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1.发明授权Low TCE polyimides as improved insulator in multilayer interconnect structures 失效低TCE聚酰亚胺作为多层互连结构中改进的绝缘体
公开(公告)号：US5976710A
公开(公告)日：1999-11-02
申请号：US838757
申请日：1997-04-10
申请人： Krishna Gandhi Sachdev , John Patrick Hummel , Sundar Mangalore Kamath , Robert Neal Lang , Anton Nendaic , Charles Hampton Perry , Harbans Sachdev
发明人： Krishna Gandhi Sachdev , John Patrick Hummel , Sundar Mangalore Kamath , Robert Neal Lang , Anton Nendaic , Charles Hampton Perry , Harbans Sachdev
IPC分类号： C08G73/10 , H01L23/12 , H01L23/14 , H01L23/498 , H01L23/52 , H01L23/532 , H01L23/538 , H01L29/12
CPC分类号： H01L23/49894 , H01L23/5329 , H01L2924/0002 , H01L2924/09701 , Y10T428/12528 , Y10T428/12549 , Y10T428/12569 , Y10T428/12632 , Y10T428/31681 , Y10T428/31721
摘要： A multilevel high density interconnect structure of a semiconductor device or package including a substrate having at least one conductive feature therein, a film of a polyimide composition on the substrate and selected from the group consisting of a cured product of a polyamic acid and a cured product of a polyamic ester. The polyamic acid is prepared by reacting a stoichiometric excess of a linear aromatic diamine and aromatic dianhydride to form a first reaction product where the molar ratio of said diamine to said aromatic anhydride is in the range from 100:97 to 100:99.5 and then reacting the first reaction product with an aromatic anhydride. The polyamic ester is prepared by reacting a stoichiometric excess of a linear aromatic diamine and an aromatic diester diacyl chloride to form a second reaction product where the molar ratio of said diamine to said diester diacyl chloride is in the range from 100:97 to 100:99.5 and then reacting the second reaction product with aromatic anhydride. There is at least one interconnective conductive metallurgical feature in the film a polyimide composition in contact with said conductive feature in said substrate.
摘要翻译： 一种半导体器件或封装的多层高密度互连结构，其包括其中具有至少一个导电特征的衬底，所述衬底上的聚酰亚胺组合物的膜选自聚酰胺酸和固化产物的固化产物 的聚酰胺酯。 聚酰胺酸通过使化学计量过量的线性芳族二胺和芳族二酸酐反应以形成第一反应产物，其中所述二胺与所述芳族酸酐的摩尔比在100:97至100:99.5的范围内，然后使 第一反应产物与芳族酸酐反应。 通过使化学计量过量的线性芳族二胺和芳族二酯二酰氯反应形成第二反应产物，其中所述二胺与所述二酯二酰氯的摩尔比为100：97至100： 99.5，然后使第二反应产物与芳族酸酐反应。 在膜中存在与所述衬底中的所述导电特征接触的聚酰亚胺组合物中的至少一个互连导电冶金特征。
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2.发明授权Aryl cyanate and/or diepoxide and hydroxymethylated phenolic or hydroxystyrene resin 失效芳基氰酸酯和/或二环氧化物和羟甲基化酚或羟基苯乙烯树脂
公开(公告)号：US5955543A
公开(公告)日：1999-09-21
申请号：US859975
申请日：1997-05-21
IPC分类号： C08L61/06 , C08L61/14 , C09D179/04 , C09J163/00 , C09J163/02 , C09J179/04 , H01L21/58 , C08K3/08 , C08L63/00 , C08L63/02 , C08L79/00
CPC分类号： H01L24/28 , C08L61/06 , C08L61/14 , C09D179/04 , C09J163/00 , C09J179/04 , H01L24/83 , H01L2224/2919 , H01L2224/8319 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01027 , H01L2924/01029 , H01L2924/01039 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/0132 , H01L2924/0665 , H01L2924/07802 , H01L2924/14 , H01L2924/15787 , H01L2924/351
摘要： An adhesive for bonding a die of an integrated circuit chip comprises an aryl cyanate (ester) resin alone and/or a diepoxide resin admixed with a hydroxymethylated phenolic resin or hydroxymethylated poly(hydroxystyrene) which can further contain an electrically or thermally conductive filler.
摘要翻译： 用于粘合集成电路芯片的芯片的粘合剂包括单独的芳基氰酸酯（酯）树脂和/或与羟甲基化酚醛树脂或羟甲基化聚（羟基苯乙烯）混合的二环氧树脂，其可以进一步含有导电或导热填料。
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公开(公告)号：US06228511B1
公开(公告)日：2001-05-08
申请号：US09429814
申请日：1999-10-29
申请人： Krishna Gandhi Sachdev , Benedikt Maria Johannes Kellner , Kathleen Mary Mc Guire , Peter Jerome Sorce
发明人： Krishna Gandhi Sachdev , Benedikt Maria Johannes Kellner , Kathleen Mary Mc Guire , Peter Jerome Sorce
IPC分类号： B32B302
CPC分类号： H01L23/5384 , H01L21/486 , H01L23/5383 , H01L2924/0002 , H05K3/0032 , H05K3/0035 , H05K3/0061 , H05K3/007 , H05K3/388 , H05K3/4076 , H05K3/423 , H05K3/445 , H05K3/4614 , H05K3/4617 , H05K3/4641 , H05K2201/0154 , H05K2201/068 , H05K2201/09554 , H05K2201/09563 , H05K2201/096 , H05K2203/0152 , Y10T29/49165 , Y10T428/12361 , Y10T428/12382 , Y10T428/12556 , Y10T428/12569 , Y10T428/12806 , Y10T428/12812 , Y10T428/24777 , Y10T428/31678 , Y10T428/31681 , H01L2924/00
摘要： This invention relates generally to a structure and process for thin film interconnect, and more particularly to a structure and process for a multilayer thin film interconnect structure with improved dimensional stability and electrical performance. The invention further relates to a process of fabrication of the multilayer thin film structures. The individual thin film structure is termed a compensator, and functions as both a ground/reference plane and as a stabilizing entity with regard to dimensional integrity. The compensator is comprised primarily of a metal sheet having a metallized via pattern and high-temperature stable polymer as an insulator.
摘要翻译： 本发明一般涉及薄膜互连的结构和工艺，更具体地说涉及具有改进的尺寸稳定性和电性能的多层薄膜互连结构的结构和工艺。 本发明还涉及多层薄膜结构的制造方法。 单个薄膜结构被称为补偿器，并且在尺寸完整性方面起着地面/参考平面和稳定实体的作用。 补偿器主要由具有金属化通孔图案和作为绝缘体的高温稳定聚合物的金属片构成。
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公开(公告)号：US6165629A
公开(公告)日：2000-12-26
申请号：US6414
申请日：1993-01-21
申请人： Krishna Gandhi Sachdev , Benedikt Maria Johannes Kellner , Kathleen Mary McGuire , Peter Jerome Sorce
发明人： Krishna Gandhi Sachdev , Benedikt Maria Johannes Kellner , Kathleen Mary McGuire , Peter Jerome Sorce
IPC分类号： H01L23/522 , C08G73/10 , H01L21/48 , H01L21/768 , H01L23/538 , H05K1/05 , H05K3/00 , H05K3/38 , H05K3/40 , H05K3/42 , H05K3/44 , H05K3/46 , B32B15/08
CPC分类号： H01L23/5384 , H01L21/486 , H01L23/5383 , H01L2924/0002 , H05K3/0032 , H05K3/0035 , H05K3/0061 , H05K3/007 , H05K3/388 , H05K3/4076 , H05K3/423 , H05K3/445 , H05K3/4614 , H05K3/4617 , H05K3/4641 , H05K2201/0154 , H05K2201/068 , H05K2201/09554 , H05K2201/09563 , H05K2201/096 , H05K2203/0152 , Y10T29/49165 , Y10T428/12361 , Y10T428/12382 , Y10T428/12556 , Y10T428/12569 , Y10T428/12806 , Y10T428/12812 , Y10T428/24777 , Y10T428/31678 , Y10T428/31681 , H01L2924/00
摘要： This invention relates generally to a structure and process for thin film interconnect, and more particularly to a structure and process for a multilayer thin film interconnect structure with improved dimensional stability and electrical performance. The invention further relates to a process of fabrication of the multilayer thin film structures. The individual thin film structure is termed a compensator, and functions as both a ground/reference plane and as a stabilizing entity with regard to dimensional integrity. The compensator is comprised primarily of a metal sheet having a metallized via pattern and high-temperature stable polymer as an insulator.
摘要翻译： 本发明一般涉及薄膜互连的结构和工艺，更具体地说涉及具有改进的尺寸稳定性和电性能的多层薄膜互连结构的结构和工艺。 本发明还涉及多层薄膜结构的制造方法。 单个薄膜结构被称为补偿器，并且在尺寸完整性方面起着地面/参考平面和稳定实体的作用。 补偿器主要由具有金属化通孔图案和作为绝缘体的高温稳定聚合物的金属片构成。
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5.发明授权Polymer sealants/adhesives and use thereof in electronic package assembly 失效聚合物密封剂/粘合剂及其在电子封装组件中的用途
公开(公告)号：US5773561A
公开(公告)日：1998-06-30
申请号：US692033
申请日：1996-08-02
IPC分类号： C08L79/08 , C08G73/10 , C09J179/08 , C09J183/10 , H01L21/52 , C08G69/26
CPC分类号： C09J183/10 , C08G73/1042 , C08G73/106 , C09J179/08 , Y10T428/31681
摘要： The present invention relates generally to a new adhesive comprising a vinyl containing siloxane-containing polyimide for use in TSM capping of electronic package assemblies with adhesive capability of providing a seal band width of less than 4mm and even less than 2mm, solubility in non-toxic and environmentally safe solvents and durable adhesive properties and to a method for making the polyimides, a method for using the polyimides to make electronic packages and electronic packages made using the adhesive. The preferred vinyl-containing siloxane containing polyimide is a block type polymer containing blocks of a dianhydride-aromatic diamine oligomeric reaction product joined by non-vinyl/vinyl containing siloxane diamine forming links.
摘要翻译： 本发明一般涉及包含含乙烯基的含硅氧烷的聚酰亚胺的新型粘合剂，用于电子封装组件的TSM封盖，具有提供小于4mm甚至小于2mm的密封带宽度的粘合能力，在无毒的溶解度 和环境安全的溶剂和耐久的粘合性能以及制造聚酰亚胺的方法，使用聚酰亚胺制造使用该粘合剂制成的电子封装和电子封装的方法。 优选的含乙烯基的含硅氧烷的聚酰亚胺是含有通过非乙烯基/乙烯基的硅氧烷二胺形成连接物连接的二酐 - 芳族二胺低聚反应产物的嵌段的嵌段型聚合物。
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公开(公告)号：US06515061B1
公开(公告)日：2003-02-04
申请号：US08958848
申请日：1997-10-28
IPC分类号： C08K308
摘要： A paste composition having a high thermal conductivity and a relatively low viscosity is used to provide a thermal conductive connection between an electronic component and a cooling device to increase the heat transfer rate between the component and the device cooling the electronic component. The paste composition comprises a non-aqueous dielectric carrier, thermally conductive filler particles and a specially defined dispersant comprising the self-condensation reaction product of a hydroxy fatty acid, the reaction product having an acid number of about 30-100. A 12-hydroxy stearic acid self condensed reaction product is the preferred dispersant.
摘要翻译： 使用具有高热导率和较低粘度的糊剂组合物来提供电子部件和冷却装置之间的导热连接，以增加部件和冷却电子部件的装置之间的传热速率。 糊状组合物包含非水介电载体，导热填料颗粒和特别限定的分散剂，其包含羟基脂肪酸的自缩合反应产物，该反应产物的酸值为约30-100。 12-羟基硬脂酸自缩合反应产物是优选的分散剂。
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7.发明授权Aryl Cyanate and/or diepoxide and tetrahydropyranyl-protected hydroxymethylated phenolic or hydroxystyrene resin 有权氰基氰化物和/或二环氧化物和四氢吡喃基保护的羟甲基化酚或羟基苯乙烯树脂
公开(公告)号：US6114450A
公开(公告)日：2000-09-05
申请号：US304610
申请日：1999-05-04
IPC分类号： C08L61/06 , C08L61/14 , C09D179/04 , C09J163/00 , C09J163/02 , C09J179/04 , H01L21/58 , C08K3/08 , C08L63/00 , C08L63/02 , C08L79/00
CPC分类号： H01L24/28 , C08L61/06 , C08L61/14 , C09D179/04 , C09J163/00 , C09J179/04 , H01L24/83 , H01L2224/2919 , H01L2224/8319 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01027 , H01L2924/01029 , H01L2924/01039 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/0132 , H01L2924/0665 , H01L2924/07802 , H01L2924/14 , H01L2924/15787 , H01L2924/351
摘要： An adhesive for bonding a die of an integrated circuit chip comprises an aryl cyanate (ester) resin and/or a diepoxide resin admixed with tetrahydropyranyl-protected hydroxylmethylated phenolic resin or hydroxymethylated poly(hydroxystyrene) optionally further containing an electrically or thermally conductive filler.
摘要翻译： 用于结合集成电路芯片的芯片的粘合剂包括与四氢吡喃基保护的羟甲基化酚醛树脂或羟甲基化聚（羟基苯乙烯）混合的芳基氰酸酯（酯）树脂和/或二环氧树脂，任选地还含有导电或导热填料。
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