Abstract:
A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
Abstract:
A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener diode, and a lens on the sub-mount.
Abstract:
A light emitting device package including light emitting devices, and optical lenses respectively disposed over the light emitting devices. Further, a respective optical lens includes an extending member extending from a body of the respective optical lens, and including a first portion laterally extending in a first direction substantially perpendicular to the central axis of the respective light emitting device, and a second portion extending towards the substrate in a second direction substantially parallel with the central axis of the respective light emitting device. A vertical cross section of the second portion is substantially symmetrical with respect to an axis that is spaced apart in the first direction from and substantially parallel with the central axis of the respective light emitting device.
Abstract:
A light emitting device package including light emitting devices, and optical lenses respectively disposed over the light emitting devices. Further, a respective optical lens includes an extending member extending from a body of the respective optical lens, and including a first portion laterally extending in a first direction substantially perpendicular to the central axis of the respective light emitting device, and a second portion extending towards the substrate in a second direction substantially parallel with the central axis of the respective light emitting device. A vertical cross section of the second portion is substantially symmetrical with respect to an axis that is spaced apart in the first direction from and substantially parallel with the central axis of the respective light emitting device.
Abstract:
A light emitting device including a support layer; a reflective electrode disposed on the support layer; an ohmic electrode disposed on the reflective electrode, the ohmic electrode including a transparent electrode; and a semiconductor structure disposed on the ohmic electrode, the semiconductor structure including a p-type semiconductor layer disposed on the ohmic electrode; a light emitting layer disposed on the p-type semiconductor layer; and an n-type semiconductor layer disposed on the light emitting layer. Further, the transparent electrode has a thickness in the range of 40 nm to 90 nm.
Abstract:
A light emitting device package can include a sub-mount having a first surface, a second surface, a bottom surface and a cavity; a first layer on the first surface; a second layer on the second surface; a third layer on the bottom surface; a light emitting device on the first layer and including a supporting layer including an anti-diffusion layer, a first electrode on the supporting layer, a semiconductor light emitting structure electrically connected to the first electrode, and a second electrode electrically connected to the semiconductor light emitting structure, in which the first and second electrodes electrically connect to the first layer and the second layer, respectively, and the semiconductor light emitting structure includes a light extraction structure; an ESD property improving diode on the second surface, electrically connected to the second layer and arranged a distance apart from the light emitting device, and a lens on the sub-mount.
Abstract:
A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener diode, and a lens on the sub-mount.
Abstract:
A light emitting device package including light emitting devices, and optical lenses respectively disposed over the light emitting devices. Further, a respective optical lens includes an extending member extending from a body of the respective optical lens, and including a first portion laterally extending in a first direction substantially perpendicular to the central axis of the respective light emitting device, and a second portion extending towards the substrate in a second direction substantially parallel with the central axis of the respective light emitting device. A vertical cross section of the second portion is substantially symmetrical with respect to an axis that is spaced apart in the first direction from and substantially parallel with the central axis of the respective light emitting device.
Abstract:
An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
Abstract:
A light emitting device having a vertical structure and a package thereof, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity. The device and package include a sub-mount, a first-type electrode, a second-type electrode, a light emitting device, a zener diode, and a lens on the sub-mount.