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115 条记录 (耗时 0.025 秒)

    Epoxy resin composition
    2.
    发明授权
    Epoxy resin composition 失效
    环氧树脂组合物

    公开(公告)号：US4877822A

    公开(公告)日：1989-10-31

    申请号：US179538

    申请日：1988-04-08

    申请人： Kunio Itoh ,  Toshio Shiobara ,  Koji Futatsumori ,  Kazutoshi Tomiyoshi ,  Hisashi Shimizu

    发明人： Kunio Itoh ,  Toshio Shiobara ,  Koji Futatsumori ,  Kazutoshi Tomiyoshi ,  Hisashi Shimizu

    IPC分类号： C08G59/34 ,  C08G77/42 ,  C08L63/00 ,  H05K1/03

    CPC分类号： C08G59/027 ,  C08G77/42 ,  C08L63/00 ,  H05K1/0353

    摘要： An epoxy resin composition which comprises a curable epoxy resin, a curing agent, an inorganic filler, and at least one copolymer selected from copolymers obtained by an addition reaction between aromatic polymers containing one or more epoxy groups and one or more alkenyl groups and the specific organopolysiloxanes; copolymers obtained by an addition reaction between aromatic polymers containing one or more epoxy groups and the specific amino group-containing organopolysiloxanes.

    摘要翻译： 一种环氧树脂组合物，其包含可固化环氧树脂，固化剂，无机填料和至少一种共聚物，所述共聚物选自通过在含有一个或多个环氧基和一个或多个烯基的芳族聚合物之间的加成反应获得的共聚物， 有机聚硅氧烷; 通过含有一个或多个环氧基的芳族聚合物与特定含氨基的有机聚硅氧烷之间的加成反应获得的共聚物。

    Epoxy resin-based curable compositions
    5.
    发明授权
    Epoxy resin-based curable compositions 失效
    环氧树脂基可固化组合物

    公开(公告)号：US4902732A

    公开(公告)日：1990-02-20

    申请号：US928654

    申请日：1986-11-05

    申请人： Kunio Itoh ,  Sumiko Komiya ,  Toshio Shiobara ,  Kazutoshi Tomiyoshi ,  Yoshio Fujimura

    发明人： Kunio Itoh ,  Sumiko Komiya ,  Toshio Shiobara ,  Kazutoshi Tomiyoshi ,  Yoshio Fujimura

    IPC分类号： C08G77/42 ,  C08L63/00 ,  C08L83/10 ,  H01B3/36 ,  H01B3/40 ,  H01B3/46

    CPC分类号： H01B3/46 ,  C08G77/42 ,  C08L63/00 ,  C08L83/10 ,  H01B3/36 ,  H01B3/40

    摘要： The present invention provides a novel epoxy resin-based curable composition suitable for use as an encapsulating resin composition for semiconductor devices capable of being highly resistant against crack formation with low internal stress by curing and yet having very high heat conductivity and maintaining high glass transition temperature. The inventive composition comprises (a) 100 parts by weight of a curable epoxy resin blend which is a mixture of an epoxy resin and a curing agent therefor, (b) from 5 to 100 parts by weight of a block copolymer composed of at least one segment of an aromatic polymeric moiety, phenyl novolac, and at least one segment of an organopolysiloxane moiety having 30 to 200 silicon atoms and bonded to the aromatic polymeric moiety through a carbon-to-silicon linkage, and optionally (c) an inorganic filler which is preferably a silica filler such as powdered quartz in an amount not exceeding 1000 parts by weight.

    摘要翻译： 本发明提供一种适用于半导体器件的封装树脂组合物的新型环氧树脂类固化性组合物，能够通过固化而具有低内应力的高裂纹形成，并具有非常高的导热性和保持高的玻璃化转变温度 。 本发明的组合物包含（a）100重量份作为环氧树脂和其固化剂的混合物的可固化环氧树脂共混物，（b）5至100重量份的由至少一种 芳族聚合物部分的段，苯基酚醛清漆和至少一个具有30-200个硅原子的有机聚硅氧烷部分，并通过碳 - 硅键连接到芳族聚合物部分，和任选地（c）无机填料， 优选为不超过1000重量份的二氧化硅填料，例如石英粉末。

    Method for forming a surface film of cured organosilicon polymer on a substrate surface
    7.
    发明授权
    Method for forming a surface film of cured organosilicon polymer on a substrate surface 失效
    在基材表面上形成固化的有机硅聚合物的表面膜的方法

    公开(公告)号：US4678688A

    公开(公告)日：1987-07-07

    申请号：US834906

    申请日：1986-02-28

    申请人： Kunio Itoh ,  Shohei Kozakai ,  Yoshinori Hida ,  Hiroshige Okinoshima ,  Fumio Okada ,  Toshio Oba ,  Hisashi Shimizu ,  Yuji Hinoto ,  Hiroshi Yoshioka

    发明人： Kunio Itoh ,  Shohei Kozakai ,  Yoshinori Hida ,  Hiroshige Okinoshima ,  Fumio Okada ,  Toshio Oba ,  Hisashi Shimizu ,  Yuji Hinoto ,  Hiroshi Yoshioka

    IPC分类号： C08G77/54 ,  C09D183/14 ,  B05D3/02

    CPC分类号： C08J7/047 ,  C08G77/54 ,  C09D183/14 ,  C08J2483/00

    摘要： The inventive method for forming a cured film on a substrate surface comprises coating the surface with a room temperature curable organosiloxazane polymer comprising, in a molecule, (a) at least one organosiloxane unit represented by the unit formula (a) at least one organosiloxane unit represented by the unit formulaR.sup.1.sub.a SiO.sub.(4-a)/2,and (b) at least one organosilazane unit represented by the unit formulaR.sup.2.sub.b Si(NR.sup.3).sub.(4-b)/2,in which R.sup.1, R.sup.2 and R.sup.3 are each a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group, not all of them being simultaneously hydrogen atoms, and the subscripts a and b are each a positive integer of 1, 2 or 3 with the proviso that a and b cannot be simultaneously equal to 3, in a molecule and subjecting the coating film to exposure to a moisture-containing atmosphere. The method is useful for forming a surface-protecting film or for imparting surface releasability.

    摘要翻译： 用于在基材表面上形成固化膜的本发明方法包括用室温可固化的有机硅氮烷聚合物涂覆表面，所述室温可固化的有机硅氮烷聚合物在分子中包含（a）至少一个由式（a）表示的有机硅氧烷单元，至少一个有机硅氧烷单元 由式R1aSiO（4-a）/ 2表示的至少一种有机硅氮烷单元，（b）由单元式R2bSi（NR3）（4-b）/ 2表示的至少一种有机硅氮烷单元，其中R1，R2和R3各自为 氢原子或取代或未取代的一价烃基，并不全部同时为氢原子，下标a和b各自为正整数1,2或3，条件是a和b不能同时为3 在分子中并使涂膜暴露于含水气氛。 该方法可用于形成表面保护膜或赋予表面剥离性。

    Low operating current and low noise semiconductor laser device for optical disk memories
    9.
    发明授权
    Low operating current and low noise semiconductor laser device for optical disk memories 失效
    用于光盘存储器的低工作电流和低噪声半导体激光器件

    公开(公告)号：US5386429A

    公开(公告)日：1995-01-31

    申请号：US40655

    申请日：1993-03-31

    申请人： Hiroki Naito ,  Masahiro Kume ,  Hideyuki Sugiura ,  Toru Takayama ,  Kunio Itoh ,  Issei Ohta ,  Hirokazu Shimizu

    发明人： Hiroki Naito ,  Masahiro Kume ,  Hideyuki Sugiura ,  Toru Takayama ,  Kunio Itoh ,  Issei Ohta ,  Hirokazu Shimizu

    IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/221 ,  H01S5/3211 ,  H01S5/32308 ,  H01S5/3432

    摘要： A semiconductor laser device suitable as a light source for an optical disk may be operated at a low operating current with low noise for the 780 nm band. The device comprises: a certain conduction type Ga.sub.1-Y1 Al.sub.Y1 As first light guide layer, a Ga.sub.1-Y2 Al.sub.Y2 As second light guide layer of said certain conduction type, or an In.sub.0.5 Ga.sub.0.5 P or an In.sub.0.5 (GaAl).sub.0.5 P or an InGaAsP second light guide layer, successively formed one upon another at least in one side of the principal plane of an active layer; an opposite conduction type Ga.sub.1-Z Al.sub.Z As current blocking layer formed on the second light guide layer and provided with a stripe-like window; and a Ga.sub.1-Y3 Al.sub.Y3 As cladding layer of the same conduction type as the light guide layers formed on the stripe-like window. The relations of Z>Y3>Y2 and Y1>Y2 define the AlAs mole fractions.

    摘要翻译： 适合作为光盘的光源的半导体激光器装置可以在780nm波段的低噪声的低工作电流下工作。 该装置包括：一定导电型Ga1-Y1AlY1As第一导光层，具有所述一定导电类型的Ga1-Y2AlY2As第二导光层，或In0.5Ga0.5P或In0.5（GaAl）0.5P或InGaAsP 第二导光层，在有源层的主平面的至少一个侧面依次形成; 形成在第二导光层上并具有条状窗的相反导电型Ga1-ZAlZAs电流阻挡层; 以及与形成在条状窗上的导光层相同的导电类型的Ga1-Y3AlY3As包覆层。 Z> Y3> Y2和Y1> Y2的关系定义了AlAs摩尔分数。