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    SEMICONDUCTOR INTEGRATED CIRCUIT
    1.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT 审中-公开
    半导体集成电路

    公开(公告)号：US20130307054A1

    公开(公告)日：2013-11-21

    申请号：US13606292

    申请日：2012-09-07

    申请人： Shinichi YASUDA ,  Kosuke Tatsumura ,  Mari Matsumoto ,  Koichiro Zaitsu ,  Masato Oda ,  Atsuhiro Kinoshita ,  Daisuke Hagishima ,  Yoshifumi Nishi ,  Takahiro Kurita ,  Shinobu Fujita

    发明人： Shinichi YASUDA ,  Kosuke Tatsumura ,  Mari Matsumoto ,  Koichiro Zaitsu ,  Masato Oda ,  Atsuhiro Kinoshita ,  Daisuke Hagishima ,  Yoshifumi Nishi ,  Takahiro Kurita ,  Shinobu Fujita

    IPC分类号： H01L27/105

    CPC分类号： G11C16/10 ,  H01L21/823456 ,  H01L21/823462 ,  H01L27/11526 ,  H01L27/11573 ,  H01L29/7881 ,  H01L29/792

    摘要： One embodiment provides a semiconductor integrated circuit, including: a substrate; a plurality of nonvolatile memory portions formed in the substrate, each including a first nonvolatile memory and a second nonvolatile memory; and a plurality of logic transistor portions formed in the substrate, each including at least one of logic transistor, wherein the logic transistors include: a first transistor which is directly connected to drains of the first and second nonvolatile memories at its gate; and a second transistor which is not directly connected to the drains of the first and second nonvolatile memories, and wherein a bottom surface of the gate of each of the logic transistors sandwiching the first and second nonvolatile memories is lower in height from a top surface of the substrate than a bottom surface of the control gate of each of the first and second nonvolatile memories.

    摘要翻译： 一个实施例提供一种半导体集成电路，包括：基板; 形成在所述基板中的多个非易失性存储部，每个包括第一非易失性存储器和第二非易失性存储器; 以及形成在所述衬底中的多个逻辑晶体管部分，每个逻辑晶体管部分包括逻辑晶体管中的至少一个，其中所述逻辑晶体管包括：第一晶体管，其第一和第二非易失性存储器的栅极直接连接到第一晶体管; 以及第二晶体管，其不直接连接到第一和第二非易失性存储器的漏极，并且其中夹着第一和第二非易失性存储器的每个逻辑晶体管的栅极的底表面的高度与 所述基板比所述第一和第二非易失性存储器中的每一个的所述控制栅极的底表面。

    Circuit having programmable match determination function, and LUT circuit, MUX circuit and FPGA device with such function and method of data writing
    2.
    发明授权
    Circuit having programmable match determination function, and LUT circuit, MUX circuit and FPGA device with such function and method of data writing 有权
    具有可编程匹配确定功能的电路，以及具有数据写入功能和方法的LUT电路，MUX电路和FPGA器件

    公开(公告)号：US08908408B2

    公开(公告)日：2014-12-09

    申请号：US13613701

    申请日：2012-09-13

    申请人： Kosuke Tatsumura ,  Masato Oda ,  Atsuhiro Kinoshita ,  Koichiro Zaitsu ,  Mari Matsumoto ,  Shinichi Yasuda

    发明人： Kosuke Tatsumura ,  Masato Oda ,  Atsuhiro Kinoshita ,  Koichiro Zaitsu ,  Mari Matsumoto ,  Shinichi Yasuda

    IPC分类号： G11C15/00

    CPC分类号： H03K19/17728 ,  G11C15/04 ,  G11C15/046 ,  H03K19/17712

    摘要： A circuit according to embodiments includes: a plurality of bit-string comparators each of which includes a plurality of single-bit comparators each of which includes first and second input terminals, first and second match-determination terminals, and a memory storing data and inverted data in a pair, the first input terminal being connected to a respective search line, the second input terminal being connected to an inverted search line being paired with the respective search line, and a matching line connecting the first and second match-determination terminals of the single-bit comparators; a pre-charge transistor of which source is connected to a supply voltage line; a common matching line connected to a drain of the pre-charge transistor and the matching lines of the bit-string comparators; and an output inverter of which input is connected to the common matching line.

    摘要翻译： 根据实施例的电路包括：多个比特串比较器，每个比特串包括多个单比特比较器，每个单比特比较器包括第一和第二输入端，第一和第二匹配确定终端，以及存储数据并反转的存储器 成对的数据，第一输入端子连接到相应的搜索线，第二输入端子连接到与相应搜索线配对的反向搜索线，以及匹配线，连接第一和第二匹配确定端子 单比特比较器; 其源极连接到电源电压线的预充电晶体管; 连接到预充电晶体管的漏极和位串比较器的匹配线的公共匹配线; 以及输入反相器，其输入连接到公共匹配线。

    Nonvolatile programmable logic switch
    3.
    发明授权
    Nonvolatile programmable logic switch 有权
    非易失性可编程逻辑开关

    公开(公告)号：US08553464B2

    公开(公告)日：2013-10-08

    申请号：US13240087

    申请日：2011-09-22

    申请人： Yoshifumi Nishi ,  Daisuke Hagishima ,  Shinichi Yasuda ,  Tetsufumi Tanamoto ,  Takahiro Kurita ,  Atsuhiro Kinoshita ,  Shinobu Fujita

    发明人： Yoshifumi Nishi ,  Daisuke Hagishima ,  Shinichi Yasuda ,  Tetsufumi Tanamoto ,  Takahiro Kurita ,  Atsuhiro Kinoshita ,  Shinobu Fujita

    IPC分类号： G11C11/35

    CPC分类号： H01L27/11568 ,  G11C16/0458 ,  G11C16/10 ,  H01L27/11573 ,  H01L27/11803

    摘要： An aspect of the present embodiment, there is provided a nonvolatile programmable logic switch including a first memory cell transistor, a second memory cell transistor, a pass transistor and a first substrate electrode applying a substrate voltage to the pass transistor, wherein a writing voltage is applied to the first wiring, a first voltage is applied to one of a second wiring and a third wiring and a second voltage which is lower than the first voltage is applied to the other of the second wiring and the third wiring, and the first substrate voltage which is higher than the second voltage and lower than the first voltage is applied to a well of the pass transistor, when data is written into the first memory cell transistor or the second memory cell transistor.

    摘要翻译： 本实施例的一个方面提供了一种非易失性可编程逻辑开关，包括第一存储单元晶体管，第二存储单元晶体管，传输晶体管和向该通过晶体管施加衬底电压的第一衬底电极，其中写入电压为 施加到第一布线，第一电压施加到第二布线和第三布线中的一个，并且低于第一电压的第二电压施加到第二布线和第三布线中的另一布线，第一基板 当数据被写入第一存储单元晶体管或第二存储单元晶体管时，高于第二电压并低于第一电压的电压被施加到传输晶体管的阱。

    Semiconductor device
    4.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09007823B2

    公开(公告)日：2015-04-14

    申请号：US13480853

    申请日：2012-05-25

    申请人： Takahiro Kurita ,  Yoshifumi Nishi ,  Kosuke Tatsumura ,  Atsuhiro Kinoshita

    发明人： Takahiro Kurita ,  Yoshifumi Nishi ,  Kosuke Tatsumura ,  Atsuhiro Kinoshita

    IPC分类号： G11C11/34 ,  H01L21/28 ,  G11C7/02 ,  G11C11/403 ,  H01L29/423 ,  H01L29/51 ,  H01L27/108

    CPC分类号： H01L21/28291 ,  G11C7/02 ,  G11C11/403 ,  H01L21/28282 ,  H01L27/108 ,  H01L27/10873 ,  H01L29/4234 ,  H01L29/516

    摘要： A semiconductor device according to an embodiment includes: a first transistor including a gate connected to a first interconnection, a first source, and a first drain, one of the first source and the first drain being connected to a second interconnection; and a second transistor including a gate structure, a second source, and a second drain, one of the second source and second drain being connected to a third interconnection and the other of the second source and second drain being connected to a fourth interconnection. The gate structure includes a gate insulation film, a gate electrode, and a threshold-modulating film provided between the gate insulation film and the gate electrode to modulate a threshold voltage, the other of the first source and first drain of the first transistor is connected to the gate electrode.

    摘要翻译： 根据实施例的半导体器件包括：第一晶体管，包括连接到第一互连的栅极，第一源极和第一漏极，第一源极和第一漏极中的一个连接到第二互连; 以及第二晶体管，其包括栅极结构，第二源极和第二漏极，所述第二源极和第二漏极中的一个连接到第三互连，并且所述第二源极和第二漏极中的另一个连接到第四互连。 栅极结构包括栅极绝缘膜，栅极电极和设置在栅极绝缘膜和栅电极之间以调节阈值电压的阈值调制膜，第一晶体管的第一源极和第一漏极中的另一个被连接 到栅电极。

    Memory including transistors with double floating gate structures
    7.
    发明授权
    Memory including transistors with double floating gate structures 失效
    存储器包括具有双浮栅结构的晶体管

    公开(公告)号：US08610196B2

    公开(公告)日：2013-12-17

    申请号：US13608436

    申请日：2012-09-10

    申请人： Tetsufumi Tanamoto ,  Kosuke Tatsumura ,  Kiwamu Sakuma ,  Atsuhiro Kinoshita ,  Shinobu Fujita ,  Koichi Muraoka

    发明人： Tetsufumi Tanamoto ,  Kosuke Tatsumura ,  Kiwamu Sakuma ,  Atsuhiro Kinoshita ,  Shinobu Fujita ,  Koichi Muraoka

    IPC分类号： H01L27/11

    CPC分类号： H01L29/42332 ,  G11C11/412 ,  G11C14/0063 ,  H01L27/1104 ,  H01L29/7881

    摘要： In a memory of an embodiment, first and second P-channel transistors are formed on a first semiconductor region, and each of the first and second P-channel transistors has a structure formed by stacking a first insulating film, a first floating gate, a second insulating film, a second floating gate, a third insulating film, and a first control gate in this order on the first semiconductor region. In the memory, first and second N-channel transistors are formed on a second semiconductor region, and each of the first and second N-channel transistors has a structure formed by stacking a fourth insulating film, a third floating gate, a fifth insulating film, a fourth floating gate, a sixth insulating film, and a second control gate in this order on the second semiconductor region.

    摘要翻译： 在实施例的存储器中，第一和第二P沟道晶体管形成在第一半导体区域上，并且第一和第二P沟道晶体管中的每一个具有通过堆叠第一绝缘膜，第一浮动栅极， 第二绝缘膜，第二浮栅，第三绝缘膜和第一控制栅极。 在存储器中，第一和第二N沟道晶体管形成在第二半导体区域上，并且第一和第二N沟道晶体管中的每一个具有通过堆叠第四绝缘膜，第三浮栅，第五绝缘膜 ，第四浮栅，第六绝缘膜和第二控制栅极。

    MEMORY INCLUDING TRANSISTORS WITH DOUBLE FLOATING GATE STRUCTURES
    8.
    发明申请
    MEMORY INCLUDING TRANSISTORS WITH DOUBLE FLOATING GATE STRUCTURES 失效
    包含两个浮动门结构的晶体管的存储器

    公开(公告)号：US20130069134A1

    公开(公告)日：2013-03-21

    申请号：US13608436

    申请日：2012-09-10

    申请人： Tetsufumi TANAMOTO ,  Kosuke Tatsumura ,  Kiwamu Sakuma ,  Atsuhiro Kinoshita ,  Shinobu Fujita ,  Koichi Muraoka

    发明人： Tetsufumi TANAMOTO ,  Kosuke Tatsumura ,  Kiwamu Sakuma ,  Atsuhiro Kinoshita ,  Shinobu Fujita ,  Koichi Muraoka

    IPC分类号： H01L27/11

    CPC分类号： H01L29/42332 ,  G11C11/412 ,  G11C14/0063 ,  H01L27/1104 ,  H01L29/7881

    摘要： In a memory of an embodiment, first and second P-channel transistors are formed on a first semiconductor region, and each of the first and second P-channel transistors has a structure formed by stacking a first insulating film, a first floating gate, a second insulating film, a second floating gate, a third insulating film, and a first control gate in this order on the first semiconductor region. In the memory, first and second N-channel transistors are formed on a second semiconductor region, and each of the first and second N-channel transistors has a structure formed by stacking a fourth insulating film, a third floating gate, a fifth insulating film, a fourth floating gate, a sixth insulating film, and a second control gate in this order on the second semiconductor region.

    摘要翻译： 在实施例的存储器中，第一和第二P沟道晶体管形成在第一半导体区域上，并且第一和第二P沟道晶体管中的每一个具有通过堆叠第一绝缘膜，第一浮动栅极， 第二绝缘膜，第二浮栅，第三绝缘膜和第一控制栅极。 在存储器中，第一和第二N沟道晶体管形成在第二半导体区域上，并且第一和第二N沟道晶体管中的每一个具有通过堆叠第四绝缘膜，第三浮栅，第五绝缘膜 ，第四浮栅，第六绝缘膜和第二控制栅极。

    Nonvolatile programmable logic switch
    9.
    发明授权
    Nonvolatile programmable logic switch 失效
    非易失性可编程逻辑开关

    公开(公告)号：US08525251B2

    公开(公告)日：2013-09-03

    申请号：US13221292

    申请日：2011-08-30

    申请人： Daisuke Hagishima ,  Atsuhiro Kinoshita ,  Kazuya Matsuzawa ,  Kazutaka Ikegami ,  Yoshifumi Nishi

    发明人： Daisuke Hagishima ,  Atsuhiro Kinoshita ,  Kazuya Matsuzawa ,  Kazutaka Ikegami ,  Yoshifumi Nishi

    IPC分类号： H01L29/792

    CPC分类号： H01L29/7881 ,  G11C16/0408 ,  H01L27/1052 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11807 ,  H01L29/66825

    摘要： A nonvolatile programmable logic switch according to an embodiment includes: a memory cell transistor including: a first source region and a first drain region of a second conductivity type formed at a distance from each other in a first semiconductor region of a first conductivity type; a first insulating film, a charge storage film, a second insulating film, and a control gate stacked in this order and formed on the first semiconductor region between the first source region and the first drain region; a pass transistor including: a second source region and a second drain region of a second conductivity type formed at a distance from each other in a second semiconductor region of the first conductivity type; a third insulating film, a gate electrode stacked in this order and formed on the second semiconductor region between the second source region and the second drain region, the gate electrode being electrically connected to the first drain region; and an electrode for applying a substrate bias to the first and second semiconductor regions.

    摘要翻译： 根据实施例的非易失性可编程逻辑开关包括：存储单元晶体管，包括：在第一导电类型的第一半导体区域中彼此间隔开形成的第二导电类型的第一源极区域和第一漏极区域; 第一绝缘膜，电荷存储膜，第二绝缘膜和控制栅极，并且形成在第一源极区域和第一漏极区域之间的第一半导体区域上; 传输晶体管，包括：在第一导电类型的第二半导体区域中彼此成一定距离地形成的第二导电类型的第二源极区域和第二漏极区域; 第三绝缘膜，栅极电极，并且形成在第二源极区域和第二漏极区域之间的第二半导体区域上，栅极电连接到第一漏极区域; 以及用于将衬底偏压施加到第一和第二半导体区域的电极。

    MEMORY SYSTEM INCLUDING KEY-VALUE STORE
    10.
    发明申请
    MEMORY SYSTEM INCLUDING KEY-VALUE STORE 有权

    公开(公告)号：US20130042060A1

    公开(公告)日：2013-02-14

    申请号：US13569605

    申请日：2012-08-08

    申请人： Takao MARUKAME ,  Atsuhiro Kinoshita ,  Kosuke Tatsumura

    发明人： Takao MARUKAME ,  Atsuhiro Kinoshita ,  Kosuke Tatsumura

    IPC分类号： G06F12/00

    CPC分类号： G06F17/30982 ,  G06F12/0246 ,  G06F17/30097 ,  G06F17/3012 ,  G06F2212/7201

    摘要： According to one embodiment, a memory system including a key-value store containing key-value data as a pair of a key and a value corresponding to the key, includes an interface, a memory block, an address acquisition circuit and a controller. The interface receives a data write/read request or a request based on the key-value store. The memory block has a data area for storing data and a metadata table containing the key-value data. The address acquisition circuit acquires an address in response to input of the key. The controller executes the data write/read request for the memory block, and outputs the address acquired to the memory block and executes the request based on the key-value store. The controller outputs the value corresponding to the key via the interface.