也可以抑制由于杂质元素，水分等的进入而对半导体元件的影响 在基板上。 特征在于，在基板的至少一面上形成作为保护膜的绝缘膜，在基板上进行表面处理，在绝缘膜上形成薄膜晶体管等半导体元件，并使基板 。 作为表面处理，在基板上进行杂质元素或等离子体处理的添加。 作为使基板变薄的方法，可以在基板的另一侧进行研磨处理，研磨处理等来部分除去基板。

公开(公告)号：US20110171776A1

公开(公告)日：2011-07-14

申请号：US13053241

申请日：2011-03-22

申请人： Naoto KUSUMOTO ,  Takuya TSURUME

发明人： Naoto KUSUMOTO ,  Takuya TSURUME

IPC分类号： H01L21/48 ,  H01P11/00

CPC分类号： H01Q1/2208 ,  G06K19/07749 ,  H01L23/49855 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/24226 ,  H01L2224/76155 ,  H01L2224/82102 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01057 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01Q7/00 ,  Y10T29/49016 ,  Y10T29/49018 ,  H01L2924/00

摘要： An antenna used for an ID chip or the like is disclosed with planarized antenna unevenness and an IC chip having such the antenna with a flat surface is disclosed. Manufacturing an integrated circuit mounted with an antenna is facilitated. A laminated body formed by stacking a conductive film 11, a resin film 13, an integrated circuit 12, and a resin film 14 are rolled so that the resin film 14 is outside. Then, the laminated body is integrated in a roll form by softening the resin films 13, 14 by applying heat. By slicing the rolled laminated body along with the direction in which the rolled conductive film 31 appears in the cross section, an IC chip with antenna formed by the rolled conductive film 11 is formed.

摘要翻译： 公开了用于ID芯片等的天线，其具有平坦化的天线不均匀性，并且公开了具有平坦表面的天线的IC芯片。 制造安装有天线的集成电路变得容易。 通过层叠导电膜11，树脂膜13，集成电路12和树脂膜14而形成的层叠体被卷成树脂膜14的外侧。 然后，通过施加热量使树脂膜13,14软化，将层叠体整合成卷状。 通过将轧制的层压体与轧制导电膜31在横截面中出现的方向切片，形成由卷绕的导电膜11形成的具有天线的IC芯片。

公开(公告)号：US20110171778A1

公开(公告)日：2011-07-14

申请号：US13071629

申请日：2011-03-25

申请人： Tomoko TAMURA ,  Eiji SUGIYAMA ,  Yoshitaka DOZEN ,  Koji DAIRIKI ,  Takuya TSURUME

发明人： Tomoko TAMURA ,  Eiji SUGIYAMA ,  Yoshitaka DOZEN ,  Koji DAIRIKI ,  Takuya TSURUME

IPC分类号： H01L21/50 ,  H01L21/56

CPC分类号： H01L21/02381 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/13 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/81001

摘要： A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.

摘要翻译： 形成在衬底上的释放层; 在剥离层上形成薄膜集成电路中的至少一个; 在薄膜集成电路中的至少一个上形成膜; 并通过使用蚀刻剂除去释放层; 因此，薄膜集成电路中的至少一个从基板剥离。 半导体器件通过层压等密封剥离的薄膜集成电路而形成。

公开(公告)号：US20110207292A1

公开(公告)日：2011-08-25

申请号：US13100316

申请日：2011-05-04

申请人： Yoshitaka DOZEN ,  Tomoko TAMURA ,  Takuya TSURUME ,  Koji DAIRIKI

发明人： Yoshitaka DOZEN ,  Tomoko TAMURA ,  Takuya TSURUME ,  Koji DAIRIKI

IPC分类号： H01L21/762

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/13 ,  H01L27/28 ,  H01L29/78603 ,  H01L2924/3511

摘要： Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. A feature of the invention is to use a metal film and a reactant having the metal film as a separation layer. An etching rate of the metal film or the reactant having metal is high, and a physical means in addition to a chemical means of etching the metal film or the reactant having metal can be used in the invention. Thus, the IDF chip can be manufactured more simply and easily in a short time.

摘要翻译： 预期由硅晶片形成的IC芯片的应用形式和需求将增加，并且需要进一步降低成本。 本发明的目的是提供一种IC芯片的结构和能够以较低成本生产的方法。 本发明的一个特征是使用具有金属膜的金属膜和反应物作为分离层。 金属膜或具有金属的反应物的蚀刻速率高，并且除了蚀刻金属膜的化学方法或具有金属的反应物之外的物理手段可以用于本发明。 因此，可以在短时间内更容易地制造IDF芯片。

公开(公告)号：US20090050964A1

公开(公告)日：2009-02-26

申请号：US12255117

申请日：2008-10-21

申请人： Yoshitaka DOZEN ,  Tomoko TAMURA ,  Takuya TSURUME ,  Koji DAIRIKI

发明人： Yoshitaka DOZEN ,  Tomoko TAMURA ,  Takuya TSURUME ,  Koji DAIRIKI

IPC分类号： H01L29/786 ,  H01L21/304

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/13 ,  H01L27/28 ,  H01L29/78603 ,  H01L2924/3511

摘要： Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. A feature of the invention is to use a metal film and a reactant having the metal film as a separation layer. An etching rate of the metal film or the reactant having metal is high, and a physical means in addition to a chemical means of etching the metal film or the reactant having metal can be used in the invention. Thus, the IDF chip can be manufactured more simply and easily in a short time.

摘要翻译： 预期由硅晶片形成的IC芯片的应用形式和需求将增加，并且需要进一步降低成本。 本发明的目的是提供一种IC芯片的结构和能够以较低成本生产的方法。 本发明的一个特征是使用具有金属膜的金属膜和反应物作为分离层。 金属膜或具有金属的反应物的蚀刻速率高，并且除了蚀刻金属膜的化学方法或具有金属的反应物之外的物理手段可以用于本发明。 因此，可以在短时间内更容易地制造IDF芯片。

公开(公告)号：US20090159998A1

公开(公告)日：2009-06-25

申请号：US12371937

申请日：2009-02-17

申请人： Takuya TSURUME ,  Naoto KUSUMOTO

发明人： Takuya TSURUME ,  Naoto KUSUMOTO

IPC分类号： H01L27/14

CPC分类号： G06K19/07749

摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device, which is flexible and superiority in physical strength. As a method for manufacturing a semiconductor device, an element layer including a plurality of integrated circuits is formed over one surface of a substrate; a hole having curvature is formed in part of one surface side of the substrate; the substrate is thinned (for example, the other surface of the substrate is ground and polished); and the substrate is cut off so that a cross section of the substrate has curvature corresponding to a portion where the hole is formed; whereby a laminated body including an integrated circuit is formed. Further, a thickness of the substrate, which is polished, is 2 μm or more and 50 μm or less.

摘要翻译： 本发明的一个目的是提供一种柔性和优异的物理强度的半导体器件的制造方法。 作为制造半导体器件的方法，在衬底的一个表面上形成包括多个集成电路的元件层; 在基板的一个表面侧的一部分上形成具有曲率的孔; 衬底变薄（例如，衬底的另一表面被研磨和抛光）; 并且基板被切断，使得基板的横截面具有与形成孔的部分相对应的曲率; 从而形成包括集成电路的层叠体。 此外，抛光的基板的厚度为2μm以上且50μm以下。

公开(公告)号：US20120241924A1

公开(公告)日：2012-09-27

申请号：US13468354

申请日：2012-05-10

申请人： Kyosuke ITO ,  Junya MARUYAMA ,  Takuya TSURUME ,  Shunpei YAMAZAKI

发明人： Kyosuke ITO ,  Junya MARUYAMA ,  Takuya TSURUME ,  Shunpei YAMAZAKI

IPC分类号： H01L23/66

CPC分类号： H01L27/1266 ,  G06K19/07749 ,  H01L27/1214 ,  H01L27/13 ,  H01L2224/95001 ,  H01Q1/2225 ,  H01Q7/00 ,  Y10T29/49018

摘要： The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein.

摘要翻译： 本发明提供了一种天线，其特征在于，形成在基膜上的导电体的粘合强度增加，并且包括该天线的半导体器件。 本发明还提供一种通过附着元件形成层和天线形成的具有高可靠性的半导体器件，其中元件形成层由于天线的结构而不被损坏。 半导体器件包括设置在衬底上的元件形成层和设置在元件形成层上的天线。 元件形成层和天线电连接。 天线具有基膜和导电体，其中导电体的至少一部分嵌入基膜中。 作为将导电体嵌入基膜中的方法，在基膜中形成凹部，在其中形成导电体。

公开(公告)号：US20100197113A1

公开(公告)日：2010-08-05

申请号：US12755467

申请日：2010-04-07

申请人： Takuya TSURUME

发明人： Takuya TSURUME

IPC分类号： H01L21/304

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L2224/83851

摘要： To provide a thin semiconductor device having flexibility. A groove is formed in one surface of a substrate; an element layer including an element is formed, the element being disposed within the groove; the substrate is thinned from the other surface of the substrate until one surface of the element layer is exposed, to form a layer which is to be transposed, having the element; and the layer to be transposed is transposed onto the film.

摘要翻译： 提供具有灵活性的薄的半导体器件。 在衬底的一个表面中形成凹槽; 形成包括元件的元件层，元件设置在凹槽内; 衬底从衬底的另一表面变薄，直到元件层的一个表面露出，形成具有该元件的被转置的层; 并且要转置的层被转置到膜上。

公开(公告)号：US20110233556A1

公开(公告)日：2011-09-29

申请号：US13157338

申请日：2011-06-10

申请人： Eiji SUGIYAMA ,  Yoshitaka DOZEN ,  Hisashi OHTANI ,  Takuya TSURUME

发明人： Eiji SUGIYAMA ,  Yoshitaka DOZEN ,  Hisashi OHTANI ,  Takuya TSURUME

IPC分类号： H01L29/786

CPC分类号： H01L27/1266 ,  H01L23/145 ,  H01L23/49855 ,  H01L27/105 ,  H01L27/115 ,  H01L27/1248 ,  H01L27/13 ,  H01L29/78603 ,  H01L2223/6677 ,  H01L2224/16225 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01Q1/2225 ,  H01Q1/2283 ,  H01L2924/00

摘要： The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a method for manufacturing a highly-reliable semiconductor device, which is not destructed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element layer having a semiconductor element formed using a non-single crystal semiconductor layer, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element layer and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are firmly fixed together.

摘要翻译： 本发明提供一种不容易被外部局部压力损坏的半导体器件。 本发明还提供一种以高产率制造不被外部局部压力破坏的高可靠性半导体器件的方法。 在具有使用非单晶半导体层形成的半导体元件的元件层上设置有机化合物或无机化合物的高强度纤维被有机树脂浸渍的结构体，加热和压接 由此制造半导体器件，将有机化合物或无机化合物的高强度纤维与有机树脂浸渍的元件层和结构体牢固地固定在一起。