COMPONENT OF A PLASMA PROCESSING APPARATUS INCLUDING AN ELECTRICALLY CONDUCTIVE AND NONMAGNETIC COLD SPRAYED COATING
    2.
    发明申请
    COMPONENT OF A PLASMA PROCESSING APPARATUS INCLUDING AN ELECTRICALLY CONDUCTIVE AND NONMAGNETIC COLD SPRAYED COATING 审中-公开
    等离子体处理装置的组件,包括电导和非喷涂冷喷涂

    公开(公告)号:US20150187615A1

    公开(公告)日:2015-07-02

    申请号:US14578979

    申请日:2014-12-22

    Abstract: A semiconductor plasma processing apparatus used to process semiconductor components comprises a plasma processing chamber, a process gas source in fluid communication with the plasma processing chamber for supplying a process gas into the plasma processing chamber, a RF energy source adapted to energize the process gas into the plasma state in the plasma processing chamber, and a vacuum port for exhausting process gas from the plasma processing chamber. The semiconductor plasma processing apparatus further comprises at least one component wherein the component has a body which has a relative magnetic permeability of about 70,000 or greater and a cold sprayed electrically conductive and nonmagnetic coating on a surface of the body wherein the coating has a thickness greater than the skin depth of a RF current configured to flow therethrough during plasma processing.

    Abstract translation: 用于处理半导体部件的半导体等离子体处理装置包括等离子体处理室,与等离子体处理室流体连通的处理气体源,用于将处理气体供应到等离子体处理室中; RF能量源,其适于将工艺气体激励成 等离子体处理室中的等离子体状态,以及用于从等离子体处理室排出处理气体的真空端口。 半导体等离子体处理装置还包括至少一种组分,其中组分具有约70,000或更大的相对磁导率的本体和在体表面上的冷喷涂的导电和非磁性涂层,其中涂层具有更大的厚度 比在等离子体处理期间配置为流过其中的RF电流的趋肤深度。

    Reference Box for Direct-Drive Radiofrequency Power Supply

    公开(公告)号:US20240404804A1

    公开(公告)日:2024-12-05

    申请号:US18689017

    申请日:2022-09-13

    Abstract: A radiofrequency calibration system for a direct-drive radiofrequency power supply includes a reference box that includes a reference circuit for converting a non-reference input impedance to a reference output impedance. The reference box has an input connector electrically connected to a radiofrequency output coupling of the direct-drive radiofrequency power supply. A radiofrequency power meter has a radiofrequency power input electrically connected to an output connector of the reference box. The radiofrequency power meter has an input impedance and an output impedance that substantially match the reference output impedance of the reference box. A cable has a first end electrically connected to a radiofrequency power output of the radiofrequency power meter and a second end connected to a test load that has an impedance that substantially matches the reference output impedance of the reference box. A controller is connected in data communication with a data interface of the radiofrequency power meter.

    COATING SYSTEM AND METHOD FOR COATING INTERIOR FLUID WETTED SURFACES OF A COMPONENT OF A SEMICONDUCTOR SUBSTRATE PROCESSING APPARATUS
    4.
    发明申请
    COATING SYSTEM AND METHOD FOR COATING INTERIOR FLUID WETTED SURFACES OF A COMPONENT OF A SEMICONDUCTOR SUBSTRATE PROCESSING APPARATUS 有权
    用于涂覆半导体基板处理装置的部件的内部流体湿润表面的涂覆系统和方法

    公开(公告)号:US20150184296A1

    公开(公告)日:2015-07-02

    申请号:US14572087

    申请日:2014-12-16

    Abstract: A coating system for forming an atomic layer deposition (ALD) or a molecular layer deposition (MLD) barrier coating on interior fluid wetted surfaces of a fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus. The coating system includes the fluid handling component, wherein the interior fluid wetted surfaces define a process region of the coating system, a gas supply system in fluid communication with the process region of the component wherein the gas supply system supplies process gases to the process region of the component through the inlet port thereof such that an ALD or MLD barrier coating can be formed on the fluid wetted surfaces of the fluid handling component, and an exhaust system in fluid communication with the process region of the component wherein the exhaust system exhausts the process gases from the process region of the component through the outlet port thereof.

    Abstract translation: 一种用于在半导体衬底处理设备的真空室的流体处理部件的内部流体润湿表面上形成原子层沉积(ALD)或分子层沉积(MLD)阻挡涂层的涂层系统。 涂层系统包括流体处理部件,其中内部流体润湿表面限定涂层系统的工艺区域,与部件的工艺区域流体连通的气体供应系统,其中气体供应系统将工艺气体提供给过程区域 的组件通过其入口使得可以在流体处理组件的流体润湿表面上形成ALD或MLD阻挡涂层,以及与组件的处理区域流体连通的排气系统,其中排气系统排出 从组件的工艺区域通过其出口处理气体。

    CALCULATING POWER INPUT TO AN ARRAY OF THERMAL CONTROL ELEMENTS TO ACHIEVE A TWO-DIMENSIONAL TEMPERATURE OUTPUT
    7.
    发明申请
    CALCULATING POWER INPUT TO AN ARRAY OF THERMAL CONTROL ELEMENTS TO ACHIEVE A TWO-DIMENSIONAL TEMPERATURE OUTPUT 有权
    计算功率输入到热控制元件的阵列以实现二维温度输出

    公开(公告)号:US20150219499A1

    公开(公告)日:2015-08-06

    申请号:US14173149

    申请日:2014-02-05

    Abstract: A method for calculating power input to at least one thermal control element of an electrostatic chuck includes: setting the at least one thermal control element to a first predetermined power level; measuring a first temperature of the at least one thermal control element when the at least one thermal control element is powered at the first predetermined power level; setting the at least one thermal control element to a second predetermined power level; measuring a second temperature of the at least one thermal control element when the at least one thermal control element is powered at the second predetermined power level; calculating a difference between the first temperature and the second temperature; calculating a system response of the at least one thermal control element based on the difference; inverting the system response; and calibrating the at least one thermal control element based on the inverted system response.

    Abstract translation: 一种用于计算静电卡盘的至少一个热控元件的功率输入的方法,包括:将所述至少一个热控制元件设置为第一预定功率水平; 当所述至少一个热控元件以所述第一预定功率水平供电时,测量所述至少一个热控元件的第一温度; 将所述至少一个热控制元件设置到第二预定功率水平; 当所述至少一个热控元件以所述第二预定功率电平供电时,测量所述至少一个热控元件的第二温度; 计算第一温度和第二温度之间的差; 基于所述差异来计算所述至少一个热控制元件的系统响应; 反转系统响应; 以及基于所述反向系统响应来校准所述至少一个热控制元件。

    Calculating power input to an array of thermal control elements to achieve a two-dimensional temperature output
    10.
    发明授权
    Calculating power input to an array of thermal control elements to achieve a two-dimensional temperature output 有权
    计算热控制元件阵列的功率输入以实现二维温度输出

    公开(公告)号:US09435692B2

    公开(公告)日:2016-09-06

    申请号:US14173149

    申请日:2014-02-05

    Abstract: A method for calculating power input to at least one thermal control element of an electrostatic chuck includes: setting the at least one thermal control element to a first predetermined power level; measuring a first temperature of the at least one thermal control element when the at least one thermal control element is powered at the first predetermined power level; setting the at least one thermal control element to a second predetermined power level; measuring a second temperature of the at least one thermal control element when the at least one thermal control element is powered at the second predetermined power level; calculating a difference between the first temperature and the second temperature; calculating a system response of the at least one thermal control element based on the difference; inverting the system response; and calibrating the at least one thermal control element based on the inverted system response.

    Abstract translation: 一种用于计算静电卡盘的至少一个热控元件的功率输入的方法,包括:将所述至少一个热控制元件设置为第一预定功率水平; 当所述至少一个热控元件以所述第一预定功率水平供电时,测量所述至少一个热控元件的第一温度; 将所述至少一个热控制元件设置到第二预定功率水平; 当所述至少一个热控元件以所述第二预定功率电平供电时,测量所述至少一个热控元件的第二温度; 计算第一温度和第二温度之间的差; 基于所述差异来计算所述至少一个热控制元件的系统响应; 反转系统响应; 以及基于所述反向系统响应来校准所述至少一个热控制元件。

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