Display and displaying method
    1.
    发明申请
    Display and displaying method 审中-公开
    显示和显示方式

    公开(公告)号:US20060018001A1

    公开(公告)日:2006-01-26

    申请号:US10998653

    申请日:2004-11-30

    IPC分类号: G02F1/15

    摘要: An electrochromic device with high transmittance is for use as a display device. The electrochromic device includes at least a first and a second electrode formed on an insulative substrate and a conductive layer formed in contact with the insulative substrate, the first electrode, and the second electrode. Since an electrode layer functions in one layer, the transmittance through the device is enhanced, and the device can be fabricated in a simple process, allowing a reduction in the device fabrication costs.

    摘要翻译: 具有高透射率的电致变色装置用作显示装置。 电致变色装置至少包括形成在绝缘基板上的第一电极和第二电极以及与绝缘基板,第一电极和第二电极接触形成的导电层。 由于电极层在一层中起作用,所以通过该装置的透射率得到增强,并且可以以简单的工艺制造器件,从而可以降低器件制造成本。

    Liquid crystal display
    3.
    发明授权
    Liquid crystal display 有权
    液晶显示器

    公开(公告)号:US08139173B2

    公开(公告)日:2012-03-20

    申请号:US12216581

    申请日:2008-07-08

    IPC分类号: G02F1/133 G02F1/1343

    摘要: A liquid crystal display, having an improved application of electric field to the molecules of liquid crystal, includes a substrate and a pixel array bonded to the surface of this substrate, and the pixel array includes at least a thin-film transistor and a pixel electrode connected with this thin-film transistor, and the pixel electrode is formed in a layer higher than the thin-film transistor in relation to the substrate.

    摘要翻译: 具有改善对液晶分子的电场应用的液晶显示器包括基板和与该基板的表面接合的像素阵列,像素阵列至少包括薄膜晶体管和像素电极 与该薄膜晶体管连接,并且像素电极相对于衬底形成在比薄膜晶体管高的层中。

    Semiconductor device and method for manufacturing the same
    4.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US07977675B2

    公开(公告)日:2011-07-12

    申请号:US12423053

    申请日:2009-04-14

    IPC分类号: H01L29/12

    摘要: A metallic oxide semiconductor device with high performance and small variations. It is a field effect transistor using a metallic oxide film for the channel, which includes a channel region and a source region and comprises a drain region with a lower oxygen content than the channel region in the metallic oxide, in which the channel region exhibits semiconductor characteristics and the oxygen content decreases with depth below the surface.

    摘要翻译: 具有高性能和小变化的金属氧化物半导体器件。 它是一种使用金属氧化物膜作为沟道的场效应晶体管,其包括沟道区和源极区,并且包括具有比金属氧化物中的沟道区更低的氧含量的漏区,其中沟道区表现出半导体 特性和氧含量随着表面深度的减小而减小。

    IMAGE DISPLAY DEVICE
    6.
    发明申请
    IMAGE DISPLAY DEVICE 审中-公开
    图像显示设备

    公开(公告)号:US20100214525A1

    公开(公告)日:2010-08-26

    申请号:US12702881

    申请日:2010-02-09

    IPC分类号: G02F1/1333 H01J1/62 H05K1/00

    CPC分类号: G02F1/133305 G02F2201/54

    摘要: Provided is an image display device, including: a first flexible substrate; and a circuit-forming layer constituting an image display area, the circuit-forming layer being made to adhere to one of surfaces of the first flexible substrate, in which, when the first flexible substrate has a thickness of t2, the circuit-forming layer has a thickness of t1 satisfying the following Equation (1): t1≧3/40×(t2-23)  (1).

    摘要翻译: 提供一种图像显示装置,包括:第一柔性基板; 以及构成图像显示区域的电路形成层,所述电路形成层粘附到所述第一柔性基板的一个表面上,其中当所述第一柔性基板具有厚度为t2时,所述电路形成层 具有满足下述式(1)的t1的厚度:t1≥3/ 40×(t2-23)(1)。

    Method for fabricating image display device
    7.
    发明授权
    Method for fabricating image display device 有权
    图像显示装置的制造方法

    公开(公告)号:US07666769B2

    公开(公告)日:2010-02-23

    申请号:US11702576

    申请日:2007-02-06

    IPC分类号: H01L21/20

    摘要: There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.

    摘要翻译: 提供一种制造具有有源矩阵基板的图像显示装置的方法,所述有源矩阵基板包括以高迁移率运行的高性能晶体管电路作为用于驱动作为矩阵布置的像素部分的驱动电路。 形成在设置在构成图像显示装置的有源矩阵基板SUB1的像素区域PAR的周围的驱动电路区域DAR1中的多晶硅膜的部分被照射并用脉冲调制激光束或伪CW激光束扫描 重新形成具有在扫描方向上连续的晶体边界的准带状晶体硅膜,从而形成各自由准带状晶体硅膜构成的离散重整区域。 在由分立重构区域构成的虚拟瓦片TL中,形成具有诸如薄膜晶体管等有源元件的驱动电路,使得其沟道方向与准带状晶体硅中的晶体生长方向一致 电影。

    Liquid crystal display device and dielectric film usable in the liquid crystal display device
    8.
    发明授权
    Liquid crystal display device and dielectric film usable in the liquid crystal display device 有权
    可用于液晶显示装置的液晶显示装置和电介质膜

    公开(公告)号:US07586554B2

    公开(公告)日:2009-09-08

    申请号:US11583882

    申请日:2006-10-20

    IPC分类号: G02F1/136

    摘要: The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.

    摘要翻译: 本发明提供一种低功耗的高图像可见度的液晶显示装置,通过使用具有低介电常数,高耐热性,高透光率,高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置 以低成本生产的扁平性。 使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。 层间电介质膜中的氮含量与硅含量(Ni含量/ Si含量)的比例以元素比控制在0.04以上。 抑制和限制由层间电介质膜的增厚引起的裂纹的限制膜厚设定为1.5μm以上。

    Method of manufacturing display device
    9.
    发明申请
    Method of manufacturing display device 审中-公开
    显示装置的制造方法

    公开(公告)号:US20080292786A1

    公开(公告)日:2008-11-27

    申请号:US12153568

    申请日:2008-05-21

    IPC分类号: B05D5/06

    摘要: Provided is a method of manufacturing a display device having a step of forming a resin material layer by curing a resin coated on the main surface of a glass substrate; a step of forming a display circuit configured by a plurality of lamination material layers on the main surface side of said resin material layer; and a step of generating exfoliation at the interface between said resin material layer and said glass substrate, by irradiating a ultraviolet ray from the surface on the opposite side to the surface provided with said display circuit of said glass substrate, and said resin material layer, from which said glass substrate is removed, is used as a substrate provided with said display circuit.

    摘要翻译: 提供一种制造显示装置的方法,该显示装置具有通过固化涂覆在玻璃基板的主表面上的树脂来形成树脂材料层的步骤; 在所述树脂材料层的主表面上形成由多层叠材料层构成的显示电路的步骤; 以及通过从设置有所述玻璃基板的所述显示电路的表面的相反侧的表面照射紫外线和所述树脂材料层,在所述树脂材料层和所述玻璃基板之间的界面处产生剥离的步骤, 将所述玻璃基板从所述玻璃基板除去,用作设置有所述显示电路的基板。

    LCD with first and second circuit regions each with separately optimized transistor properties
    10.
    发明授权
    LCD with first and second circuit regions each with separately optimized transistor properties 有权
    LCD具有第一和第二电路区域,每个具有单独优化的晶体管特性

    公开(公告)号:US07456913B2

    公开(公告)日:2008-11-25

    申请号:US11878285

    申请日:2007-07-23

    IPC分类号: G02F1/136

    摘要: A large number of pixels PXL are arranged in a matrix fashion in a display region DSP on an insulating substrate. Disposed around the display region DSP are a drain-side pixel-driving circuit including a drain shift register DSR, a digital-to-analog converter circuit DAC, a drain level shifter DLS, a buffer BF and sampling switches SSW; and a gate-side pixel-driving circuit including a gate shift register GSR and a gate level shifter GLS, and various kinds of circuits. Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the respective circuits.

    摘要翻译: 大量像素PXL以矩阵方式排列在绝缘基板上的显示区域DSP中。 在显示区域DSP周围设置有漏极侧像素驱动电路,其包括漏极移位寄存器DSR,数模转换器电路DAC,漏极电平移位器DLS,缓冲器BF和采样开关SSW; 以及包括栅极移位寄存器GSR和栅极电平移位器GLS的栅极侧像素驱动电路以及各种电路。 构成需要这些像素驱动电路的高速操作的电路区域SX的薄膜晶体管的电流迁移率通过优化各个电路的多个布局,配置和配置的组合来满足各个电路特有的规格而得到改善。