Optical metrological scale and laser-based manufacturing method therefor
    1.
    发明申请
    Optical metrological scale and laser-based manufacturing method therefor 有权
    光学计量尺度和激光制造方法

    公开(公告)号:US20070240325A1

    公开(公告)日:2007-10-18

    申请号:US11546024

    申请日:2006-10-11

    IPC分类号: B23K26/00 A45B3/08

    摘要: A reflective metrological scale has a scale pattern of elongated side-by-side marks surrounded by reflective surface areas of a substrate, which may be a nickel-based metal alloy such as Invar® or Inconel® and may be a thin and elongated flexible tape. Each mark has a furrowed cross section and may have a depth in the range of 0.5 to 2 microns. The central region of each mark may be rippled or ridged and may be darkened to provide an enhanced optical reflection ratio with respect to surrounding reflective surface areas. A manufacturing method includes the repeated steps of (1) creating a scale mark by irradiating a surface of the substrate at a mark location with a series of overlapped pulses from a laser, each pulse having an energy density of less than about 1 joule per cm2, and (2) changing the relative position of the laser and the substrate by a displacement amount defining a next mark location on the substrate at which a next mark of the scale is to be created.

    摘要翻译: 反射计量尺度具有由基底的反射表面区域包围的细长的并排标记的刻度图形,其可以是诸如Invar或Inconel的镍基金属合金,并且可以是薄的 和细长的柔性胶带。 每个标记具有沟槽的横截面并且可以具有在0.5至2微米范围内的深度。 每个标记的中心区域可以是波纹或脊状的,并且可以变暗,以提供相对于周围的反射表面区域的增强的光反射率。 一种制造方法包括以下重复步骤:(1)通过在来自激光的一系列重叠脉冲的标记位置处照射基板的表面来产生刻度标记,每个脉冲的能量密度小于约1焦耳/厘米 < SUP> 2>和(2)通过在衬底上限定下一标记位置的位移量来改变激光和衬底的相对位置,在该衬底上将要生成刻度的下一个标记。

    Methods and apparatus for utilizing an optical reference
    2.
    发明申请
    Methods and apparatus for utilizing an optical reference 有权
    用于使用光学参考的方法和装置

    公开(公告)号:US20070096763A1

    公开(公告)日:2007-05-03

    申请号:US11582829

    申请日:2006-10-18

    IPC分类号: G01R31/26

    摘要: A laser processing system implements a method for aligning a probe element (e.g., a probe pin) with a device interface element (e.g., a contact pad of a circuit substrate). First, the laser processing system generates an optical reference beam at one or more predetermined positions to calibrate a reference field. The laser processing system then detects a position of the probe element in the reference field. The laser processing system also determines a relative position of the device interface element in the reference field. Based on the position of the probe element and the device interface element, the laser processing system then initiates alignment of the probe element and the device interface element. In one application, alignment of the probe element and the device interface element further includes contacting the probe element to the device interface element to make an electrical connection.

    摘要翻译: 激光处理系统实现将探针元件(例如,探针)与装置接口元件(例如,电路基板的接触焊盘)对准的方法。 首先,激光处理系统在一个或多个预定位置处产生光学参考光束,以校准参考场。 激光处理系统然后在参考场中检测探针元件的位置。 激光处理系统还确定设备接口元件在参考场中的相对位置。 基于探针元件和器件接口元件的位置,激光加工系统然后启动探针元件和器件接口元件的对准。 在一个应用中,探针元件和器件接口元件的对准还包括将探针元件接触到器件接口元件以进行电连接。

    Method and system for calibrating a laser processing system and laser marking system utilizing same
    3.
    发明申请
    Method and system for calibrating a laser processing system and laser marking system utilizing same 审中-公开
    用于校准激光加工系统的方法和系统以及利用其的激光打标系统

    公开(公告)号:US20060054608A1

    公开(公告)日:2006-03-16

    申请号:US11266844

    申请日:2005-11-04

    IPC分类号: B23K26/02

    摘要: A method of calibrating a laser marking system includes calibrating a laser marking system in three dimensions. The step of calibrating includes storing data corresponding to a plurality of heights. A position measurement of a workpiece is obtained to be marked. Stored calibration data is associated with the position measurement. A method and system for calibrating a laser processing or marking system is provided. The method includes: calibrating a laser marker over a marking field; obtaining a position measurement of a workpiece to be marked; associating stored calibration data with the position measurement; relatively positioning a marking beam and the workpiece based on at least the associated calibration data; and calibrating a laser marking system in at least three degrees of freedom. The step of calibrating includes storing data corresponding to a plurality of positions and controllably and relatively positioning a marking beam based on the stored data corresponding to the plurality of positions.

    摘要翻译: 校准激光打标系统的方法包括在三维校准激光打标系统。 校准步骤包括存储对应于多个高度的数据。 获得标记工件的位置测量值。 存储的校准数据与位置测量相关联。 提供了一种用于校准激光加工或标记系统的方法和系统。 该方法包括:在标记场校准激光标记; 获得待标记的工件的位置测量; 将存储的校准数据与位置测量相关联; 基于至少相关联的校准数据相对地定位标记光束和工件; 并以至少三个自由度校准激光打标系统。 校准步骤包括存储对应于多个位置的数据,并且基于对应于多个位置的所存储的数据可控地并相对地定位标记光束。

    Method and system for precisely positioning a waist of a material-processing laser beam to process microstructures within a laser-processing site

    公开(公告)号:US20050184036A1

    公开(公告)日:2005-08-25

    申请号:US11114520

    申请日:2005-04-26

    摘要: A high-speed method and system for precisely positioning a waist of a material-processing laser beam to dynamically compensate for local variations in height of microstructures located on a plurality of objects spaced apart within a laser-processing site are provided. In the preferred embodiment, the microstructures are a plurality of conductive lines formed on a plurality of memory dice of a semiconductor wafer. The system includes a focusing lens subsystem for focusing a laser beam along an optical axis substantially orthogonal to a plane, an x-y stage for moving the wafer in the plane, and a first air bearing sled for moving the focusing lens subsystem along the optical axis. The system also includes a first controller for controlling the x-y stage based on reference data which represents 3-D locations of microstructures to be processed within the site, a second controller, and a first voice coil coupled to the second controller for positioning the first air bearing sled along the optical axis also based on the reference data. The reference data is generated by the system which includes a modulator for reducing power of the material-processing laser beam to obtain a probe laser beam to measure height of the semiconductor wafer at a plurality of locations about the site to obtain reference height data. A computer computes a reference surface based on the reference height data. A trajectory planner generates trajectories for the wafer and the waist of the laser beam based on the reference surface. The x-y stage and the first air bearing sled controllably move the wafer and the focusing lens subsystem, respectively, to precisely position the waist of the laser beam so that the waist substantially coincides with the 3-D locations of the microstructures within the site. The system also includes a spot size lens subsystem for controlling size of the waist of the laser beam, a second air bearing sled for moving the spot size lens subsystem along the optical axis, a third controller for controlling the second air bearing sled, and a second voice coil coupled to the third controller for positioning the second air bearing sled along the optical axis.