公开(公告)号：US09673353B2

公开(公告)日：2017-06-06

申请号：US14694602

申请日：2015-04-23

Applicant: Lextar Electronics Corporation

Inventor： Jun-Rong Chen ,  Hsiu-Mei Chou ,  Jhao-Cheng Ye

IPC: H01L33/20 ,  H01L33/02 ,  H01L33/00 ,  H01L33/12 ,  H01L21/02 ,  C30B23/04 ,  C30B25/04 ,  C30B29/40

CPC classification number: H01L21/02513 ,  C30B23/04 ,  C30B25/04 ,  C30B25/20 ,  C30B29/406 ,  C30B29/66 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the surface and the first epitaxial layer.

公开(公告)号：US09601661B2

公开(公告)日：2017-03-21

申请号：US14694617

申请日：2015-04-23

Applicant: Lextar Electronics Corporation

Inventor： Jun-Rong Chen ,  Hsiu-Mei Chou ,  Jhao-Cheng Ye

IPC: H01L33/20 ,  H01L33/02 ,  H01L33/00 ,  H01L33/12 ,  H01L21/02 ,  C30B23/04 ,  C30B25/04 ,  C30B29/40

CPC classification number: H01L21/02513 ,  C30B23/04 ,  C30B25/04 ,  C30B25/20 ,  C30B29/406 ,  C30B29/66 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the surface and the first epitaxial layer.

公开(公告)号：US09892911B2

公开(公告)日：2018-02-13

申请号：US15428416

申请日：2017-02-09

Applicant: Lextar Electronics Corporation

Inventor： Jun-Rong Chen ,  Hsiu-Mei Chou ,  Jhao-Cheng Ye

IPC: H01L21/02 ,  H01L33/00 ,  H01L33/20 ,  H01L33/32 ,  H01L33/12 ,  C30B25/20 ,  C30B29/40 ,  C30B29/68 ,  C30B29/66

CPC classification number: H01L21/02513 ,  C30B23/04 ,  C30B25/04 ,  C30B25/20 ,  C30B29/406 ,  C30B29/66 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the first epitaxial layer.

公开(公告)号：US09041159B2

公开(公告)日：2015-05-26

申请号：US13932665

申请日：2013-07-01

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Jun-Rong Chen ,  Hsiu-Mei Chou ,  Jhao-Cheng Ye

IPC: H01L29/06 ,  H01L33/02 ,  H01L33/00 ,  H01L33/12 ,  H01L21/02 ,  C30B23/04 ,  C30B25/04 ,  C30B29/40

CPC classification number: H01L21/02513 ,  C30B23/04 ,  C30B25/04 ,  C30B25/20 ,  C30B29/406 ,  C30B29/66 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: An epitaxial growth method includes the steps of: providing a substrate; forming a sacrifice layer on the substrate; patterning the sacrifice layer to form a plurality of bumps spaced apart from each other on the substrate; epitaxially forming a first epitaxial layer on the substrate to cover a portion of each of the bumps; removing the bumps to form a plurality of cavities; and epitaxially forming a second epitaxial layer on the first epitaxial layer such that the cavities are enclosed by the first epitaxial layer and the second epitaxial layer. An epitaxial structure grown by the method is disclosed as well.

Abstract translation: 外延生长方法包括以下步骤：提供衬底; 在基板上形成牺牲层; 图案化牺牲层以在基板上形成彼此间隔开的多个凸起; 在衬底上外延地形成第一外延层以覆盖每个凸块的一部分; 去除凸起以形成多个空腔; 并且在所述第一外延层上外延地形成第二外延层，使得所述空腔被所述第一外延层和所述第二外延层包围。 还公开了通过该方法生长的外延结构。

公开(公告)号：US08729588B2

公开(公告)日：2014-05-20

申请号：US13658813

申请日：2012-10-23

Applicant: Lextar Electronics Corporation

Inventor： Jun-Rong Chen ,  Jhao-Cheng Ye

IPC: H01L33/58

CPC classification number: H01L33/22 ,  H01L33/10 ,  H01L2933/0091

Abstract: The present invention provides a light emitting diode (LED) element which comprises a substrate, a buffer layer, a plurality of nano-spheres and a light emitting structure. The substrate comprises a plurality of grooves arranged at intervals on a surface of the substrate. The buffer layer is disposed on the surface of the substrate where the grooves being formed, wherein the grooves are disposed between the substrate and the buffer layer. The nano-spheres are received in the grooves, so each groove is provided with at least a nano-sphere. The light emitting structure is disposed on the buffer layer.

Abstract translation: 本发明提供一种发光二极管（LED）元件，其包括衬底，缓冲层，多个纳米球体和发光结构。 衬底包括在衬底的表面上间隔布置的多个沟槽。 缓冲层设置在形成有凹槽的基板的表面上，其中凹槽设置在基板和缓冲层之间。 纳米球被容纳在槽中，因此每个凹槽设置有至少一个纳米球体。 发光结构设置在缓冲层上。

公开(公告)号：US20140008766A1

公开(公告)日：2014-01-09

申请号：US13932665

申请日：2013-07-01

Applicant: Lextar Electronics Corporation

Inventor： Jun-Rong Chen ,  Hsiu-Mei Chou ,  Jhao-Cheng Ye

IPC: H01L33/02

CPC classification number: H01L21/02513 ,  C30B23/04 ,  C30B25/04 ,  C30B25/20 ,  C30B29/406 ,  C30B29/66 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

Abstract: An epitaxial growth method includes the steps of: providing a substrate; forming a sacrifice layer on the substrate; patterning the sacrifice layer to form a plurality of bumps spaced apart from each other on the substrate; epitaxially forming a first epitaxial layer on the substrate to cover a portion of each of the bumps; removing the bumps to form a plurality of cavities; and epitaxially forming a second epitaxial layer on the first epitaxial layer such that the cavities are enclosed by the first epitaxial layer and the second epitaxial layer. An epitaxial structure grown by the method is disclosed as well.

Abstract translation: 外延生长方法包括以下步骤：提供衬底; 在基板上形成牺牲层; 图案化牺牲层以在基板上形成彼此间隔开的多个凸起; 在衬底上外延地形成第一外延层以覆盖每个凸块的一部分; 去除凸起以形成多个空腔; 并且在所述第一外延层上外延地形成第二外延层，使得所述空腔被所述第一外延层和所述第二外延层包围。 还公开了通过该方法生长的外延结构。