摘要:
A circuit according to embodiments includes: a plurality of bit-string comparators each of which includes a plurality of single-bit comparators each of which includes first and second input terminals, first and second match-determination terminals, and a memory storing data and inverted data in a pair, the first input terminal being connected to a respective search line, the second input terminal being connected to an inverted search line being paired with the respective search line, and a matching line connecting the first and second match-determination terminals of the single-bit comparators; a pre-charge transistor of which source is connected to a supply voltage line; a common matching line connected to a drain of the pre-charge transistor and the matching lines of the bit-string comparators; and an output inverter of which input is connected to the common matching line.
摘要:
One embodiment provides a semiconductor integrated circuit, including: a substrate; a plurality of nonvolatile memory portions formed in the substrate, each including a first nonvolatile memory and a second nonvolatile memory; and a plurality of logic transistor portions formed in the substrate, each including at least one of logic transistor, wherein the logic transistors include: a first transistor which is directly connected to drains of the first and second nonvolatile memories at its gate; and a second transistor which is not directly connected to the drains of the first and second nonvolatile memories, and wherein a bottom surface of the gate of each of the logic transistors sandwiching the first and second nonvolatile memories is lower in height from a top surface of the substrate than a bottom surface of the control gate of each of the first and second nonvolatile memories.
摘要:
According to one embodiment, a configuration memory includes first and second data lines, a first memory string which comprises at least first and second nonvolatile memory transistors which are connected in series between a common node and the first data line, a second memory string which comprises at least third and fourth nonvolatile memory transistors which are connected in series between the common node and the second data line, and a flip-flop circuit which comprises a first data holding node connected to the common node and a second data holding node connected to a configuration data output node.
摘要:
One embodiment provides a programmable logic switch in which a first nonvolatile memory and a second nonvolatile memory are formed in the same well, and in which to change the first nonvolatile memory from an erased state to a written state and leave the second nonvolatile memory being in the erased state, a first write voltage is applied to a first line connected with gate electrodes of the first and second nonvolatile memories, a second write voltage is applied to a second line connected to a source in the first nonvolatile memory, and a third write voltage lower than the second write voltage is applied to a fourth line connected to a source of the second nonvolatile memory.
摘要:
According to one embodiment, a semiconductor integrated circuit includes nonvolatile memory areas, each includes a first nonvolatile memory transistor, a second nonvolatile memory transistor and an output line, the first nonvolatile memory transistor includes a first source diffusion region, a first drain diffusion region and a first control gate electrode, the second nonvolatile memory transistor includes a second source diffusion region, a second drain diffusion region and a second control gate electrode, the output line connected the first drain diffusion region and the second drain diffusion region, and logic transistor areas, each includes a logic transistor, the logic transistor includes a third source diffusion region, a third drain diffusion region and a first gate electrode.
摘要:
One embodiment provides a programmable logic device in which a logic switch includes: a first memory having a first terminal connected to a first wire, a second terminal connected to a second wire, and a third terminal connected to a third wire; a second memory having a fourth terminal connected to the first wire, a fifth terminal connected to a fourth wire, and a sixth terminal connected to a fifth wire; and a pass transistor having a gate connected to the first terminal, and a source and a drain respectively connected to a sixth wire and a seventh wire. A source or drain of a first select gate transistor is connected the sixth wire, and a source or drain of a second select gate transistor is connected to the seventh wire.
摘要:
A nonvolatile programmable logic switch according to an embodiment includes first and second cells, each of the first and second cells including: a first memory having a first to third terminals, the third terminal being receiving a control signal; a first transistor connected at one of source/drain to the second terminal; and a second transistor connected at a gate to the other of the source/drain of the first transistor, the third terminal of the first memory in the first cell and the third terminal of the first memory in the second cell being connected in common. When conducting writing into the first memory in the first cell, the third terminal is connected to a write power supply generating a write voltage, the first terminals in the first and second cells are connected to a ground power supply and a write inhibit power supply generating a write inhibit voltage respectively.
摘要:
According to one embodiment, a semiconductor integrated circuit includes nonvolatile memory areas, each includes a first nonvolatile memory transistor, a second nonvolatile memory transistor and an output line, the first nonvolatile memory transistor includes a first source diffusion region, a first drain diffusion region and a first control gate electrode, the second nonvolatile memory transistor includes a second source diffusion region, a second drain diffusion region and a second control gate electrode, the output line connected the first drain diffusion region and the second drain diffusion region, and logic transistor areas, each includes a logic transistor, the logic transistor includes a third source diffusion region, a third drain diffusion region and a first gate electrode.
摘要:
A nonvolatile programmable logic switch according to an embodiment includes first and second cells, each of the first and second cells including: a first memory having a first to third terminals, the third terminal being receiving a control signal; a first transistor connected at one of source/drain to the second terminal; and a second transistor connected at a gate to the other of the source/drain of the first transistor, the third terminal of the first memory in the first cell and the third terminal of the first memory in the second cell being connected in common. When conducting writing into the first memory in the first cell, the third terminal is connected to a write power supply generating a write voltage, the first terminals in the first and second cells are connected to a ground power supply and a write inhibit power supply generating a write inhibit voltage respectively.
摘要:
A nonvolatile programmable switch according to an embodiment includes: a first nonvolatile memory transistor including a first to third terminals connected to a first to third interconnects respectively; a second nonvolatile memory transistor including a fourth terminal connected to a fourth interconnect, a fifth terminal connected to the second interconnect, and a sixth terminal connected to the third interconnect, the first and second nonvolatile memory transistors having the same conductivity type; and a pass transistor having a gate electrode connected to the second interconnect. When the first and fourth interconnects are connected to a first power supply while the third interconnect is connected to a second power supply having a higher voltage than that of the first power supply, a threshold voltage of the first nonvolatile memory transistor increases, and a threshold voltage of the second nonvolatile memory transistor decreases.