Polyimide precursor, polyimide and their use
    4.
    发明授权
    Polyimide precursor, polyimide and their use 有权
    聚酰亚胺前体,聚酰亚胺及其用途

    公开(公告)号:US06309791B1

    公开(公告)日:2001-10-30

    申请号:US09634582

    申请日:2000-08-08

    IPC分类号: G03F7075

    摘要: A polyimide precursor having repeating units of the formula: wherein R1 is a tetravalent organic group; and R2 is a divalent diphenyl group, is excellent in image formation and particularly suitable for forming a pattern using an i-line stepper, and gives a photosensitive resin composition by imparting photosensitivity to the polyimide precursor, said photosensitive resin composition being suitable for forming surface protective films for semiconductor devices or interlaminar insulating films for multilayer wiring boards.

    摘要翻译: 一种具有下式重复单元的聚酰亚胺前体:其中R1是四价有机基团; R2是二价二苯基,图像形成优异,特别适合于使用i线步进机形成图案,并且通过赋予聚酰亚胺前体光敏性得到感光性树脂组合物,所述感光性树脂组合物适于形成表面 用于半导体器件的保护膜或用于多层布线板的层间绝缘膜。

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    8.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20090137129A1

    公开(公告)日:2009-05-28

    申请号:US12064511

    申请日:2005-08-22

    IPC分类号: H01L21/3065

    摘要: A method is provided for manufacturing a semiconductor device having a heat-resistant resin film with flip-chip connection structure using a solder bump or a gold bump and an epoxy resin compound laminated thereon, in which adhesiveness is improved particularly after exposure to high temperature and high humidity environments for a long period of time, thereby enhancing the reliability of the semiconductor device. The method, in accordance with the present invention, for manufacturing a semiconductor device having a heat-resistant resin film formed on a semiconductor element and an epoxy resin compound layer laminated thereon, comprises the steps of carrying out a plasma treatment on a surface of the heat-resistant resin film on which the epoxy resin compound layer is laminated using a nitrogen atom-containing gas containing at least one of nitrogen, ammonia, and hydrazine.

    摘要翻译: 提供一种制造半导体器件的方法,该半导体器件具有使用焊料凸块或金凸块的倒​​装芯片连接结构的耐热树脂膜和层压在其上的环氧树脂化合物,其中特别是在暴露于高温之后粘合性得到改善, 高湿度环境长时间,从而提高半导体器件的可靠性。 根据本发明的用于制造在半导体元件上形成的耐热树脂膜和层压在其上的环氧树脂化合物层的半导体器件的方法包括以下步骤:在所述半导体元件的表面上进行等离子体处理 使用包含氮,氨和肼中的至少一种的含氮原子的气体层压环氧树脂化合物层的耐热性树脂膜。