公开(公告)号：US20210183687A1

公开(公告)日：2021-06-17

申请号：US17181571

申请日：2021-02-22

Applicant: Lam Research Corporation

Inventor： Haoquan Yan ,  Robert Griffith O'Neill ,  Raphael Casaes ,  Jon McChesney ,  Alex Paterson

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/02 ,  H01J37/20 ,  H01J37/32

Abstract: An edge ring arrangement for a processing chamber includes a first ring configured to surround and overlap a radially outer edge of an upper plate of a pedestal arranged in the processing chamber, a second ring arranged below the first moveable ring, wherein a portion of the first ring overlaps the second ring, a first actuator configured to actuate a first pillar to selectively move the first ring to a raised position and a lowered position relative to the pedestal, and a second actuator configured to actuate a second pillar to selectively move the second ring to a raised position and a lowered position relative to the pedestal.

公开(公告)号：US20150187615A1

公开(公告)日：2015-07-02

申请号：US14578979

申请日：2014-12-22

Applicant: Lam Research Corporation

Inventor： John Daugherty ,  Hong Shih ,  Anthony Amadio ,  Tom Stevenson ,  Lin Xu ,  John Michael Kerns ,  Robert Griffith O'Neill ,  Sonia Castillo

IPC: H01L21/67 ,  H01L21/02 ,  C25D11/02 ,  H01L21/3065 ,  C23C24/04 ,  C23C22/73

CPC classification number: H01L21/02274 ,  C23C16/4404 ,  C23C16/50 ,  C23C24/04 ,  C25D11/04 ,  C25D11/38 ,  H01J37/321 ,  H01J37/32669

Abstract: A semiconductor plasma processing apparatus used to process semiconductor components comprises a plasma processing chamber, a process gas source in fluid communication with the plasma processing chamber for supplying a process gas into the plasma processing chamber, a RF energy source adapted to energize the process gas into the plasma state in the plasma processing chamber, and a vacuum port for exhausting process gas from the plasma processing chamber. The semiconductor plasma processing apparatus further comprises at least one component wherein the component has a body which has a relative magnetic permeability of about 70,000 or greater and a cold sprayed electrically conductive and nonmagnetic coating on a surface of the body wherein the coating has a thickness greater than the skin depth of a RF current configured to flow therethrough during plasma processing.

Abstract translation: 用于处理半导体部件的半导体等离子体处理装置包括等离子体处理室，与等离子体处理室流体连通的处理气体源，用于将处理气体供应到等离子体处理室中; RF能量源，其适于将工艺气体激励成 等离子体处理室中的等离子体状态，以及用于从等离子体处理室排出处理气体的真空端口。 半导体等离子体处理装置还包括至少一种组分，其中组分具有约70,000或更大的相对磁导率的本体和在体表面上的冷喷涂的导电和非磁性涂层，其中涂层具有更大的厚度 比在等离子体处理期间配置为流过其中的RF电流的趋肤深度。

公开(公告)号：US20240404804A1

公开(公告)日：2024-12-05

申请号：US18689017

申请日：2022-09-13

Applicant: Lam Research Corporation

Inventor： Alexander Miller Paterson ,  Daniel Guzman ,  William T. Hart ,  Cristian Siladie ,  Michael John Martin ,  Yuhou Wang ,  Michael Drymon ,  John Drewery ,  Robert Griffith O'Neill ,  Luc Albarede ,  Neil Simon Ocampo

IPC: H01J37/32 ,  H01J37/34

Abstract: A radiofrequency calibration system for a direct-drive radiofrequency power supply includes a reference box that includes a reference circuit for converting a non-reference input impedance to a reference output impedance. The reference box has an input connector electrically connected to a radiofrequency output coupling of the direct-drive radiofrequency power supply. A radiofrequency power meter has a radiofrequency power input electrically connected to an output connector of the reference box. The radiofrequency power meter has an input impedance and an output impedance that substantially match the reference output impedance of the reference box. A cable has a first end electrically connected to a radiofrequency power output of the radiofrequency power meter and a second end connected to a test load that has an impedance that substantially matches the reference output impedance of the reference box. A controller is connected in data communication with a data interface of the radiofrequency power meter.

公开(公告)号：US20150184296A1

公开(公告)日：2015-07-02

申请号：US14572087

申请日：2014-12-16

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Hong Shih ,  Nash Anderson ,  Tom Stevenson ,  John Daugherty ,  John Michael Kerns ,  Robert Griffith O'Neill

IPC: C23C16/455 ,  C23C16/46 ,  H01L21/67 ,  C23C16/52

CPC classification number: C23C14/564 ,  C23C16/045 ,  C23C16/4402 ,  C23C16/4404 ,  C23C16/45525 ,  Y10T29/41 ,  Y10T428/263 ,  Y10T428/31504 ,  Y10T428/31551 ,  Y10T428/31678 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31786

Abstract: A coating system for forming an atomic layer deposition (ALD) or a molecular layer deposition (MLD) barrier coating on interior fluid wetted surfaces of a fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus. The coating system includes the fluid handling component, wherein the interior fluid wetted surfaces define a process region of the coating system, a gas supply system in fluid communication with the process region of the component wherein the gas supply system supplies process gases to the process region of the component through the inlet port thereof such that an ALD or MLD barrier coating can be formed on the fluid wetted surfaces of the fluid handling component, and an exhaust system in fluid communication with the process region of the component wherein the exhaust system exhausts the process gases from the process region of the component through the outlet port thereof.

Abstract translation: 一种用于在半导体衬底处理设备的真空室的流体处理部件的内部流体润湿表面上形成原子层沉积（ALD）或分子层沉积（MLD）阻挡涂层的涂层系统。 涂层系统包括流体处理部件，其中内部流体润湿表面限定涂层系统的工艺区域，与部件的工艺区域流体连通的气体供应系统，其中气体供应系统将工艺气体提供给过程区域 的组件通过其入口使得可以在流体处理组件的流体润湿表面上形成ALD或MLD阻挡涂层，以及与组件的处理区域流体连通的排气系统，其中排气系统排出 从组件的工艺区域通过其出口处理气体。

公开(公告)号：US10658222B2

公开(公告)日：2020-05-19

申请号：US14705430

申请日：2015-05-06

Applicant: Lam Research Corporation

Inventor： Haoquan Yan ,  Robert Griffith O'Neill ,  Raphael Casaes ,  Jon McChesney ,  Alex Paterson

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32 ,  H01J37/02 ,  H01J37/20

Abstract: A substrate processing system includes a processing chamber and a pedestal arranged in the processing chamber. An edge coupling ring is arranged adjacent to a radially outer edge of the pedestal. A first actuator is configured to selectively move the edge coupling ring to a raised position, relative to the pedestal to provide clearance between the edge coupling ring and the pedestal to allow a robot arm to remove the edge coupling ring from the processing chamber.

公开(公告)号：US20160211166A1

公开(公告)日：2016-07-21

申请号：US14705430

申请日：2015-05-06

Applicant: Lam Research Corporation

Inventor： Haoquan Yan ,  Robert Griffith O'Neill ,  Raphael Casaes ,  Jon McChesney ,  Alex Paterson

IPC: H01L21/687 ,  H01L21/66 ,  H01L21/67

CPC classification number: H01L21/68742 ,  H01J37/023 ,  H01J37/20 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/67069 ,  H01L21/68735

Abstract: A substrate processing system includes a processing chamber and a pedestal arranged in the processing chamber. An edge coupling ring is arranged adjacent to a radially outer edge of the pedestal. A first actuator is configured to selectively move the edge coupling ring to a raised position, relative to the pedestal to provide clearance between the edge coupling ring and the pedestal to allow a robot arm to remove the edge coupling ring from the processing chamber.

Abstract translation: 基板处理系统包括处理室和布置在处理室中的基座。 边缘联接环布置成邻近基座的径向外边缘。 第一致动器构造成相对于基座选择性地将边缘联接环移动到升高位置，以在边缘联接环和基座之间提供间隙，以允许机器人臂从处理室移除边缘联接环。

公开(公告)号：US20150219499A1

公开(公告)日：2015-08-06

申请号：US14173149

申请日：2014-02-05

Applicant: Lam Research Corporation

Inventor： Ole Waldmann ,  Eric A. Pape ,  Robert Griffith O'Neill ,  Francisco Martinez

IPC: G01J5/02 ,  H01L21/66 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065 ,  G01N35/00

CPC classification number: G01J5/02 ,  G01J5/0007 ,  G01J5/025 ,  G01J5/10 ,  G01J2005/0048 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831

Abstract: A method for calculating power input to at least one thermal control element of an electrostatic chuck includes: setting the at least one thermal control element to a first predetermined power level; measuring a first temperature of the at least one thermal control element when the at least one thermal control element is powered at the first predetermined power level; setting the at least one thermal control element to a second predetermined power level; measuring a second temperature of the at least one thermal control element when the at least one thermal control element is powered at the second predetermined power level; calculating a difference between the first temperature and the second temperature; calculating a system response of the at least one thermal control element based on the difference; inverting the system response; and calibrating the at least one thermal control element based on the inverted system response.

Abstract translation: 一种用于计算静电卡盘的至少一个热控元件的功率输入的方法，包括：将所述至少一个热控制元件设置为第一预定功率水平; 当所述至少一个热控元件以所述第一预定功率水平供电时，测量所述至少一个热控元件的第一温度; 将所述至少一个热控制元件设置到第二预定功率水平; 当所述至少一个热控元件以所述第二预定功率电平供电时，测量所述至少一个热控元件的第二温度; 计算第一温度和第二温度之间的差; 基于所述差异来计算所述至少一个热控制元件的系统响应; 反转系统响应; 以及基于所述反向系统响应来校准所述至少一个热控制元件。

公开(公告)号：US12027410B2

公开(公告)日：2024-07-02

申请号：US17181571

申请日：2021-02-22

Applicant: LAM RESEARCH CORPORATION

Inventor： Haoquan Yan ,  Robert Griffith O'Neill ,  Raphael Casaes ,  Jon Mcchesney ,  Alex Paterson

IPC: H01L21/687 ,  H01J37/02 ,  H01J37/20 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/68742 ,  H01J37/023 ,  H01J37/20 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/67069 ,  H01L21/68735

Abstract: An edge ring arrangement for a processing chamber includes a first ring configured to surround and overlap a radially outer edge of an upper plate of a pedestal arranged in the processing chamber, a second ring arranged below the first moveable ring, wherein a portion of the first ring overlaps the second ring, a first actuator configured to actuate a first pillar to selectively move the first ring to a raised position and a lowered position relative to the pedestal, and a second actuator configured to actuate a second pillar to selectively move the second ring to a raised position and a lowered position relative to the pedestal.

公开(公告)号：US09873940B2

公开(公告)日：2018-01-23

申请号：US14572087

申请日：2014-12-16

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Hong Shih ,  Nash Anderson ,  Tom Stevenson ,  John Daugherty ,  John Michael Kerns ,  Robert Griffith O'Neill

IPC: C23C16/455 ,  C23C14/56 ,  C23C16/04 ,  C23C16/44

CPC classification number: C23C14/564 ,  C23C16/045 ,  C23C16/4402 ,  C23C16/4404 ,  C23C16/45525 ,  Y10T29/41 ,  Y10T428/263 ,  Y10T428/31504 ,  Y10T428/31551 ,  Y10T428/31678 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31786

Abstract: A coating system for forming an atomic layer deposition (ALD) or a molecular layer deposition (MLD) barrier coating on interior fluid wetted surfaces of a fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus. The coating system includes the fluid handling component, wherein the interior fluid wetted surfaces define a process region of the coating system, a gas supply system in fluid communication with the process region of the component wherein the gas supply system supplies process gases to the process region of the component through the inlet port thereof such that an ALD or MLD barrier coating can be formed on the fluid wetted surfaces of the fluid handling component, and an exhaust system in fluid communication with the process region of the component wherein the exhaust system exhausts the process gases from the process region of the component through the outlet port thereof.

公开(公告)号：US09435692B2

公开(公告)日：2016-09-06

申请号：US14173149

申请日：2014-02-05

Applicant: Lam Research Corporation

Inventor： Ole Waldmann ,  Eric A. Pape ,  Robert Griffith O'Neill ,  Francisco Martinez

IPC: G01K15/00 ,  G01J5/02 ,  H01L21/67 ,  H01L21/683

CPC classification number: G01J5/02 ,  G01J5/0007 ,  G01J5/025 ,  G01J5/10 ,  G01J2005/0048 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831

Abstract: A method for calculating power input to at least one thermal control element of an electrostatic chuck includes: setting the at least one thermal control element to a first predetermined power level; measuring a first temperature of the at least one thermal control element when the at least one thermal control element is powered at the first predetermined power level; setting the at least one thermal control element to a second predetermined power level; measuring a second temperature of the at least one thermal control element when the at least one thermal control element is powered at the second predetermined power level; calculating a difference between the first temperature and the second temperature; calculating a system response of the at least one thermal control element based on the difference; inverting the system response; and calibrating the at least one thermal control element based on the inverted system response.

Abstract translation: 一种用于计算静电卡盘的至少一个热控元件的功率输入的方法，包括：将所述至少一个热控制元件设置为第一预定功率水平; 当所述至少一个热控元件以所述第一预定功率水平供电时，测量所述至少一个热控元件的第一温度; 将所述至少一个热控制元件设置到第二预定功率水平; 当所述至少一个热控元件以所述第二预定功率电平供电时，测量所述至少一个热控元件的第二温度; 计算第一温度和第二温度之间的差; 基于所述差异来计算所述至少一个热控制元件的系统响应; 反转系统响应; 以及基于所述反向系统响应来校准所述至少一个热控制元件。