摘要:
An electrochromic device with high transmittance is for use as a display device. The electrochromic device includes at least a first and a second electrode formed on an insulative substrate and a conductive layer formed in contact with the insulative substrate, the first electrode, and the second electrode. Since an electrode layer functions in one layer, the transmittance through the device is enhanced, and the device can be fabricated in a simple process, allowing a reduction in the device fabrication costs.
摘要:
An image display device includes a resin film, an organic film which is formed above the resin film, a circuit layer which is formed above the organic film and includes at least a thin film transistor, and a barrier layer which is formed between the organic film and the circuit layer. The organic film has a first surface which faces the circuit layer and a side surface which crosses the first surface. The barrier layer covers the first surface and the side surface.
摘要:
A liquid crystal display, having an improved application of electric field to the molecules of liquid crystal, includes a substrate and a pixel array bonded to the surface of this substrate, and the pixel array includes at least a thin-film transistor and a pixel electrode connected with this thin-film transistor, and the pixel electrode is formed in a layer higher than the thin-film transistor in relation to the substrate.
摘要:
A metallic oxide semiconductor device with high performance and small variations. It is a field effect transistor using a metallic oxide film for the channel, which includes a channel region and a source region and comprises a drain region with a lower oxygen content than the channel region in the metallic oxide, in which the channel region exhibits semiconductor characteristics and the oxygen content decreases with depth below the surface.
摘要:
A TFT device having a pixel portion and a driving circuit portion formed on a glass substrate; wherein at least the active layer (active region) of a transistor constituting said driving circuit comprises polycrystalline silicon including crystals that do not have crystal grain boundaries which cross the direction of current flow.
摘要:
Provided is an image display device, including: a first flexible substrate; and a circuit-forming layer constituting an image display area, the circuit-forming layer being made to adhere to one of surfaces of the first flexible substrate, in which, when the first flexible substrate has a thickness of t2, the circuit-forming layer has a thickness of t1 satisfying the following Equation (1): t1≧3/40×(t2-23) (1).
摘要:
There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.
摘要:
The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.
摘要:
Provided is a method of manufacturing a display device having a step of forming a resin material layer by curing a resin coated on the main surface of a glass substrate; a step of forming a display circuit configured by a plurality of lamination material layers on the main surface side of said resin material layer; and a step of generating exfoliation at the interface between said resin material layer and said glass substrate, by irradiating a ultraviolet ray from the surface on the opposite side to the surface provided with said display circuit of said glass substrate, and said resin material layer, from which said glass substrate is removed, is used as a substrate provided with said display circuit.
摘要:
A large number of pixels PXL are arranged in a matrix fashion in a display region DSP on an insulating substrate. Disposed around the display region DSP are a drain-side pixel-driving circuit including a drain shift register DSR, a digital-to-analog converter circuit DAC, a drain level shifter DLS, a buffer BF and sampling switches SSW; and a gate-side pixel-driving circuit including a gate shift register GSR and a gate level shifter GLS, and various kinds of circuits. Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the respective circuits.