摘要:
An extreme ultraviolet light generation apparatus may include: a laser apparatus; a chamber provided with an inlet for introducing a laser beam outputted from the laser apparatus to the inside thereof; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber; a collector mirror disposed in the chamber for collecting extreme ultraviolet light generated when the target material is irradiated with the laser beam in the chamber; an extreme ultraviolet light detection unit for detecting energy of the extreme ultraviolet light; and an energy control unit for controlling energy of the extreme ultraviolet light.
摘要:
An extreme ultraviolet light generation apparatus may include: a laser apparatus; a chamber provided with an inlet for introducing a laser beam outputted from the laser apparatus to the inside thereof; a target supply unit provided to the chamber for supplying a target material to a predetermined region inside the chamber; a collector mirror disposed in the chamber for collecting extreme ultraviolet light generated when the target material is irradiated with the laser beam in the chamber; an extreme ultraviolet light detection unit for detecting energy of the extreme ultraviolet light; and an energy control unit for controlling energy of the extreme ultraviolet light.
摘要:
At least either of the light entering plane or the light exiting plane is parallel to the (111) crystal face of the CaF2 crystal and the laser beam entering from the entering plane passes through the plane located between the [111] axis and the first azimuth axis in the locus of rotation of the [001] axis around the [111] axis and including the [111] axis and the first azimuth axis, the plane located between the [111] axis and the second azimuth axis in the locus of rotation of the [010] axis around the [111] axis and including the [111] axis and the second azimuth axis or the plane located between the [111] axis and the third azimuth axis in the locus of rotation of the [100] axis around the [111] axis and including the [111] axis and the third azimuth axis and exits from the exiting plane.
摘要:
The higher efficiency and lower power consumption are realized in a laser system for generating a high-power short-pulse laser beam. The laser system includes a laser oscillator for generating a pulse laser beam by laser oscillation, plural amplifiers for sequentially inputting the pulse laser beam generated by the laser oscillator and amplifying the pulse laser beam, and a control unit for controlling the laser oscillator to perform burst oscillation and halting an amplification operation of at least one of the plural amplifiers in a burst halt period between burst oscillation periods.
摘要:
A charging voltage Vosc applied to a main capacitor C0 disposed in an oscillating high-voltage pulse generator 12 of an oscillating laser 100 is subject to constant control such that a pulse energy Posc of the oscillating laser 100 becomes a lower limit energy Es0 or more of an amplification saturation region. And, a charging voltage Vamp applied to a main capacitor C0 disposed in an amplifying high-voltage pulse generator 32 of an amplifying laser 300 is controlled, and pulse energy Pamp of the amplifying laser 300 is determined as target energy Patgt. Thus, the pulse energy of a two-stage laser is controlled to stabilize the pulse energy.
摘要:
A system includes a chamber, a laser beam apparatus configured to generate a laser beam to be introduced into the chamber, a laser controller for the laser beam apparatus to control at least a beam intensity and an output timing of the laser beam, and a target supply unit configured to supply a target material into the chamber, the target material being irradiated with the laser beam for generating extreme ultraviolet light.
摘要:
A method of controlling a laser apparatus may include: exchanging a gain medium in a chamber configured to output a laser beam by exciting the gain medium; first measuring, after the exchanging, pulse energy of a laser beam which is oscillated in the chamber under a specific gas pressure and a specific charge voltage; calculating an approximate expression indicating a relationship between the pulse energy of the laser beam and the gas pressure in the chamber and the charge voltage, or a table representing a correlationship between the pulse energy, the gas pressure and the charge voltage, based on the specific pressure, the specific charge voltage and the pulse energy in the first measuring; storing the approximate expression or the table; second measuring, after the first measuring, pulse energy Er of a laser beam oscillated in the chamber; calculating pulse energy Eec which is supposed to be obtained directly after the exchanging under the gas pressure and the charge voltage in the second measuring based on the approximate expression or the table; calculating a reduction amount ΔEd of pulse energy based on the pulse energy Eec and the pulse energy Er using ΔEd=Eec−Er; and calculating a partial gas exchange amount Q for partial gas exchange in the chamber based on the reduction amount ΔEd of pulse energy.
摘要:
An extreme ultraviolet light source apparatus provided with a magnetic field forming unit having sufficient capability of protection against ions radiated from plasma while using a relatively small magnetic source. The apparatus includes: a target nozzle for injecting a target material; a driver laser for applying a laser beam to the target material to generate plasma; a collector mirror for collecting extreme ultraviolet light radiated from the plasma; and a magnetic field forming unit including at least one magnetic source and at least one magnetic material having two leading end parts projecting from the at least one magnetic source to face each other with a plasma emission point in between, and forming a magnetic field between a trajectory of the target material and the collector mirror.
摘要:
A chamber apparatus used with a laser apparatus may include: a chamber provided with at least one inlet for introducing thereinto a laser beam outputted from the laser apparatus; a target supply unit provided to the chamber for supplying a target material to a predetermined region in the chamber; a recovery control unit for instructing the target supply unit to execute recovery operation if a predetermined condition is met; a recovery unit for executing the recovery operation in response to the instruction from the recovery control unit; and a position measuring unit for measuring a position of the target material supplied from the target supply unit into the chamber.
摘要:
An extreme ultraviolet (EUV) light source apparatus in which a location or posture shift of an EUV collector mirror can be detected. The apparatus includes: a chamber; a target supply mechanism for supplying a target material into the chamber; a driver laser for irradiating the target material with a laser beam to generate plasma; a collector mirror having a first focal point and a second focal point, for reflecting light, which is generated at the first focal point, toward the second focal point; a splitter optical element provided in an optical path of the light reflected by the collector mirror, for splitting a part of the light reflected by the collector mirror; and an image sensor provided in an optical path of the light split by the splitter optical element, for detecting a profile of the light split by the splitter optical element.